tyco igbt
Abstract: V23990-P502-F NTC 150 ohm tyco igbt 214
Text: V23990-P502-F preliminary data version 0303 fast PACK 0 H, 600V Maximum Ratings / Höchstzulässige Werte Parameter Transistor Inverter Transistor Wechselrichter Collector-emitter break down voltage Kollektor-Emitter-Sperrspannung DC collector current Kollektor-Dauergleichstrom
|
Original
|
V23990-P502-F
100Rgon
D81359
RT/R25
tyco igbt
V23990-P502-F
NTC 150 ohm
tyco igbt 214
|
PDF
|
tyco igbt
Abstract: igbt tyco V23990-P501-F
Text: V23990-P501-F preliminary data version 0303 fast PACK 0 H, 600V Maximum Ratings / Höchstzulässige Werte Parameter Condition Symbol Datasheet values Unit max. Transistor Inverter Transistor Wechselrichter Collector-emitter break down voltage Kollektor-Emitter-Sperrspannung
|
Original
|
V23990-P501-F
100Rgon
D81359
RT/R25
tyco igbt
igbt tyco
V23990-P501-F
|
PDF
|
Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-05C Digital transistors built-in resistors FUMG9N TRANSISTOR WBFBP-05C (2x2×0.5) unit: mm DESCRIPTION Epitaxial planar type NPN silicon transistor (Built-in resistor type) FEATURES z Two DTC114E in a package.
|
Original
|
WBFBP-05C
WBFBP-05C
DTC114E
100MHz
|
PDF
|
marking A1 TRANSISTOR
Abstract: marking G9 transistor 05c transistor marking G9 DTC114E
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-05C Digital transistors built-in resistors FUMG9N TRANSISTOR WBFBP-05C (2x2×0.5) unit: mm DESCRIPTION Epitaxial planar type NPN silicon transistor (Built-in resistor type) FEATURES z Two DTC114E in a package.
|
Original
|
WBFBP-05C
WBFBP-05C
DTC114E
100MHz
marking A1 TRANSISTOR
marking G9
transistor 05c
transistor marking G9
|
PDF
|
2sk1060
Abstract: 2SK type transistor 2sk transistor 2sk193 2SK105 Datasheet transistor 2sk162 transistor SST 250 2SK1794 2SK104 2SK2234
Text: Transistor Field Effect Transistor Small Signal FET • 2SK type Junction type Part number Absolute maximum ratings (TA = 25 °C) Package Electrical characteristics (TA = 25 °C) VGDO (V) ID (mA) PT (mW) |Yfs1| Applications IDSS (mA) (ms) TYP. 2.5 TYP. 2SK104
|
Original
|
2SK104
2SK105
2SK162
2SK163
2SK193
2SK195
2SK505
X10679EJCV0SG00
1996P
2sk1060
2SK type
transistor 2sk
transistor 2sk193
2SK105 Datasheet
transistor 2sk162
transistor SST 250
2SK1794
2SK104
2SK2234
|
PDF
|
XC6SLX16-CSG324
Abstract: ch7301 DVI VHDL DVI VHDL xilinx ch7301 CHRONTEL 7301 Xilinx XPS Thin Film Transistor(TFT) Controller TFT controller XC4VLX25-FF668-10 a/ch7301 DVI VHDL DS695
Text: XPS Thin Film Transistor TFT Controller (v2.00a) DS695 September 16, 2009 Product Specification 0 0 Introduction LogiCORE Facts The XPS Thin Film Transistor (TFT) controller is a hardware display controller IP core capable of displaying 256k colors. The XPS TFT controller
|
Original
|
DS695
CH-7301
XC6SLX16-CSG324
ch7301 DVI VHDL
DVI VHDL
xilinx ch7301
CHRONTEL 7301 Xilinx
XPS Thin Film Transistor(TFT) Controller
TFT controller
XC4VLX25-FF668-10
a/ch7301 DVI VHDL
|
PDF
|
2SD1557
Abstract: 2SA1152 2SC4333 high hfe transistor 2SB1581 2SC4063 high hfe darlington transistor sc70 2sB1099 transistor transistor nec 2SB1099
Text: Transistor Quick Reference by Package • TO-92 Type Transistor VCEO V ~15 ~30 ~50 ~70 ~100 ~150 ~200 ~250 2SA1376 2SA1376A 2SC3478 2SC3478A 2SA1544 ~400 IC (A) ~20 m 2SC1674 ~30 m 2SC1675 2SA1005 2SA1206* TO–92 2SA988 2SA992 2SC1841 2SC1845 ~50 m ~100 m
|
Original
|
2SA1376
2SA1376A
2SC3478
2SC3478A
2SA1544
2SC1674
2SC1675
2SA1005
2SA1206*
2SA988
2SD1557
2SA1152
2SC4333
high hfe transistor
2SB1581
2SC4063
high hfe darlington transistor sc70
2sB1099 transistor
transistor
nec 2SB1099
|
PDF
|
CHDTC114E
Abstract: No abstract text available
Text: CHENMKO ENTERPRISE CO.,LTD CHEMG9PT SURFACE MOUNT Dual Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 50 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE SOT553 * Small surface mounting type. SOT-553 * High current gain.
|
Original
|
OT553
OT-553)
CHDTC114E
100OC
-40OC
50m100m
|
PDF
|
CHEMG9GP
Abstract: No abstract text available
Text: CHENMKO ENTERPRISE CO.,LTD CHEMG9GP SURFACE MOUNT Dual Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 50 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE SOT553 * Small surface mounting type. SOT-553 * High current gain.
|
Original
|
OT553
OT-553)
CHDTC114E
100OC
-40OC
50m100m
CHEMG9GP
|
PDF
|
NEX2301
Abstract: NEX2303 NEX2300 NEX230187 NEX2302 NEX230265 NEX230365
Text: N E C / CALIFORNIA NEC 1SE b42?m4 D 0001202 S .7 -3 3 r< 3 3 -o * NEX2300 SERIES 2.3 GHz POWER OSCILLATOR TRANSISTOR FEATURES DESCRIPTION AND APPLICATIONS • HIG H POWER: 3.2 W AT 2.3 GHz The NEX2300 series is an NPN transistor using NEC’s ad vanced Stepped Electrode Transistor SET structure with
|
OCR Scan
|
NEX2300
NEX2300
NEX2301
NEX2302
NEX2303
NEX230365
NEX230187
NEX230265
|
PDF
|
ic TT 2222
Abstract: transistor tt 2222 BLY89A TT 2222 npn Transistor bly89a TT 2222 npn 2222 transistor yl 3710 dfv 36 mb 3712
Text: N AMER PHILIPS/DISCRETE GbE D 86D 0 1910 ^5 3 = 1 3 1 D T - G o m m a 3 3 5 -« BLY89A V.H.F. POW ER TRANSISTOR N-P-N epitaxial planar transistor intended for use in class-A, B and C operated mobile, industrial and military transmitters with a supply voltage of 13,5 V. The transistor is resistance stabilized. Every
|
OCR Scan
|
BLY89A
PL-25W
ic TT 2222
transistor tt 2222
BLY89A
TT 2222 npn
Transistor bly89a
TT 2222
npn 2222 transistor
yl 3710
dfv 36
mb 3712
|
PDF
|
Response AA0482
Abstract: 49/Response AA0482
Text: SECTION 2 SPECIFICATIONS INTRODUCTION The DSP56303 is fabricated in high density CMOS with Transistor-Transistor Logic TTL compatible inputs and outputs. The DSP56303 specifications are preliminary and are from design simulations, and may not be fully tested or guaranteed at this
|
OCR Scan
|
DSP56303
Response AA0482
49/Response AA0482
|
PDF
|
RCA H 541
Abstract: 2T312 2N2654 AS218 transistor gex 74a diode germanium 1n283 K3004 TFK diode ac132 TI-483
Text: $ 1.50 Cat. No. SSH-6 /U*A TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York SIXTH EDITION FIRST PRINTING — FEBRUARY, 1965 TRANSISTOR SUBSTITUTION HANDBOOK
|
OCR Scan
|
|
PDF
|
q901
Abstract: No abstract text available
Text: Transistors Digital Transistor Common Emitter Dual Transistors UMG9N/FMG9A •Features 1) Two DTC114E digital transistors in a UMT, SMT package. 2) M ounting cost and area can be cut in half. •S tructure Epitaxial planar type NPN silicon transistor (Built-in resistor type)
|
OCR Scan
|
DTC114E
SC-88A
SC-74A
100/j
q901
|
PDF
|
|
|
1e47
Abstract: BUK638-500B SI3090
Text: PHILIPS : Philips Semiconductors Product Specification PowerMOS transistor G E N E R A L DESCRIPTION N-channel enhancement mode fiekJ-effect power transistor In a plastic envelope. F R E D F E T witn fast recovery reverse diode, particularly suitable for motor control applications, eg. in
|
OCR Scan
|
BUK638-500B
Tt-25
1e47
BUK638-500B
SI3090
|
PDF
|
G33S
Abstract: I10KQ
Text: UMG9N/FMG9A b ÿ > !s7>. £ /Transistors FMG9A S7 t /Dual Mini-Mold Transistor Epitaxal Planar NPN Silicon Transistor < —£ F ÿ ' f M/Inverter Driver 1 U M T SC-70), SM T (SC-59) t W i — FMG9A UMG9N Z .9 ± 0 .2 z.o±o.z 2 m < V T -'y $ Jis h ? > 9 * $
|
OCR Scan
|
SC-70)
SC-59)
SC-74A
G33S
I10KQ
|
PDF
|
Untitled
Abstract: No abstract text available
Text: FMG9A Transistor, digitai, dual, NPN, with 1 resistor Features Dimensions Units : mm • available in SM T5 (FMT, SC-74A) packages • package marking: G9 • package contains two interconnected NPN digital transistors (DTC114EKA) 2.9 ± 0.2 1.9 ± 0 .2
|
OCR Scan
|
SC-74A)
DTC114EKA)
|
PDF
|
2SD1312
Abstract: w18 transistor
Text: SEC j m ^ iv r x Silicon Transistor A 2SD1312 N PN X U =1 > b =7 > i> 7*9 NPN Silicon Epitaxial Transistor Audio Frequency Power Amplifier mm / P A C K A G E # * / FEATURES DIMENSIONS Unit : mm O ¿T — T ' -i 7Ì" 7 > 7 i^<7) K -7 j o / J ^ T 'P t o è <, B i t HE T- r o
|
OCR Scan
|
2SD1312
SB984Â
PWS10
cycleg50
io--00
2SD1312
w18 transistor
|
PDF
|
Untitled
Abstract: No abstract text available
Text: International ! r]Rectifier PD-9.718A IRGMC50F INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT Description Product Summary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den sities than comparable bipolar transistors, while
|
OCR Scan
|
IRGMC50F
IRGMC50FD
IRGMC50FU
O-254
4fiSS45S
MIL-S-19500
|
PDF
|
Untitled
Abstract: No abstract text available
Text: International pm a Hü Rectifier_ IRGMC50U INSULATED GATE BIPOLAR TRANSISTOR UltraFast™ IGBT Description Product Summary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den sities than comparable bipolar transistors, while
|
OCR Scan
|
IRGMC50U
O-254
IRGMC50UD
IRGMC50UU
G-105
|
PDF
|
IRGMC50F
Abstract: IRGMC50FD IRGMC50FU 39AF
Text: International S S Rectifier PD-9.718A IRGMC50F INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT Description Product Summary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den sities than comparable bipolar transistors, while
|
OCR Scan
|
IRGMC50F
IRGMC50FD
IRGMC50FU
MIL-S-19500
O-254
IRGMC50F
IRGMC50FU
39AF
|
PDF
|
transistor 9721
Abstract: 9721 mosfet to3
Text: International S Rectifier PD-9.721 A IRGAC30F INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT Description Product Summary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den sities than comparable bipolar transistors, while
|
OCR Scan
|
IRGAC30F
DD10bl5
transistor 9721
9721
mosfet to3
|
PDF
|
T3D 87
Abstract: t3d 99 G-100 IRGMC50U
Text: International [^Rectifier PD-9.719A IRGMC50U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT D escription Product Sum m ary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den sities than comparable bipolar transistors, while
|
OCR Scan
|
IRGMC50U
IRGMC50U
IRGMC50UD
IRGMC50UU
MIL-S-19500
O-254
G-105
T3D 87
t3d 99
G-100
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PD - 9.695A International IM lRectifier IRGPC50F INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT Features • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency
|
OCR Scan
|
IRGPC50F
10kHz)
O-247AC
|
PDF
|
