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    TRANSISTOR LD Search Results

    TRANSISTOR LD Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR LD Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network LDTA124EET1 This new digital transistor is designed to replace a single device and its external resistor bias network. The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network


    Original     		PDF LDTA124EET1 SC-89

    marking P33 transistor

    Abstract: marking P32 transistor transistor P32 25 marking P34 DTA12 DTA124E LDTA124EET1 SC-89 100 p34 transistor
    Text: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network LDTA124EET1 This new digital transistor is designed to replace a single device and its external resistor bias network. The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network


    Original     		PDF LDTA124EET1 SC-89 463C-01 463C-02. marking P33 transistor marking P32 transistor transistor P32 25 marking P34 DTA12 DTA124E LDTA124EET1 SC-89 100 p34 transistor

    MN1280

    Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
    Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: NXP UHF power LDMOS transistor BLF884P S 350 W LDMOS RF power transistor for digital & analog transmitters High efficiency and excellent ruggedness make this 350 W LDMOS power transistor an ideal component for UHF broadcast transmitters and industrial applications.


    Original     		PDF BLF884P OT1121A OT1121B-sized BLF884P

    Untitled

    Abstract: No abstract text available
    Text: BLP15M7160P Power LDMOS transistor Rev. 2 — 10 June 2014 Product data sheet 1. Product profile 1.1 General description A 160W LDMOS RF power transistor for broadcast transmitter and industrial applications. The transistor is suitable for the frequency range HF to 1500 MHz. The


    Original     		PDF BLP15M7160P

    Untitled

    Abstract: No abstract text available
    Text: BLP15M7160P Power LDMOS transistor Rev. 1 — 10 January 2014 Objective data sheet 1. Product profile 1.1 General description A 160W LDMOS RF power transistor for broadcast transmitter and industrial applications. The transistor is suitable for the frequency range HF to 1500 MHz. The


    Original     		PDF BLP15M7160P

    BLF888

    Abstract: dvb-t2 j3076 Technical Specifications of DVB-T2 Transmitter EZ90-25 ttf 103 C4532X7R1E475MT020U RF35 sot979 EZ90-25-TP
    Text: BLF888 UHF power LDMOS transistor Rev. 04 — 29 April 2010 Product data sheet 1. Product profile 1.1 General description A 500 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor is optimized for digital applications and can deliver 110 W


    Original     		PDF BLF888 BLF888 dvb-t2 j3076 Technical Specifications of DVB-T2 Transmitter EZ90-25 ttf 103 C4532X7R1E475MT020U RF35 sot979 EZ90-25-TP

    Untitled

    Abstract: No abstract text available
    Text: BLF888 UHF power LDMOS transistor Rev. 03 — 11 February 2010 Product data sheet 1. Product profile 1.1 General description A 500 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor is optimized for digital applications and can deliver 110 W


    Original     		PDF BLF888 BLF888

    J0266

    Abstract: J-0834 J1930 001aaj288
    Text: BLF871 UHF power LDMOS transistor Rev. 01 — 18 December 2008 Objective data sheet 1. Product profile 1.1 General description A 100 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 100 W broadband from HF to 1 GHz. The


    Original     		PDF BLF871 BLF871 J0266 J-0834 J1930 001aaj288

    blf878

    Abstract: ez90 j4213 Bv 42 transistor J0314 Reference blf878
    Text: BLF878 UHF power LDMOS transistor Rev. 02 — 15 June 2009 Product data sheet 1. Product profile 1.1 General description A 300 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 300 W broadband over the full UHF band from


    Original     		PDF BLF878 BLF878 ez90 j4213 Bv 42 transistor J0314 Reference blf878

    Untitled

    Abstract: No abstract text available
    Text: BLF642 Broadband power LDMOS transistor Rev. 2 — 22 July 2011 Product data sheet 1. Product profile 1.1 General description A 35 W LDMOS RF power transistor for broadcast transmitter and industrial applications. The transistor is suitable for the frequency range HF to 1400 MHz. The excellent


    Original     		PDF BLF642

    BLF871

    Abstract: DVB-T transistor amplifier rogers 5880 uhf amplifier design Transistor TRANSISTOR GENERAL DIGITAL L6 of transistor C 4212 900 mhz av transmitter D2140
    Text: BLF871 UHF power LDMOS transistor Rev. 03 — 21 September 2009 Product data sheet 1. Product profile 1.1 General description A 100 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 100 W broadband from HF to 1 GHz. The


    Original     		PDF BLF871 BLF871 DVB-T transistor amplifier rogers 5880 uhf amplifier design Transistor TRANSISTOR GENERAL DIGITAL L6 of transistor C 4212 900 mhz av transmitter D2140

    J2735

    Abstract: DVB-t2 ATC800B JESD625-A 61 TRANSISTOR DVBT2 transistor smd 723 GP414
    Text: BLF6G15L-500H; BLF6G15LS-500H Power LDMOS transistor Rev. 1 — 11 May 2011 Objective data sheet 1. Product profile 1.1 General description A 500 W LDMOS RF power transistor for transmitter applications and industrial applications. The transistor is optimized for digital applications and can deliver 65 W


    Original     		PDF BLF6G15L-500H; BLF6G15LS-500H BLF6G15L-500H 6G15LS-500H J2735 DVB-t2 ATC800B JESD625-A 61 TRANSISTOR DVBT2 transistor smd 723 GP414

    Untitled

    Abstract: No abstract text available
    Text: BLF644P Broadband power LDMOS transistor Rev. 2 — 27 June 2014 Product data sheet 1. Product profile 1.1 General description A 70 W LDMOS RF power transistor for broadcast transmitter, communications and industrial applications. The transistor is suitable for the frequency range HF to 1300 MHz.


    Original     		PDF BLF644P

    BLF871

    Abstract: J1930
    Text: BLF871 UHF power LDMOS transistor Rev. 02 — 5 March 2009 Preliminary data sheet 1. Product profile 1.1 General description A 100 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 100 W broadband from HF to 1 GHz. The


    Original     		PDF BLF871 BLF871 J1930

    Untitled

    Abstract: No abstract text available
    Text: BLF647PS Broadband power LDMOS transistor Rev. 2 — 18 November 2013 Product data sheet 1. Product profile 1.1 General description A 200 W LDMOS RF power transistor for broadcast transmitter and industrial applications. The transistor is suitable for the frequency range HF to 1500 MHz. The


    Original     		PDF BLF647PS

    Untitled

    Abstract: No abstract text available
    Text: BLF6G15L-500H; BLF6G15LS-500H Power LDMOS transistor Rev. 3 — 12 July 2013 Product data sheet 1. Product profile 1.1 General description A 500 W LDMOS RF power transistor for transmitter applications and industrial applications. The transistor is optimized for digital applications and can deliver 65 W


    Original     		PDF BLF6G15L-500H; BLF6G15LS-500H BLF6G15L-500H 6G15LS-500H

    Untitled

    Abstract: No abstract text available
    Text: BLF888 UHF power LDMOS transistor Rev. 5 — 21 January 2011 Product data sheet 1. Product profile 1.1 General description A 500 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor is optimized for digital applications and can deliver 110 W


    Original     		PDF BLF888

    C570X7R1H106KT000N

    Abstract: 771-BLF642112 SOT467 Technical Specifications of DVB-T2 Transmitter DVB-T2 blf642,112 blf642 C570x
    Text: BLF642 Broadband power LDMOS transistor Rev. 2 — 22 July 2011 Product data sheet 1. Product profile 1.1 General description A 35 W LDMOS RF power transistor for broadcast transmitter and industrial applications. The transistor is suitable for the frequency range HF to 1400 MHz. The excellent


    Original     		PDF BLF642 771-BLF642112 BLF642 C570X7R1H106KT000N SOT467 Technical Specifications of DVB-T2 Transmitter DVB-T2 blf642,112 C570x

    BLF647P

    Abstract: 130005 power transistor
    Text: BLF647P; BLF647PS Broadband power LDMOS transistor Rev. 1 — 3 August 2012 Objective data sheet 1. Product profile 1.1 General description A 200 W LDMOS RF power transistor for broadcast transmitter and industrial applications. The transistor is suitable for the frequency range HF to 1500 MHz. The


    Original     		PDF BLF647P; BLF647PS BLF647P 130005 power transistor

    blf642

    Abstract: rogers 5880
    Text: BLF642 Broadband power LDMOS transistor Rev. 2 — 22 July 2011 Product data sheet 1. Product profile 1.1 General description A 35 W LDMOS RF power transistor for broadcast transmitter and industrial applications. The transistor is suitable for the frequency range HF to 1400 MHz. The excellent


    Original     		PDF BLF642 blf642 rogers 5880

    Untitled

    Abstract: No abstract text available
    Text: SGS-THOMSON RfflD0lsi i[Liera®[i!lDS$ BD179 NPN SILICON TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . NPN TRANSISTOR APPLICATION . GENERAL PURPOSE SWITCHING DESCRIPTION The BD179 is a silicon epitaxial planar NPN transistor in Jedec SOT-32 plastic package,


    OCR Scan     		PDF BD179 BD179 OT-32 OT-32 O-126)

    yn 1018

    Abstract: MPF820 RS-50S Scans-00100834
    Text: MPF820 silicon Advance Inform ation JUNCTION FIELD-EFFECT TRANSISTOR SILICON N-CHANNEL JUNCTION FIELD-EIFFECT TRANSISTOR SILIC O N N -CHANNEL . . . depletion mode jun ctio n fie ld -e ffect transistor designed fo r low noise grounded gate RF a m plifier applications.


    OCR Scan     		PDF MPF820 RS-50S! 330pF yn 1018 MPF820 RS-50S Scans-00100834

    Untitled

    Abstract: No abstract text available
    Text: SGS-THOMSON RfflD0lsi i[Liera®[i!lDS$ 2N5195 MEDIUM POWER PNP SILICON TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . PNP TRANSISTOR APPLICATIONS . LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION The 2N5195 is a silicon epitaxial-base PNP transistor in Jedec SOT-32 plastic package.


    OCR Scan     		PDF 2N5195 2N5195 OT-32 2N5192. OT-32 O-126)