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    TRANSISTOR G9 Search Results

    TRANSISTOR G9 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    CA3082 Rochester Electronics LLC Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    CA3081F Rochester Electronics LLC Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR G9 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    tyco igbt

    Abstract: V23990-P502-F NTC 150 ohm tyco igbt 214
    Text: V23990-P502-F preliminary data version 0303 fast PACK 0 H, 600V Maximum Ratings / Höchstzulässige Werte Parameter Transistor Inverter Transistor Wechselrichter Collector-emitter break down voltage Kollektor-Emitter-Sperrspannung DC collector current Kollektor-Dauergleichstrom


    Original     		PDF V23990-P502-F 100Rgon D81359 RT/R25 tyco igbt V23990-P502-F NTC 150 ohm tyco igbt 214

    tyco igbt

    Abstract: igbt tyco V23990-P501-F
    Text: V23990-P501-F preliminary data version 0303 fast PACK 0 H, 600V Maximum Ratings / Höchstzulässige Werte Parameter Condition Symbol Datasheet values Unit max. Transistor Inverter Transistor Wechselrichter Collector-emitter break down voltage Kollektor-Emitter-Sperrspannung


    Original     		PDF V23990-P501-F 100Rgon D81359 RT/R25 tyco igbt igbt tyco V23990-P501-F

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-05C Digital transistors built-in resistors FUMG9N TRANSISTOR WBFBP-05C (2x2×0.5) unit: mm DESCRIPTION Epitaxial planar type NPN silicon transistor (Built-in resistor type) FEATURES z Two DTC114E in a package.


    Original     		PDF WBFBP-05C WBFBP-05C DTC114E 100MHz

    marking A1 TRANSISTOR

    Abstract: marking G9 transistor 05c transistor marking G9 DTC114E
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-05C Digital transistors built-in resistors FUMG9N TRANSISTOR WBFBP-05C (2x2×0.5) unit: mm DESCRIPTION Epitaxial planar type NPN silicon transistor (Built-in resistor type) FEATURES z Two DTC114E in a package.


    Original     		PDF WBFBP-05C WBFBP-05C DTC114E 100MHz marking A1 TRANSISTOR marking G9 transistor 05c transistor marking G9

    2sk1060

    Abstract: 2SK type transistor 2sk transistor 2sk193 2SK105 Datasheet transistor 2sk162 transistor SST 250 2SK1794 2SK104 2SK2234
    Text: Transistor Field Effect Transistor Small Signal FET • 2SK type Junction type Part number Absolute maximum ratings (TA = 25 °C) Package Electrical characteristics (TA = 25 °C) VGDO (V) ID (mA) PT (mW) |Yfs1| Applications IDSS (mA) (ms) TYP. 2.5 TYP. 2SK104


    Original     		PDF 2SK104 2SK105 2SK162 2SK163 2SK193 2SK195 2SK505 X10679EJCV0SG00 1996P 2sk1060 2SK type transistor 2sk transistor 2sk193 2SK105 Datasheet transistor 2sk162 transistor SST 250 2SK1794 2SK104 2SK2234

    XC6SLX16-CSG324

    Abstract: ch7301 DVI VHDL DVI VHDL xilinx ch7301 CHRONTEL 7301 Xilinx XPS Thin Film Transistor(TFT) Controller TFT controller XC4VLX25-FF668-10 a/ch7301 DVI VHDL DS695
    Text: XPS Thin Film Transistor TFT Controller (v2.00a) DS695 September 16, 2009 Product Specification 0 0 Introduction LogiCORE Facts The XPS Thin Film Transistor (TFT) controller is a hardware display controller IP core capable of displaying 256k colors. The XPS TFT controller


    Original     		PDF DS695 CH-7301 XC6SLX16-CSG324 ch7301 DVI VHDL DVI VHDL xilinx ch7301 CHRONTEL 7301 Xilinx XPS Thin Film Transistor(TFT) Controller TFT controller XC4VLX25-FF668-10 a/ch7301 DVI VHDL

    2SD1557

    Abstract: 2SA1152 2SC4333 high hfe transistor 2SB1581 2SC4063 high hfe darlington transistor sc70 2sB1099 transistor transistor nec 2SB1099
    Text: Transistor Quick Reference by Package • TO-92 Type Transistor VCEO V ~15 ~30 ~50 ~70 ~100 ~150 ~200 ~250 2SA1376 2SA1376A 2SC3478 2SC3478A 2SA1544 ~400 IC (A) ~20 m 2SC1674 ~30 m 2SC1675 2SA1005 2SA1206* TO–92 2SA988 2SA992 2SC1841 2SC1845 ~50 m ~100 m


    Original     		PDF 2SA1376 2SA1376A 2SC3478 2SC3478A 2SA1544 2SC1674 2SC1675 2SA1005 2SA1206* 2SA988 2SD1557 2SA1152 2SC4333 high hfe transistor 2SB1581 2SC4063 high hfe darlington transistor sc70 2sB1099 transistor transistor nec 2SB1099

    CHDTC114E

    Abstract: No abstract text available
    Text: CHENMKO ENTERPRISE CO.,LTD CHEMG9PT SURFACE MOUNT Dual Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 50 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE SOT553 * Small surface mounting type. SOT-553 * High current gain.


    Original     		PDF OT553 OT-553) CHDTC114E 100OC -40OC 50m100m

    CHEMG9GP

    Abstract: No abstract text available
    Text: CHENMKO ENTERPRISE CO.,LTD CHEMG9GP SURFACE MOUNT Dual Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 50 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE SOT553 * Small surface mounting type. SOT-553 * High current gain.


    Original     		PDF OT553 OT-553) CHDTC114E 100OC -40OC 50m100m CHEMG9GP

    NEX2301

    Abstract: NEX2303 NEX2300 NEX230187 NEX2302 NEX230265 NEX230365
    Text: N E C / CALIFORNIA NEC 1SE b42?m4 D 0001202 S .7 -3 3 r< 3 3 -o * NEX2300 SERIES 2.3 GHz POWER OSCILLATOR TRANSISTOR FEATURES DESCRIPTION AND APPLICATIONS • HIG H POWER: 3.2 W AT 2.3 GHz The NEX2300 series is an NPN transistor using NEC’s ad­ vanced Stepped Electrode Transistor SET structure with


    OCR Scan     		PDF NEX2300 NEX2300 NEX2301 NEX2302 NEX2303 NEX230365 NEX230187 NEX230265

    ic TT 2222

    Abstract: transistor tt 2222 BLY89A TT 2222 npn Transistor bly89a TT 2222 npn 2222 transistor yl 3710 dfv 36 mb 3712
    Text: N AMER PHILIPS/DISCRETE GbE D 86D 0 1910 ^5 3 = 1 3 1 D T - G o m m a 3 3 5 -« BLY89A V.H.F. POW ER TRANSISTOR N-P-N epitaxial planar transistor intended for use in class-A, B and C operated mobile, industrial and military transmitters with a supply voltage of 13,5 V. The transistor is resistance stabilized. Every


    OCR Scan     		PDF BLY89A PL-25W ic TT 2222 transistor tt 2222 BLY89A TT 2222 npn Transistor bly89a TT 2222 npn 2222 transistor yl 3710 dfv 36 mb 3712

    Response AA0482

    Abstract: 49/Response AA0482
    Text: SECTION 2 SPECIFICATIONS INTRODUCTION The DSP56303 is fabricated in high density CMOS with Transistor-Transistor Logic TTL compatible inputs and outputs. The DSP56303 specifications are preliminary and are from design simulations, and may not be fully tested or guaranteed at this


    OCR Scan     		PDF DSP56303 Response AA0482 49/Response AA0482

    RCA H 541

    Abstract: 2T312 2N2654 AS218 transistor gex 74a diode germanium 1n283 K3004 TFK diode ac132 TI-483
    Text: $ 1.50 Cat. No. SSH-6 /U*A TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York SIXTH EDITION FIRST PRINTING — FEBRUARY, 1965 TRANSISTOR SUBSTITUTION HANDBOOK


    OCR Scan     		PDF

    q901

    Abstract: No abstract text available
    Text: Transistors Digital Transistor Common Emitter Dual Transistors UMG9N/FMG9A •Features 1) Two DTC114E digital transistors in a UMT, SMT package. 2) M ounting cost and area can be cut in half. •S tructure Epitaxial planar type NPN silicon transistor (Built-in resistor type)


    OCR Scan     		PDF DTC114E SC-88A SC-74A 100/j q901

    1e47

    Abstract: BUK638-500B SI3090
    Text: PHILIPS : Philips Semiconductors Product Specification PowerMOS transistor G E N E R A L DESCRIPTION N-channel enhancement mode fiekJ-effect power transistor In a plastic envelope. F R E D F E T witn fast recovery reverse diode, particularly suitable for motor control applications, eg. in


    OCR Scan     		PDF BUK638-500B Tt-25 1e47 BUK638-500B SI3090

    G33S

    Abstract: I10KQ
    Text: UMG9N/FMG9A b ÿ > !s7>. £ /Transistors FMG9A S7 t /Dual Mini-Mold Transistor Epitaxal Planar NPN Silicon Transistor < —£ F ÿ ' f M/Inverter Driver 1 U M T SC-70), SM T (SC-59) t W i — FMG9A UMG9N Z .9 ± 0 .2 z.o±o.z 2 m < V T -'y $ Jis h ? > 9 * $


    OCR Scan     		PDF SC-70) SC-59) SC-74A G33S I10KQ

    Untitled

    Abstract: No abstract text available
    Text: FMG9A Transistor, digitai, dual, NPN, with 1 resistor Features Dimensions Units : mm • available in SM T5 (FMT, SC-74A) packages • package marking: G9 • package contains two interconnected NPN digital transistors (DTC114EKA) 2.9 ± 0.2 1.9 ± 0 .2


    OCR Scan     		PDF SC-74A) DTC114EKA)

    2SD1312

    Abstract: w18 transistor
    Text: SEC j m ^ iv r x Silicon Transistor A 2SD1312 N PN X U =1 > b =7 > i> 7*9 NPN Silicon Epitaxial Transistor Audio Frequency Power Amplifier mm / P A C K A G E # * / FEATURES DIMENSIONS Unit : mm O ¿T — T ' -i 7Ì" 7 > 7 i^<7) K -7 j o / J ^ T 'P t o è <, B i t HE T- r o


    OCR Scan     		PDF 2SD1312 SB984Â PWS10 cycleg50 io--00 2SD1312 w18 transistor

    Untitled

    Abstract: No abstract text available
    Text: International ! r]Rectifier PD-9.718A IRGMC50F INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT Description Product Summary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den­ sities than comparable bipolar transistors, while


    OCR Scan     		PDF IRGMC50F IRGMC50FD IRGMC50FU O-254 4fiSS45S MIL-S-19500

    Untitled

    Abstract: No abstract text available
    Text: International pm a Hü Rectifier_ IRGMC50U INSULATED GATE BIPOLAR TRANSISTOR UltraFast™ IGBT Description Product Summary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den­ sities than comparable bipolar transistors, while


    OCR Scan     		PDF IRGMC50U O-254 IRGMC50UD IRGMC50UU G-105

    IRGMC50F

    Abstract: IRGMC50FD IRGMC50FU 39AF
    Text: International S S Rectifier PD-9.718A IRGMC50F INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT Description Product Summary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den­ sities than comparable bipolar transistors, while


    OCR Scan     		PDF IRGMC50F IRGMC50FD IRGMC50FU MIL-S-19500 O-254 IRGMC50F IRGMC50FU 39AF

    transistor 9721

    Abstract: 9721 mosfet to3
    Text: International S Rectifier PD-9.721 A IRGAC30F INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT Description Product Summary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den­ sities than comparable bipolar transistors, while


    OCR Scan     		PDF IRGAC30F DD10bl5 transistor 9721 9721 mosfet to3

    T3D 87

    Abstract: t3d 99 G-100 IRGMC50U
    Text: International [^Rectifier PD-9.719A IRGMC50U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT D escription Product Sum m ary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den­ sities than comparable bipolar transistors, while


    OCR Scan     		PDF IRGMC50U IRGMC50U IRGMC50UD IRGMC50UU MIL-S-19500 O-254 G-105 T3D 87 t3d 99 G-100

    Untitled

    Abstract: No abstract text available
    Text: PD - 9.695A International IM lRectifier IRGPC50F INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT Features • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency


    OCR Scan     		PDF IRGPC50F 10kHz) O-247AC