IGBT FF 300 r12
Abstract: FF400R12KF4
Text: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information FF 400 R 12 KF 4 55,2 11,85 M8 screwing depth max. 8 130 31,5 114 E1 C2 C1 E2 E2 E1 C1 G1 M4 28 screwing depth max. 8 7 2,5 deep 40 53 E1 C2 16 18 G2 44 2,5 deep 57 C2
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A15/97
IGBT FF 300 r12
FF400R12KF4
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FF600R12KF4
Abstract: FF 150 R 1200 kf igbt IC600A
Text: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information FF 600 R 12 KF 4 55,2 11,85 M8 screwing depth max. 8 130 31,5 114 E1 C2 C1 E2 E2 E1 C1 G1 M4 28 screwing depth max. 8 7 2,5 deep 40 53 E1 C2 16 18 G2 44 2,5 deep 57 C2
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A13/97
FF600R12KF4
FF 150 R 1200 kf igbt
IC600A
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Untitled
Abstract: No abstract text available
Text: European PowerSemiconductor and Electronics Company Marketing Information FF 600 R 16 KF4 55,2 11,85 M8 screwing depth max. 8 130 31,5 114 E1 C2 C1 E2 E2 E1 C1 G1 M4 28 screwing depth max. 8 7 2,5 deep 40 53 E1 C2 16 18 G2 44 2,5 deep 57 C2 E1 C2 G1 G2 C1
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Untitled
Abstract: No abstract text available
Text: European PowerSemiconductor and Electronics Company Marketing Information FF 400 R 16 KF4 55,2 11,85 M8 screwing depth max. 8 130 31,5 114 E1 C2 C1 E2 E2 E1 C1 G1 M4 28 screwing depth max. 8 7 2,5 deep 40 53 E1 C2 16 18 G2 44 2,5 deep 57 C2 E1 C2 G1 G2 C1
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FD600
Abstract: No abstract text available
Text: European PowerSemiconductor and Electronics Company Marketing Information FD 600 R 16 KF4 55,2 11,85 M8 screwing depth max. 8 130 31,5 114 E1 C2 C1 E2 E2 E1 C1 G1 M4 28 screwing depth max. 8 7 2,5 deep 40 53 C2 16 18 G2 44 2,5 deep 57 E1 C2 K C1 E2 (A) E1
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LT 7210
Abstract: lt 7210 datasheet 440M 470M RA60H4452M1 RA60H4452M1-101
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA60H4452M1 RoHS Compliance, 440-520MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA60H4452M1 is a 60-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 440- to
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RA60H4452M1
440-520MHz
RA60H4452M1
60-watt
520-MHz
LT 7210
lt 7210 datasheet
440M
470M
RA60H4452M1-101
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Transistor GE 44
Abstract: tyco igbt
Text: V23990-P188-A10 flow PIM 2, 1200V, 36A Version 0601 Maximum Ratings / Höchstzulässige Werte at Tj=25°C, unless otherwise specified Parameter Input Rectifier Bridge Gleichrichterbrücke Repetitive peak reverse voltage Periodische Rückw. Spitzensperrspannung
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V23990-P188-A10
D81359
Transistor GE 44
tyco igbt
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BSM600GA120DLC
Abstract: BSM600GA120DLCS
Text: Technische Information / Technical Information IGBT-Module IGBT-Modules BSM600GA120DLC S Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom
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BSM600GA120DLC
BSM600GA120DLCS
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150AV
Abstract: BSM150GB120DLC
Text: Technische Information / Technical Information IGBT-Module IGBT-Modules BSM150GB120DLC vorläufige Daten preliminary data Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage
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BSM150GB120DLC
BSM150GB120DLC
150AV
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T0258HF65G
Abstract: No abstract text available
Text: Date:- 27 Jan, 2014 Data Sheet Issue:- A1 Advance Data Insulated Gate Bi-Polar Transistor Type T0258HF65G Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 6500 V VCES Collector – emitter voltage Tj 25°C
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T0258HF65G
T0258HF65G
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FB15R06KL4
Abstract: NTC 5e 220 to 12v trans
Text: Technische Information / Technical Information FB15R06KL4 IGBT-Module IGBT-Modules Vorläufig Preliminary Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values Diode Gleichrichter/ Diode Rectifier Periodische Rückw. Spitzensperrspannung
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FB15R06KL4
FB15R06KL4
NTC 5e
220 to 12v trans
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FB15R06KL4
Abstract: eupec fb15r06kl4 NTC 5e 842e3
Text: Technische Information / Technical Information FB15R06KL4 IGBT-Module IGBT-Modules Vorläufig Preliminary Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values Diode Gleichrichter/ Diode Rectifier Periodische Rückw. Spitzensperrspannung
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FB15R06KL4
FB15R06KL4
eupec fb15r06kl4
NTC 5e
842e3
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RA60H4047M1-101
Abstract: RA60H4047M1 lt 7245 lt 7210 400M 430M 470M amplifier 60watt module
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA60H4047M1 RoHS Compliance, 400-470MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA60H4047M1 is a 60-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 400- to
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RA60H4047M1
400-470MHz
RA60H4047M1
60-watt
470-MHz
Mar2008
RA60H4047M1-101
lt 7245
lt 7210
400M
430M
470M
amplifier 60watt module
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Untitled
Abstract: No abstract text available
Text: IRGP30B120KD-EP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Motor Control Co-Pack IGBT C Features • • • • • • • • VCES = 1200V Low VCE on Non Punch Through (NPT) Technology Low Diode VF (1.76V Typical @ 25A & 25°C)
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IRGP30B120KD-EP
O-247AD
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GE Refrigerator Compressor
Abstract: 400v 20A ultra fast recovery diode 2245-2
Text: PD - 97759 IRG7RC10FDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V IC = 9.0A, TC = 100°C Features • • • • • Low VCE on Zero VCE(on) temperature coefficient 3µs Short Circuit Capability Ultra Fast Soft Recovery Co-pak Diode
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IRG7RC10FDPbF
EIA-481
EIA-541.
EIA-481.
GE Refrigerator Compressor
400v 20A ultra fast recovery diode
2245-2
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igbt inverter welder schematic
Abstract: inverter welder schematic diagram inverter welder schematic inverter welder schematic 1 phase using igbt inverter welder schematic 1 phase MBM300GS12A inverter welder 4 schematic hitachi igbt TOSHIBA IGBT snubber igbt testing procedure
Text: Ref.No. IGBT-01 Rev.2 Hitachi, Ltd. Power & Industrial Systems Power Semiconductor Dept. Power & Industrial Systems Div. Hitachi IGBT Module Application Manual 1 Introduction to Hitachi IGBT Modules This application manual references specifications of the GS Series AW Version of Hitachi Insulated
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IGBT-01
UL94VO,
igbt inverter welder schematic
inverter welder schematic diagram
inverter welder schematic
inverter welder schematic 1 phase using igbt
inverter welder schematic 1 phase
MBM300GS12A
inverter welder 4 schematic
hitachi igbt
TOSHIBA IGBT snubber
igbt testing procedure
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IGBT 500V 35A
Abstract: IGBT 600V 35A 600V 25A Ultrafast Diode IRGPC50MD2
Text: PD - 9.1145 IRGPC50MD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Short Circuit Rated Fast CoPack IGBT C • Short circuit rated -10µs @125°C, VGE = 15V • Switching-loss rating includes all "tail" losses • HEXFREDTM soft ultrafast diodes
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IRGPC50MD2
10kHz)
O-247AC.
O-247AD)
O-247AC
IGBT 500V 35A
IGBT 600V 35A
600V 25A Ultrafast Diode
IRGPC50MD2
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2SJ144
Abstract: No abstract text available
Text: TO SH IB A 2SJ144 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL JUNCTION TYPE 2 S J 1 44 Unit in mm AUDIO FREQUENCY AMPLIFIER APPLICATIONS ANALOG SWITCH APPLICATIONS 2.1 ±0.1 CONSTANT CURRENT APPLICATIONS IMPEDANCE CONVERTER APPLICATIONS . 1.25 ± 0.1
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2SJ144
--30V)
2SJ144
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LP319
Abstract: IC 74LS00
Text: I IP 11Q IP7Q 11 LOW POW ER QUAD D IFFER EN TIA L C OM PARATORS 030 44 , OCTOBER 1987-REVISED MAY 1988 • Ultralow Power Supply Current Drain . . . Typically 6 0 /»A • Low Input Biasing Current . . . 3 nA D, J, OR N PACKAGE (TOP VIEW • Low Input Offset Current . . . ± 0 .5 nA
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1987-REVISED
LM239,
LM339,
LM2901
LP319
IC 74LS00
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Untitled
Abstract: No abstract text available
Text: Si GEC P L ES SE Y NOVEMBERS SEMI CO NDUC TOR S ADVANCE INFORMATION DS4336-5.8 GP1200FSS16S POWERLINE N-CHANNEL IGBT MODULE TYPICAL KEY PARAMETERS VCES 1600V V C E ,sat, 3.5V APPLICATIONS • High Power Switching. ■ Motor Control. ■ UPS. 'cco nt 1200A
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DS4336-5
GP1200FSS16S
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2SK2228
Abstract: Transistor 3202 1 A 60
Text: TO SH IBA SDOSSO T05H IBA FIELD EFFECT TRANSISTOR 2SK2228 QQE33Ô3 447 SILICON N CHANNEL M OS TYPE L2-tt-MOSIV 2SK2228 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. CHOPPER REGULATOR, DC-DC CONVERTER AND M OTOR DRIVE INDUSTRIAL APPLICATIONS Unit in mm
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QQE33Ã
2SK2228
T05HIBA
O-22QAB
O-220
50URCE
O-220FL
00E3b43
O-220SM
Transistor 3202 1 A 60
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transistor 80505
Abstract: No abstract text available
Text: S i GEC PLESSEY junei997 SEMI CO NDUC TOR S PRELIMINARY INFORMATION DS4715-1.3 ITS60F06 POWERLINE N-CHANNEL IGBT The ITS60F06 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for low power dissipation in a wide range of high voltage
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junei997
DS4715-1
ITS60F06
ITS60F06
transistor 80505
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IRGMC50F
Abstract: IRGMC50FD IRGMC50FU 39AF
Text: International S S Rectifier PD-9.718A IRGMC50F INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT Description Product Summary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den sities than comparable bipolar transistors, while
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IRGMC50F
IRGMC50FD
IRGMC50FU
MIL-S-19500
O-254
IRGMC50F
IRGMC50FU
39AF
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LB1824
Abstract: lc7932m Brushless Motor Speed Control lb1823 ir 3037a 2028H lb1833 3036B
Text: C o n tin u e d fro m p re v io u s p a g e Package Device Type Number ol Drawing pins and number configuration Description Features 5,0 V operation, belt drive, n o hall-effact com ponents, current limiter, LB1676M M FP 16FS 3 0 97 3-p h aso brushless, se n so rle ss F D D spindle motor driver
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LB1676M
LA5640N
LC7582A
LB1824
lc7932m
Brushless Motor Speed Control lb1823
ir 3037a
2028H
lb1833
3036B
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