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    H01N60I Search Results

    H01N60I Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    H01N60I Hi-Sincerity Mocroelectronics N-Channel Power Field Effect Transistor Original PDF

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    MOSFET MARK y2

    Abstract: mosfet k 61 y1 mosfet y1 MOSFET MARK H1 marking code k1 marking y1 H01N60I marking A1 TRANSISTOR PB40 H01N60
    Text: HI-SINCERITY Spec. No. : MOS200502 Issued Date : 2005.03.01 Revised Date : 2006.08.31 Page No. : 1/5 MICROELECTRONICS CORP. H01N60 Series H01N60 Series Pin Assignment N-Channel Power Field Effect Transistor Tab Description 1 This high voltage MOSFET uses an advanced termination scheme to


    Original     		PDF MOS200502 H01N60 200oC 183oC 217oC 260oC 245oC 10sec MOSFET MARK y2 mosfet k 61 y1 mosfet y1 MOSFET MARK H1 marking code k1 marking y1 H01N60I marking A1 TRANSISTOR PB40

    MOSFET MARK y2

    Abstract: H01N60I MOSFET MARK H1 H01N60 H01N60J TL 434 mosfet sn60
    Text: HI-SINCERITY Spec. No. : MOS200502 Issued Date : 2005.03.01 Revised Date : 2005.09.28 Page No. : 1/5 MICROELECTRONICS CORP. H01N60 Series H01N60 Series Pin Assignment N-Channel Power Field Effect Transistor Tab Description 1 This high voltage MOSFET uses an advanced termination scheme to


    Original     		PDF MOS200502 H01N60 200oC 183oC 217oC 260oC 245oC H01N60I, H01N60J MOSFET MARK y2 H01N60I MOSFET MARK H1 H01N60J TL 434 mosfet sn60