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    TRANSISTOR HI POWER PWM Search Results

    TRANSISTOR HI POWER PWM Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPD4207F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4204F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4162F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4206F Toshiba Electronic Devices & Storage Corporation Intelligent power device 500V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR HI POWER PWM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    E 13007

    Abstract: E13007 mj 13007 transistor MJ 13007 sec 13007 transistor E 13007 transistor E 13007-c transistor m 13007 transistor d 13007 13007 applications
    Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE200207 Issued Date : 1993.04.12 Revised Date : 2002.08.14 Page No. : 1/4 HMJE13007 NPN EPITAXIAL PLANAR TRANSISTOR Description • High Voltage, High Speed Power Switch • Switch Regulators • PWM Inverters and Motor Controls


    Original     		PDF HE200207 HMJE13007 O-220 E 13007 E13007 mj 13007 transistor MJ 13007 sec 13007 transistor E 13007 transistor E 13007-c transistor m 13007 transistor d 13007 13007 applications

    TRANSISTOR 13007a

    Abstract: 13007A E13007A 13007a power transistor HMJE13007A
    Text: HI-SINCERITY Spec. No. : HE200501 Issued Date : 2005.06.01 Revised Date : 2006.07.04 Page No. : 1/5 MICROELECTRONICS CORP. HMJE13007A NPN EPITAXIAL PLANAR TRANSISTOR Description • High Voltage, High Speed Power Switch • Switch Regulators • PWM Inverters and Motor Controls


    Original     		PDF HE200501 HMJE13007A O-220 183oC 217oC 260oC 10sec TRANSISTOR 13007a 13007A E13007A 13007a power transistor HMJE13007A

    HMJE13003

    Abstract: No abstract text available
    Text: HI-SINCERITY Spec. No. : HT200210 Issued Date : 2001.01.01 Revised Date : 2009.04.17 Page No. : 1/5 MICROELECTRONICS CORP. HMJE13003 NPN EPITAXIAL PLANAR TRANSISTOR Description • High Voltage, High Speed Power Switch • Switch Regulators • PWM Inverters and Motor Controls


    Original     		PDF HT200210 HMJE13003 O-126 Dis120 183oC 217oC 260oC 10sec HMJE13003

    E13003

    Abstract: HMJE13003 MJE130
    Text: HI-SINCERITY Spec. No. : HT200210 Issued Date : 2001.01.01 Revised Date : 2006.10.26 Page No. : 1/5 MICROELECTRONICS CORP. HMJE13003 NPN EPITAXIAL PLANAR TRANSISTOR Description • High Voltage, High Speed Power Switch • Switch Regulators • PWM Inverters and Motor Controls


    Original     		PDF HT200210 HMJE13003 O-126 Dis120 183oC 217oC 260oC 10sec E13003 HMJE13003 MJE130

    TO126ML

    Abstract: HD200207 HMJE13003D
    Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HD200207 Issued Date : 1993.04.12 Revised Date : 2002.05.08 Page No. : 1/4 HMJE13003D NPN EPITAXIAL PLANAR TRANSISTOR Description • High Voltage, High Speed Power Switch • Switch Regulators • PWM Inverters and Motor Controls


    Original     		PDF HD200207 HMJE13003D O-126ML TO126ML HD200207 HMJE13003D

    TRANSISTOR 13007a

    Abstract: 13007A E13007A 13007a power transistor HMJE13007A MJ 13007A
    Text: HI-SINCERITY Spec. No. : HE200501 Issued Date : 2005.06.01 Revised Date : 2005.06.29 Page No. : 1/5 MICROELECTRONICS CORP. HMJE13007A NPN EPITAXIAL PLANAR TRANSISTOR Description • High Voltage, High Speed Power Switch • Switch Regulators • PWM Inverters and Motor Controls


    Original     		PDF HE200501 HMJE13007A O-220 Di120 183oC 217oC 260oC TRANSISTOR 13007a 13007A E13007A 13007a power transistor HMJE13007A MJ 13007A

    HLB123SA

    Abstract: 2006-1201 IC DATE CODE
    Text: HI-SINCERITY Spec. No. : HA200601 Issued Date : 2006.12.01 Revised Date : 2009.07,02 Page No. : 1/6 MICROELECTRONICS CORP. HLB123SA NPN EPITAXIAL PLANAR TRANSISTOR Description • High Voltage, High Speed Power Switch • Switch Regulators • PWM Inverters and Motor Controls


    Original     		PDF HA200601 HLB123SA 217oC 260oC 10sec HLB123SA 2006-1201 IC DATE CODE

    transistor 7830

    Abstract: IC 7830 HMJE13003 tl 7400 IC 7430
    Text: HI-SINCERITY Spec. No. : HT200210 Issued Date : 2001.01.01 Revised Date : 2010.03.16 Page No. : 1/6 MICROELECTRONICS CORP. HMJE13003 NPN EPITAXIAL PLANAR TRANSISTOR Description • High Voltage, High Speed Power Switch • Switch Regulators • PWM Inverters and Motor Controls


    Original     		PDF HT200210 HMJE13003 O-126 Dis120 183oC 217oC 260oC 10sec transistor 7830 IC 7830 HMJE13003 tl 7400 IC 7430

    TRANSISTOR 13007a

    Abstract: 13007A HMJE13007A
    Text: HI-SINCERITY Spec. No. : HE200501 Issued Date : 2005.06.01 Revised Date : 2007.03.06 Page No. : 1/5 MICROELECTRONICS CORP. HMJE13007A NPN EPITAXIAL PLANAR TRANSISTOR Description • High Voltage, High Speed Power Switch • Switch Regulators • PWM Inverters and Motor Controls


    Original     		PDF HE200501 HMJE13007A O-220 10sec TRANSISTOR 13007a 13007A HMJE13007A

    sec 13007

    Abstract: E 13007 sec E 13007 SEC E 13007 - 2 e13007 mj 13007 transistor MJ 13007 transistor E 13007-c j 13007 HE200207
    Text: HI-SINCERITY Spec. No. : HE200207 Issued Date : 1993.04.12 Revised Date : 2007.03.06 Page No. : 1/5 MICROELECTRONICS CORP. HMJE13007 NPN EPITAXIAL PLANAR TRANSISTOR Description • High Voltage, High Speed Power Switch • Switch Regulators • PWM Inverters and Motor Controls


    Original     		PDF HE200207 HMJE13007 O-220 10sec sec 13007 E 13007 sec E 13007 SEC E 13007 - 2 e13007 mj 13007 transistor MJ 13007 transistor E 13007-c j 13007 HE200207

    mj 13003

    Abstract: transistor MJ 13003 E13003 E13003E Transistor C G 774 6-1 HMJE13003D HD200207 13003e E 13003 HMJE13003D Datasheet
    Text: HI-SINCERITY Spec. No. : HD200207 Issued Date : 1993.04.12 Revised Date : 2007.09.04 Page No. : 1/5 MICROELECTRONICS CORP. HMJE13003D NPN EPITAXIAL PLANAR TRANSISTOR Description • High Voltage, High Speed Power Switch • Switch Regulators • PWM Inverters and Motor Controls


    Original     		PDF HD200207 HMJE13003D O-126ML 10sec mj 13003 transistor MJ 13003 E13003 E13003E Transistor C G 774 6-1 HMJE13003D HD200207 13003e E 13003 HMJE13003D Datasheet

    mj 13003

    Abstract: transistor MJ 13003 13003CD E13003 13003c E13003C E 13003 TRANSISTOR 13003 transistor HMJE13003E transistor 13003
    Text: HI-SINCERITY Spec. No. : HE200502 Issued Date : 2005.10.01 Revised Date : 2009.10.14 Page No. : 1/4 MICROELECTRONICS CORP. HMJE13003E NPN Epitaxial Planar Transistor Description • High Voltage, High Speed Power Switch • Switch Regulators • PWM Inverters and Motor Controls


    Original     		PDF HE200502 HMJE13003E O-220 Di120 183oC 217oC 260oC mj 13003 transistor MJ 13003 13003CD E13003 13003c E13003C E 13003 TRANSISTOR 13003 transistor HMJE13003E transistor 13003

    HLB123

    Abstract: HLB123SA IC DATE CODE ha2006
    Text: HI-SINCERITY Spec. No. : HA200601 Issued Date : 2006.12.01 Revised Date : 2009.04,02 Page No. : 1/5 MICROELECTRONICS CORP. HLB123SA NPN EPITAXIAL PLANAR TRANSISTOR Description • High Voltage, High Speed Power Switch • Switch Regulators • PWM Inverters and Motor Controls


    Original     		PDF HA200601 HLB123SA 217oC 260oC 10sec HLB123 HLB123SA IC DATE CODE ha2006

    Untitled

    Abstract: No abstract text available
    Text: HI-SINCERITY Spec. No. : HT200210 Issued Date : 2001.01.01 Revised Date : 2009.04.17 Page No. : 1/5 MICROELECTRONICS CORP. HMJE13003 NPN EPITAXIAL PLANAR TRANSISTOR Description • High Voltage, High Speed Power Switch • Switch Regulators • PWM Inverters and Motor Controls


    Original     		PDF HT200210 HMJE13003 O-126 183oC 217oC 260oC 10sec

    HMJE13003

    Abstract: No abstract text available
    Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HT200210 Issued Date : 2001.01.01 Revised Date : 2002.05.08 Page No. : 1/3 HMJE13003 NPN EPITAXIAL PLANAR TRANSISTOR Description • High Voltage, High Speed Power Switch • Switch Regulators • PWM Inverters and Motor Controls


    Original     		PDF HT200210 HMJE13003 O-126 HMJE13003

    E 13007

    Abstract: transistor MJ 13007 E13007 mj 13007 sec 13007 transistor E 13007-c sec E 13007 D 13007 K transistor transistor E 13007 transistor d 13007
    Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE200207 Issued Date : 1993.04.12 Revised Date : 2003.07.21 Page No. : 1/4 HMJE13007 NPN EPITAXIAL PLANAR TRANSISTOR Description • High Voltage, High Speed Power Switch • Switch Regulators • PWM Inverters and Motor Controls


    Original     		PDF HE200207 HMJE13007 O-220 E 13007 transistor MJ 13007 E13007 mj 13007 sec 13007 transistor E 13007-c sec E 13007 D 13007 K transistor transistor E 13007 transistor d 13007

    h07n65

    Abstract: No abstract text available
    Text: HI-SINCERITY Spec. No. : MOS200801 Issued Date : 2008.07.22 Revised Date : 2009.0514 Page No. : 1/6 MICROELECTRONICS CORP. H07N65 Series H07N65 Series Pin Assignment Tab N-Channel Power Field Effect Transistor 3-Lead Plastic TO-220AB Package Code: E Pin 1: Gate


    Original     		PDF MOS200801 H07N65 O-220AB 183oC 217oC 260oC 10sec H07N65E,

    03n60

    Abstract: H03N60 H03N60E H03N60F transistor 100A 3N60
    Text: HI-SINCERITY Spec. No. : MOS200602 Issued Date : 2006.02.01 Revised Date : 2006.02.07 Page No. : 1/5 MICROELECTRONICS CORP. H03N60 Series H03N60 Series Pin Assignment Tab N-Channel Power Field Effect Transistor 3-Lead Plastic TO-220AB Package Code: E Pin 1: Gate


    Original     		PDF MOS200602 H03N60 O-220AB 200oC 183oC 217oC 260oC 245oC 10sec 03n60 H03N60E H03N60F transistor 100A 3N60

    *07n60

    Abstract: mosfet 600v 10a to-220ab H07N60 H07N60E H07N60F marking code diode 648
    Text: HI-SINCERITY Spec. No. : MOS200604 Issued Date : 2006.02.01 Revised Date : 2006.02.07 Page No. : 1/5 MICROELECTRONICS CORP. H07N60 Series H07N60 Series Pin Assignment Tab N-Channel Power Field Effect Transistor 3-Lead Plastic TO-220AB Package Code: E Pin 1: Gate


    Original     		PDF MOS200604 H07N60 O-220AB 183oC 217oC 260oC 10sec H07N60E, *07n60 mosfet 600v 10a to-220ab H07N60E H07N60F marking code diode 648

    7n6 TRANSISTOR

    Abstract: Marking 7n6 TRANSISTOR transistor 7n6 07n60 Marking 7n6 Mosfet 7n6 diode H07N60 H07N60E H07N60F marking code PB
    Text: HI-SINCERITY Spec. No. : MOS200604 Issued Date : 2006.02.01 Revised Date : 2006.02.07 Page No. : 1/5 MICROELECTRONICS CORP. H07N60 Series H07N60 Series Pin Assignment Tab N-Channel Power Field Effect Transistor 3-Lead Plastic TO-220AB Package Code: E Pin 1: Gate


    Original     		PDF MOS200604 H07N60 O-220AB 183oC 217oC 260oC 10sec H07N60E, 7n6 TRANSISTOR Marking 7n6 TRANSISTOR transistor 7n6 07n60 Marking 7n6 Mosfet 7n6 diode H07N60E H07N60F marking code PB

    MOSFET MARK y2

    Abstract: mosfet k 61 y1 mosfet y1 MOSFET MARK H1 marking code k1 marking y1 H01N60I marking A1 TRANSISTOR PB40 H01N60
    Text: HI-SINCERITY Spec. No. : MOS200502 Issued Date : 2005.03.01 Revised Date : 2006.08.31 Page No. : 1/5 MICROELECTRONICS CORP. H01N60 Series H01N60 Series Pin Assignment N-Channel Power Field Effect Transistor Tab Description 1 This high voltage MOSFET uses an advanced termination scheme to


    Original     		PDF MOS200502 H01N60 200oC 183oC 217oC 260oC 245oC 10sec MOSFET MARK y2 mosfet k 61 y1 mosfet y1 MOSFET MARK H1 marking code k1 marking y1 H01N60I marking A1 TRANSISTOR PB40

    MOSFET MARK y2

    Abstract: H01N60S H01N60SI H01N60SJ MOSFET MARK H1 mosfet y1
    Text: HI-SINCERITY Spec. No. : MOS200501 Issued Date : 2005.01.01 Revised Date : 2005.09.28 Page No. : 1/5 MICROELECTRONICS CORP. H01N60S Series N-Channel Power Field Effect Transistor H01N60S Series Pin Assignment Tab Description 1 This high voltage MOSFET uses an advanced termination scheme to


    Original     		PDF MOS200501 H01N60S 200oC 183oC 217oC 260oC 245oC H01N60SI, H01N60SJ MOSFET MARK y2 H01N60SI H01N60SJ MOSFET MARK H1 mosfet y1

    transistor 2sc5353

    Abstract: 2sa2035 TRANSISTOR SMD 13W HA2003 Bjt 60 w 600v .5A pnp transistor 800v TPC6D02 VS6 SOT23 400V dvc to 5V DC Regulator MSTM TOSHIBA
    Text: Bipolar Power Transistor Dec, 2003 TOSHIBA Semiconductor Company Discrete Semiconductor Division 2003 Dec DP0540001_02 1/29 Application Application Map Map of of Low Low VCE sat VCE(sat) BJT BJT Process Standard Standard Feature High hFE Hi-Met 3rd NPN 400 to 1000


    Original     		PDF DP0540001 200kHz 200kHz 280ns transistor 2sc5353 2sa2035 TRANSISTOR SMD 13W HA2003 Bjt 60 w 600v .5A pnp transistor 800v TPC6D02 VS6 SOT23 400V dvc to 5V DC Regulator MSTM TOSHIBA

    MOSFET MARK y2

    Abstract: MOSFET MARK H1 marking code k1 H01N60S marking A1 TRANSISTOR marking y1 mosfet k 61 y1 mosfet y1 PB40 H01N60SI
    Text: HI-SINCERITY Spec. No. : MOS200501 Issued Date : 2005.01.01 Revised Date : 2006.08.31 Page No. : 1/5 MICROELECTRONICS CORP. H01N60S Series N-Channel Power Field Effect Transistor H01N60S Series Pin Assignment Tab Description 1 This high voltage MOSFET uses an advanced termination scheme to


    Original     		PDF MOS200501 H01N60S 200oC 183oC 217oC 260oC 245oC 10sec MOSFET MARK y2 MOSFET MARK H1 marking code k1 marking A1 TRANSISTOR marking y1 mosfet k 61 y1 mosfet y1 PB40 H01N60SI