MN1280
Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor
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BUTW92
Abstract: No abstract text available
Text: BUTW92 HIGH CURRENT NPN SILICON TRANSISTOR • ■ SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR APPLICATIONS: MOTOR CONTROL ■ HIGH FREQUENCY AND EFFICIENCY CONVERTERS ■ DESCRIPTION High current, high speed transistor suited for power conversion applications, high efficency
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BUTW92
O-247
BUTW92
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butw92
Abstract: No abstract text available
Text: BUTW92 HIGH CURRENT NPN SILICON TRANSISTOR • ■ STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR APPLICATIONS: MOTOR CONTROL ■ HIGH FREQUENCY AND EFFICIENCY CONVERTERS ■ 3 DESCRIPTION High current, high speed transistor suited for power conversion applications, high efficency
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BUTW92
O-247
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BUTW92
Abstract: No abstract text available
Text: BUTW92 HIGH CURRENT NPN SILICON TRANSISTOR • ■ STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR APPLICATIONS: MOTOR CONTROL ■ HIGH FREQUENCY AND EFFICIENCY CONVERTERS ■ 3 DESCRIPTION High current, high speed transistor suited for power conversion applications, high efficency
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BUTW92
O-247
BUTW92
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F5 MARK
Abstract: marking f3 sot-23 KST1009F1 KST1009F2 KST1009F3 KST1009F4 KST1009F5 marking code F3
Text: KST1009F1/F2/F3/F4/F5 KST1009F1/F2/F3/F4/F5 AM/FM RF Amplifier Transistor 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage
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KST1009F1/F2/F3/F4/F5
OT-23
F5 MARK
marking f3 sot-23
KST1009F1
KST1009F2
KST1009F3
KST1009F4
KST1009F5
marking code F3
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RN1901FS
Abstract: RN1902FS RN1903FS RN1904FS RN1905FS RN1906FS RN2901FS RN2906FS
Text: RN1901FS~RN1906FS TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor Built-in Transistor) RN1901FS,RN1902FS,RN1903FS RN1904FS,RN1905FS,RN1906FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm
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RN1901FS
RN1906FS
RN1902FS
RN1903FS
RN1904FS
RN1905FS
RN2901FS
RN2906FS
RN1903FS
RN1906FS
RN2906FS
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Untitled
Abstract: No abstract text available
Text: RN1901FS~RN1906FS TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor Built-in Transistor) RN1901FS,RN1902FS,RN1903FS RN1904FS,RN1905FS,RN1906FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm
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RN1901FS
RN1906FS
RN1902FS
RN1903FS
RN1904FS
RN1905FS
RN2901FS
RN2906FS
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RN1903FS
Abstract: RN1902FS RN1901FS RN1904FS RN1905FS RN1906FS RN2901FS RN2906FS
Text: RN1901FS~RN1906FS TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor Built-in Transistor) RN1901FS,RN1902FS,RN1903FS RN1904FS,RN1905FS,RN1906FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm
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RN1901FS
RN1906FS
RN1902FS
RN1903FS
RN1904FS
RN1905FS
RN2901FS
RN2906FS
RN1903FS
RN1906FS
RN2906FS
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Untitled
Abstract: No abstract text available
Text: RN1901FS~RN1906FS TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor Built-in Transistor) RN1901FS,RN1902FS,RN1903FS RN1904FS,RN1905FS,RN1906FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm
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RN1901FS
RN1906FS
RN1902FS
RN1903FS
RN1904FS
RN1905FS
RN2901FS
RN2906FS
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TRANSISTOR 0835
Abstract: No abstract text available
Text: BU508DFI HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR • ■ ■ ■ STMicroelectronics PREFERRED SALESTYPE HIGH VOLTAGE CAPABILITY > 1500 V NPN TRANSISTOR WITH INTEGRATED FREEWHEELING DIODE INSULATED PACKAGE FOR EASY MOUNTING (U.L. COMPLIANT)
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BU508DFI
BU508DFI
ISOWATT218
TRANSISTOR 0835
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TRANSISTOR 0835
Abstract: No abstract text available
Text: BUH515D HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR • ■ ■ ■ STMicroelectronics PREFERRED SALESTYPE HIGH VOLTAGE CAPABILITY FULLY INSULATED PACKAGE U.L. COMPLIANT FOR EASY MOUNTING NPN TRANSISTOR WITH INTEGRATED FREEWHEELING DIODE 3 APPLICATIONS:
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BUH515D
BUH515D
ISOWATT218
TRANSISTOR 0835
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BU508DFI
Abstract: No abstract text available
Text: BU508DFI HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR • ■ ■ ■ STMicroelectronics PREFERRED SALESTYPE HIGH VOLTAGE CAPABILITY > 1500 V NPN TRANSISTOR WITH INTEGRATED FREEWHEELING DIODE FULLY INSULATED PACKAGE (U.L. COMPLIANT) FOR EASY MOUNTING
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BU508DFI
ISOWATT218
BU508DFI
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BUH515D
Abstract: 2025 ct
Text: BUH515D HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR • ■ ■ ■ STMicroelectronics PREFERRED SALESTYPE HIGH VOLTAGE CAPABILITY FULLY INSULATED PACKAGE U.L. COMPLIANT FOR EASY MOUNTING NPN TRANSISTOR WITH INTEGRATED FREEWHEELING DIODE 3 APPLICATIONS:
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BUH515D
ISOWATT218
BUH515D
2025 ct
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china tv schematic diagram
Abstract: TRANSISTOR 0835 colour tv circuit diagram china tv power diagram BU508DFI
Text: BU508DFI HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR • ■ ■ ■ STMicroelectronics PREFERRED SALESTYPE HIGH VOLTAGE CAPABILITY > 1500 V NPN TRANSISTOR WITH INTEGRATED FREEWHEELING DIODE FULLY INSULATED PACKAGE (U.L. COMPLIANT) FOR EASY MOUNTING
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BU508DFI
ISOWATT218
china tv schematic diagram
TRANSISTOR 0835
colour tv circuit diagram
china tv power diagram
BU508DFI
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Untitled
Abstract: No abstract text available
Text: NPN EPITAXIAL SILICO N TRANSISTOR KST1009F1/F2/F3/F4/F5 AM/FM RF AMPLIFIER TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic j | | | Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation
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KST1009F1/F2/F3/F4/F5
100MHz
KST1009F1
KST1009F2
KST1009F3
KST1009F4
KST1009F5
KST1009F1
KST1009F2
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Untitled
Abstract: No abstract text available
Text: NPN EPITAXIAL SILICON TRANSISTOR KST1009F1/F2/F3/F4/F5 AM/FM RF AMPLIFIER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25°C Characteristic Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation
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KST1009F1/F2/F3/F4/F5
OT-23
KST1009F1
KST1009F2
KST1009F3
KST1009F4
KST1009F5
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2sb504
Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle
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transistor f1
Abstract: MARKING CODE f5 F5 marking code F5 MARK MARKING CODE CCB am fm rf amplifier marking CODE F2 f1 transistor mark KST1009F2 KST1009F3
Text: NPN EPITAXIAL SILICON TRANSISTOR KST1009F1 /F2/F3/F4/F5 AM/FM RF AMPLIFIER TRANSISTOR SO T-23 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol C ollector-Base Voltage C ollector-E m ltter Voltage Em itter-Base Voltage C ollector Current C ollector D issipation
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KST1009F1
OT-23
KST1009F1
KST1009F2
KST1009F3
KST1009F4
KST1009F5
transistor f1
MARKING CODE f5
F5 marking code
F5 MARK
MARKING CODE CCB
am fm rf amplifier
marking CODE F2
f1 transistor mark
KST1009F2
KST1009F3
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Untitled
Abstract: No abstract text available
Text: Æ T S G S - T H O M S O N n lsi S IIL[iCTISÎ iD©S BUTW92 HIGH CURRENT NPN SILICON TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . NPN TRANSISTOR APPLICATIONS: . MOTOR CONTROL . HIGH FREQUENCY AND EFFICIENCY CONVERTERS DESCRIPTION High current, high speed transistor suited for
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BUTW92
P025P
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NEC 1357
Abstract: LA 8873 TRANSISTOR C 4460
Text: DATA SHEET SILICON TRANSISTOR 2SC5004 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5004 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in m illim e te rs OSC/MIX. It is suitable for a high density surface mount assem bly since the
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2SC5004
2SC5004
NEC 1357
LA 8873
TRANSISTOR C 4460
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PH2856-150
Abstract: PH2856
Text: 4flE D M/A-COn P H 0 m S b 4 E E a S □ Q Q D 7 7 S 4TT • I1AP T -^ 3 ^ f3 PH2856-150 Microwave Pulsed Power Transistor Design Characteristics • High Efficiency Transistor Geometry • Narrowband 2.856 ± 0.005 GHz Operation • Common Base Configuration
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PH2856-150
PH2856
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1BW TRANSISTOR
Abstract: F300R06KF R600
Text: 7 =3 f - 3 / F300R 06K F EUPEC SEE • 3M 032T7 Elektrische Eigenschaften Electrical properties Höchstzulässige Werte V ces Maximum rated values 600 V 300 A le 2 ^ O O O O B M fl Thermische Eigenschaften Transistor Transistor D HUPEC Thermal properties DC, pro Baustein/p e r module
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F300R06KF
3M032T7
34D32CI7
1BW TRANSISTOR
F300R06KF
R600
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transistor 131 8D
Abstract: transistor k 3728 QBE+61.2+dp2
Text: N AMER PHILIPS/DISCRETE 86D OLE D T' 01928 ^53=131 DDimbt. 5 BLY90 A V.H.F. POWER TRANSISTOR N-P-N epitaxial planar transistor intended for use in class-A, B and C operated mobile, industrial and m ilitary transmitters w ith a supply voltage o f 12,5 V . The transistor is resistance stabilized. Every tran
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BLY90
transistor 131 8D
transistor k 3728
QBE+61.2+dp2
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transistor buv 90
Abstract: BCY 85 Q60203-Y66 BCY 66
Text: N PN -Transistor fü r rauscharm e N F -V o rs tu fe n BCY 66 BCY 66 ist ein epitaktischer NPN-Silizium-Planar-Transistor im Gehäuse 18 A3 DIN 41876 TO-18 . Der Kollektor ist mit dem Gehäuse elektrisch verbunden. Der Transistor ist für besonders rauscharme NF-Vorstufen vorgesehen. (Komplementärtransistor dazu B C Y 67).
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Q60203-Y66
transistor buv 90
BCY 85
Q60203-Y66
BCY 66
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