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    TRANSISTOR J9 Search Results

    TRANSISTOR J9 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CA3082 Rochester Electronics LLC CA3082 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    CA3081F Rochester Electronics LLC CA3081 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR J9 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    MN1280

    Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
    Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor


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    oz960

    Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
    Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors


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    KIA7900PI TC7SH04FU KIC7SH04FU SC604* KAC3301QN M51943 KIA7042AP/AF TC7SH08FU KIC7SH08FU LT1937 oz960 khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j PDF

    la 4440 amplifier circuit diagram 300 watt

    Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
    Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode


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    AN-784A la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492 PDF

    SGA9289Z

    Abstract: No abstract text available
    Text: SGA9289Z SGA9289Z Medium Power Discrete SiGe Transistor MEDIUM POWER DISCRETE SiGe TRANSISTOR Package: SOT-89 Product Description Features RFMD’s SGA9289Z is a high performance transistor designed for operation to 3GHz. With optimal matching at 2GHz, OIP3 =42.5dBm, and P1dB =27.5dBm. This


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    SGA9289Z OT-89 SGA9289Z SGA9289Zâ SGA9289ZSQ SGA9289ZSR SGA9289Z-EVB1 PDF

    Untitled

    Abstract: No abstract text available
    Text: SGA9189Z SGA9189Z Medium Power Discrete SiGe Transistor MEDIUM POWER DISCRETE SiGe TRANSISTOR Package: SOT-89 Product Description Features RFMD’s SGA9189Z is a high performance transistor designed for operation to 3GHz. With optimal matching at 2GHz, OIP3 =39dBm, and P1dB =25.5dBm. This RF


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    SGA9189Z OT-89 SGA9189Z 39dBm, SGA9189Zâ SGA9189ZSQ SGA9189ZSR PDF

    SGA9289Z

    Abstract: MARKING P2Z SGA-9289z SGA9289ZSR rf transistor MARKING CODE 016 marking code of sot89 transistor J4-87 transistor J9
    Text: SGA9289Z SGA9289Z Medium Power Discrete SiGe Transistor MEDIUM POWER DISCRETE SiGe TRANSISTOR Package: SOT-89 Product Description Features RFMD’s SGA9289Z is a high performance transistor designed for operation to 3GHz. With optimal matching at 2GHz, OIP3 =42.5dBm, and P1dB =27.5dBm. This


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    SGA9289Z SGA9289Z OT-89 SGA9289Z" SGA9289ZSQ SGA9289ZSR SGA9289Z-EVB1 MARKING P2Z SGA-9289z rf transistor MARKING CODE 016 marking code of sot89 transistor J4-87 transistor J9 PDF

    sga9189z

    Abstract: marking p1z SGA-9189Z marking p1z transistor
    Text: SGA9189Z SGA9189Z Medium Power Discrete SiGe Transistor MEDIUM POWER DISCRETE SiGe TRANSISTOR Package: SOT-89 Product Description Features RFMD’s SGA9189Z is a high performance transistor designed for operation to 3GHz. With optimal matching at 2GHz, OIP3 =39dBm, and P1dB =25.5dBm. This RF


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    SGA9189Z SGA9189Z OT-89 39dBm, SGA9189Z" SGA9189ZSQ SGA9189ZSR marking p1z SGA-9189Z marking p1z transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: SGA9189Z SGA9189Z Medium Power Discrete SiGe Transistor Medium Power Discrete SiGe Transistor Package: SOT-89 Product Description Features RFMD’s SGA9189Z is a high performance transistor designed for operation to 3GHz. With optimal matching at 2GHz, OIP3 = 39dBm, and P1dB = 25.5dBm. This


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    SGA9189Z SGA9189Z OT-89 39dBm, SGA9189ZSQ SGA9189ZSR SGA9189Z-EVB1 PDF

    SGA9189

    Abstract: marking p1z 130C SGA-9189 SGA9189Z trace code marking RFMD SGA-9189Z marking p1z transistor
    Text: SGA-9189 Z SGA-9189(Z) Medium Power Discrete SiGe Transistor MEDIUM POWER DISCRETE SiGe TRANSISTOR RFMD Green, RoHS Compliant, Pb-Free (Z Part Number) Package: SOT-89 Product Description Features RFMD’s SGA-9189 is a high performance transistor designed for operation to


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    SGA-9189 OT-89 39dBm, SGA9189Z" SGA9189" SGA-9189Z EDS-101497 SGA9189 marking p1z 130C SGA9189Z trace code marking RFMD SGA-9189Z marking p1z transistor PDF

    MARKING P2Z

    Abstract: SGA9289 SGA-9289 130C J231 transistor j392 sot89
    Text: SGA-9289 Z SGA-9289(Z) Medium Power Discrete SiGe Transistor MEDIUM POWER DISCRETE SiGe TRANSISTOR RFMD Green, RoHS Compliant, Pb-Free (Z Part Number) Package: SOT-89 Product Description Features RFMD’s SGA-9289 is a high performance transistor designed for operation to


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    SGA-9289 OT-89 SGA9289Z" SGA9289" SGA-9289Z EDS-101498 SGA-9289 MARKING P2Z SGA9289 130C J231 transistor j392 sot89 PDF

    2sb504

    Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
    Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle


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    transistor J9

    Abstract: No abstract text available
    Text: KSD1943 NPN EPITAXIAL SILICON TRANSISTOR HIGH j9 POWER TRANSISTOR TO -220 ABSOLUTE MAXIMUM RATINGS C haracteristic Sym bol Rating Unit VcBO 80 60 8 3 40 1 50 —5 5 ~ 1 50 V V V A W °C °C Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage


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    KSD1943 transistor J9 PDF

    Untitled

    Abstract: No abstract text available
    Text: L ALLEGRO MICROSYSTEMS INC •=13 DSDM33Ö QQ03771 ö ■ T-91-01 P R O C E S S NJ903 Process NJ903 N-Channel Junction Field-Effect Transistor Proce ss N J903 is an N-channel junction fleldeffect transistor designed for very low O N resistance analog or digital switching applications.


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    DSDM33Ã QQ03771 T-91-01 NJ903 050433fl 0G03772 PDF

    RN1901FS

    Abstract: RN1902FS RN1903FS RN1904FS RN1905FS RN1906FS RN2901FS RN2906FS
    Text: RN1901FS~RN1906FS TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor Built-in Transistor) RN1901FS,RN1902FS,RN1903FS RN1904FS,RN1905FS,RN1906FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm


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    RN1901FS RN1906FS RN1902FS RN1903FS RN1904FS RN1905FS RN2901FS RN2906FS RN1903FS RN1906FS RN2906FS PDF

    Untitled

    Abstract: No abstract text available
    Text: RN1901FS~RN1906FS TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor Built-in Transistor) RN1901FS,RN1902FS,RN1903FS RN1904FS,RN1905FS,RN1906FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm


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    RN1901FS RN1906FS RN1902FS RN1903FS RN1904FS RN1905FS RN2901FS RN2906FS PDF

    7430 ic data sheet

    Abstract: MSA094 339 marking code transistor BP317 LV2327E40R SC15 sot445
    Text: DISCRETE SEMICONDUCTORS DATA SHEET LV2327E40R NPN microwave power transistor Product specification Supersedes data of November 1994 File under Discrete Semiconductors, SC15 1997 Feb 18 Philips Semiconductors Product specification NPN microwave power transistor


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    LV2327E40R SCA53 127147/00/02/pp8 7430 ic data sheet MSA094 339 marking code transistor BP317 LV2327E40R SC15 sot445 PDF

    RN1903FS

    Abstract: RN1902FS RN1901FS RN1904FS RN1905FS RN1906FS RN2901FS RN2906FS
    Text: RN1901FS~RN1906FS TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor Built-in Transistor) RN1901FS,RN1902FS,RN1903FS RN1904FS,RN1905FS,RN1906FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm


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    RN1901FS RN1906FS RN1902FS RN1903FS RN1904FS RN1905FS RN2901FS RN2906FS RN1903FS RN1906FS RN2906FS PDF

    PVB42004X

    Abstract: SC15 sot445
    Text: DISCRETE SEMICONDUCTORS DATA SHEET PVB42004X NPN microwave power transistor Product specification Supersedes data of June 1992 File under Discrete Semiconductors, SC15 1997 Feb 19 Philips Semiconductors Product specification NPN microwave power transistor


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    PVB42004X OT445A SCA53 127147/00/02/pp8 PVB42004X SC15 sot445 PDF

    Untitled

    Abstract: No abstract text available
    Text: RN1901FS~RN1906FS TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor Built-in Transistor) RN1901FS,RN1902FS,RN1903FS RN1904FS,RN1905FS,RN1906FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm


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    RN1901FS RN1906FS RN1902FS RN1903FS RN1904FS RN1905FS RN2901FS RN2906FS PDF

    Untitled

    Abstract: No abstract text available
    Text: RN1901FS~RN1906FS TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor Built-in Transistor) RN1901FS,RN1902FS,RN1903FS RN1904FS,RN1905FS,RN1906FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm


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    RN1901FS RN1906FS RN1902FS RN1903FS RN1904FS RN1905FS RN1902FS PDF

    Untitled

    Abstract: No abstract text available
    Text: RN1970FS,RN1971FS TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1970FS,RN1971FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications 1.0±0.05 Complementary to RN2970FS, RN2971FS


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    RN1970FS RN1971FS RN2970FS, RN2971FS PDF

    Untitled

    Abstract: No abstract text available
    Text: RN1901FS~RN1906FS TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1901FS,RN1902FS,RN1903FS RN1904FS,RN1905FS,RN1906FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm


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    RN1901FS RN1906FS RN1902FS RN1903FS RN1904FS RN1905FS RN1905FS PDF

    Philips 2222-030

    Abstract: philips resistor 2322 4312 020 36640 philips catalog potentiometer 100 pf, ATC Chip Capacitor 100A BLF543 enamelled copper wire MDA487 class b power transistors datasheet current gain IEC -320 C14
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLF543 UHF power MOS transistor Product specification File under Discrete Semiconductors, SC08b October 1992 Philips Semiconductors Product specification UHF power MOS transistor FEATURES BLF543 PIN CONFIGURATION • High power gain


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    BLF543 SC08b MBB072 MBA931 OT171 Philips 2222-030 philips resistor 2322 4312 020 36640 philips catalog potentiometer 100 pf, ATC Chip Capacitor 100A BLF543 enamelled copper wire MDA487 class b power transistors datasheet current gain IEC -320 C14 PDF

    acrian RF POWER TRANSISTOR

    Abstract: transistor A 584 acrian inc ACRIAN acrian 2001 584 TRANSISTOR acrian ic acrian 1 20w50 acrian rf power
    Text: O 1 8 2 9 9 8 . ACFjtlAN INC J97D ACRIAN INC ~T7 de 01406 r in ia e ooomoh □ ilKORIAN GENERAL 2005 D E S C R IP T IO N The 2005 is a common base transistor capable of providing 5 watts of C W RF output power at 2000 MHz. This hermetically sealed transistor is specifically designed


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    125Woâ acrian RF POWER TRANSISTOR transistor A 584 acrian inc ACRIAN acrian 2001 584 TRANSISTOR acrian ic acrian 1 20w50 acrian rf power PDF