TRANSISTOR JC 817 Search Results

TRANSISTOR JC 817 Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
CA3082	Rochester Electronics LLC	CA3082 - Small Signal Bipolar Transistor
CA3081F	Rochester Electronics LLC	CA3081 - Small Signal Bipolar Transistor
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold

TRANSISTOR JC 817 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: M.S. KENNEDY CORP. DUAL HIGH POWER OP-AMP 2541 8170 Thompson Road • Cicero, N.Y. 13039 315 699-9201 FEATURES: • High Output Current - 10 Amps Peak • Wide Power Supply Range - ±10V to ±40V • On Board Current Limit • Fet input • Isolated Case	OCR Scan	2541B Mil-H-38534	PDF
sk1461 Abstract: sk 100 transistor Text: M í f t H,GH SPoEpEampOLTAGE 1 4 6 1 M .S . K E N N E D Y C O R P 315 699-9201 8170 Thompson Road •Cicero, N.Y. 13039 FEATURES: Extremely Fast Wide Supply Range ±15V to ±45V VMOS Output, No S.O.A. Restrictions Large Galn-Bandwldth Product FET Input	OCR Scan	1461B MII-H-38534 sk1461 sk 100 transistor	PDF
Untitled Abstract: No abstract text available Text: KENNEDY fl S CORP M ^K M.S. KENNEDY CORP. b 3E D 5134300 00001Ö2 HIGH POWER AMPLIFIER b34 • HSK 161 8170 Thompson Road • Cicero, N.Y. 13039 (315) 699-9201 FEATURES: • • • • • • High Output Current Wide Supply Range Low Cost Class “C” Output Stage	OCR Scan	MSK-161 MSK-161B Mil-H-38534	PDF
TRANSISTOR BC 137 Abstract: TRANSISTOR BD 338 transistor BD 141 TRANSISTOR 328 SOT89 PXTA14 JC546 transistor BC 56 2PA1015 JC sc70 2PC1815 Text: P h ilip s Sem iconductors Concise Catalogue 1996 SMALL-SIGNAL TRANSISTORS & DIODES & MEDIUM-POWER RECTIFIERS Small-signal transistors G ENER AL-PU R PO SE LO W -FREQ UENCY TRANSISTO RS OVERVIEW PRO DUCT DATA: PAG ES 7-16 LOW -POW ER NPN surface-m ount leaded	OCR Scan	BC107/108 BCY58/59 2N2483/2484 BC546/547 BCX58 JC500/501 JC546-48 PS3704-3706 MPS3904 PS6513-6515 TRANSISTOR BC 137 TRANSISTOR BD 338 transistor BD 141 TRANSISTOR 328 SOT89 PXTA14 JC546 transistor BC 56 2PA1015 JC sc70 2PC1815	PDF
Untitled Abstract: No abstract text available Text: KENNEDY H S M.S. KENNEDY CORP. CORP b3E D • S1343D0 D0002D2 HIGH SPEED/VOLTAGE OP AMP SS2 ■ MSK 1461 (315) 699-9201 8170 Thompson Road • Cicero, N.Y. 13039 FEATURES: • • • • • • Extremely Fast Wide Supply Range ±15V to ±45V VMOS Output, No S.O.A. Restrictions	OCR Scan	S1343D0 D0002D2 1461B Mil-H-38534	PDF
Untitled Abstract: No abstract text available Text: SCS-THOMSON ^ 0 û ^ @ E Œ iM ( 2 M ( S S TD A 8179F TV VERTICAL DEFLECTION BOOSTER AD V A N C E DATA POWER AMPLIFIER FLYBACK SUPPLY VOLTAGE SEPARATED THERMAL PROTECTION CURRENT LIMITED TO GND DESCRIPTIO N Designed for Monitors and high performance TVs,	OCR Scan	8179F TDA8179F TDA8179F A8179F	PDF
Untitled Abstract: No abstract text available Text: M.S. KENNEDY CORP. POWER OPERATIONAL AMPLIFIER 8170 Thompson Road • Cicero, N.Y. 13039 115 315 699-9201 FEATURES: • • • • • High Output Current — 15A peak Ultra Low Thermal Resistance — 0.28°C /W Excellent Linearity — Class A/B Output	OCR Scan	MSK-115 MSK-115B Mil-H-38534	PDF
BUX45 Abstract: transistor et 460 Text: * B U X 45 NPN SILICON TRANSISTOR, TRIPLE DIFFUSED TRANSISTOR SILIC IU M NPN, TRIPLE DIFFUSE ^Preferred device D isp o sitif recommandé High speed, high voltage, switching transistor Transistor de commutation , rapide , haute tension Thermal fatigue inspection	OCR Scan	CB-19 BUX45 transistor et 460	PDF
Untitled Abstract: No abstract text available Text: S G S - T H O M S O N A T /. M «glLilgm 5ÜIDIgi_A M 817 1 9 -0 3 0 RF & MICROWAVE TRANSISTORS TELEMETRY APPLICATIONS P R E L IM IN A R Y D A T A i REFRACTO RY/G O LD METALLIZATION • EM ITTER SITE BALLASTED . LOW THERMAL RESISTANCE . IN PU T/O U TPU T MATCHING	OCR Scan	AM81719-030	PDF
MSC1002 Abstract: AVIA c cube IC CD 4440 amplifier circuit diagram Text: TABLE OF CONTENTS INTRODUCTION ALPHANUMERICAL INDEX Page 4 7 PRODUCTS GUIDE 11 -SYM BO LS -SELECTION GUIDE -C R O S S REFERENCE 13 14 37 DATASHEETS 45 INTRODUCTION SGS-THOMSON MICROELECTRONICS, RF PRODUCTS GROUP RF & MICROWAVE COMPONENTS DATABOOK, 2nd Edition	OCR Scan	28Vdc MSC1002 AVIA c cube IC CD 4440 amplifier circuit diagram	PDF
transistor jc 817 Abstract: 2n5680 WCB410 Text: philips Sem iconductors • ^ 53^31 0 0 HS177 ATT ■ APX Preliminary specification Silicon planar epitaxial transistor 2N5680 b^E D N AP1ER PHIL I P S / D I S C R E T E Q U IC K R E F E R E N C E DATA PARAM ETER SYM BO L MIN. CONDITIONS MAX. ~VCBO “ VcEO	OCR Scan	00HS177 2N5680 PINNING-TO-39 transistor jc 817 2n5680 WCB410	PDF
D 5038 Transistor Horizontal Abstract: amplificateur audio a base de transistor transistor 2n 892 X1 amplificateur BF transistor ST TYN 616 equivalent of transistor bul 38 da bd 317 schema transistor 3055 out hv ESM214 Transistor bdy 58 Text: POWER TRANSISTORS TRANSISTORS DE PUISSANCE 1975 NPN S ILIC O N TR A N S IS TO R S , D IF F U S E D MESA TR A N S IS TO R S NP N S IL IC IU M , M ESA D IF F U S E S 2N 1209 • LF large signal amplification A m p lific a tio n B F grands signaux - High current switching	OCR Scan	CB-69 14f4g D 5038 Transistor Horizontal amplificateur audio a base de transistor transistor 2n 892 X1 amplificateur BF transistor ST TYN 616 equivalent of transistor bul 38 da bd 317 schema transistor 3055 out hv ESM214 Transistor bdy 58	PDF
AN105 infineon Abstract: BCR450 BCR450U BCR401U LXML-PWC1-0040 BCR402u boost bcr401 BCR402R hg lamp ballast LED lights manufacturing technology Text: A pp li c at io n N o t e, R e v . 1. 0 , N ov e m be r 2 00 8 A p p li c a t i o n N o t e N o . 1 5 9 L o w - C o s t, L i n e a r M o de , 7 1 % E f f i c i e n c y 38 0 m A L E D D r i v e r D em o u s i n g t h e B C R 4 0 1 R , B C X 6 8 & LUXEON Rebel LEDs	Original	COMP2006. AN105, BCR401R, BCR402R, BCR401W, BCR402W, BCR401U, BCR402U, BCR405U, BCR450, AN105 infineon BCR450 BCR450U BCR401U LXML-PWC1-0040 BCR402u boost bcr401 BCR402R hg lamp ballast LED lights manufacturing technology	PDF
smd npn 2n2222 Abstract: bf471 BSR62 equivalent EQUIVALENT TRANSISTOR bc549c transistor bf 175 transistor bc547 PH in metal detector tunnel diode BSY95A BF470 BC200 Text: SM ALL-SIGNAL TRANSISTORS page Selection guide A udio and general purpose a p p lica tio n s. 5 HF applications.	OCR Scan	2PC1815L 2PC1815 10xx0. 7Z88986 smd npn 2n2222 bf471 BSR62 equivalent EQUIVALENT TRANSISTOR bc549c transistor bf 175 transistor bc547 PH in metal detector tunnel diode BSY95A BF470 BC200	PDF

BSV64 Abstract: BP317 Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D110 BSV64 NPN medium power transistor Product specification Supersedes data of 1997 Apr 21 File under Discrete Semiconductors, SC04 1997 Sep 04 Philips Semiconductors Product specification NPN medium power transistor BSV64	Original	M3D110 BSV64 MAM317 SCA54 117047/00/03/pp8 BSV64 BP317	PDF
Transistor BC177 Abstract: SOT-18 BC177 pnp transistor DATASHEET Transistor BC107 BC177 TRANSISTOR bc177b BC107 BC177A BC177B BC177 NPN transistor Text: DISCRETE SEMICONDUCTORS DATA SHEET * M3D125 BC177 PNP general purpose transistor Product specification Supersedes data of 1997 May 01 File under Discrete Semiconductors, SC04 1997 Jun 04 Philips Semiconductors Product specification PNP general purpose transistor	Original	M3D125 BC177 BC107. MAM263 SCA54 117047/00/03/pp8 Transistor BC177 SOT-18 BC177 pnp transistor DATASHEET Transistor BC107 BC177 TRANSISTOR bc177b BC107 BC177A BC177B BC177 NPN transistor	PDF
AM81719-040 Abstract: No abstract text available Text: AM81719-040 RF & MICROWAVE TRANSISTORS TELEMETRY APPLICATIONS . . . PRELIMINARY DATA REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 40 W MIN. WITH 7 dB GAIN .400 X .400 2 LFL M228	Original	AM81719-040 AM81719-040	PDF
transistor 2n1711 Abstract: 2N1711 BP317 st 2n1711 "2N1711" 2N1711 philips Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D111 2N1711 NPN medium power transistor Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 May 28 Philips Semiconductors Product specification NPN medium power transistor	Original	M3D111 2N1711 MAM317 SCA54 117047/00/02/pp8 transistor 2n1711 2N1711 BP317 st 2n1711 "2N1711" 2N1711 philips	PDF
transistor jc 817 Abstract: MG150q2yk1 470G jc 817 Text: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG150Q2YK1 TENTATIVE DATA HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. Unit in mm fi-FAST-ON-TAB t 1 1 0 FEATURES: \ JAPAN » 3~M5 P_ 0 & 5 ÌIO .3 . The Collector is Isolated from Case. . Power Transistors and 2 Free Wheeling	OCR Scan	MG150Q2YK1 109B1A 00A/jus transistor jc 817 MG150q2yk1 470G jc 817	PDF
ic str 6707 Abstract: 2n3019 equivalent IC 7430 datasheet datasheet str 6707 str 6707 datasheet IC str 6752 2N3019 BP317 Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D111 2N3019 NPN medium power transistor Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Jun 19 Philips Semiconductors Product specification NPN medium power transistor	Original	M3D111 2N3019 MAM317 SCA54 117047/00/02/pp8 ic str 6707 2n3019 equivalent IC 7430 datasheet datasheet str 6707 str 6707 datasheet IC str 6752 2N3019 BP317	PDF
2108 npn transistor Abstract: BFX34 BP317 Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D111 BFX34 NPN switching transistor Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Apr 22 Philips Semiconductors Product specification NPN switching transistor BFX34	Original	M3D111 BFX34 MAM317 SCA54 117047/00/02/pp8 2108 npn transistor BFX34 BP317	PDF
BP317 Abstract: LAE4002S SC15 Text: DISCRETE SEMICONDUCTORS DATA SHEET LAE4002S NPN microwave power transistor Product specification Supersedes data of June 1992 File under Discrete Semiconductors, SC15 1997 Feb 18 Philips Semiconductors Product specification NPN microwave power transistor LAE4002S	Original	LAE4002S OT100 SCA53 127147/00/02/pp8 BP317 LAE4002S SC15	PDF
SOT-100 Abstract: BP317 LAE4001R SC15 transistor jc 817 sot100 Text: DISCRETE SEMICONDUCTORS DATA SHEET LAE4001R NPN microwave power transistor Product specification Supersedes data of June 1992 File under Discrete Semiconductors, SC15 1997 Feb 18 Philips Semiconductors Product specification NPN microwave power transistor LAE4001R	Original	LAE4001R OT100 SCA53 127147/00/02/pp8 SOT-100 BP317 LAE4001R SC15 transistor jc 817 sot100	PDF
transistor 2n1613 Abstract: 2N1613 2n1613 st BP317 1na120 Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D111 2N1613 NPN medium power transistor Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Apr 11 Philips Semiconductors Product specification NPN medium power transistor	Original	M3D111 2N1613 MAM317 SCA54 117047/00/02/pp8 transistor 2n1613 2N1613 2n1613 st BP317 1na120	PDF

TRANSISTOR JC 817 Search Results

TRANSISTOR JC 817 Result Highlights (5)

TRANSISTOR JC 817 Datasheets Context Search

Untitled

sk1461

Untitled

TRANSISTOR BC 137

Untitled

Untitled

Untitled

BUX45

Untitled

MSC1002

transistor jc 817

D 5038 Transistor Horizontal

AN105 infineon

smd npn 2n2222

BSV64

Transistor BC177

AM81719-040

transistor 2n1711

transistor jc 817

ic str 6707

2108 npn transistor

BP317

SOT-100

transistor 2n1613