Untitled
Abstract: No abstract text available
Text: Si GEC PLESSEY junei997 SEMI CO NDUC TOR S DS4651-3.2 DCR1674SZ PHASE CONTROL THYRISTOR APPLICATIONS • High Power Drives. ■ High Voltage Power Supplies. ■ DC Motor Control. KEY PARAMETERS 4200V DRM 3200A Jt AV 67000A TSM dVdt* 1000V/(is d l/d t 150A/(is
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junei997
DS4651-3
DCR1674SZ
7000A
500mA,
DCR1674SZ42
DCR1674SZ41
DCR1674SZ40
DCR1674SZ39
DCR1674SZ38ity
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Untitled
Abstract: No abstract text available
Text: S i GEC PLESSEY junei997 SEMI CO NDUC TOR S DS4241-4.2 DCR818SG PHASE CONTROL THYRISTOR APPLICATIONS • High Power Drives. ■ High Voltage Power Supplies. ■ DC Motor Control. KEY PARAMETERS V DRM _. 4800V 425A Jt AV 7500A TSM dVdt* 1600V/(is dl/dt 150A/(is
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junei997
DS4241-4
DCR818SG
DCR818SG48
DCR818SG47
DCR818SG46
DCR818SG45
DCR818SG44
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transistor 80505
Abstract: No abstract text available
Text: S i GEC PLESSEY junei997 SEMI CO NDUC TOR S PRELIMINARY INFORMATION DS4715-1.3 ITS60F06 POWERLINE N-CHANNEL IGBT The ITS60F06 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for low power dissipation in a wide range of high voltage
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junei997
DS4715-1
ITS60F06
ITS60F06
transistor 80505
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Untitled
Abstract: No abstract text available
Text: S i GEC P L ES SE Y junei997 SEMI CO NDUC TOR S DS4355-3.0 DCR1576SY PHASE CONTROL THYRISTOR APPLICATIONS • High Power Drives. ■ High Voltage Power Supplies. ■ DC Motor Control. KEY PARAMETERS 5200V DRM 1720A Jt AV 40000A TSM dVdt* 1000V/(is d l/ d t
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junei997
DS4355-3
DCR1576SY
0000A
500mA,
DCR1576SY52
DCR1576SY50
DCR1576SY48
DCR1576SY4lity
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Untitled
Abstract: No abstract text available
Text: S i GEC PLESSEY junei997 SEMI CO NDUC TOR S DS4448-3.2 DCR504ST PHASE CONTROL THYRISTOR APPLICATIONS • High Power Drives. ■ High Voltage Power Supplies. ■ DC Motor Control. KEY PARAMETERS 1400V DRM 355A Jt AV 6800A TSM dVdt* 200V/(is d l/ d t 700A/(is
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junei997
DS4448-3
DCR504ST
CR504ST14
CR504ST13
CR504ST12
CR504ST11
CR504ST10
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Untitled
Abstract: No abstract text available
Text: S i GEC P L ES SE Y junei997 SEMI CO NDUC TOR S DS4401-3.0 DCR1575SY PHASE CONTROL THYRISTOR APPLICATIONS • High Power Drives. ■ High Voltage Power Supplies. ■ DC Motor Control. KEY PARAMETERS 4200V DRM 2010A Jt AV 44000A TSM dVdt* 1000V/(is d l/ d t
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junei997
DS4401-3
DCR1575SY
4000A
500mA,
DCR1575SY42
DCR1575SY40
DCR1575SY38
DCR1575SY3lity
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Untitled
Abstract: No abstract text available
Text: GEC PLESSEY S i junei997 SEMI CO NDUC TOR S DS4648-5.2 D C R 1 6 7 5 S Z PHASE CONTROL THYRISTOR APPLICATIONS • High Power Drives. ■ High Voltage Power Supplies. ■ DC Motor Control. KEY PARAMETERS 5200V DRM 3000A Jt AV 50000A TSM dVdt* 1000V/(is d l/ d t
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junei997
DS4648-5
0000A
500mA,
DCR1675SZ52
DCR1675SZ51
DCR1675SZ50
DCR1675SZ49ty
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transistor 80505
Abstract: POWER BIPOLAR JUNCTION TRANSISTOR transistor 80505
Text: S i GEC PLESSEY junei997 SEMI CO NDUC TOR S PRELIMINARY INFORMATION DS4712-1.3 ITS13F06 POWERLINE N-CHANNEL IGBT The ITS13F06 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for low power dissipation in a wide range of high voltage
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junei997
DS4712-1
ITS13F06
ITS13F06
transistor 80505
POWER BIPOLAR JUNCTION TRANSISTOR
transistor 80505
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