TRANSISTOR GIGAHERTZ Search Results

TRANSISTOR GIGAHERTZ Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTOR GIGAHERTZ Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
NTC 220-11 Abstract: PHILIPS TRANSMITTING BIPOLAR Philips Semiconductors Small-signal Transistors Selection guide Text: Philips Semiconductors RF transmitting transistor and power amplifier fundamentals 1 Transmitting transistor design transistors are suitable, see panel, and Philips Semiconductors’ portfolio includes both types. Their relative merits are summarized later in this section. First,	Original	PDF	transisto25-735. NTC 220-11 PHILIPS TRANSMITTING BIPOLAR Philips Semiconductors Small-signal Transistors Selection guide
bipolar transistor ghz s-parameter Abstract: 1565E HBFP-0450 LL2012-F 5e19 bipolar transistor s-parameter COND10 Text: 1800 MHz Medium Power Amplifier using the HBFP-0450 Silicon Bipolar Transistor Application Note 1168 Introduction HBFP-0450 Medium Power Amplifier Design Avago Technologies’ HBFP-0450 is a high performance, medium power Isolated Collector transistor housed in	Original	PDF	HBFP-0450 HBFP-0450 OT-343 SC-70) 031-inch 59257503E-13 292E-1 bipolar transistor ghz s-parameter 1565E LL2012-F 5e19 bipolar transistor s-parameter COND10
C5750X7R1H106M Abstract: C3225X7R1H155M RF35 SM270 TRANSISTOR 751 Text: BLF6G20LS-75 Power LDMOS transistor Rev. 01 — 18 February 2008 Preliminary data sheet 1. Product profile 1.1 General description 75 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance	Original	PDF	BLF6G20LS-75 ACPR400k ACPR600k BLF6G20LS-75 C5750X7R1H106M C3225X7R1H155M RF35 SM270 TRANSISTOR 751
BLF6G20 Abstract: BLF6G20-75 C3225X7R1H155M C5750X7R1H106M RF35 SM270 gp 752 Text: BLF6G20-75; BLF6G20LS-75 Power LDMOS transistor Rev. 02 — 9 February 2009 Product data sheet 1. Product profile 1.1 General description 75 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance	Original	PDF	BLF6G20-75; BLF6G20LS-75 ACPR400k ACPR600k BLF6G20-75 BLF6G20LS-75 BLF6G20 C3225X7R1H155M C5750X7R1H106M RF35 SM270 gp 752
RF Transistor s-parameter Abstract: HBFP-0450 ADS MODEL HBFP0450 Text: 1800 MHz Medium Power Amplifier using the HBFP-0450 Silicon Bipolar Transistor Application Note 1168 Introduction Hewlett-Packard’s HBFP-0450 is a high performance, medium power Isolated Collector transistor housed in a 4-lead SOT-343 SC-70 surface mount package. Described as a high performance, medium	Original	PDF	HBFP-0450 OT-343 SC-70) 031-inch 5968-2788E RF Transistor s-parameter HBFP-0450 ADS MODEL HBFP0450
C5750X7R1H106M Abstract: SM270 BLF6G20-75 C3225X7R1H155M RF35 Text: BLF6G20-75 Power LDMOS transistor Rev. 01 — 6 March 2008 Preliminary data sheet 1. Product profile 1.1 General description 75 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit.	Original	PDF	BLF6G20-75 ACPR400k ACPR600k BLF6G20-75 C5750X7R1H106M SM270 C3225X7R1H155M RF35
Basic ARM9 block diagram Abstract: vhdl code for speech recognition arm9 architecture verilog code for speech recognition Mistral ARM920T ARM946E-S ARM920T vhdl code verilog code for parallel flash memory vhdl code for lcd of xilinx Text: Atmel’s Platform-based Methodology for System-on-Chip Design Peter Bishop, Communications Manager, Atmel Corporation Laurent Lacombe, System Prototyping Manager, Atmel Corporation Summary The semiconductor industry is moving towards nanoscale technology with IC transistor counts	Original	PDF	ARM920T ARM946E-S Basic ARM9 block diagram vhdl code for speech recognition arm9 architecture verilog code for speech recognition Mistral ARM920T vhdl code verilog code for parallel flash memory vhdl code for lcd of xilinx
NE76100 Abstract: NE76100M NE76100N Text: GENERAL PURPOSE GaAs MESFET FEATURES • LG = 1.0 µm, WG = 400 µm DESCRIPTION NE76100 is a high performance gallium arsenide metal semiconductor field effect transistor chip. Its low noise figure makes this device appropriate for use in the second or third stages of	Original	PDF	NE76100 NE76100 NE76100N NE76100M 24-Hour NE76100M NE76100N
Philips Application Note ECO6907 Abstract: AN98032 BD135 CURVES ECO7703 BD136 SMD TRANSISTOR COE82101 bd136 equivalent mosfet HF amplifier AN98030 HF power amplifier blf177 Text: Philips Semiconductors RF transmitting transistor and power amplifier fundamentals 3 Power amplifier design POWER AMPLIFIER DESIGN NOTE TO SECTION 3 3.1 Classes of operation and biasing 3.1.1 For clarity in equations, identifiers such as R1, +jB2, −jX3 in drawings are written as	Original	PDF
NE76100 Abstract: NE76100M NE76100N Text: GENERAL PURPOSE GaAs MESFET FEATURES DESCRIPTION Optimum Noise Figure, NFOPT dB • LG = 1.0 µm, WG = 400 µm 4 24 3.5 21 3 18 Ga 2.5 15 2 12 9 1.5 6 1 NF 0.5 3 NE76100 is a high performance gallium arsenide metal semiconductor field effect transistor chip. Its low noise figure	Original	PDF	NE76100 NE76100 NE76100N NE76100M 24-Hour NE76100M NE76100N
DN4148 Abstract: 2N5109 spice power transistor bjt 1000 a 7432N 2n5109 transistor B9112 QN5109 TF011 bjt oscillator 2N5109 Text: New Models Simulate RF Circuits Its no news to those who simulate that the accuracy of SPICE is directly related to the accuracy of the models. What may be news is that simulation of high frequency circuits well into the gigahertz range is now possible due to the introduction of some new RF	Original	PDF	36E-13 111E-09 80E-08 82E-01 758E-12 822E-12 12E-13 40E-14 1E-14 40E-01 DN4148 2N5109 spice power transistor bjt 1000 a 7432N 2n5109 transistor B9112 QN5109 TF011 bjt oscillator 2N5109
electronic power generator using transistor projects Abstract: verilog code voltage regulator vhdl VHDL code for ADC and DAC SPI with FPGA FPGA based dma controller using vhdl verilog code for DFT XC2V8000 ADC07 usb programmer xilinx free verilog code for parallel flash memory source code verilog for matrix transformation Text: Using ARM Core-based Flash MCUs as a Platform for Custom Systems-on-Chip 16-Feb-06 Peter Bishop, Communications Manager, Atmel Rousset Summary Advances in process technology are making it possible to fabricate systems-on-chip SoCs containing hundreds of millions of transistors operating at gigahertz clock frequencies in a	Original	PDF	16-Feb-06 electronic power generator using transistor projects verilog code voltage regulator vhdl VHDL code for ADC and DAC SPI with FPGA FPGA based dma controller using vhdl verilog code for DFT XC2V8000 ADC07 usb programmer xilinx free verilog code for parallel flash memory source code verilog for matrix transformation
BGU7073 Abstract: BGU7072 Infineon Power Management Selection Guide 2011 toshiba car audio catalog 2015 BAP50-03 spice model BB 804 varicap diode MOSFET TOSHIBA 2015 RF MANUAL 19TH EDITION RF MANUAL blf188 Text: RF MANUAL 19TH EDITION www.nxp.com www.nxp.com Application and design manual for High Performance RF products 2015 NXP Semiconductors N.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by	Original	PDF
2N5596 Abstract: motorola AN1033 TRW MICROWAVE AN1033 8707 motorola transistor k 2723 Nippon capacitors Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by AN1033/D SEMICONDUCTOR APPLICATION NOTE AN1033 Match Impedances in Microwave Amplifiers and you’re on the way to successful solid-state designs. Here’s how to analyze input/output factors and to create a practical design.	Original	PDF	AN1033/D AN1033 2N5596 motorola AN1033 TRW MICROWAVE AN1033 8707 motorola transistor k 2723 Nippon capacitors

BB 509 varicap diode Abstract: BLF6G22L ON503 tea6849 bf1107 spice model PIN diode ADS model ULTRA FAST DIODES SANYO catalog RF MANUAL diode varicap BB 112 adi cmos bipolar SiGe Text: UNLEASH RF RF Manual 17 edition th Application and design manual for High Performance RF products June 2013 NXP enables you to unleash the performance of next-generation RF and microwave designs NXP's RF Manual is one of the most important reference tools on the market for today’s	Original	PDF
Motorola Mil Std. 883 Abstract: RADC-TR-67-108 aluminum solid capacitor mil std AN1025 motorola handbook MOTOROLA linear handbook trw RF POWER TRANSISTOR 217B motorola transistor handbook Motorola operational amplifier discrete Text: Order this document by AN1025/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN1025 RELIABILITY CONSIDERATIONS IN DESIGN AND USE OF RF INTEGRATED CIRCUITS Prepared by: James Humphrey and George Luettgenau ABSTRACT DEFINITIONS Reliability is a major factor in the profitability of CATV	Original	PDF	AN1025/D AN1025 Motorola Mil Std. 883 RADC-TR-67-108 aluminum solid capacitor mil std AN1025 motorola handbook MOTOROLA linear handbook trw RF POWER TRANSISTOR 217B motorola transistor handbook Motorola operational amplifier discrete
failure rate Freescale Abstract: Motorola Mil Std. 883 motorola handbook AN1025 217B 5bp transistor making RADC-TR-67-108 Motorola operational amplifier discrete BALLAST MOTOROLA "failure rate" Freescale Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by AN1025/D SEMICONDUCTOR APPLICATION NOTE AN1025 Reliability Considerations in Design and Use of RF Integrated Circuits Freescale Semiconductor, Inc. Prepared by: James Humphrey and George Luettgenau	Original	PDF	AN1025/D AN1025 failure rate Freescale Motorola Mil Std. 883 motorola handbook AN1025 217B 5bp transistor making RADC-TR-67-108 Motorola operational amplifier discrete BALLAST MOTOROLA "failure rate" Freescale
R707 433,92 MHz Abstract: epcos r707 SMD CODE L01 S M R707 transistor R05 smd SMD L03 epcos r705 SAW R707 epcos r670 L03 SMD Text: Application Note SAW-Components Principles of SAWR-stabilized oscillators and transmitters. App: Note #1 This application note describes the physical principle of SAW-stabilized oscillator. Oscillator structures for one- and two-port SAW resonators are discussed.	Original	PDF	92MHz D-81617 BFS17P R707 433,92 MHz epcos r707 SMD CODE L01 S M R707 transistor R05 smd SMD L03 epcos r705 SAW R707 epcos r670 L03 SMD
R707 433,92 MHz Abstract: saw Colpitts circuit design SM r707 SAW s m r707 r707 saw colpitts oscillator resonator 433.92 Mhz two-port saw resonator TO39 SAW R707 siemens r707 433.92 loop antenna Text: Siemens Matsushita Components Principles of SAWR-stabilized oscillators and transmitters. App: Note #1 This application note describes the principles of SAW-stabilized oscillator design. Oscillator types for one- and two-port SAW resonators are discussed.	Original	PDF	92MHz BFS17P R707 433,92 MHz saw Colpitts circuit design SM r707 SAW s m r707 r707 saw colpitts oscillator resonator 433.92 Mhz two-port saw resonator TO39 SAW R707 siemens r707 433.92 loop antenna
epcos r727 Abstract: epcos r705 SMD CODE L01 433.92 Mhz two-port saw resonator colpitts oscillator L03 SMD smd-transistor code book 433.92 transmitter, pcb layout smd-transistor DATA BOOK R727 Text: Application Note SAW-Components Principles of SAWR-stabilized oscillators and transmitters. App: Note #1 This application note describes the physical principle of SAW-stabilized oscillator. Oscillator structures for one- and two-port SAW resonators are discussed.	Original	PDF	92MHz D-81617 epcos r727 epcos r705 SMD CODE L01 433.92 Mhz two-port saw resonator colpitts oscillator L03 SMD smd-transistor code book 433.92 transmitter, pcb layout smd-transistor DATA BOOK R727
2N2222A 338 Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931 Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK	OCR Scan	PDF	2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
y51 h 120c Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711 Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK	OCR Scan	PDF	500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
MHW721A2 Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503 Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA	OCR Scan	PDF	1PHX11136Q-14 MHW721A2 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
trw RF POWER TRANSISTOR Abstract: trw rf transistor trw transistors LT 9228 trw 131* RF POWER TRANSISTOR trw rf semiconductors 2023-12 TRW 52604 TP 9382 trw hybrid Text: TR W RF SEMICONDUCTORS CATALOG 1981 EUROPEAN EDITION TABLE OF CONTENTS Pages • • • • INTRODUCTION. Q U A LITY .	OCR Scan	PDF

TRANSISTOR GIGAHERTZ Search Results

TRANSISTOR GIGAHERTZ Result Highlights (5)

TRANSISTOR GIGAHERTZ Datasheets Context Search

NTC 220-11

bipolar transistor ghz s-parameter

C5750X7R1H106M

BLF6G20

RF Transistor s-parameter

C5750X7R1H106M

Basic ARM9 block diagram

NE76100

Philips Application Note ECO6907

NE76100

DN4148

electronic power generator using transistor projects

BGU7073

2N5596

BB 509 varicap diode

Motorola Mil Std. 883

failure rate Freescale

R707 433,92 MHz

R707 433,92 MHz

epcos r727

2N2222A 338

y51 h 120c

MHW721A2

trw RF POWER TRANSISTOR