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    TRANSISTOR HE Search Results

    TRANSISTOR HE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR HE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MN1280

    Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
    Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor


    Original     		PDF

    Mitsubishi M54564

    Abstract: M54534 M54571P m54667p M54585FP m54571 M54566FP 16P2N M54522P equivalent m54532p
    Text: Transistor-Array series Wide products range help reduce applications sets size and weight Transistor-Array series Application Transistor Array is a semiconductor integrated circuit in which a minute input current enables a high current drive. Transistor Arrays are used in a wide


    Original     		PDF A/20V 16P2Z 16pin 225mil 05MIN. 20pin 300mil 20P2N 20P2E Mitsubishi M54564 M54534 M54571P m54667p M54585FP m54571 M54566FP 16P2N M54522P equivalent m54532p

    Untitled

    Abstract: No abstract text available
    Text: SGA8543Z SGA8543Z High IP3, Medium Power Discrete SiGe Transistor HIGH IP3, MEDIUM POWER DISCRETE SiGe TRANSISTOR Product Description Features RFMD’s SGA8543Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from 50MHzto3.5GHz. The


    Original     		PDF SGA8543Z SGA8543Z 50MHzto3 SGA8543ZSQ SGA8543ZSR SGA8543Z-EVB1 DS100809

    SGA8543Z-EVB2

    Abstract: marking code 85Z SGA8543ZSQ gm 88 140C rfmd model marking code PHEMT marking code B Transistor code zl HEMT marking P
    Text: SGA8543Z SGA8543Z High IP3, Medium Power Discrete SiGe Transistor HIGH IP3, MEDIUM POWER DISCRETE SiGe TRANSISTOR Product Description Features RFMD’s SGA8543Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from 50MHzto3.5GHz. The


    Original     		PDF SGA8543Z SGA8543Z 50MHzto3 SGA8543ZSQ SGA8543ZSR SGA8543Z-EVB1 DS100809 SGA8543Z-EVB2 marking code 85Z SGA8543ZSQ gm 88 140C rfmd model marking code PHEMT marking code B Transistor code zl HEMT marking P

    he8050l

    Abstract: audio output TRANSISTOR NPN
    Text: UNISONIC TECHNOLOGIES CO., LTD HE8050 NPN EPITAXIAL SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR DESCRIPTION The UTC HE8050 is a low voltage high current small signal NPN transistor, designed for Class B push-pull 2W audio amplifier for


    Original     		PDF HE8050 HE8050 HE8550 O-92NL HE8050L HE8050-x-T9N-A-B HE8050L-x-T9N-A-B HE8050-x-T9N-A-K HE8050L-x-T9N-A-K O-92NL he8050l audio output TRANSISTOR NPN

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD HE8051 NPN SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR „ DESCRIPTION The UTC HE8051 is a low voltage high current small signal NPN transistor, designed for Class B push-pull 2W audio amplifier for


    Original     		PDF HE8051 HE8051 HE8551 HE8051L-x-T92-B HE8051L-x-T92-K HE8051G-x-T92-B HE8051G-x-T92-K QW-R201-046 HE80lues

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD HE8550 PNP SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR „ DESCRIPTION The UTC HE8550 is a low voltage high current small signal PNP transistor, designed for Class B push-pull 2W audio amplifier for


    Original     		PDF HE8550 HE8550 HE8050 HE8550-x-AB3-R HE8550-x-AE3-R HE8550-x-T92-B HE8550-x-T92-K HE8550-x-T9N-B HE8550-x-T9N-K HE8550L-x-AB3-R

    PHOTO TRANSISTOR

    Abstract: Rise time of photo transistor photo transistor high current
    Text: PRODUCTION SPECIFICATION PRODUCT LINE : PHOTO TRANSISTOR TITLE : HI-T70MB 1. GENERAL DESCRIPTION The HI-T70MB is a high sensitive NPN silicon photo transistor mounted in TO-18 type header with clear epoxy encapsulation. This photo transistor have awide angular response and


    Original     		PDF HI-T70MB HI-T70MB 200Lux 2000Lux PHOTO TRANSISTOR Rise time of photo transistor photo transistor high current

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD HE8050 NPN SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR  DESCRIPTION The UTC HE8050 is a low voltage high current small signal NPN transistor, designed for Class B push-pull 2W audio amplifier for


    Original     		PDF HE8050 HE8050 HE8550 HE8050L-x-AB3-R HE8050G-x-AB3-R HE8050L-x-AE3-R HE8050G-x-AE3-R HE8050L-x-T92-B HE8050G-x-T92-B HE8050L-x-T92-K

    Untitled

    Abstract: No abstract text available
    Text: SGA9089Z SGA9089Z High IP3, Medium Power Discrete SiGe Transistor HIGH IP3, MEDIUM POWER DISCRETE SiGe TRANSISTOR Package: SOT-89 Product Description Features RFMD’s SGA9089Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from


    Original     		PDF SGA9089Z OT-89 SGA9089Z 50MHz 05GHz 44GHz

    he8050

    Abstract: HE8550 HE8050G
    Text: UNISONIC TECHNOLOGIES CO., LTD HE8050 NPN SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR „ DESCRIPTION The UTC HE8050 is a low voltage high current small signal NPN transistor, designed for Class B push-pull 2W audio amplifier for


    Original     		PDF HE8050 HE8050 HE8550 HE8050-x-AB3-R HE8050-x-AE3-R HE8050-x-T92-B HE8050-x-T92-K HE8050-x-T9N-B HE8050-x-T9N-K HE8050L-x-AB3-R HE8550 HE8050G

    he8050l

    Abstract: he8050 HE8050-x-AB3-R HE8050G DA QW he8050 d HE8550
    Text: UNISONIC TECHNOLOGIES CO., LTD HE8050 NPN SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR „ DESCRIPTION The UTC HE8050 is a low voltage high current small signal NPN transistor, designed for Class B push-pull 2W audio amplifier for


    Original     		PDF HE8050 HE8050 HE8550 HE8050L HE8050G HE8050-x-AB3-R HE8050-x-AE3-R HE8050-x-T92-B HE8050-x-T92-K HE8050-x-T9N-B he8050l HE8050-x-AB3-R HE8050G DA QW he8050 d HE8550

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD HE8050 NPN SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR  DESCRIPTION The UTC HE8050 is a low voltage high current small signal NPN transistor, designed for Class B push-pull 2W audio amplifier for


    Original     		PDF HE8050 HE8050 HE8550 HE8050L-x-AB3-R HE8050G-x-AB3-R OT-89 HE8050L-x-AE3-R HE8050G-x-AE3-R OT-23 HE8050L-x-T92-B

    B12 IC marking code

    Abstract: EMF21-7 EMF21
    Text: EMF21 COMPLEX TRANSISTOR ARRAY Please click here to visit our online spice models database. Features NEW PRODUCT • • • • • Epitaxial Planar Die Construction One PNP Bipolar Transistor and One NPN Pre-Biased Transistor Ultra-Small Surface Mount Package


    Original     		PDF EMF21 OT-563 J-STD-020C MIL-STD-202, DS31201 B12 IC marking code EMF21-7 EMF21

    Transistor TL 31 AC

    Abstract: j142
    Text: SGA9089Z SGA9089Z High IP3, Medium Power Discrete SiGe Transistor HIGH IP3, MEDIUM POWER DISCRETE SiGe TRANSISTOR Package: SOT-89 Product Description Features RFMD’s SGA9089Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from


    Original     		PDF SGA9089Z OT-89 SGA9089Z 50MHz 44GHz 170mA DS110606 Transistor TL 31 AC j142

    SiGe POWER TRANSISTOR

    Abstract: Gan hemt transistor RFMD InP HBT transistor low noise
    Text: SGA9089Z SGA9089Z High IP3, Medium Power Discrete SiGe Transistor HIGH IP3, MEDIUM POWER DISCRETE SiGe TRANSISTOR Package: SOT-89 Product Description Features RFMD’s SGA9089Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from


    Original     		PDF SGA9089Z SGA9089Z OT-89 50MHz 05GHz 44GHz SiGe POWER TRANSISTOR Gan hemt transistor RFMD InP HBT transistor low noise

    HE8550G

    Abstract: he8050 HE8550
    Text: UNISONIC TECHNOLOGIES CO., LTD HE8550 PNP SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR „ DESCRIPTION The UTC HE8550 is a low voltage high current small signal PNP transistor, designed for Class B push-pull 2W audio amplifier for


    Original     		PDF HE8550 HE8550 HE8050 HE8550-x-AB3-R HE8550-x-AE3-R HE8550-x-T92-B HE8550-x-T92-K HE8550-x-T9N-B HE8550-x-T9N-K HE8550L-x-AB3-R HE8550G he8050

    Untitled

    Abstract: No abstract text available
    Text: UTC HE8050 NPN EPITAXIAL SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR DESCRIPTION The UTC HE8050 is a low voltage high current small signal NPN transistor, designed for Class B push-pull 2W audio amplifier for portable radio and general purpose


    Original     		PDF HE8050 HE8050 HE8550 O-92L QW-R202-007

    2n2222a transistor

    Abstract: 2N2222ADCSM dual npn 500ma 2N2222A surface mount 2N2222A LE17 013 transistor
    Text: SILICON SWITCHING NPN TRANSISTOR 2N2222ADCSM • Dual High Speed, Medium Power Saturated Switching Transistor • Hermetic Surface Mount Ceramic Package • Dual NPN version of the 2N2222A Transistor • Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated . Per Device


    Original     		PDF 2N2222ADCSM 2N2222A 500mW MO-041BB) 2n2222a transistor 2N2222ADCSM dual npn 500ma 2N2222A surface mount LE17 013 transistor

    HE8051

    Abstract: HE8551
    Text: UTC HE8051 NPN EPITAXIAL SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR DESCRIPTION The UTC HE8051 is a low voltage high current small signal NPN transistor, designed for Class B push-pull 2W audio amplifier for portable radio and general purpose


    Original     		PDF HE8051 HE8051 HE8551 QW-R201-046 HE8551

    Untitled

    Abstract: No abstract text available
    Text: UTC HE8050 NPN EPITAXIAL SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR DESCRIPTION The UTC HE8050 is a low voltage high current small signal NPN transistor, designed for Class B push-pull 2W audio amplifier for portable radio and general purpose


    Original     		PDF HE8050 HE8050 HE8550 OT-89 QW-R208-013

    Untitled

    Abstract: No abstract text available
    Text: UTC HE8050 NPN EPITAXIAL SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR DESCRIPTION The UTC HE8050 is a low voltage high current small signal NPN transistor, designed for Class B push-pull 2W audio amplifier for portable radio and general purpose


    Original     		PDF HE8050 HE8050 HE8550

    SGA-9089Z

    Abstract: InP HBT transistor low noise
    Text: SGA-9089Z SGA-9089Z High IP3, Medium Power Discrete SiGe Transistor HIGH IP3, MEDIUM POWER DISCRETE SiGe TRANSISTOR Package: SOT-89 Product Description Features RFMD’s SGA-9089Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from


    Original     		PDF SGA-9089Z OT-89 SGA-9089Z 50MHz 170mA EDS-105051 SGA9089Z" InP HBT transistor low noise

    2N1046

    Abstract: germanium power transistor diode germanium tu 38 f Germanium Transistor Texas Germanium 639 TRANSISTOR PNP Germanium power diode germanium tu 38 e
    Text: TYPE 2N1046 P-N-P ALLOY-DIFFUSED GERMANIUM POWER TRANSISTOR HIGH-FREQUENCY POWER TRANSISTOR FOR MILITARY AND INDUSTRIAL APPLICATIONS 5H %I P* mechanical data This transistor is in a p recision-w elded, herm etically sealed enclosure. The mounting b ase provides an


    OCR Scan     		PDF 2N1046 DC-11 germanium power transistor diode germanium tu 38 f Germanium Transistor Texas Germanium 639 TRANSISTOR PNP Germanium power diode germanium tu 38 e