MN1280
Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor
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Mitsubishi M54564
Abstract: M54534 M54571P m54667p M54585FP m54571 M54566FP 16P2N M54522P equivalent m54532p
Text: Transistor-Array series Wide products range help reduce applications sets size and weight Transistor-Array series Application Transistor Array is a semiconductor integrated circuit in which a minute input current enables a high current drive. Transistor Arrays are used in a wide
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A/20V
16P2Z
16pin
225mil
05MIN.
20pin
300mil
20P2N
20P2E
Mitsubishi M54564
M54534
M54571P
m54667p
M54585FP
m54571
M54566FP
16P2N
M54522P equivalent
m54532p
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Untitled
Abstract: No abstract text available
Text: SGA8543Z SGA8543Z High IP3, Medium Power Discrete SiGe Transistor HIGH IP3, MEDIUM POWER DISCRETE SiGe TRANSISTOR Product Description Features RFMD’s SGA8543Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from 50MHzto3.5GHz. The
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SGA8543Z
SGA8543Z
50MHzto3
SGA8543ZSQ
SGA8543ZSR
SGA8543Z-EVB1
DS100809
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SGA8543Z-EVB2
Abstract: marking code 85Z SGA8543ZSQ gm 88 140C rfmd model marking code PHEMT marking code B Transistor code zl HEMT marking P
Text: SGA8543Z SGA8543Z High IP3, Medium Power Discrete SiGe Transistor HIGH IP3, MEDIUM POWER DISCRETE SiGe TRANSISTOR Product Description Features RFMD’s SGA8543Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from 50MHzto3.5GHz. The
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SGA8543Z
SGA8543Z
50MHzto3
SGA8543ZSQ
SGA8543ZSR
SGA8543Z-EVB1
DS100809
SGA8543Z-EVB2
marking code 85Z
SGA8543ZSQ
gm 88
140C
rfmd model marking code
PHEMT marking code B
Transistor code zl
HEMT marking P
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he8050l
Abstract: audio output TRANSISTOR NPN
Text: UNISONIC TECHNOLOGIES CO., LTD HE8050 NPN EPITAXIAL SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR DESCRIPTION The UTC HE8050 is a low voltage high current small signal NPN transistor, designed for Class B push-pull 2W audio amplifier for
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HE8050
HE8050
HE8550
O-92NL
HE8050L
HE8050-x-T9N-A-B
HE8050L-x-T9N-A-B
HE8050-x-T9N-A-K
HE8050L-x-T9N-A-K
O-92NL
he8050l
audio output TRANSISTOR NPN
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD HE8051 NPN SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR DESCRIPTION The UTC HE8051 is a low voltage high current small signal NPN transistor, designed for Class B push-pull 2W audio amplifier for
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HE8051
HE8051
HE8551
HE8051L-x-T92-B
HE8051L-x-T92-K
HE8051G-x-T92-B
HE8051G-x-T92-K
QW-R201-046
HE80lues
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD HE8550 PNP SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR DESCRIPTION The UTC HE8550 is a low voltage high current small signal PNP transistor, designed for Class B push-pull 2W audio amplifier for
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HE8550
HE8550
HE8050
HE8550-x-AB3-R
HE8550-x-AE3-R
HE8550-x-T92-B
HE8550-x-T92-K
HE8550-x-T9N-B
HE8550-x-T9N-K
HE8550L-x-AB3-R
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PHOTO TRANSISTOR
Abstract: Rise time of photo transistor photo transistor high current
Text: PRODUCTION SPECIFICATION PRODUCT LINE : PHOTO TRANSISTOR TITLE : HI-T70MB 1. GENERAL DESCRIPTION The HI-T70MB is a high sensitive NPN silicon photo transistor mounted in TO-18 type header with clear epoxy encapsulation. This photo transistor have awide angular response and
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HI-T70MB
HI-T70MB
200Lux
2000Lux
PHOTO TRANSISTOR
Rise time of photo transistor
photo transistor high current
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD HE8050 NPN SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR DESCRIPTION The UTC HE8050 is a low voltage high current small signal NPN transistor, designed for Class B push-pull 2W audio amplifier for
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HE8050
HE8050
HE8550
HE8050L-x-AB3-R
HE8050G-x-AB3-R
HE8050L-x-AE3-R
HE8050G-x-AE3-R
HE8050L-x-T92-B
HE8050G-x-T92-B
HE8050L-x-T92-K
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Untitled
Abstract: No abstract text available
Text: SGA9089Z SGA9089Z High IP3, Medium Power Discrete SiGe Transistor HIGH IP3, MEDIUM POWER DISCRETE SiGe TRANSISTOR Package: SOT-89 Product Description Features RFMD’s SGA9089Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from
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SGA9089Z
OT-89
SGA9089Z
50MHz
05GHz
44GHz
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he8050
Abstract: HE8550 HE8050G
Text: UNISONIC TECHNOLOGIES CO., LTD HE8050 NPN SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR DESCRIPTION The UTC HE8050 is a low voltage high current small signal NPN transistor, designed for Class B push-pull 2W audio amplifier for
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HE8050
HE8050
HE8550
HE8050-x-AB3-R
HE8050-x-AE3-R
HE8050-x-T92-B
HE8050-x-T92-K
HE8050-x-T9N-B
HE8050-x-T9N-K
HE8050L-x-AB3-R
HE8550
HE8050G
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he8050l
Abstract: he8050 HE8050-x-AB3-R HE8050G DA QW he8050 d HE8550
Text: UNISONIC TECHNOLOGIES CO., LTD HE8050 NPN SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR DESCRIPTION The UTC HE8050 is a low voltage high current small signal NPN transistor, designed for Class B push-pull 2W audio amplifier for
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HE8050
HE8050
HE8550
HE8050L
HE8050G
HE8050-x-AB3-R
HE8050-x-AE3-R
HE8050-x-T92-B
HE8050-x-T92-K
HE8050-x-T9N-B
he8050l
HE8050-x-AB3-R
HE8050G
DA QW
he8050 d
HE8550
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD HE8050 NPN SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR DESCRIPTION The UTC HE8050 is a low voltage high current small signal NPN transistor, designed for Class B push-pull 2W audio amplifier for
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HE8050
HE8050
HE8550
HE8050L-x-AB3-R
HE8050G-x-AB3-R
OT-89
HE8050L-x-AE3-R
HE8050G-x-AE3-R
OT-23
HE8050L-x-T92-B
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B12 IC marking code
Abstract: EMF21-7 EMF21
Text: EMF21 COMPLEX TRANSISTOR ARRAY Please click here to visit our online spice models database. Features NEW PRODUCT • • • • • Epitaxial Planar Die Construction One PNP Bipolar Transistor and One NPN Pre-Biased Transistor Ultra-Small Surface Mount Package
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EMF21
OT-563
J-STD-020C
MIL-STD-202,
DS31201
B12 IC marking code
EMF21-7
EMF21
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Transistor TL 31 AC
Abstract: j142
Text: SGA9089Z SGA9089Z High IP3, Medium Power Discrete SiGe Transistor HIGH IP3, MEDIUM POWER DISCRETE SiGe TRANSISTOR Package: SOT-89 Product Description Features RFMD’s SGA9089Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from
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SGA9089Z
OT-89
SGA9089Z
50MHz
44GHz
170mA
DS110606
Transistor TL 31 AC
j142
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SiGe POWER TRANSISTOR
Abstract: Gan hemt transistor RFMD InP HBT transistor low noise
Text: SGA9089Z SGA9089Z High IP3, Medium Power Discrete SiGe Transistor HIGH IP3, MEDIUM POWER DISCRETE SiGe TRANSISTOR Package: SOT-89 Product Description Features RFMD’s SGA9089Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from
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SGA9089Z
SGA9089Z
OT-89
50MHz
05GHz
44GHz
SiGe POWER TRANSISTOR
Gan hemt transistor RFMD
InP HBT transistor low noise
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HE8550G
Abstract: he8050 HE8550
Text: UNISONIC TECHNOLOGIES CO., LTD HE8550 PNP SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR DESCRIPTION The UTC HE8550 is a low voltage high current small signal PNP transistor, designed for Class B push-pull 2W audio amplifier for
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HE8550
HE8550
HE8050
HE8550-x-AB3-R
HE8550-x-AE3-R
HE8550-x-T92-B
HE8550-x-T92-K
HE8550-x-T9N-B
HE8550-x-T9N-K
HE8550L-x-AB3-R
HE8550G
he8050
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Untitled
Abstract: No abstract text available
Text: UTC HE8050 NPN EPITAXIAL SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR DESCRIPTION The UTC HE8050 is a low voltage high current small signal NPN transistor, designed for Class B push-pull 2W audio amplifier for portable radio and general purpose
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HE8050
HE8050
HE8550
O-92L
QW-R202-007
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2n2222a transistor
Abstract: 2N2222ADCSM dual npn 500ma 2N2222A surface mount 2N2222A LE17 013 transistor
Text: SILICON SWITCHING NPN TRANSISTOR 2N2222ADCSM • Dual High Speed, Medium Power Saturated Switching Transistor • Hermetic Surface Mount Ceramic Package • Dual NPN version of the 2N2222A Transistor • Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated . Per Device
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2N2222ADCSM
2N2222A
500mW
MO-041BB)
2n2222a transistor
2N2222ADCSM
dual npn 500ma
2N2222A surface mount
LE17
013 transistor
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HE8051
Abstract: HE8551
Text: UTC HE8051 NPN EPITAXIAL SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR DESCRIPTION The UTC HE8051 is a low voltage high current small signal NPN transistor, designed for Class B push-pull 2W audio amplifier for portable radio and general purpose
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HE8051
HE8051
HE8551
QW-R201-046
HE8551
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Untitled
Abstract: No abstract text available
Text: UTC HE8050 NPN EPITAXIAL SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR DESCRIPTION The UTC HE8050 is a low voltage high current small signal NPN transistor, designed for Class B push-pull 2W audio amplifier for portable radio and general purpose
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HE8050
HE8050
HE8550
OT-89
QW-R208-013
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Untitled
Abstract: No abstract text available
Text: UTC HE8050 NPN EPITAXIAL SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR DESCRIPTION The UTC HE8050 is a low voltage high current small signal NPN transistor, designed for Class B push-pull 2W audio amplifier for portable radio and general purpose
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HE8050
HE8050
HE8550
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2N1046
Abstract: germanium power transistor diode germanium tu 38 f Germanium Transistor Texas Germanium 639 TRANSISTOR PNP Germanium power diode germanium tu 38 e
Text: TYPE 2N1046 P-N-P ALLOY-DIFFUSED GERMANIUM POWER TRANSISTOR HIGH-FREQUENCY POWER TRANSISTOR FOR MILITARY AND INDUSTRIAL APPLICATIONS 5H %I P* mechanical data This transistor is in a p recision-w elded, herm etically sealed enclosure. The mounting b ase provides an
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2N1046
DC-11
germanium power transistor
diode germanium tu 38 f
Germanium Transistor
Texas Germanium
639 TRANSISTOR PNP
Germanium power
diode germanium tu 38 e
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SGA-9089Z
Abstract: InP HBT transistor low noise
Text: SGA-9089Z SGA-9089Z High IP3, Medium Power Discrete SiGe Transistor HIGH IP3, MEDIUM POWER DISCRETE SiGe TRANSISTOR Package: SOT-89 Product Description Features RFMD’s SGA-9089Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from
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SGA-9089Z
OT-89
SGA-9089Z
50MHz
170mA
EDS-105051
SGA9089Z"
InP HBT transistor low noise
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