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    TRANSISTOR K 316 Search Results

    TRANSISTOR K 316 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR K 316 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: BSP 316 SIPMOS Small-Signal Transistor • P channel • Enhancement mode • Logic Level • VGS th = -0.8.-2.0 V Pin 1 G Pin 2 Pin 3 D Type VDS ID RDS(on) Package Marking BSP 316 -100 V -0.65 A 2.2 Ω SOT-223 BSP 316 Type BSP 316 Ordering Code Q67000-S92


    Original     		PDF OT-223 Q67000-S92 E6327

    transistor k 316

    Abstract: E6327 Q67000-S92
    Text: BSP 316 SIPMOS Small-Signal Transistor • P channel • Enhancement mode • Logic Level • VGS th = -0.8.-2.0 V Pin 1 G Pin 2 D Pin 3 Pin 4 S Type VDS ID RDS(on) Package Marking BSP 316 -100 V -0.65 A 2.2 Ω SOT-223 BSP 316 Type BSP 316 Ordering Code


    Original     		PDF OT-223 Q67000-S92 E6327 Sep-12-1996 transistor k 316 E6327 Q67000-S92

    E6327

    Abstract: Q67000-S92
    Text: BSP 316 SIPMOS Small-Signal Transistor • P channel • Enhancement mode • Logic Level • VGS th = -0.8.-2.0 V Pin 1 G Pin 2 Pin 3 D Type VDS ID RDS(on) Package Marking BSP 316 -100 V -0.65 A 2.2 Ω SOT-223 BSP 316 Type BSP 316 Ordering Code Q67000-S92


    Original     		PDF OT-223 Q67000-S92 E6327 E6327 Q67000-S92

    Untitled

    Abstract: No abstract text available
    Text: Multi-Loop PID Temperature/Process Controllers CN3390 Series MADE IN USA ACCEPTS 10 INPUTS! 2 # # 4 # 3 6 8 10 # # # # 1 # 5 # 7 # 9 OMEGA SM CARE Extended Warranty Program Probes sold separately. KQSS-316G-12, $25 each See Section A CN3390 Series ߜ 10 PID Control Loops with Auto-Tuning


    Original     		PDF CN3390 KQSS-316G-12, P-129 RS-232, RS-422 RS-485 CN3390-INTALM) RS-422,

    transistor 335

    Abstract: transistor IR TRANSISTOR ir receiver transistor 330 transistor NJL5171K INFRARED REMOTE CONTROL njl51
    Text: OPTOELECTRONICS SEMICONDUCTOR ELEMENTS D [Photo R eflector] — Super Mini Type Transistor Output- [— N JL516 1 K /6 3 K /6 5 K /6 7 K . 2-10 NJ L 5 1 9 1 K /9 3 K /9 5 K . 2-63 Super Mini Type Transistor Output_


    OCR Scan     		PDF -NJL5161K/63K/65K/67Kâ NJL5I9IK/93K/95K-â NJL5I65K-H2. -NJL5I62K/64K/66K/68K- NJL5171K. NJL5I72K. NJL5181K/83Kâ NJL5196K/97K NJL5175K/77K NJL5I98K/99Kâ transistor 335 transistor IR TRANSISTOR ir receiver transistor 330 transistor NJL5171K INFRARED REMOTE CONTROL njl51

    transistor NEC D 822 P

    Abstract: transistor number D 2498 702 mini transistor 2SC4226-T1 NEC D 822 P 2sc4226 2SC4226-T2
    Text: DATA SHEET SILICON TRANSISTOR 2SC4226 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD D E S C R IP T IO N The 2SC4226 is a low supply voltage transistor designed for VHF, UHF low PA C K A G E D IM E N S IO N S in millimeters


    OCR Scan     		PDF 2SC4226 2SC4226 SC-70 2SC4226-T1 2SC4226-T2 transistor NEC D 822 P transistor number D 2498 702 mini transistor NEC D 822 P

    FZH 161

    Abstract: FZH 111 FZH 181 transistor I 17-13 0773 CBC 184 transistor FZH 175 S3230 FZH 165 FZH 165 b fzh 171
    Text: What HEWLETT wHHM P A C K A R D 4.8 V NPN Common Em itter Medium Power Output Transistor Technical Data AT-31625 Features • 4.8 Volt Operation • +28.0 dBm Pout @ 900 MHz, Typ. MSOP-3 Surface Mount Plastic Package Outline 25 • 70% C ollector Efficiency


    OCR Scan     		PDF AT-31625 OT-223 AT-31625 5965-5911E FZH 161 FZH 111 FZH 181 transistor I 17-13 0773 CBC 184 transistor FZH 175 S3230 FZH 165 FZH 165 b fzh 171

    2SK1642

    Abstract: QD23 til320 DC DC converter 1A 400V TO 220 Package
    Text: TOSHIBA ‘i O ' ^ S G TOSHIBA FIELD EFFECT TRANSISTOR 002332^ 2SK1642 4^0 SILICON N CHANNEL MOS TYPE tt-M O SII 2 S K 1 642 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS. INDUSTRIAL APPLICATIONS U nit in mm


    OCR Scan     		PDF 2SK1642 20kfi) O-220FL O-220SM Q023b44 2SK1642 QD23 til320 DC DC converter 1A 400V TO 220 Package

    2N6111

    Abstract: 2N6288
    Text: 2N6288 NPN PLASTIC POWER TRANSISTOR Complementary 2N6111 General Purpose Amplifier and Switching Applications DIM A B C E F G H J K L M N MIN 14.42 9,63 3.56 MAX 16.51 10.67 4.83 0.90 1.15 1,40 3.75 3.88 2.29 2.79 2,54 3.43 0,56 12.70 14,73 6,35 2.03 2,92


    OCR Scan     		PDF 2N6288 2N6288 2N6111 2N6111

    MP1620

    Abstract: transistors MP1620 Mp1620 equivalent mp1620 transistor transistor mp1620 sanken power transistor mp1620 sanken power transistor IC MP1620 1F 10pin sanken lot number
    Text: nnKpn M nàtfcJÜ # £ s a n k e n e l e c t r ic c o m p a n y , l t d . SPE C IFIC A TIO N S DEVICE TYPE NAME m m i M P I620 SANKEN MOLD TYPE SILICON POWER TRANSISTOR MPI 620 l. m m m m Scope C \7 {2> JSTOiilLSS S' y a M P1620 Ko 50 The present specifications shall apply to Sanken silicon power transistor type MP1620.


    OCR Scan     		PDF MP1620 MP1620 MP1620. SSE-21 SSE-21316 transistors MP1620 Mp1620 equivalent mp1620 transistor transistor mp1620 sanken power transistor mp1620 sanken power transistor IC MP1620 1F 10pin sanken lot number

    Untitled

    Abstract: No abstract text available
    Text: KSR1002 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION B ias R e s is to r B u ilt In • Switching circuit, Inverter, Interface circuit Driver circuit • Built in bias R e sisto r(R ^IO K ft, R2=10K ii) • Complement to KSR2002 ABSOLUTE MAXIMUM RATINGS (Ta= 25°C)


    OCR Scan     		PDF KSR1002 KSR2002

    4311 mosfet transistor

    Abstract: 2SK2068 2sc 1027 transistor 4-071 transistor 2SK2067 S2VC 4102 transistor s2ld s4vb bridge rectifier 4072
    Text: O rd erin g and P a c k in g In fo rm a tio n Explanation of Packing Lists 1. Parts No. Example: 1 Tape & Reel Surface Mount Devices D 1N□ Maximum Reverse Voltage Example: 2 2. 3. 2SC3164 Transistor or MOSFET ^ Besides SC, there are SA, SB, SD and SK devices.


    OCR Scan     		PDF 2SC3164 VR61F1 MA1000 MA2000 4311 mosfet transistor 2SK2068 2sc 1027 transistor 4-071 transistor 2SK2067 S2VC 4102 transistor s2ld s4vb bridge rectifier 4072

    MGF4316F

    Abstract: MGF4319F MGF4310 MGF4319 251C M5M27C102P
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F4310F Series S U P E R LOW NOISE InGaAs HEMT D ESC R IP T IO N O U TLIN E DRAWING The MGF4310F series super-low-noise HEMT High Electron Mobility Transistor is designed for use in X to K band amplifiers. The hermetically sealed metal-ceramic


    OCR Scan     		PDF MGF4310F 12GHz MGF4319F: MGF4316F: M5M27C102P RV-15 1048576-BIT 65536-W0RD MGF4316F MGF4319F MGF4310 MGF4319 251C

    Untitled

    Abstract: No abstract text available
    Text: 2N6288 NPN PLASTIC POWER TRANSISTOR Complementary 2N6111 General Purpose Amplifier and Switching Applications DIM A B W C D E Uj F G H J K L ° - lo i. Ml u M N MIN 14.42 9,63 3,56 MAX 16.51 10.67 4.83 0.90 1,15 1.40 3,75 3,88 2.29 2.79 2,54 3.43 _ 0,56 12,70 14,73


    OCR Scan     		PDF 2N6288 2N6111

    Untitled

    Abstract: No abstract text available
    Text: 1 7c1gcia37 0045Û14 Sbfl •SGTH _ *57 S C S -T H O M S O N IL C K g ra *! S T E 4 5 N 50 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN ISOTOP PACKAGE TYPE S TE45N 50 V dss 500 V RDS on Id < 0.11 n 45 A ■ HIGH CURRENT POWER MODULE


    OCR Scan     		PDF TE45N IRFP450 E81743) STE45N50

    Untitled

    Abstract: No abstract text available
    Text: b^E N AMER P H I L I P S / D I S C R E T E D • b b S B 'm □D3Db2D Product Specification Philips Semiconductors B U K 4 5 4 -4 0 0 B P o w e rM O S tra n s is to r GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope.


    OCR Scan     		PDF O220AB BUK454-400B

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA {DI SC RE TE/ OPTO } TT DE § TDT75SD 001b7SÜ TOS H I B A FIELD E FFECT TRANSISTOR TOSHIBA TO SHIBA 2 S K 7 8 9 SILICON N C H A N N E L MOS TYPE , TT - M ° s H TECHNICAL DATA D I S C R E T E / O P T O ) 99D 16750 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS.


    OCR Scan     		PDF TDT75SD 001b7SÃ 100nA 300uA \jD-100V EGA-2SK789-4 EGA-2SK789-5

    2sd1832

    Abstract: No abstract text available
    Text: 2SB1292 h "7 > '> 7 , $ / T r a n s i s t o r s 2SB1292 i t t i - 7 i* - n & pnp v v =i > k =7> v 7, $ Epitaxial Planar PNP Silicon Transistor Freq. Power Amp. • • ^ Jfi^ tiü S/D im en sio n s Unit: mm) 1) VcE(sat) V cE (sat)= —'0.3V (Typ.) (Ic / I b = - 3 A / - 0 . 3 A )


    OCR Scan     		PDF 2SB1292 2SB1292 2SD1832 T0-220FP SC-67 2sd1832

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : ENN5805 Monolithic Digital 1C LB1817W Is a è I y o I i FDD Spindle Motor Driver Overview Package Dimensions The LB 1817W is a spindle motor driver for low-profile unit: nun floppy disk drives. 3163A-SQFP48 [LB1817W1 Functions and Features


    OCR Scan     		PDF ENN5805 LB1817W 163A-SQFP48 LB1817W1 SQFP48 D053177

    BD 149 transistor

    Abstract: bd 317 BD315 bd318 transistor D317 BD317
    Text: MOTOROLA SC XSTRS/R F 15E D | fc.3b?2S4 0004735 1 | 3 MOTOROLA SEMICONDUCTOR TECHNICAL DATA SILICON HIGH-POWER TRANSISTORS 16 AMPERES SILICON POWER TRANSISTORS . . . d e sig n ed for hig h qu ality am p lifie rs operating up to 100 W atts into 4.0 o h m s load w ith BD315, BD 316 an d into 8.0 o h m s lo ad w ith


    OCR Scan     		PDF BD315, BD318. AN-415) BD 149 transistor bd 317 BD315 bd318 transistor D317 BD317

    Untitled

    Abstract: No abstract text available
    Text: BSP 316 SIPMOS Small-Signal Transistor • P channel • Enhancement mode • Logic Level •'/GS th = -°-8 - - 2-0 V Type ^DS BSP 316 -100 V Type BSP 316 Ordering Code Q67000-S92 -0.65 A ^DS(on) Package Marking 2.2 Q SOT-223 BSP 316 Tape and Reel Information


    OCR Scan     		PDF Q67000-S92 OT-223 E6327

    transistor 2SB 1567

    Abstract: 2sd 316
    Text: 2S B 1 5 8 0 / 2 S B 1 316 / 2 S B 1 5 6 7 / 2 S B 1 287 Transistors 2 S D 2 1 95 / 2S D 1 9 8 0 / 2 S D 1 8 6 7 / 2S D 2 3 9 8 / 2 S D 1 765 Power Transistor —100V, — 2A 2SB1580 / 2SB1316 / 2SB1567 / 2SB1287 1) 2) 3) 4) •A b s o lu te maximum ratings (Ta=25"C)


    OCR Scan     		PDF 2SB1580 2SB1316 2SB1567 2SB1287 2195/2S 1980/2SD 2398/2SD 2SB1580 0Dlb713 O-220FN transistor 2SB 1567 2sd 316

    1316c

    Abstract: nec uPC 1316c PC1316C c1316c mpc1316c uPC1316C 36CW transistor P1 P nec 1316c nec+1316c
    Text: BIPOLAR ANALOG INTEGRATED CIRCUIT / / P C I 316 C DUAL AUDIO POWER AMPLIFIER D E SC R IPTIO N The ¿ PC1316C is a dual audio pow er a m p lifie r in a 14-lead dual in line plastic package, and designed fo r portable audio sets. F E A TU R E S Wide operating voltage range. V c c = 3 t o 1 6 V


    OCR Scan     		PDF uPC1316C 14-lead PC1316C 1316c nec uPC 1316c PC1316C c1316c mpc1316c 36CW transistor P1 P nec 1316c nec+1316c

    transistor k 316

    Abstract: Diode T 316
    Text: SIEMENS BSP 316 SIPMOS Small-Signal Transistor • P channel • Enhancement mode • Logic Level • ^GS th = -0.8.-2.0 V Type ^b s b ^DS(on) Package Marking BSP 316 -100 V -0.65 A 2.2 n SOT-223 BSP 316 Type BSP 316 Ordering Code Q67000-S92 Tape and Reel Information


    OCR Scan     		PDF OT-223 Q67000-S92 E6327 transistor k 316 Diode T 316