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    SGA9089Z Search Results

    SGA9089Z Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SGA-9089Z Sirenza Microdevices High IP3 Medium Power Discrete SiGe Transistor Original PDF

    SGA9089Z Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: SGA9089Z SGA9089Z High IP3, Medium Power Discrete SiGe Transistor HIGH IP3, MEDIUM POWER DISCRETE SiGe TRANSISTOR Package: SOT-89 Product Description Features RFMD’s SGA9089Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from


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    PDF SGA9089Z OT-89 SGA9089Z 50MHz 05GHz 44GHz

    Transistor TL 31 AC

    Abstract: j142
    Text: SGA9089Z SGA9089Z High IP3, Medium Power Discrete SiGe Transistor HIGH IP3, MEDIUM POWER DISCRETE SiGe TRANSISTOR Package: SOT-89 Product Description Features RFMD’s SGA9089Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from


    Original
    PDF SGA9089Z OT-89 SGA9089Z 50MHz 44GHz 170mA DS110606 Transistor TL 31 AC j142

    SiGe POWER TRANSISTOR

    Abstract: Gan hemt transistor RFMD InP HBT transistor low noise
    Text: SGA9089Z SGA9089Z High IP3, Medium Power Discrete SiGe Transistor HIGH IP3, MEDIUM POWER DISCRETE SiGe TRANSISTOR Package: SOT-89 Product Description Features RFMD’s SGA9089Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from


    Original
    PDF SGA9089Z SGA9089Z OT-89 50MHz 05GHz 44GHz SiGe POWER TRANSISTOR Gan hemt transistor RFMD InP HBT transistor low noise

    Untitled

    Abstract: No abstract text available
    Text: SGA9089Z S G 9 Hi g HIGH IP3, MEDIUM POWER DISCRETE SiGe TRANSISTOR Package: SOT-89 Features RFMD’s SGA9089Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from 50MHz to 4.0GHz. The SGA9089Z is optimized for 3V operation. The


    Original
    PDF SGA9089Z OT-89 SGA9089Z 50MHz 44GHz 170mA DS140312

    SGA6489Z

    Abstract: IC 7489 JESD22-B102-C SGA6389Z SGA-5589Z SGA-7489 SGA-6489 SGA-9289Z SGA9189Z SGC-6489
    Text: Reliability Report SGA/SGC Series in SOT-89 Package SnPb Plated SGA-5289 SGA-5389 SGA-5489 SGA-5589 SGA-6289 SGA-6389 SGA-6489 SGA-6589 SGA-7489 SGA-9089 SGA-9189 SGA-9289 Matte Sn, RoHS Compliant SGA-5289Z SGA-5389Z SGA-5489Z SGA-5589Z SGA-6289Z SGA-6389Z


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    PDF OT-89 SGA-5289 SGA-5389 SGA-5489 SGA-5589 SGA-6289 SGA-6389 SGA-6489 SGA-6589 SGA-7489 SGA6489Z IC 7489 JESD22-B102-C SGA6389Z SGA-5589Z SGA-7489 SGA-6489 SGA-9289Z SGA9189Z SGC-6489

    transistor tl 187

    Abstract: transistor RF S-parameters SIRENZA MARKING TRANSISTOR tl-31
    Text: Preliminary SGA-9089Z Product Description Sirenza Microdevices’ SGA-9089Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from 50 MHz to 4.0 GHz. The SGA-9089Z is optimized for 3.0V operation. The


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    PDF SGA-9089Z SGA-9089Z EDS-105051 transistor tl 187 transistor RF S-parameters SIRENZA MARKING TRANSISTOR tl-31

    VCO-102

    Abstract: NBB-502 spf-5189 RF5643wda cxe-2089
    Text: RFMD Product Selection Guide 2011 - 2012 Multiple Markets. Multiple Choices. One RFMD. ® Multiple Markets. Multiple Choices. One RFMD . ® RFMD® is a global leader addressing the RF industry’s complex challenges by delivering a broad portfolio of high


    Original
    PDF

    transistor tl 187

    Abstract: SGA-9089 SIRENZA MARKING SiGe POWER TRANSISTOR transistor RF S-parameters bipolar transistor ghz s-parameter RF TRANSISTOR 2.5 GHZ s parameter transistor 2440 130C SGA-9089Z
    Text: Preliminary SGA-9089Z Product Description Sirenza Microdevices’ SGA-9089Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from DC to 4.0 GHz. The SGA-9089Z is optimized for 3.0V operation. The device


    Original
    PDF SGA-9089Z SGA-9089Z EDS-105051 transistor tl 187 SGA-9089 SIRENZA MARKING SiGe POWER TRANSISTOR transistor RF S-parameters bipolar transistor ghz s-parameter RF TRANSISTOR 2.5 GHZ s parameter transistor 2440 130C

    Untitled

    Abstract: No abstract text available
    Text: Advanced SGA-9089Z Product Description Sirenza Microdevices’ SGA-9089Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from DC to 4.0 GHz. The SGA-9089Z is optimized for 3.0V operation. The device


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    PDF SGA-9089Z SGA-9089Z EDS-105051

    MCH185C122KK

    Abstract: SGA-9089Z AN080 SGA-9089 MCH185A390JK MCH185A4R7CK ML200C 101216 LL1608-FS4N7S MCH185A5R6CK
    Text: Design Application Note - AN-080 SGA-9089Z Amplifier Application Circuits Design Considerations and Trade-offs -Biasing Techniques Abstract Sirenza Microdevices’ SGA-9089Z is a high performance SiGe amplifier designed for operation from 50 MHz to 3.0 GHz. This application note illustrates application circuits


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    PDF AN-080 SGA-9089Z 2440MHz EAN-105081 MCH185C122KK AN080 SGA-9089 MCH185A390JK MCH185A4R7CK ML200C 101216 LL1608-FS4N7S MCH185A5R6CK

    SGC-6489

    Abstract: SGA9189Z RF transistor SOT-89 A102 TRANSISTOR IC 7489 SGA6489Z IC 7489 DATASHEET JESD22-A104 TEST CONDITION K sga6389z SGA-9089
    Text: Reliability Report SGA/SGC Series in SOT-89 Package SnPb Plated SGA-5289 SGA-5389 SGA-5489 SGA-5589 SGA-6289 SGA-6389 SGA-6489 SGA-6589 SGA-7489 SGA-9089 SGA-9189 SGA-9289 Matte Sn, RoHS Compliant SGA-5289Z SGA-5389Z SGA-5489Z SGA-5589Z SGA-6289Z SGA-6389Z


    Original
    PDF OT-89 SGA-5289 SGA-5389 SGA-5489 SGA-5589 SGA-6289 SGA-6389 SGA-6489 SGA-6589 SGA-7489 SGC-6489 SGA9189Z RF transistor SOT-89 A102 TRANSISTOR IC 7489 SGA6489Z IC 7489 DATASHEET JESD22-A104 TEST CONDITION K sga6389z SGA-9089

    SGA-9089Z

    Abstract: 105051
    Text: SGA-9089Z High IP3, Medium Power Discrete SiGe Transistor SGA-9089Z Preliminary HIGH IP3, MEDIUM POWER DISCRETE SiGe TRANSISTOR RFMD Green, RoHS Compliant, Pb-Free Package: SOT-89 Product Description Features RFMD’s SGA-9089Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from


    Original
    PDF SGA-9089Z OT-89 SGA-9089Z 50MHz 170mA EDS-105051 SGA9089Z" 105051

    SGA-9089Z

    Abstract: InP HBT transistor low noise
    Text: SGA-9089Z SGA-9089Z High IP3, Medium Power Discrete SiGe Transistor HIGH IP3, MEDIUM POWER DISCRETE SiGe TRANSISTOR Package: SOT-89 Product Description Features RFMD’s SGA-9089Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from


    Original
    PDF SGA-9089Z OT-89 SGA-9089Z 50MHz 170mA EDS-105051 SGA9089Z" InP HBT transistor low noise

    RF5632

    Abstract: PNP-1090-P22 UMX-254-D16-G UMX-333-D16-G RF1194 UMX-406-D16 SPF-5043Z UMX-519-D16-G SHF-0289 spf-5122z
    Text: 2009 RFMD Multi-Market Product Selection Guide Multiple Markets. Multiple Choices. One RFMD. RFMD® is a global leader addressing the RF industry’s complex challenges by delivering a broad portfolio of high-performance RF components for a diverse range of applications and end markets. Our product


    Original
    PDF