TRANSISTOR F3 Search Results

TRANSISTOR F3 Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTOR F3 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
MN1280 Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor	Original		PDF
oz960 Abstract: khb9D5N20P MB4213 KIA78pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors	Original	KIA7900PI TC7SH04FU KIC7SH04FU SC604* KAC3301QN M51943 KIA7042AP/AF TC7SH08FU KIC7SH08FU LT1937 oz960 khb9D5N20P MB4213 KIA78pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j	PDF
BUTW92 Abstract: No abstract text available Text: BUTW92 HIGH CURRENT NPN SILICON TRANSISTOR • ■ SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR APPLICATIONS: MOTOR CONTROL ■ HIGH FREQUENCY AND EFFICIENCY CONVERTERS ■ DESCRIPTION High current, high speed transistor suited for power conversion applications, high efficency	Original	BUTW92 O-247 BUTW92	PDF
BUTW92 Abstract: No abstract text available Text: BUTW92 HIGH CURRENT NPN SILICON TRANSISTOR • ■ SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR APPLICATIONS: ■ MOTOR CONTROL ■ HIGH FREQUENCY AND EFFICIENCY CONVERTERS DESCRIPTION High current, high speed transistor suited for power conversion applications, high efficency	Original	BUTW92 O-247 BUTW92	PDF
butw92 Abstract: No abstract text available Text: BUTW92 HIGH CURRENT NPN SILICON TRANSISTOR • ■ STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR APPLICATIONS: MOTOR CONTROL ■ HIGH FREQUENCY AND EFFICIENCY CONVERTERS ■ 3 DESCRIPTION High current, high speed transistor suited for power conversion applications, high efficency	Original	BUTW92 O-247 butw92	PDF
BUTW92 Abstract: No abstract text available Text: BUTW92 HIGH CURRENT NPN SILICON TRANSISTOR • ■ STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR APPLICATIONS: MOTOR CONTROL ■ HIGH FREQUENCY AND EFFICIENCY CONVERTERS ■ 3 DESCRIPTION High current, high speed transistor suited for power conversion applications, high efficency	Original	BUTW92 O-247 BUTW92	PDF
F5 MARK Abstract: marking f3 sot-23 KST1009F1 KST1009F2 KST1009F3 KST1009F4 KST1009F5 marking code F3 Text: KST1009F1/F2/F3/F4/F5 KST1009F1/F2/F3/F4/F5 AM/FM RF Amplifier Transistor 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage	Original	KST1009F1/F2/F3/F4/F5 OT-23 F5 MARK marking f3 sot-23 KST1009F1 KST1009F2 KST1009F3 KST1009F4 KST1009F5 marking code F3	PDF
Untitled Abstract: No abstract text available Text: NPN EPITAXIAL SILICON TRANSISTOR KST1009F1/F2/F3/F4/F5 AM/FM RF AMPLIFIER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25°°C Characteristic Symbol Rating Unit 50 25 5 50 350 150 V V V mA mW °C VCBO VCEO VEBO IC PC T STG Collector-Base Voltage Collector-Emitter Voltage	Original	KST1009F1/F2/F3/F4/F5 OT-23 KST1009F1 KST1009F2 KST1009F3 KST1009F4 KST1009F5	PDF
RN1901FS Abstract: RN1902FS RN1903FS RN1904FS RN1905FS RN1906FS RN2901FS RN2906FS Text: RN1901FS~RN1906FS TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor Built-in Transistor) RN1901FS,RN1902FS,RN1903FS RN1904FS,RN1905FS,RN1906FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm	Original	RN1901FS RN1906FS RN1902FS RN1903FS RN1904FS RN1905FS RN2901FS RN2906FS RN1903FS RN1906FS RN2906FS	PDF
Untitled Abstract: No abstract text available Text: RN1901FS~RN1906FS TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor Built-in Transistor) RN1901FS,RN1902FS,RN1903FS RN1904FS,RN1905FS,RN1906FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm	Original	RN1901FS RN1906FS RN1902FS RN1903FS RN1904FS RN1905FS RN2901FS RN2906FS	PDF
RN1903FS Abstract: RN1902FS RN1901FS RN1904FS RN1905FS RN1906FS RN2901FS RN2906FS Text: RN1901FS~RN1906FS TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor Built-in Transistor) RN1901FS,RN1902FS,RN1903FS RN1904FS,RN1905FS,RN1906FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm	Original	RN1901FS RN1906FS RN1902FS RN1903FS RN1904FS RN1905FS RN2901FS RN2906FS RN1903FS RN1906FS RN2906FS	PDF
Untitled Abstract: No abstract text available Text: RN1901FS~RN1906FS TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor Built-in Transistor) RN1901FS,RN1902FS,RN1903FS RN1904FS,RN1905FS,RN1906FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm	Original	RN1901FS RN1906FS RN1902FS RN1903FS RN1904FS RN1905FS RN2901FS RN2906FS	PDF
Untitled Abstract: No abstract text available Text: RN1901FS~RN1906FS TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor Built-in Transistor) RN1901FS,RN1902FS,RN1903FS RN1904FS,RN1905FS,RN1906FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm	Original	RN1901FS RN1906FS RN1902FS RN1903FS RN1904FS RN1905FS RN1902FS	PDF
Untitled Abstract: No abstract text available Text: TRANSISTOR M O D U L E three PHASES BRIDGE TYPE QF30AA40/60 Q F30AA is a six pack Darlington power transistor module which has six transistors connected in three phase bridge configuration. Each transistor has a reverse paralleled fast recovery diode. The	OCR Scan	QF30AA40/60 F30AA 400/600V DDD21bS QF30AA	PDF

Untitled Abstract: No abstract text available Text: NPN EPITAXIAL SILICON TRANSISTOR KST1009F1/F2/F3/F4/F5 AM/FM RF AMPLIFIER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25°C Characteristic Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation	OCR Scan	KST1009F1/F2/F3/F4/F5 OT-23 KST1009F1 KST1009F2 KST1009F3 KST1009F4 KST1009F5	PDF
2sb504 Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52 Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle	OCR Scan		PDF
Untitled Abstract: No abstract text available Text: NPN EPITAXIAL SILICON TRANSISTOR KST1009F1 /F2/F3/F4/F5 AM/FM RF AMPLIFIER TRANSISTOR ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol C ollector-B ase Voltage C ollector-E m ltter Voltage Em itter-Base Voltage C ollecto r C urrent C ollecto r D issipation	OCR Scan	KST1009F1 KST1009F1 KST1009F2 KST1009F3 KST1009F4 KST1009F5 KST1009F2 KST1009F3 KST1009F4	PDF
transistor f1 Abstract: MARKING CODE f5 F5 marking code F5 MARK MARKING CODE CCB am fm rf amplifier marking CODE F2 f1 transistor mark KST1009F2 KST1009F3 Text: NPN EPITAXIAL SILICON TRANSISTOR KST1009F1 /F2/F3/F4/F5 AM/FM RF AMPLIFIER TRANSISTOR SO T-23 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol C ollector-Base Voltage C ollector-E m ltter Voltage Em itter-Base Voltage C ollector Current C ollector D issipation	OCR Scan	KST1009F1 OT-23 KST1009F1 KST1009F2 KST1009F3 KST1009F4 KST1009F5 transistor f1 MARKING CODE f5 F5 marking code F5 MARK MARKING CODE CCB am fm rf amplifier marking CODE F2 f1 transistor mark KST1009F2 KST1009F3	PDF
Untitled Abstract: No abstract text available Text: Æ T S G S - T H O M S O N n lsi S IIL[iCTISÎ iD©S BUTW92 HIGH CURRENT NPN SILICON TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . NPN TRANSISTOR APPLICATIONS: . MOTOR CONTROL . HIGH FREQUENCY AND EFFICIENCY CONVERTERS DESCRIPTION High current, high speed transistor suited for	OCR Scan	BUTW92 P025P	PDF
NEC 1357 Abstract: LA 8873 TRANSISTOR C 4460 Text: DATA SHEET SILICON TRANSISTOR 2SC5004 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5004 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in m illim e te rs OSC/MIX. It is suitable for a high density surface mount assem bly since the	OCR Scan	2SC5004 2SC5004 NEC 1357 LA 8873 TRANSISTOR C 4460	PDF
PH2856-150 Abstract: PH2856 Text: 4flE D M/A-COn P H 0 m S b 4 E E a S □ Q Q D 7 7 S 4TT • I1AP T -^ 3 ^ f3 PH2856-150 Microwave Pulsed Power Transistor Design Characteristics • High Efficiency Transistor Geometry • Narrowband 2.856 ± 0.005 GHz Operation • Common Base Configuration	OCR Scan	PH2856-150 PH2856	PDF
1BW TRANSISTOR Abstract: F300R06KF R600 Text: 7 =3 f - 3 / F300R 06K F EUPEC SEE • 3M 032T7 Elektrische Eigenschaften Electrical properties Höchstzulässige Werte V ces Maximum rated values 600 V 300 A le 2 ^ O O O O B M fl Thermische Eigenschaften Transistor Transistor D HUPEC Thermal properties DC, pro Baustein/p e r module	OCR Scan	F300R06KF 3M032T7 34D32CI7 1BW TRANSISTOR F300R06KF R600	PDF
transistor 131 8D Abstract: transistor k 3728 QBE+61.2+dp2 Text: N AMER PHILIPS/DISCRETE 86D OLE D T' 01928 ^53=131 DDimbt. 5 BLY90 A V.H.F. POWER TRANSISTOR N-P-N epitaxial planar transistor intended for use in class-A, B and C operated mobile, industrial and m ilitary transmitters w ith a supply voltage o f 12,5 V . The transistor is resistance stabilized. Every tran	OCR Scan	BLY90 transistor 131 8D transistor k 3728 QBE+61.2+dp2	PDF
3055 transistor Abstract: transistor 3055 3055 2N3055 2SC 2276 M 3055 power transistor n3055 2N3066 power transistor 3055 33S3 Text: 2SC T> m flS3SbOS D004T11 * mZI ZG . T ~ 2 3 -/ 3 NPN Transistor for Powerful AF Output Stages 2 N 3055 -SIEMENS AKTIENGESELLSCHAF-2 N 3055 is a single diffused NPN silicon transistor in TO 3 case 3 A 2 DIN 41872). The collector is electrically connected to the case. The transistor is particularly suitable for	OCR Scan	D004T11 Q62702-U58 005ms aa35b05 3055 transistor transistor 3055 3055 2N3055 2SC 2276 M 3055 power transistor n3055 2N3066 power transistor 3055 33S3	PDF

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TRANSISTOR F3 Search Results

TRANSISTOR F3 Result Highlights (5)

TRANSISTOR F3 Datasheets Context Search

MN1280

oz960

BUTW92

BUTW92

butw92

BUTW92

F5 MARK

Untitled

RN1901FS

Untitled

RN1903FS

Untitled

Untitled

Untitled

Untitled

2sb504

Untitled

transistor f1

Untitled

NEC 1357

PH2856-150

1BW TRANSISTOR

transistor 131 8D

3055 transistor