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    TRANSISTOR J 108 Search Results

    TRANSISTOR J 108 Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR J 108 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IS955

    Abstract: marking Y24 2SA1461 2SC3734 marking 2 AW
    Text: NEC / ELECTRON DEVICE j SILICON TRANSISTOR / _ _ . _ . _ . 2SA1461 HIGH FREQUENCY AMPLIFIER AND SW ITCHING PNP SILICON EPITAXIAL TRANSISTOR M INI MOLD FEATURES PACKAGE DIMENSIONS in m illim eters • High Speed Switching: t stg = 110 ns 2.8 ± 0.2 • High Gain Bandwidth Product : f j = 5 1 0 M H z


    OCR Scan     		PDF 2SA1461 2SC3734 IS955 marking Y24 2SA1461 2SC3734 marking 2 AW

    2SD1312

    Abstract: w18 transistor
    Text: SEC j m ^ iv r x Silicon Transistor A 2SD1312 N PN X U =1 > b =7 > i> 7*9 NPN Silicon Epitaxial Transistor Audio Frequency Power Amplifier mm / P A C K A G E # * / FEATURES DIMENSIONS Unit : mm O ¿T — T ' -i 7Ì" 7 > 7 i^<7) K -7 j o / J ^ T 'P t o è <, B i t HE T- r o


    OCR Scan     		PDF 2SD1312 SB984Â PWS10 cycleg50 io--00 2SD1312 w18 transistor

    LT 5251

    Abstract: 2s87 a1t transistor TRANSISTOR A1t Y500200 t430 transistor transistor bc 541 5251 F ic T440 2SB564
    Text: SEC j Silicon Transistor 2SB564 P N P X t" 2 * -> 7 J U fi '> 'J □ > h =y > v 7- H PNP Silicon Epitaxial Transistor Audio Frequency Power Amplifier o { S M M n i± f m y ^ B / P A C K A G E D IM EN SIO N S * Unit : mm ¿ 7 - fc.y v t , 0 2 S D 4 7 1 1 ^ > 7 °') * >


    OCR Scan     		PDF 02SD4711 cycleS50% LT 5251 2s87 a1t transistor TRANSISTOR A1t Y500200 t430 transistor transistor bc 541 5251 F ic T440 2SB564

    SC2334

    Abstract: fls09 1444 G 92-0151 2SA1010
    Text: NEC j \ f x > i / < 7 - Silicon Power Transistor A 2 P N P I t°i'+S'T./UJKS«' U 3 > h v S A 1 1 ^ S i i S J a iS W B E x - f ' y f v iS t ffl PNP Silicon Epitaxial Transistor High Speed High Voltage Switching Industrial Use 2 S A 1010 i i g J t i S i t B E X ^


    OCR Scan     		PDF 2SA1010 SC2334 SC2334 fls09 1444 G 92-0151 2SA1010

    2sc2530

    Abstract: 2SA amplifier TRANSISTOR 2SC balast
    Text: F U J IT S U SliCON HIGH SPEED POWER TRANSISTORS 2SC 2530 September 1979 <<* SILICON NPN RING EMITTER TRANSISTOR RET The 2SC 2530 is a silicon NPN M.C.-Head am plifier use transistor fabricated w ith Fujitus's unique Ring Em itter Transistor (RET) technology. RET devices are


    OCR Scan     		PDF 2SC2530 2SC2530 T0-220 10OnA, 2SA amplifier TRANSISTOR 2SC balast

    Untitled

    Abstract: No abstract text available
    Text: F ~7 > V 7 s / I ransistors 2SD1562A 2SD1562A NPN y ' J 3 > h 7 > y * $ Freq. P ow er Amp. Epitaxial Planar NPN Silicon Transistor 1 IB ffT S 5 B V Ce o = 1 6 0 V ) o 2) ASCW/a I ' o 3} tT ^F r^j^ , 4) 2S B 1085A t 3 > 7 ' J f * 5 o • Features 1) High breakdown voltage:


    OCR Scan     		PDF 2SD1562A 2SB1085A

    UPA57C

    Abstract: PA57C 300B 4 npn transistor ic 14pin *PA57C upa57
    Text: NEC j b =7 > '> * 9 C om pound T ransistor //PA57C NPN X fc: ^ * * > 7 J it t e r lJ =1 y — ij > h > h =7 h =7 > *¿> 7*9 U>T LED, NPN Silicon Epitaxial Darlington Transistor Array LED, amp Driver ¿¿PA57CÜ, l t f - > h 9~> =J > h 7 > v X 9 b |J > F > l ' 7 > y X j ' T l / ' i


    OCR Scan     		PDF uPA57C PA57CÜ UPA57C PA57C 300B 4 npn transistor ic 14pin *PA57C upa57

    J6 transistor

    Abstract: 2SD1513 PA33 2sb1068 2sb10681
    Text: NEC j Silicon Transistor 2SD1513 NPNxfc NPN Silicon Epitaxial Transistor Audio Frequency Power Amplifier #* /FEA TUR ES *fffi£IU/PACKAGE DIMENSIONS o \&W±jzWimMM]cn> ^ — 9 — Y 7 4 7\ v v 4 -rm k7 U nit: mm j K K7-f 7"%f, & t i m h FEX l& = > u 7 ^ S & f t l l c l l t r f o


    OCR Scan     		PDF 2SD1513 2SB10681 PWS10 J6 transistor 2SD1513 PA33 2sb1068

    MPT100

    Abstract: No abstract text available
    Text: NEC j m * T / v rx Junction Field Effect Transistor A 2SK692 e c -r v k ° — m N-Channel Silicon Junction Field Effect Transistor ECM Impedance Converter n $ m m o g mi * o r - h i w s * mm V '. 4.0 ± 0.2 • v - x m z f j x - Y z «H&T-è E C M -f > &


    OCR Scan     		PDF

    transistor BFR91

    Abstract: BFR91 transistor CR NPN BFR91 philips
    Text: Philips Semiconductors Product specification '- P NPN 5 GHz wideband transistor PHILIPS INTERNATIONAL DESCRIPTION SbE J> PIN 7 711002b PINNING NPN transistor in a plastic SOT37 envelope primarily intended for use in RF amplifiers such as in aerial amplifiers, radar systems,


    OCR Scan     		PDF ON4186) BFQ23. 31-I7 BFR91 BFR91 DQ457Dfl transistor BFR91 transistor CR NPN BFR91 philips

    TRR25-10XX2

    Abstract: TRR 100-12xx2 transistor c282 trr 30-06xx2 TRANSISTOR BIPOLAIRE 75-10xx2 06XX2 50-10XX2 5012-X ISOLA DE 156
    Text: A S E A B R Oü JN /AB B □□40300 S.ENICOÎ' □□□□SOS Transistor-Module T R R . Transistor-Modules TRR. 2 Leistungstransistoren mit 2 Freilaufdioden 2 Power transistors with 2 free wheeling diodes 1 J V - 5 3 ' o I Transistor Type/Type ATRR ATRR


    OCR Scan     		PDF 25-10xx2 30-06xx2 50-06XX2 50-10xx2 50-12XX2 75-10x 200-10XX2 300-10xx2 10-04L5 TRR25-10XX2 TRR 100-12xx2 transistor c282 trr 30-06xx2 TRANSISTOR BIPOLAIRE 75-10xx2 06XX2 5012-X ISOLA DE 156

    Untitled

    Abstract: No abstract text available
    Text: • Philips Semiconductors bb53T31 0055155 757 H A P X N AUER PHILIPS/DISCRETE NPN 5 GHz wideband transistor DESCRIPTION Product specification b7E J> c BFR92 PINNING NPN transistor in a plastic SOT23 envelope primarily intended for use In RP wideband amplifiers and


    OCR Scan     		PDF bb53T31 BFR92 BFT92. bbS3131 00B5157 bS3T31 -------------BFR92

    marking E2

    Abstract: 2SA1226 1480A
    Text: NEC SILICON TRANSISTOR ELECTRON DEVICE 2SA1226 HIGH FREQUENCY AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR M IN I MOLD FEATURES PACKAGE DIMENSIONS in millimeters • High Gain Bandwidth product 2.8± 0.2 • Low Output Capacitance f j = 400 MHz TYP. C0b = 1.1 pF TYP.


    OCR Scan     		PDF 2SA1226 NECTOKJ22686 TC-1480A marking E2 2SA1226 1480A

    NEC .PA1400H

    Abstract: PA1400H PA1428H TYA 0298 13X26X4 NEC PA1400H uPA1428H 0CJA pa-1400 PA1400
    Text: NEC j tM'g- y<r7— C o m p o u n d P o w e r T ra n s is to r ¿¿PA 1428H mm i NPN Silicon Epitaxial Transistor Low Speed Switching Darlington Industrial Use 7"') > •9 • 9 J 7*y J 9 ■7 r 9 V TR • i ') ■ ECR^ ^ ^ 0 ¿ 'c 7 ) g x a ^ if ^ J-fff;:, y V J y[ K • i — 9 • 'J w — • 7


    OCR Scan     		PDF PA1428H 13X26X4 NEC .PA1400H PA1400H PA1428H TYA 0298 NEC PA1400H uPA1428H 0CJA pa-1400 PA1400

    274 transistor

    Abstract: No abstract text available
    Text: •99 FOX ELECTRONICS " P 5t -<*3 11E D | 3 7 0 1 W ODOOZSfl b J F1100T / TRANSISTOR CLOCK OSCILLATOR The FOX F1100T Clock Oscillators are Discrete Transistor Oscillators which are TTL Compatible and are low cost. Fox oscillators feature a high quality welded


    OCR Scan     		PDF 370112B F1100T/TRANSISTOR F1100T 274 transistor

    jft 1411

    Abstract: c947 100 N31 transistor mur 641 M 9619 2SK2109 transistor 9619 nec 7824 ki 30 if 35acr
    Text: K ^ > V J* # MOS Field Effect Transistor 2SK2109 MOS FET 5 £ X < m m 2S K 2 1 0 9 & N 3 1 * *;U « É M O S F E T ? * U , 5 hiz J: 6 ¡t& ÏE S b jF n Jfë fc X < -y ^ > moL :mm ? m T ? to 1.5 ±0.1 <D77 ? ? j . J L - $ m W t f P , D C /D C = ] > / * - £ £ £ i : : j l i S ' ? f o


    OCR Scan     		PDF 2SK2109 2SK2109 TC-7983A 484Sife jft 1411 c947 100 N31 transistor mur 641 M 9619 transistor 9619 nec 7824 ki 30 if 35acr

    2SA1462

    Abstract: JE 33 TRANSISTOR BO 346 J-10 T108 T460 3111R GM0B JE 800 transistor
    Text: NEC i m=ïTivfx A Silicon Transistor 2SA1462 P N P i b " ^ + '> 7 J U M '> ' n > b ^ > ' > * 9 PN P Silicon Epitaxial Transistor High Speed Switching ^ S / P A C K A G E D IM EN SIO N S #ë/FEA TU RES O X - í v f > / 'iÈ ÎÉ Â 'j iË ^ o Unit : mm) ton : 9.0 ns T Y P . , t stg : 16 ns T Y P . ,


    OCR Scan     		PDF 2SA1462 o2SC3735 2SA1462 JE 33 TRANSISTOR BO 346 J-10 T108 T460 3111R GM0B JE 800 transistor

    Untitled

    Abstract: No abstract text available
    Text: nu. . 0 . J Philips Semiconductors • ^53=131 0 0 2 ^ 2 3 21b « A P X " n AMER PHILIPS/DISCRETE NPN 7 GHz wideband transistor DESCRIPTION Product specification L7E T> BFG135 PINNING NPN silicon planar epitaxial transistor in a plastic SOT223 envelope, intended for wideband


    OCR Scan     		PDF BFG135 OT223

    300 volt 16 ampere transistor

    Abstract: powerex ks62
    Text: POldEREX INC =JñD D • 7ET4hai 00G2E03 m N ER EX ^ 1 KS621A40 Powerex, Inc., Mills Street, Youngwood, Pennsylvania 15697 412 925-7272 f Tentative Fast Switching Single Darlington Transistor Module 400 Amperes/125 Volts Description t<jTUNtC*A*U6 Powerex Fast Switching Single Transistor


    OCR Scan     		PDF 00G2E03 KS621A40 Amperes/125 KS621A40 KS621M0 300 volt 16 ampere transistor powerex ks62

    transistor P1P

    Abstract: BFR92 p1p transistor BFT92 Philips MBB BFR90 amplifier J31 transistor BFR90 code p1p
    Text: m P hilips S em iconductors bbS3T31 N AMER DD2S1S2 757 H I A P X PHILIPS/DISCRETE _ . ._. Product specifigatjon b7E J> NPN 5 GHz wideband transistor £ BFR92 PINNING DESCRIPTION NPN transistor in a plastic SOT23 envelope primarily Intended for use in RF wideband amplifiers and


    OCR Scan     		PDF bbS3T31 BFR92 BFT92. transistor P1P BFR92 p1p transistor BFT92 Philips MBB BFR90 amplifier J31 transistor BFR90 code p1p

    LP1983

    Abstract: motorola 039
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA LP1983 The RF Line NPN Silicon High-Frequency Transistor . . . designed primarily for use in high-gain, low-noise, small-signal amplifiers. lc = 30 mA HIGH-FREQUENCY TRANSISTOR NPN SILICON • High Current-Gain — Bandwidth Product — f j = 4.5 GHz Typ


    OCR Scan     		PDF LP1983 MRF901 Temperat13 IS22I LP1983 motorola 039

    2SC1009A

    Abstract: CIL 108
    Text: SILICON TRANSISTOR ELECTRON DEVICE 2SC1009A F M /A M RF AMPLIFIER, MIXER, OSCILLATOR, CONVERTER NPN SILICON EPITAXIAL TRANSISTOR M IN I MOLD FEATURES PACKAGE DIMENSIONS in millimeters • High Gain Bandwidth Product: f j = 250 MHz TYP. 2.8 ± 0.2 • Low Output Capacitance: CQb = 1.8 pF TYP.


    OCR Scan     		PDF 2SC1009A J22686 TC-1486A 2SC1009A CIL 108

    D1351

    Abstract: ELLS 110 2SA1458 U110 5925B
    Text: Silicon Transistor 2SA1458 P N P n L £ ? j r ' > 7 J U i & ' > ' z i > b :ÿ > i S Z > 9 m m p i g i l i ¿s j: z f * m # m x + » 0X4 o - y f > =r u 9 ï f â f n m i î & ' h S 0 3 1 / ^ : ? i i r ! l ; ô iV J ' ? v \, t 'o 02SC3731 t rJ>7°'J / 'y 9 UTÎÎfflT'ë i t o


    OCR Scan     		PDF 2SA1458 02SC3731 D13515JJ4V0DS00 TC-5925B) D1351 ELLS 110 2SA1458 U110 5925B

    transistor Common Base amplifier

    Abstract: TACAN TACAN transistor
    Text: S G S-^THOMSON □4C D | 7^2^537 000Q13Ô SOLID MICROWAVE SD1534 THOMSON-CSF COMPONENTS CORPORATION Montgomeryville, PA 18936 " 2 1 5 362-8500 PTWX 510-661-7299 J MICROWAVE POWER TRANSISTOR IFF, DME, TACAN DESCRIPTION The SSM SD1534 is a gold metalized, silicon NPN power transistor.


    OCR Scan     		PDF 000Q13Ô SD1534 SD1534 1025--1150MHz IFF/50 DME/50 TACAN/50V transistor Common Base amplifier TACAN TACAN transistor