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Infineon Technologies AG SPD07N60C3ATMA1 LOW POWER_LEGACY
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SPD07N60C3ATMA1	Digi-Reel	4,303		1	1 $3.17 10 $2.063 100 $3.17 1000 $1.07698 10000 $1.07698	Buy Now
	SPD07N60C3ATMA1	Cut Tape	4,303		1	1 $3.17 10 $2.063 100 $3.17 1000 $1.07698 10000 $1.07698	Buy Now
	SPD07N60C3ATMA1	Reel	2,500		2,500	1 - 10 - 100 - 1000 - 10000 $1.02925	Buy Now
Avnet Americas	SPD07N60C3ATMA1	Reel	22,500	15 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 $0.60075	Buy Now
Mouser Electronics	SPD07N60C3ATMA1		5,768			1 $2.55 10 $1.76 100 $1.32 1000 $1.07 10000 $1.02	Buy Now
Newark	SPD07N60C3ATMA1	Cut Tape	862		1	1 $2.56 10 $1.81 100 $1.35 1000 $1.1 10000 $1.1	Buy Now
EBV Elektronik	SPD07N60C3ATMA1			16 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Infineon Technologies AG SPA07N60C3XKSA1 MOSFET N-CH 650V 7.3A TO220-FP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SPA07N60C3XKSA1	Tube	461		1	1 $3.08 10 $3.08 100 $3.08 1000 $1.0426 10000 $0.991	Buy Now
Newark	SPA07N60C3XKSA1	Bulk	530		1	1 $2.45 10 $2.04 100 $1.62 1000 $1.16 10000 $1.06	Buy Now
Rochester Electronics	SPA07N60C3XKSA1		100		1	1 $1.05 10 $1.05 100 $0.987 1000 $0.8925 10000 $0.8925	Buy Now
Chip One Stop	SPA07N60C3XKSA1	Tube	5,988			1 $2.05 10 $1.12 100 $0.886 1000 $0.746 10000 $0.713	Buy Now
EBV Elektronik	SPA07N60C3XKSA1			16 Weeks	500	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Infineon Technologies AG SPP07N60C3XKSA1 MOSFET N-CH 650V 7.3A TO220-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SPP07N60C3XKSA1	Tube	209		1	1 $3.27 10 $3.27 100 $3.27 1000 $1.11736 10000 $1.07438	Buy Now
Mouser Electronics	SPP07N60C3XKSA1		896			1 $2.88 10 $1.35 100 $1.28 1000 $1.07 10000 $1.05	Buy Now
Newark	SPP07N60C3XKSA1	Bulk	1,636		1	1 $2.81 10 $1.4 100 $1.32 1000 $1.1 10000 $1.09	Buy Now
Rochester Electronics	SPP07N60C3XKSA1		36		1	1 $1.13 10 $1.13 100 $1.06 1000 $0.9605 10000 $0.9605	Buy Now
EBV Elektronik	SPP07N60C3XKSA1			16 Weeks	500	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Infineon Technologies AG SPU07N60S5 MOSFET N-CH 600V 7.3A TO251-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SPU07N60S5	Tube			1,500	1 - 10 - 100 - 1000 - 10000 $0.84269	Buy Now
Infineon Technologies AG SPD07N60S5 MOSFET N-CH 600V 7.3A TO252-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SPD07N60S5	Reel			2,500	1 - 10 - 100 - 1000 - 10000 $0.75225	Buy Now
ComSIT USA	SPD07N60S5		37			1 - 10 - 100 - 1000 - 10000 -	Get Quote

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07N60 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
07N60S5 Abstract: P-TO251-3-1 P-TO252 SPD07N60S5 SPU07N60S5 Text: 07N60S5 07N60S5 D,2 Cool MOS Power-Transistor • New revolutionary high voltage technology · Worldwide best RDS on in TO-251 and TO-252 · Ultra low gate charge · Periodic avalanche rated · Extreme dv/dt rated · Optimized capacitances · Improved noise immunity	Original	SPU07N60S5 SPD07N60S5 O-251 O-252 SPUx3N60S5/SPDx3N60S5 SPU07N60S5 P-TO251-3-1 07N60S5 Q67040-S4196 07N60S5 P-TO251-3-1 P-TO252 SPD07N60S5	PDF
07N60 Abstract: 07N60C3 Text: Final data 07N60C3, 07N60C3 07N60C3, 07N60C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary VDS @ Tjmax 650 V • Ultra low gate charge RDS on 0.6 Ω ID 7.3 A • Periodic avalanche rated • Extreme dv/dt rated	Original	SPP07N60C3, SPB07N60C3 SPI07N60C3, SPA07N60C3 P-TO220-3-31 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 SPP07N60C3 07N60 07N60C3	PDF
07n60c2 Abstract: TRANSISTOR SMD MARKING CODE 12w smd transistor marking 12W transistor SMD 12W smd transistor 12W 98 smd transistor code 12w 07N60C2 equivalent P-TO252 SDP06S60 SPD07N60C2 Text: 07N60C2 07N60C2 Preliminary data Cool MOS Power Transistor COOLMOS Power Semiconductors Feature • New revolutionary high voltage technology · Worldwide best RDS on in TO-251 and TO-252 · Product Summary VDS 600 V Ultra low gate charge R DS(on)	Original	SPD07N60C2 SPU07N60C2 O-251 O-252 P-TO251 P-TO252 Q67040-S4312 07N60C2 07n60c2 TRANSISTOR SMD MARKING CODE 12w smd transistor marking 12W transistor SMD 12W smd transistor 12W 98 smd transistor code 12w 07N60C2 equivalent P-TO252 SDP06S60 SPD07N60C2	PDF
07N60C2 Abstract: s4309 SPA07N60C2 SPB07N60C2 SPP07N60C2 Q67040-S4310 TRANSISTOR SMD MARKING CODE GFs 07n60c Text: Final data 07N60C2, 07N60C2 07N60C2 Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary VDS @ Tjmax 650 V • Ultra low gate charge R DS on 0.6 Ω • Periodic avalanche rated ID 7.3 A • Extreme dv/dt rated	Original	SPP07N60C2, SPB07N60C2 SPA07N60C2 P-TO220-3-31 P-TO263-3-2 P-TO220-3-1 SPP07N60C2 Q67040-S4309 07N60C2 s4309 SPA07N60C2 SPB07N60C2 SPP07N60C2 Q67040-S4310 TRANSISTOR SMD MARKING CODE GFs 07n60c	PDF
smd TRANSISTOR sot-23 a7 Abstract: 07N60 200w power amplifier PCB layout 230 AC to 5V smps ic 3525 bc817 optocoupler TDA 6275 TDA 200W 07n60 mosfet circuit diagrams TDA 4100 tda168886 Text: Version 1.0 , September 2004 Application Note AN-CoolMOS-09 200W SMPS Demonstration Board II Author: Marko Scherf, Wolfgang Frank Published by Infineon Technologies AG http://www.infineon.com Power Conversion N e v e r s t o p t h i n k i n g 200W SMPS Demonstration Board II	Original	AN-CoolMOS-09 TDA16888, 1X20/90I smd TRANSISTOR sot-23 a7 07N60 200w power amplifier PCB layout 230 AC to 5V smps ic 3525 bc817 optocoupler TDA 6275 TDA 200W 07n60 mosfet circuit diagrams TDA 4100 tda168886	PDF
07N60C3 Abstract: No abstract text available Text: Preliminary data 07N60C3, 07N60C3 07N60C3 Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax 650 V •=Periodic avalanche rated RDS on	Original	SPP07N60C3, SPB07N60C3 SPI07N60C3 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 SPP07N60C3 Q67040-S4422 07N60C3 07N60C3	PDF
Untitled Abstract: No abstract text available Text: 07N60S5 07N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO-251 and TO-252 VDS 600 V RDS(on) 0.6 Ω ID 7.3 A PG-TO252. • Ultra low gate charge • Periodic avalanche rated PG-TO251.	Original	SPU07N60S5 SPD07N60S5 O-251 O-252 PG-TO252. PG-TO251. SPD07N60S5	PDF
07N60S5 Abstract: No abstract text available Text: 07N60S5 07N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO 220 VDS 600 V RDS(on) 0.6 Ω ID 7.3 A PG-TO262-3 • Ultra low gate charge PG-TO220-3-1 • Periodic avalanche rated	Original	SPP07N60S5 SPI07N60S5 P-TO220-3-1 PG-TO262-3 PG-TO220-3-1 SPI07N60S5 PG-TO220-3-1 Q67040-S4172 PG-TO262-3 07N60S5	PDF
smd diode marking G12 Abstract: SPA07N60C3 Text: 07N60C3 07N60C3, 07N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.6 Ω ID 7.3 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220-3-31 PG-TO262-3 PG-TO220 • Extreme dv/dt rated	Original	SPP07N60C3 SPI07N60C3, SPA07N60C3 P-TO220-3-31 PG-TO220-3-31 PG-TO262-3 PG-TO220 P-TO220-3-1 PG-TO-220-3-31: SPP07N60C3 smd diode marking G12	PDF
smd marking g12 Abstract: No abstract text available Text: 07N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.6 Ω ID 7.3 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO263-3-2 • Extreme dv/dt rated • High peak current capability	Original	SPB07N60C3 P-TO263-3-2 07N60C3 SPB07N60C3 Q67040-S4394 smd marking g12	PDF
Untitled Abstract: No abstract text available Text: 07N60S5 07N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO 220 VDS 600 V RDS(on) 0.6 Ω ID 7.3 A PG-TO262-3-1 • Ultra low gate charge PG-TO220-3-1 • Periodic avalanche rated	Original	SPP07N60S5 SPI07N60S5 P-TO220-3-1 PG-TO262-3-1 PG-TO220-3-1 SPI07N60S5 PG-TO220-3-1 Q67040-S4172 PG-TO262	PDF
07N60C3 Abstract: 07n60c Text: 07N60C3, 07N60C3 07N60C3, 07N60C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.6 Ω ID 7.3 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO262-3-1	Original	SPP07N60C3, SPB07N60C3 SPI07N60C3, SPA07N60C3 P-TO220-3-31 P-TO220-3-31 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 P-TO-220-3-31: 07N60C3 07n60c	PDF
07N60C3 Abstract: No abstract text available Text: 07N60C3, 07N60C3 07N60C3, 07N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.6 Ω ID 7.3 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO262-3-1 P-TO263-3-2	Original	SPP07N60C3, SPB07N60C3 SPI07N60C3, SPA07N60C3 P-TO220-3-31 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 07N60C3	PDF
07n60c3 Abstract: 07N60C3 SMD Text: Preliminary data 07N60C3, 07N60C3 07N60C3, 07N60C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary VDS @ Tjmax 650 V • Ultra low gate charge RDS on 0.6 Ω ID 7.3 A • Periodic avalanche rated	Original	SPP07N60C3, SPB07N60C3 SPI07N60C3, SPA07N60C3 P-TO220-3-31 P-TO220-3-31 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 SPP07N60C3 07n60c3 07N60C3 SMD	PDF

07N60C3 Abstract: 07n60c 07n60 Text: Preliminary data 07N60C3, 07N60C3 07N60C3 Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax 650 V •=Periodic avalanche rated RDS on	Original	SPP07N60C3, SPB07N60C3 SPI07N60C3 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 SPP07N60C3 P-TO220-3-1 07N60C3 07n60c 07n60	PDF
07N60CFD Abstract: 07N60 JESD22 PG-TO-220-3-1 SPP07N60CFD 07n60c PG-TO220 infineon s66 Text: 07N60CFD CoolMOSTM Power Transistor Product Summary Features • Intrinsic fast-recovery body diode • Extremely low reverse recovery charge V DS @Tjmax 650 V R DS on ,max 0.7 Ω ID 6.6 A • Ultra low gate charge • Extreme dv /dt rated PG-TO220 • High peak current capability	Original	SPP07N60CFD PG-TO220 07N60CFD 07N60CFD 07N60 JESD22 PG-TO-220-3-1 SPP07N60CFD 07n60c PG-TO220 infineon s66	PDF
Untitled Abstract: No abstract text available Text: 07N60C3 Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.6 Ω ID 7.3 A Feature • New revolutionary high voltage technology • Ultra low gate charge PG-TO263 • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability	Original	SPB07N60C3 PG-TO263 Q67040-S4394 07N60C3	PDF
07N60CFD Abstract: JESD22 PG-TO220-3-31 SPA07N60CFD infineon s66 Text: 07N60CFD CoolMOSTM Power Transistor Product Summary Features • Intrinsic fast-recovery body diode • Extremely low reverse recovery charge V DS @Tjmax 650 V R DS on ,max 0.7 Ω ID 6.6 A • Ultra low gate charge • Extreme dv /dt rated PG-TO220 FP	Original	SPA07N60CFD PG-TO220 PG-TO220FP 07N60CFD 07N60CFD JESD22 PG-TO220-3-31 SPA07N60CFD infineon s66	PDF
Untitled Abstract: No abstract text available Text: 07N60CFD CoolMOSTM Power Transistor Product Summary Features • Intrinsic fast-recovery body diode • Extremely low reverse recovery charge V DS @Tjmax 650 V R DS on ,max 0.7 " ID 6.6 A • Ultra low gate charge • Extreme dv /dt rated PG-TO220 • High peak current capability	Original	SPP07N60CFD PG-TO220 07N60CFD	PDF
07N60S5 Abstract: No abstract text available Text: 07N60S5 07N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO-251 and TO-252 VDS 600 V RDS(on) 0.6 Ω ID 7.3 A PG-TO252 • Ultra low gate charge • Periodic avalanche rated PG-TO251	Original	SPU07N60S5 SPD07N60S5 O-251 O-252 PG-TO252 PG-TO251 SPD07N60S5 PG-TO251 07N60S5	PDF
07N60C3 Abstract: SPB07N60C3 07n60c transistor 07n60c3 SPA07N60C3 SPI07N60C3 SPP07N60C3 Text: Final data 07N60C3, 07N60C3 07N60C3, 07N60C3 Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.6 Ω ID 7.3 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO262-3-1	Original	SPP07N60C3, SPB07N60C3 SPI07N60C3, SPA07N60C3 P-TO220-3-31 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 P-TO-220-3-31: 07N60C3 SPB07N60C3 07n60c transistor 07n60c3 SPA07N60C3 SPI07N60C3 SPP07N60C3	PDF
07n60s5 Abstract: P-TO251-3-1 P-TO252 SPD07N60S5 SPU07N60S5 transistor 07n60s5 Text: 07N60S5 07N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO-251 and TO-252 VDS 600 V RDS(on) 0.6 Ω ID 7.3 A P-TO252 • Ultra low gate charge P-TO251-3-1 • Periodic avalanche rated	Original	SPU07N60S5 SPD07N60S5 O-251 O-252 P-TO252 P-TO251-3-1 Q67040-S4196 07N60S5 07n60s5 P-TO251-3-1 P-TO252 SPD07N60S5 SPU07N60S5 transistor 07n60s5	PDF
Q67040-S4423 Abstract: 07N60 07N60C3 380v SPD07N60C3 SPD07N60 P-TO251-3-1 SDP06S60 SPU07N60C3 Text: 07N60C3 07N60C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.6 Ω ID 7.3 A • New revolutionary high voltage technology • Worldwide best RDS(on) in TO-251 and TO-252 P-TO251-3-1 • Ultra low gate charge P-TO252-3-1	Original	SPD07N60C3 SPU07N60C3 O-251 O-252 P-TO251-3-1 P-TO252-3-1 Q67040-S4423 07N60C3 Q67040-S4423 07N60 07N60C3 380v SPD07N60C3 SPD07N60 P-TO251-3-1 SDP06S60 SPU07N60C3	PDF
Untitled Abstract: No abstract text available Text: SIEMENS 07N60S5 07N60S5 Preliminary data Cool MOS Power Transistor • New revolutionary high voltage technology • W orldw ide best Ros on in TO-251 and TO -252 • Ultra low gate charge • Periodic avalanche proved • Extrem e d v/d t rated • O ptim ized capacitances	OCR Scan	SPU07N60S5 SPD07N60S5 O-251 SPU07N60S5 P-T0251 07N60S5 Q67040-S4196 P-T0252	PDF

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Infineon Technologies AG SPD07N60C3ATMA1

Infineon Technologies AG SPA07N60C3XKSA1

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07N60 Datasheets Context Search

07N60S5

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07n60c2

07N60C2

smd TRANSISTOR sot-23 a7

07N60C3

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07N60S5

smd diode marking G12

smd marking g12

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07N60C3

07N60C3

07n60c3

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07N60CFD

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07N60CFD

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07N60S5

07N60C3

07n60s5

Q67040-S4423

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