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    TRANSISTOR F20 Search Results

    TRANSISTOR F20 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR F20 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    13MM

    Abstract: PH3134-2OL transistor f20 PH3134
    Text: Radar Pulsed Power Transistor, 2OW, 300~s Pulse, 10% Duty PH3134-2OL 3.1 - 3.4 GHz Features NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry Diffused Emitter Ballasting Resistors


    Original     		PDF PH3134-2OL 13MM PH3134-2OL transistor f20 PH3134

    Untitled

    Abstract: No abstract text available
    Text: eSe-rnl-donauctoi LPioaueti, One. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TYPE 2N6128 N-P-N SILICON POWER TRANSISTOR HIGH-FREQUENCY, HIGH-POWER TRANSISTOR WITH COMPUTER-DESIGNED ISOTHERMAL GEOMETRY


    Original     		PDF 2N6128 2IM6127

    F2021

    Abstract: No abstract text available
    Text: polyfet rf devices F2021 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base


    Original     		PDF F2021 F2021

    F2003

    Abstract: F20-03 idq04
    Text: polyfet rf devices F2003 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base


    Original     		PDF F2003 F2003 F20-03 idq04

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,


    OCR Scan     		PDF BUK436W-800A/B BUK436 -800A -800B OT429 T0247)

    sg transistor

    Abstract: TGF2021-08-SG rf transistor 320C TGF2021 4ghz transistor n "rf transistor"
    Text: TrìQuint SEMICONDUCTOR TGF2021-08-SG 7 W, 12V, 20MHz - 4 GHz, pHEMT Wideband RF Transistor Product Description The T riQ uint TG F2021-08-SG is a discrete 7 W a tt P1dB Transistor operating at 12 volts. The device produces 7W P1dB RF output power at 4GHz. Both defense and com m ercial m arkets can take advantage


    OCR Scan     		PDF TGF2021-08-SG 20MHz TGF2021-08-SG TGF2021-08-SG. sg transistor rf transistor 320C TGF2021 4ghz transistor n "rf transistor"

    Untitled

    Abstract: No abstract text available
    Text: Transistors General Purpose Transistor Isolated Dual Transistors IMT17 •Features 1) Two 2SA1036K chips in a SMT package. 2) Mounting possible with SMT3 au­ tomatic mounting machine. 3) Transistor elements are indepen­ dent, eliminating interference.


    OCR Scan     		PDF IMT17 2SA1036K -500m JMT17

    2N2222A 338

    Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
    Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK


    OCR Scan     		PDF 2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


    OCR Scan     		PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711

    BUK436-800A

    Abstract: BUK436-800B
    Text: PHILIPS INT ERNATIONAL bSE D B 711062b 0Db3T0b b47 « P H I N Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in


    OCR Scan     		PDF 711062b BUK436-800A/B BUK436 -800A -800B BUK436-800A BUK436-800B

    F 300 R 1200 KF

    Abstract: FZ 76 1000
    Text: FZ 200 R 12 KF Therm ische Eigenschaften Thermal properties Rthjc DC, pro Baustein / per module 0,088 °C/W Transistor Transistor Elektrische Eigenschaften Electrical properties 0,03 pro Baustein / per module °C/W Maximum rated values VcES 1200 V 200 A 150


    OCR Scan     		PDF 15ung F 300 R 1200 KF FZ 76 1000

    transistor 3569

    Abstract: 3569 pN3569
    Text: M NPN SILICON PLANAR EPITAXIAL TRANSISTOR M IC R O EI_EC;-rRCDIXIIC3S GENERAL DESCRIPTION : The PN 3569 is an NPN silicon planar epitaxial transistor designed for amplifier and swit­ ching applications for collector current up to 500mA. MECHANICAL OUTLINE


    OCR Scan     		PDF 500mA. O-92A Vcb-40V Ta-75Â 150mA IB-15mA Ic-150Â BOXfc9477 VCE-10V transistor 3569 3569 pN3569

    F 300 R 1200 KF

    Abstract: No abstract text available
    Text: FZ 200 R 12 KF Therm ische Eigenschaften Thermal properties Rthjc DC, pro Baustein / per module 0,088 °C/W Transistor Transistor Elektrische Eigenschaften Electrical properties 0,03 pro Baustein / per module °C/W Maximum rated values VcES 1200 V 200 A 150


    OCR Scan     		PDF 34032T7 F 300 R 1200 KF

    Untitled

    Abstract: No abstract text available
    Text: M PN 3569 NPN SILICON PLANAR EPITAXIAL TRANSISTOR M IC R O EI_EC;-rRCDIXIIC3S GENERAL DESCRIPTION : The PN 3569 is an NPN silicon planar epitaxial transistor designed for amplifier and swit­ ching applications for collector current up to 500mA. MECHANICAL OUTLINE


    OCR Scan     		PDF 500mA. O-92A 150mA 15fflA f-20Mc 300uS,

    LG color tv Circuit Diagram schematics

    Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


    OCR Scan     		PDF 3186J LG color tv Circuit Diagram schematics free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007

    Untitled

    Abstract: No abstract text available
    Text: FF 200 R 12 KF Therm al properties Therm ische Eigenschaften 0,044 C/W DC, pro Baustein / per module 0,088 C/W DC, pro Zweig / per arm 0,03 °C/W pro Baustein / per module 0,06 °C/W pro Zweig / per arm Transistor Transistor Elektrische Eigenschaften Electrical properties


    OCR Scan     		PDF

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


    OCR Scan     		PDF

    1N6227

    Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


    OCR Scan     		PDF

    transistor SG 14

    Abstract: pHEMT transistor tgf2021 TGF2021-04 TGF2021-04-SG 4GHZ TRANSISTOR
    Text: TrìQuint SEMICONDUCTOR TGF2021-04-SG 4 W, 12V, 20MHz - 4 GHz, pHEMT Wideband RF Transistor Product Description The TriQuint TGF2021-04-SG is a 4 Watt P1dB discrete 4mm pHEMT RF Transistor operating at 12 volts. Both de­ fense and commercial markets can take advantage of the


    OCR Scan     		PDF TGF2021-04-SG 20MHz TGF2021-04-SG TGF2021-04-SG. transistor SG 14 pHEMT transistor tgf2021 TGF2021-04 4GHZ TRANSISTOR

    BUK437-450B

    Abstract: T-39-15
    Text: N AMER 5SE PHILIPS/DISCRETE D •I fa b S B T a i 0050B 1S M PowerMOS transistor BUK437-450B T -3 ^ -1 5 * GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in


    OCR Scan     		PDF BUK437-450B OT-93; BUK437-450B T-39-15

    1BW TRANSISTOR

    Abstract: R1200 R1300 200R12KF
    Text: “R 5 f - 3 f F 200 R 12 KF 55E EUPEC D 3 4 D 3 S CJ7 D0 002i »b Thermische Eigenschaften Transistor Transistor • Elektrische Eigenschaften Electrical properties VcES Maximum rated values 1200 V 200 A HUPEC Thermal properties Rthjc DC, pro Baustein/per module


    OCR Scan     		PDF D00024b 34D32CI7 1BW TRANSISTOR R1200 R1300 200R12KF

    2SJ328

    Abstract: 2SJ328-Z MEI-1202 TEA-1035
    Text: DATA SHEET NEC P-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR iB— r 2SJ328, 2SJ328-Z SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SJ328 is P-channel MOS Field Effect Transistor designed in m illim e te rs for solenoid, m otor and lamp driver.


    OCR Scan     		PDF 2SJ328, 2SJ328-Z 2SJ328 IEI-1209) 2SJ328-Z MEI-1202 TEA-1035

    3N74

    Abstract: TRANSISTOR MARKING A53 3N75 transistor 3N74 Z933 3N7A-76 3N127 3N76 3N75 JAN 3K76
    Text: MIL-S-19500/390 USAF 22 January 1968 WTT TTA D V CDIfrTt'Tf'iTTnW SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, DOUBLE-EMITTER TYPES 3N74, TX3N7A, 3N75, TX3N75, 3N76, TX3N76, 3N127, TX3N127 1. SCOPE •*-•1 Scope. This specification covers the detail requirements for a doubleemitter, NPNj silicon tetrode transistor designed primarily for low-power chopper


    OCR Scan     		PDF MIL-S-19500/390 TX3N75, TX3N76, 3N127, TX3N127 3N74-76 3N127 3N127 3N74 TRANSISTOR MARKING A53 3N75 transistor 3N74 Z933 3N7A-76 3N76 3N75 JAN 3K76

    DIODE SJ 98

    Abstract: BUK437-450B
    Text: N AMER P H I L I P S / D I S C R E T E 5SE D •I fabSBTai 0050B1S M PowerMOS transistor B U K 437-450B T -3^ -15* GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in


    OCR Scan     		PDF BUK437-450B OT-93; DIODE SJ 98