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    TRANSISTOR J 3305 Search Results

    TRANSISTOR J 3305 Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR J 3305 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    HMXR-5001

    Abstract: 13001 YF 09 TRANSISTOR HP 5082 7000 5082-0825 33150A 2N6838 Hxtr 3101 Hxtr 3101 transistor 5082-2815 hsch-1001
    Text: For Complete . Application &Sales . '. Information ' ,.' • Call ' Joseph Masarich Sales Representative HEWLETT PACKARD . NEELY "Sales Region 3003 scon BLVD. SANTA CLARA, CA 95050 408 988-7234 Microwave Semiconductor Diode and Transistor Designers Catalog


    Original     		PDF

    ph 4148 zener diode

    Abstract: philips zener diode ph 4148 pcf0700p Zener Diode ph 4148 PCA1318P ck2605 pcf0700p/051 philips Pca1318p on4673 Zener Diode 4148
    Text: PHILIPS SEMICONDUCTORS PRODUCT DISCONTINUATION NOTICE NUMBER DN-40 DATED DECEMBER 31, 1998 EXHIBIT 'A' PHILIPS PHILIPS PHILIPS PART NUMBER PKG PART DESCRIPTION LAST TIME LAST TIME REPLACEMENT STATUS 12 NC NUMBER BUY DATE DLVY DATE PART CODE S COMMENTS DISCONTINUED INTEGRATED CIRCUIT PRODUCTS


    Original     		PDF DN-40 74ABT126 74ABT2240 X3G-BZX84-C7V5 X3G-BZX84-C9V1 ph 4148 zener diode philips zener diode ph 4148 pcf0700p Zener Diode ph 4148 PCA1318P ck2605 pcf0700p/051 philips Pca1318p on4673 Zener Diode 4148

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE DEVELOPMENT DATA OLE D ~m LbS3T31 DDmTfc,3 • LTE21025R This data sheat contains advance Information and specifications are subject to change w ithout notice. J V r- 2 1 - 0 *? MICROWAVE LINEAR POWER TRANSISTOR N-P’ N Silicon transistor fo r use in common-emitter class-A linear power amplifiers up to 4,2 GHz.


    OCR Scan     		PDF LbS3T31 LTE21025R FO-41B)

    transistor d 13009

    Abstract: IC 566 vco transistor j 13009 IC 8085 pin
    Text: PRELIMINARY DATA SHEET NEC NPN SILICON EPITAXIAL TWIN TRANSISTOR FEATURES_ • OUTLINE DIMENSIONS Units in mm LOW NOISE: Package Outline TS06 Q 1:N F= 1.2 dB TYP a tf = 1 GHz, VCE = 3 V, Ic = 7 mA 2.1 ±0.1 j'•*— 1.25 ± 0.1 -*■


    OCR Scan     		PDF UPA832TF 1S21EI2 NE856, NE685) UPA832TF NE85630 NE68530 UPA835TF UPA832TF-T1 transistor d 13009 IC 566 vco transistor j 13009 IC 8085 pin

    pnp germanium transistor

    Abstract: boonton 91-6c
    Text: M IL -S-19500/77C 6 March 1968 SUPERSEDING M IL -T -19500/77B 5 Ju ly 1961 See 6 . 3. MILITARY SPECIFICA TION SEMICONDUCTOR DEVICE, TRANSISTOR, P N P , GERMANIUM, LOW-POWER m tm w 1 lJtTC j oxto n o £ 1N O Î 7U T his sp e cific atio n is m an d ato ry fo r u se by a ll D e p a rt­


    OCR Scan     		PDF MIL-S-19500/77C 19500/77B pnp germanium transistor boonton 91-6c

    LT1817 transistor

    Abstract: LT1817
    Text: MO TO RO LA SC X ST RS /R F MbE D • b3fc>72S4 001450*5 fl ■ HOTt MOTOROLA T -3 ? r0 5 m S E M IC O N D U C T O R m— mm TECHNICAL DATA LT1817 The RF Line N P N S ilic o n H igh F re q u e n c y T ra n s is to r f j = 1000 MHz MIN HIGH FREQUENCY TRANSISTOR


    OCR Scan     		PDF LT1817 14E1G C01LECT0R-8ASE LT1817 transistor LT1817

    SN7400

    Abstract: 3305 J 3305
    Text: MOS LSI TMS 3304 LR-TRIPLE 66-BIT DYNAMIC SHIFT REGISTER TMS 3305 LR-TRIPLE 64-BIT DYNAMIC SHIFT REGISTER > z c > features • 5-MHz operation • T T L compatibility • Single-ended open-drain output buffers • Low power dissipation 33 < tovj description


    OCR Scan     		PDF 64-BIT 66-BIT sn7426 SN7400 3305 J 3305

    trimpot 25k

    Abstract: J 3305 potentiometer 5 pins 3305P-1-103 3305W-1-102 10 ohms potentiometer 3305P-1-102 3305W 3305W-1-500 3305p-1-101
    Text: ADJUSTMENT POTENTIOMETER M odel 3 3 0 5 S in g le T u rn C o m m e rc ia l POURNS c T R IM IT * P o te n tio m e te r W ire w o u n d E le m e n t Actual Size FEATURES • Low cost commercial potentiometer 3305P • Sealed to prevent contamination from fluxing,


    OCR Scan     		PDF 3305P 3305P 3305P-1-100 305W-M00 3305P-1-20. trimpot 25k J 3305 potentiometer 5 pins 3305P-1-103 3305W-1-102 10 ohms potentiometer 3305P-1-102 3305W 3305W-1-500 3305p-1-101

    tms 3305

    Abstract: J 3305 66-BIT
    Text: T M S 3304 L R - T R I P L E 66-BIT D Y N A M I C S H I F T R E G I S T E R T M S 3305 L R - T R I P L E 64-BIT D Y N A M I C S H I F T RE GI ST ER MOS LSI features • 5-MHz operation • T T L com patibility • Single-ended open-drain output buffers •


    OCR Scan     		PDF 66-BIT 64-BIT tms 3305 J 3305

    transistor J 3305-1

    Abstract: 87115 LM2578AH S1A-T1
    Text: SÔE D b S ü l l E 1! D07b727 7D? « N S C E National NATL SEMICOND LINEAR ~ 7 ^ 5 Î - / / - 3 / Semiconductor LM1578A/LM2578A/LM3578A Switching Regulator General Description Features The LM1578A is a switching regulator which can easily be set up for such DC-to-DC voltage conversion circuits as the


    OCR Scan     		PDF D07b727 578A/LM2578A/LM3578A LM1578A/LM2578A/LM3578A LM1578A 1N5819 PE-64287. transistor J 3305-1 87115 LM2578AH S1A-T1

    HC 8436

    Abstract: marcon capacitor ce marcon CE capacitor seiko hc 1000 transistor lr 3303 CACFM D1NS4 diode transistor 2sC3279 S-8435 equivalent tr 2SC3279 equivalent
    Text: STEP-UP SWITCHING REGULATOR S -8 4 3 5 /8 4 3 6 Series The S-8435/8436 Series is a CMOS step-up sw itching regulator that consists of a reference voltage source, a CR oscillation circuit, a pow er MOS FET, a diode, and a com parator. T he output voltage is


    OCR Scan     		PDF S-8435/8436 S-8435 S-8436 RCH654 2SK1112* RCH855 2SK1112. HC 8436 marcon capacitor ce marcon CE capacitor seiko hc 1000 transistor lr 3303 CACFM D1NS4 diode transistor 2sC3279 S-8435 equivalent tr 2SC3279 equivalent

    BFW17A

    Abstract: bfw17a philips semiconductor lem HA
    Text: NPN 1 GHz wideband transistor 5bE T> m PHI! IPS INTERNATIONAL DESCRIPTION ^ '" ^ 3 3 BFW17A 711Dfl2b GOMbOEB Mfc.3 « P H I N PINNING NPN transistor in a SOT5 TO-39 metal envelope, with the collector connected to the case. The transistor has extremely good


    OCR Scan     		PDF BFW17A 711Dfl2b D04fc 0D4b025 BFW17A bfw17a philips semiconductor lem HA

    Untitled

    Abstract: No abstract text available
    Text: OLE D N AUER PHILIPS/DISCRETE 86D MAINTENANCE TYPE ^5 3 *1 3 1 DOIHQIQ 1 T ~ 3 ?-o y D 01852 • BLX96 _Jl U.H.F. LINEAR POWER TRANSISTOR N-P-N multi-emitter silicon planar epitaxial transistor primarily for use in linear u .h .f. amplifiers for television transposers and transmitters.


    OCR Scan     		PDF BLX96 7ZH737 bbS3T31 -16dB)

    yto oscillator

    Abstract: MC34129D
    Text: MC34129 MC33129 MOTOROLA SEMICONDUCTOR! TECHNICAL DATA High Performance Current Mode Controller HIGH PERFORMANCE CURRENT MODE CONTROLLER The MC34129 series are high performance current mode switching regulators specifically designed for use in low power digital telephone applications. These


    OCR Scan     		PDF MC34129 MC33129 MC34129, yto oscillator MC34129D

    BLX92A

    Abstract: BLX92 em 179 sfe 5,5 ma IEC134 transistor IR 944
    Text: PHILIPS INTERNATIONAL HIE D E3 TllOfiEb 0027Ö37 G E3P HI N BLX92A M A IN T E N A N C E T Y P E U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B o r C with a supply voltage up to 28 V. The transistor is resistance stabilized and is guaranteed to withstand severe


    OCR Scan     		PDF BLX92A BLX92A BLX92 em 179 sfe 5,5 ma IEC134 transistor IR 944

    la 4440 amplifier circuit diagram 300 watt

    Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
    Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode


    OCR Scan     		PDF AN-784A la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492

    BFQ268

    Abstract: No abstract text available
    Text: Philips Semiconductors_ ,—. 7^ 3 3 - 0 5 - NPN 1 GHz video transistor PH ILIPS INTERNATIONAL DESCRIPTION Product specification - BFQ268; BFQ268/1 5bE D • 7 1 1 D flP b OOMShS? 344 « P H I N PINNING NPN silicon epitaxial transistor with


    OCR Scan     		PDF BFQ268; BFQ268/1 711002t) BFQ268 OT172A1) BFQ268/I OT172A3 BFQ268/I 004SbbD

    transistor 7905

    Abstract: No abstract text available
    Text: MOTOROLA SC XSTRS/R 4bE F D • b3b?2S4 00=14326 2 « flO T b -r-3 2 > " 0 = > MOTOROLA ■ SEM ICONDUCTOR TECHNICAL DATA T h e R F L in e 4 W — 175 MHz NPN SILICON RF POWER TRANSISTOR RF POWER TRANSISTOR . . . designed for 12.5 V olt large-signal power amplifier applications


    OCR Scan     		PDF

    A83A marking

    Abstract: 113A db 435A 95A 640 marking 113a LTE21009R LTE21009RA transistor 81 110 w 85 MARKING 41B marking code 41b
    Text: -7^33-0^ LTE21009R LT E 21009R A ,{ PHILIPS INTERNATIONAL StE D • 7110fi2b 0041,218 Rbfl ■ PHIN MICROWAVE LINEAR POWER TRANSISTOR NPN silicon transistor fo r use in common-emitter class-A linear power amplifiers up to 4.2 GHz. Diffused em itter ballasting resistors, self-aligned process entirely ion implanted and gold sandwich


    OCR Scan     		PDF LTE21009R LTE21009RA 711002b FO-41B) LTE21009RA A83A marking 113A db 435A 95A 640 marking 113a transistor 81 110 w 85 MARKING 41B marking code 41b

    MRF227

    Abstract: MRF227 equivalent 420 NPN Silicon RF Transistor transistor 7905 J 420 G
    Text: MOTOROLA SC XSTRS/R F 4bE D b3b72S4 0£m 50fl 7 MOTOROLA SEM ICO NDUCTOR TECHNICAL DATA MRF227 The RF Line 3 W - 225 MHz R F POWER TRANSISTOR NPN SILIC ON NPN SILICON RF POWER TRANSISTOR . . . designed for 12.5 Volt large-signal power amplifier applica­


    OCR Scan     		PDF b3b72S4 MRF227 T0-206A O-391 MRF227 MRF227 equivalent 420 NPN Silicon RF Transistor transistor 7905 J 420 G

    LS 2027 audio amp

    Abstract: ECG transistor replacement guide book free 2sb337 TRANSISTOR REPLACEMENT GUIDE 980510 S9510 2sb508 C24850772 2N339 bc149c
    Text: TABLE OF CONTENTS Introduction. Page 2 How to Use This Book. Page 2 Care and Handling of T ran sisto rs. Page 3


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    BFR94

    Abstract: Ferroxcube cross reference BFQ34 Ferroxcube core BFR94A f2nd transistor 3305
    Text: N AMER PHILIPS/DISCRETE 2SE D BFQ34 is recommended for new design • bbS3T31 DOlflOTS h U 11 BFR94 T -3 3 -0 S " N-P-N H.F. WIDEBAND TRANSISTOR N-P-N resistance-stabilized transistor in a SOT-48 capstan envelope featuring extremely low cross modulation, intermodulation and second harmonic distortion. Thanks to its high transition frequency


    OCR Scan     		PDF bbS3T31 BFQ34 BFR94 T-33-Ã OT-48 VCE-20V BFR94 Ferroxcube cross reference Ferroxcube core BFR94A f2nd transistor 3305

    motorola 2198

    Abstract: No abstract text available
    Text: I MOT OR OL A SC XSTRS/R F 4bE D b3b?2SH □G'mSEG 7 «110Tb MOTOROLA • SEMICONDUCTOR T- 33-05 TECHNICAL DATA The RF Line NPN Silicon High Frequency Transistor 1C = 200 mA HIGH FREQUENCY TRAN SISTO R NPN SILICON . . d e sign e d for ultra-linear co m m u n ic a tio n s o r instrum entation applications. L o w n oise


    OCR Scan     		PDF 110Tb LT3014 H-121 motorola 2198

    OC1016

    Abstract: SFE 1730 LTE21025R LTE21050R
    Text: AMER P H I L I P S / D I S C R E T E Lb53T31 D D m ib3 T □ LE D D EV EL O P M EN T DATA LTE21025R T his data sheet contains advance information and r-3l-OiT specifications are subject to change w ithout notice. M IC R O W A V E LINEAR PO W ER T R A N SIST O R


    OCR Scan     		PDF Lb53T31 LTE21025R FO-41B) OC1016 SFE 1730 LTE21025R LTE21050R