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    TRANSISTOR IRF630 Search Results

    TRANSISTOR IRF630 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR IRF630 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    IRF630B

    Abstract: mosfet ac switch N-Channel MOSFET 200v n-channel mosfet transistor TRANSISTOR mosfet mosfet 45a 200v mosfet transistor
    Text: isc Product Specification INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF630B DESCRIPTION •Drain Current –ID= 9A@ TC=25℃ ·Drain Source Voltage: VDSS= 200V Min ·Static Drain-Source On-Resistance : RDS(on) = 0.4Ω(Max) ·Fast Switching Speed


    Original     		IRF630B IRF630B mosfet ac switch N-Channel MOSFET 200v n-channel mosfet transistor TRANSISTOR mosfet mosfet 45a 200v mosfet transistor PDF

    power relay N-channel mosfet

    Abstract: IRF630N N-Channel MOSFET 200v UPS RELAY CIRCUIT mosfet High-Speed Switching mosfet low idss n-channel mosfet transistor low power TRANSISTOR mosfet transistor irf630n mosfet low vgs
    Text: isc Product Specification INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF630N DESCRIPTION •Drain Current –ID=9.3A@ TC=25℃ ·Drain Source Voltage: VDSS= 200V Min ·Static Drain-Source On-Resistance : RDS(on) = 0.3Ω(Max) ·Fast Switching Speed


    Original     		IRF630N power relay N-channel mosfet IRF630N N-Channel MOSFET 200v UPS RELAY CIRCUIT mosfet High-Speed Switching mosfet low idss n-channel mosfet transistor low power TRANSISTOR mosfet transistor irf630n mosfet low vgs PDF

    irf630

    Abstract: irf630 smd transistor transistor IRF630 irf630s irf630 philips
    Text: Philips Semiconductors Product specification N-channel TrenchMOS transistor FEATURES IRF630, IRF630S SYMBOL QUICK REFERENCE DATA • ’Trench’ technology • Low on-state resistance • Fast switching • Low thermal resistance d VDSS = 200 V ID = 9 A


    Original     		IRF630, IRF630S IRF630 O220AB) IRF630S OT404 irf630 smd transistor transistor IRF630 irf630 philips PDF

    Untitled

    Abstract: No abstract text available
    Text: M OTOROLA SEMICONDUCTOR TECHNICAL DATA IRF630 Pow er Field E ffect Transistor N-Channel Enhancement-Mode Silicon Gate This TMOS Power FET is designed fo r low voltage, high speed power sw itching applications such as sw itching regulators, converters, solenoid


    OCR Scan     		IRF630 21A-06 O-220AB) b3b7254 PDF

    irf630

    Abstract: pin detail irf630 irf630 datasheet for IRF630 IRF630 Transistor
    Text: Continental Device India Limited An ISO/TS 16949 and ISO 9001 Certified Company N-CHANNEL ENHANCEMENT MODE FIELD EFFECT POWER TRANSISTOR IRF630 TO-220 Plastic Package High Switching Speed, Low Static Drain-Source On Resistance ABSOLUTE MAXIMUM RATINGS Ta=25oC unless specified otherwise


    Original     		IRF630 O-220 C-120 IRF630 060105D pin detail irf630 irf630 datasheet for IRF630 IRF630 Transistor PDF

    200v mosfet

    Abstract: n mosfet low vgs 200 A 200V mosfet irf630 equivalent low igss mosfet low vgs mosfet irf630 irf630 IRF630 mosfet irf630 datasheet
    Text: INCHANGE MOSFET IRF630 N-channel mosfet transistor ‹ Features 123 ・With TO-220 package ・Low on-state and thermal resistance ・Fast switching ・VDSS=200V; RDS ON ≤0.4Ω;ID=9A ・1.gate 2.drain 3.source ‹ Absolute Maximum Ratings Tc=25℃ SYMBOL PARAMETER


    Original     		IRF630 O-220 O-220 200v mosfet n mosfet low vgs 200 A 200V mosfet irf630 equivalent low igss mosfet low vgs mosfet irf630 irf630 IRF630 mosfet irf630 datasheet PDF

    low igss

    Abstract: TO-220f Package TRANSISTOR mosfet irf630f 200v mosfet mosfet NA n mosfet low vgs N-Channel MOSFET 200v mosfet low vgs
    Text: INCHANGE MOSFET IRF630F N-channel mosfet transistor ‹ Features ・With TO-220F package ・Low on-stateand thermal resistance ・Fast switching ・VDSS=200V; RDS ON ≤0.4Ω;ID=9A ・1.gate 2.drain 3.source 123 ‹ Absolute Maximum Ratings Tc=25℃ SYMBOL PARAMETER


    Original     		IRF630F O-220F O-220F low igss TO-220f Package TRANSISTOR mosfet irf630f 200v mosfet mosfet NA n mosfet low vgs N-Channel MOSFET 200v mosfet low vgs PDF

    Untitled

    Abstract: No abstract text available
    Text: <zz>£tni-C.onauctoi J loaucti, L/nc, LJ TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. N-Channel MOSFET Transistor IRF630 0(2) DESCRIPTION • Drain Current -ID=9A@ TC=25°C • Drain Source Voltage-


    Original     		IRF630 PDF

    Untitled

    Abstract: No abstract text available
    Text: ^>£.m.l-C.ond\jLC.toi LPioducti, TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. N-Channel MOSFET Transistor IRF630N 0(2) DESCRIPTION • Drain Current -ID=9.3A@ TC=25°C • Drain Source Voltage: VDSS= 200V(Min)


    Original     		IRF630N PDF

    IRF630

    Abstract: IRF630 MOTOR CONTROL CIRCUIT IRF630FI IRF630 p for IRF630
    Text: IRF630 IRF630FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR PRELIMINARY DATA TYPE IRF630 IRF630FI • ■ ■ ■ ■ VDSS R DS on ID 200 V 200 V < 0.4 Ω < 0.4 Ω 10 A 6A TYPICAL RDS(on) = 0.25 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED


    Original     		IRF630 IRF630FI 100oC O-220 ISOWATT220 IRF630 IRF630 MOTOR CONTROL CIRCUIT IRF630FI IRF630 p for IRF630 PDF

    IRF630 MOTOR CONTROL CIRCUIT

    Abstract: No abstract text available
    Text: IRF630 IRF630FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR PRELIMINARY DATA TYPE IRF630 IRF630FI • ■ ■ ■ ■ V DSS R DS on ID 200 V 200 V < 0.4 Ω < 0.4 Ω 10 A 6A TYPICAL RDS(on) = 0.25 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED


    Original     		IRF630 IRF630FI 100oC O-220 ISOWATT220 IRF630 MOTOR CONTROL CIRCUIT PDF

    Untitled

    Abstract: No abstract text available
    Text: ^s.nii-donaucto'L L/^ioaueti, One. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. N-Channel MOSFET Transistor IRF630B 0( 2) DESCRIPTION • Drain Current -ID= 9A@ TC=25°C • Drain Source Voltage: VDss= 200V(Min)


    Original     		IRF630B PDF

    SEC irf630

    Abstract: D84 TRANSISTOR irf630 D84DN2 Irf631 Switching N-Channel Power MOS FET 50a transistor irf630 IRF630 Transistor
    Text: IRF630,631 D84DN2.M2 lP MIfiiD !i£§ FIT FIELD EFFECT POWER TRANSISTOR 9.0 AMPERES S!00,150 VOLTS RDS(ON = 0-4 A This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged­


    OCR Scan     		IRF630 D84DN2 12-5n 00A//usec, SEC irf630 D84 TRANSISTOR Irf631 Switching N-Channel Power MOS FET 50a transistor irf630 IRF630 Transistor PDF

    ksd 302 250v, 10a

    Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
    Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle


    OCR Scan     		CB-F36c 2SD1642 2SD2182, 2SC4489, -08S- ksd 302 250v, 10a irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643 PDF

    IRF630

    Abstract: IRF630 MOTOR CONTROL CIRCUIT irf630 n channel transistor IRF630
    Text: ¿57 S G S -T H O M S O N ¡m e ra « IR F 6 3 0 IR F 6 3 0 FI N - CHANNEL ENHANCEMENT MODE _ POWER MOS TRANSISTOR PRELIMINARY DATA TYP E IRF630 IRF630FI V dss RDS on Id 200 V 200 V < 0.4 a < 0.4 a 10 A 6 A . TYPICAL RDS(on) = 0.25 Q. AVALANCHE RUGGED TECHNOLOGY


    OCR Scan     		IRF630 IRF630FI IRF630/FI ISOWATT22Q IRF630 MOTOR CONTROL CIRCUIT irf630 n channel transistor IRF630 PDF

    rf630

    Abstract: IRF630 MOTOR CONTROL CIRCUIT
    Text: *57 S G S -T H O M S O N IR F 630 ilLHCTIKMDe IRF630FI N - CHANNEL ENHANCEMENT MODE _ POWER MQS TRANSISTOR PR EL IM IN A R Y D A T A T YPE IRF630 IRF630FI • . . ■ ■ V dss R DS on Id 200 V 200 V < 0.4 a < o.4 a 10 A 6 A TYPICAL RDS(on) = 0.25 Q


    OCR Scan     		IRF630FI IRF630 rf630 IRF630 MOTOR CONTROL CIRCUIT PDF

    cp4071

    Abstract: data sheet IC 7408 2N4891 IC 7408 MDA970A2 MDA2500 1854-0071 MDA2502 2N4342 IC TTL 7400
    Text: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154


    Original     		68B09 SN74ALS04BN SN74ALS08N SN74ALS00AN CA3046 uA733 LM311P LM318 CA3094 78H05 cp4071 data sheet IC 7408 2N4891 IC 7408 MDA970A2 MDA2500 1854-0071 MDA2502 2N4342 IC TTL 7400 PDF

    c5088 transistor

    Abstract: transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N
    Text: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154


    Original     		1853IMPATT c5088 transistor transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N PDF

    SEC irf630

    Abstract: No abstract text available
    Text: J.E.IIS.U ^E.ml-L.onaucko'i , One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 U.S.A. IRF630,631 D84DN2,M2 9.0 AMPERES 200,150 VOLTS "DS(ON) = 0.4 n N-CHANNEL [RUT CASE STYLE TO-220AB DIMENSIONS ARE IN INCHES AND (MILLIMETERS)


    Original     		IRF630 D84DN2 O-220AB 100ms IRF630/D84DN2 IRF631/D84DM2-^ SEC irf630 PDF

    Q2N4401

    Abstract: D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751
    Text: Analog Parts Index Digital Mixed-Signal Device Type Index Click on a device type to jump to its page Actuator Fluid Level Detector Operational Amplifier Small-Signal Mosfet Amplifier/Equilizer Ground Fault Interrupter Opto-Isolator Switch Mulitplier Analog


    Original     		RD91EB Q2N4401 D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751 PDF

    4311 mosfet transistor

    Abstract: D 4206 TRANSISTOR transistor D 322 Power MOSFETs D 843 Transistor Transistor irf230 h a 431 transistor MOSFET IRF460 n-channel 4336 742r
    Text: - POWER MOSFETs 4 N-CHANNEL POWER MOSFETs PAGE 2N6755, 2N6756 N-Channel Enhancement-Mode Power Field-Effect Transistors. 2N6757, 2N6758 N-Channel Enhancement-Mode Power Field-Effect Transistors. 4-11 2N6759, 2N6760


    OCR Scan     		2N6755, 2N6756 2N6757, 2N6758 2N6759, 2N6760 2N6761, 2N6762 2N6763, 2N6764 4311 mosfet transistor D 4206 TRANSISTOR transistor D 322 Power MOSFETs D 843 Transistor Transistor irf230 h a 431 transistor MOSFET IRF460 n-channel 4336 742r PDF

    OF4455

    Abstract: OT239 philips AS2000P triac ot239 phx4nq60e of4453 TDA8855H OF4455 diode OF4453 diode AS2000P
    Text: Philips Semiconductors Product Discontinuation Notice DN53 Exhibit A June 30, 2004 SEE DN53 NOTICE LETTER FOR APPLICABLE LAST TIME BUY TERMS, CONDITIONS AND CODE DEFINITIONS FOR THESE DISCONTINUED PRODUCTS. REFER TO PHILIPS WEB-SITE "http://www.semiconductors.philips.com/eol FOR ADDED INFORMATION.


    Original     		Code357A3 30-Jun-04 VY27357A3 OF4455 OT239 philips AS2000P triac ot239 phx4nq60e of4453 TDA8855H OF4455 diode OF4453 diode AS2000P PDF

    BC548 TRANSISTOR REPLACEMENT

    Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
    Text: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction


    Original     		BAP1321-02 BAP65-05 BAP65-03 BAP65-05W BAP65-02 BAP63-03 BAP63-02 BAP64-03 BAP64-02 BB143 BC548 TRANSISTOR REPLACEMENT TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587 PDF

    12V to 300V dc dc converter step-up

    Abstract: BL3208 BL35P12 12v 10A dc driver motor control mosfet 400V to 6V DC Regulator TO 220 Package BL0306 DC DC converter 1A 400V TO 220 Package cm8001 BL3207 BL8530
    Text: Products Selection Guide www.belling.com.cn Index of Part Number 型号索引 Control & Driver 驱动控制类 Counter, CD/DVD, Relay, Stepped motor, Brushless motor, etc（机电驱动） LCD display driver（液晶显示驱动） Digital Appliances 数字家电类


    Original     		TPA6211 BL6203 TPA6203 BL6204 TPA6204 BL6212 LM4990 BL6217 HDIP18 TDA1517 12V to 300V dc dc converter step-up BL3208 BL35P12 12v 10A dc driver motor control mosfet 400V to 6V DC Regulator TO 220 Package BL0306 DC DC converter 1A 400V TO 220 Package cm8001 BL3207 BL8530 PDF