TRANSISTOR J25 Search Results

TRANSISTOR J25 Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini

TRANSISTOR J25 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
la 4440 amplifier circuit diagram 300 watt Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492 Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode	OCR Scan	AN-784A la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492	PDF
transistor s11 s12 s21 s22 Abstract: NE856M02-T1-AZ NE856M02 Text: SILICON TRANSISTOR NE856M02 NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER FEATURES • • PACKAGE OUTLINE M02 BOTTOM VIEW 4.5±0.1 1.6±0.2 C E B E 0.8 MIN DESCRIPTION The NE856M02 is an NPN silicon epitaxial bipolar transistor	Original	OT-89 NE856M02 NE856M02 transistor s11 s12 s21 s22 NE856M02-T1-AZ	PDF
transistor bfr96 Abstract: BFR96 BFR964 RF NPN POWER TRANSISTOR 3 GHZ 200 watts motorola J50 datasheet for transistor bfr96 BFR96 TRANSISTOR BFR961 RF TRANSISTOR 1.5 GHZ BFR96 motorola Text: MOTOROLA Order this document by BFR96/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistor BFR96 The BFR96 transistor uses the same state–of–the–art microwave transistor chip which features fine–line geometry, ion–implanted arsenic emitters and gold	Original	BFR96/D BFR96 BFR96 BFR96/D* DEVICEBFR96/D transistor bfr96 BFR964 RF NPN POWER TRANSISTOR 3 GHZ 200 watts motorola J50 datasheet for transistor bfr96 BFR96 TRANSISTOR BFR961 RF TRANSISTOR 1.5 GHZ BFR96 motorola	PDF
2SC4867 Abstract: 16T MARKING 2SC4871 FH201 ZS21 TA-1315 1hz OUTPUT 7CJE Text: Ordering number:ENN6117 NPN Epitaxial Planar Silicon Composite Transistor FH201 SAÈÈYOI VCO OSC Circuit Applications Features Package Dimensions • C om p osite type w ith a buffer transistor 2 S C 4 8 7 1 and a oscillator transistor (2 S C 4 8 6 7 ) contained in	OCR Scan	ENN6117 FH201 2SC4871) 2SC4867) FH20I 2SC4871 2SC4867, FH201] 7117D7L 0D544b7 2SC4867 16T MARKING FH201 ZS21 TA-1315 1hz OUTPUT 7CJE	PDF
IC 1709 CN Abstract: 2SC5226 2SC5245 FH202 TS4162 ZS12 S21C TA-1708 D054471 Text: Ordering number:ENN6220 N PN Epitaxial Planar Silicon Composite Transistor FH202 SAÊÊYOI VCO OSC Circuit Applications Features Package Dimensions •Composite type with a buffer transistor 2SC5226 and a oscillator transistors (TS4162) contained in the	OCR Scan	ENN6220 FH202 2SC5226) TS4162) FH202 2SC5245 TS4162, FH202] IS12I IC 1709 CN 2SC5226 TS4162 ZS12 S21C TA-1708 D054471	PDF
Untitled Abstract: No abstract text available Text: Philips Semiconductors Product Specification PowerMOS transistor Logic level FET _ . GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies	OCR Scan	BUK553-60A/B BUK553 T0220AB	PDF
7746-1 Abstract: 7746-1 transistor 33167 NSF2250WT1 34993 98938 60931 9031 Text: NSF2250WT1 NPN Silicon Oscillator and Mixer Transistor The NSF2250WT1 NPN silicon epitaxial bipolar transistor is intended for use in general purpose UHF oscillator and mixer applications. It is suitable for automovtive keyless entry and TV tuner designs.	Original	NSF2250WT1 NSF2250WT1 r14525 NSF2250WT1/D 7746-1 7746-1 transistor 33167 34993 98938 60931 9031	PDF
7746-1 Abstract: 7746-1 transistor NSF2250WT1 Text: NSF2250WT1 NPN Silicon Oscillator and Mixer Transistor The NSF2250WT1 NPN silicon epitaxial bipolar transistor is intended for use in general purpose UHF oscillator and mixer applications. It is suitable for automovtive keyless entry and TV tuner designs.	Original	NSF2250WT1 7746-1 7746-1 transistor	PDF
2N2222A 338 Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931 Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK	OCR Scan	2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931	PDF
1011 sot323 marking Abstract: SC 2313 78272 7746-1 110981 Text: NSF2250WT1 Advance Information NPN Silicon Oscillator and Mixer Transistor The NSF2250WT1 NPN silicon epitaxial bipolar transistor is intended for use in general purpose UHF oscillator and mixer applications. It is suitable for automovtive keyless entry and TV tuner	Original	NSF2250WT1 r14525 NSF2250WT1/D 1011 sot323 marking SC 2313 78272 7746-1 110981	PDF
7746-1 transistor Abstract: 7746-1 67723 78272 54652 Text: NSF2250WT1 Advance Information NPN Silicon Oscillator and Mixer Transistor The NSF2250WT1 NPN silicon epitaxial bipolar transistor is intended for use in general purpose UHF oscillator and mixer applications. It is suitable for automovtive keyless entry and TV tuner	Original	NSF2250WT1 NSF2250WT1 7746-1 transistor 7746-1 67723 78272 54652	PDF
3-pin IC 7806 Abstract: NSF2250WT1 89445 7746-1 transistor 34993 Text: NSF2250WT1 Advance Information NPN Silicon Oscillator and Mixer Transistor The NSF2250WT1 NPN silicon epitaxial bipolar transistor is intended for use in general purpose UHF oscillator and mixer applications. It is suitable for automovtive keyless entry and TV tuner	Original	NSF2250WT1 NSF2250WT1 r14525 NSF2250WT1/D 3-pin IC 7806 89445 7746-1 transistor 34993	PDF
BP 109 transistor Abstract: transistor BP 109 CHK015A-SMA CHK015A HEMT Amplifier transistor GaN transistor 04 N 70 BP Gan transistor CHK-01 Text: Advance Information: AI1010 15W Power Packaged Transistor GaN HEMT on SiC UMS’s CHK015A is an unmatched Packaged Gallium Nitride High Electron Mobility Transistor. It offers a general purpose and broadband solution for a variety of RF power applications.	Original	AI1010 CHK015A AN0019 AN0020 ES-CHK015A-SMA AI10101182 BP 109 transistor transistor BP 109 CHK015A-SMA HEMT Amplifier transistor GaN transistor 04 N 70 BP Gan transistor CHK-01	PDF
Untitled Abstract: No abstract text available Text: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION BUK466-200A QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for use in surface mount applications. The device is intended for use in	OCR Scan	BUK466-200A SQT404	PDF

KF 13002 F Abstract: TRANSISTOR 9642 kf 13002 rbm 0505 2SC5787 NE894M13 NE894M13-A NE894M13-T3-A S21E Q1 k 1821 Text: NPN SILICON TRANSISTOR NE894M13 OUTLINE DIMENSIONS Units in mm FEATURES PACKAGE OUTLINE M13 0.1 3 0.2+0.1 ñ0.05 0.3 0.1 0.125+0.1 ñ0.05 NEC's NE894M13 transistor is designed for oscillator applications above 3 GHz. The NE894M13 features low voltage, low	Original	NE894M13 NE894M13 KF 13002 F TRANSISTOR 9642 kf 13002 rbm 0505 2SC5787 NE894M13-A NE894M13-T3-A S21E Q1 k 1821	PDF
transistor c 6073 Abstract: 0809 af kf 982 c 4235 transistor npn BF 6591 2SC5786 BJT BF 331 SiS 671 AN1026 NE894M03 Text: NEC's NPN SILICON TRANSISTOR NE894M03 FEATURES • OUTLINE DIMENSIONS Units in mm MINIATURE M03 PACKAGE: – Small transistor outline – Low profile / 0.59 mm package height – Flat lead style for better RF performance • IDEAL FOR > 3 GHz OSCILLATORS	Original	NE894M03 NE894M03 AN1026. 83e-15 transistor c 6073 0809 af kf 982 c 4235 transistor npn BF 6591 2SC5786 BJT BF 331 SiS 671 AN1026	PDF
POE-15 Abstract: RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ 18801 PH1819-15N bipolar power transistor wacom Text: * s z E f FEYi = -= -=-= = ,’ E an AMP company Wireless Bipolar Power Transistor, 1.78 - 1.90 GHz . 15W PH1819-15N v2.00 Features NPN Silicon Microwave Power Transistor Designed for Linear Amplifier Applications Class AB: -34 dBc Typ 3rd IMD at 15 Watts PEP	Original	PH1819-15N POE-15 RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ 18801 PH1819-15N bipolar power transistor wacom	PDF
BFP620 acs Abstract: BFP620 s parameters 4ghz Text: BFP620 NPN Silicon Germanium RF Transistor 3 • High gain low noise RF transistor 4 • Provides outstanding performance for a wide range of wireless applications • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.7 dB at 1.8 GHz	Original	BFP620 VPS05605 OT343 -j100 Aug-29-2001 BFP620 acs BFP620 s parameters 4ghz	PDF
transistor s11 s12 s21 s22 Abstract: 5091-8350E MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT high power FET transistor s-parameters s11a1 s-parameter s11 s12 s21 Text: High-Frequency Transistor Primer Part II Noise and S-parameter Characterization This is the second part of the Hewlett-Packard High Frequency Transistor Primer series. It is an introduction to the noise and S-parameter characterization of GaAs FET and silicon bipolar	Original	5091-8350E 5968-1411E transistor s11 s12 s21 s22 5091-8350E MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT high power FET transistor s-parameters s11a1 s-parameter s11 s12 s21	PDF
2SC2055 Abstract: No abstract text available Text: MITSUBISHI RF POWER TRANSISTOR 2SC20S5 NPN EPITAXIAL PLANAR TYPE DESCRIPTION 2SC2055 is a silicon NPN epitaxial planar type transistor designed for RF amplifiers on VHF band portable or hand-held radio applications. FEATURES • High power gain: Gpe > 1 3 d B	OCR Scan	2SC20S5 2SC2055 175MHz --j25iJ 5k7k10k 2SC2055	PDF
RF transistors with s-parameters Abstract: MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT transistor s11 s12 s21 s22 Hewlett-Packard transistor microwave Text: High-Frequency Transistor Primer Part II Noise and S-parameter Characterization This is the second part of the Hewlett-Packard High Frequency Transistor Primer series. It is an introduction to the noise and S-parameter characterization of GaAs FET and silicon bipolar	Original	5091-8350E 5968-1411E RF transistors with s-parameters MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT transistor s11 s12 s21 s22 Hewlett-Packard transistor microwave	PDF
2SC2055 Abstract: No abstract text available Text: MITSUBISHI RF POWER TRANSISTOR 2SC2055 NPN EPITAXIAL PLANAR TYPE DESCRIPTION OUTLINE DRAWING 2SC2055 is a silicon NPN epitaxial planar type transistor designed for RF amplifiers on VHF band portable or hand-held radio applications. Dimensions i 0 5 .1 M A X	OCR Scan	2SC2055 2SC2055 175MHz --j25iJ 5k7k10k	PDF
high power FET transistor s-parameters Abstract: transistor s11 s12 s21 s22 FET transistors with s-parameters transistor s parameters noise 2S12 circle of constant Noise MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT bipolar transistor ghz s-parameter s21a1 Text: High-Frequency Transistor Primer Part II Noise and S-parameter Characterization This is the second part of the Agilent Technologies High Frequency Transistor Primer series. It is an introduction to the noise and S-parameter characterization of GaAs FET and silicon bipolar	Original	5091-8350E 5968-1411E high power FET transistor s-parameters transistor s11 s12 s21 s22 FET transistors with s-parameters transistor s parameters noise 2S12 circle of constant Noise MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT bipolar transistor ghz s-parameter s21a1	PDF
bipolarics Abstract: 2N2904 BPT23E02 Text: BIPOLARICS, INC. Part Number BPT23E02 SILICON MICROWAVE POWER TRANSISTOR PRODUCT DATA SHEET FEATURES: • High DESCRIPTION AND APPLICATIONS: Output Power 2 Watts @ 2.3 GHz • High Gain Bandwidth Product f = 6.0 GHz @ IC = 320 mA t Bipolarics' BPT23E02 is a high performance silicon bipolar transistor	Original	BPT23E02 BPT23E02 2N2904 200pF 2300MHz bipolarics 2N2904	PDF

TRANSISTOR J25 Search Results

TRANSISTOR J25 Result Highlights (5)

TRANSISTOR J25 Datasheets Context Search

la 4440 amplifier circuit diagram 300 watt

transistor s11 s12 s21 s22

transistor bfr96

2SC4867

IC 1709 CN

Untitled

7746-1

7746-1

2N2222A 338

1011 sot323 marking

7746-1 transistor

3-pin IC 7806

BP 109 transistor

Untitled

KF 13002 F

transistor c 6073

POE-15

BFP620 acs

transistor s11 s12 s21 s22

2SC2055

RF transistors with s-parameters

2SC2055

high power FET transistor s-parameters

bipolarics