13MM
Abstract: PH3134-2OL transistor f20 PH3134
Text: Radar Pulsed Power Transistor, 2OW, 300~s Pulse, 10% Duty PH3134-2OL 3.1 - 3.4 GHz Features NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry Diffused Emitter Ballasting Resistors
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PH3134-2OL
13MM
PH3134-2OL
transistor f20
PH3134
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Untitled
Abstract: No abstract text available
Text: eSe-rnl-donauctoi LPioaueti, One. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TYPE 2N6128 N-P-N SILICON POWER TRANSISTOR HIGH-FREQUENCY, HIGH-POWER TRANSISTOR WITH COMPUTER-DESIGNED ISOTHERMAL GEOMETRY
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2N6128
2IM6127
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F2021
Abstract: No abstract text available
Text: polyfet rf devices F2021 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base
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F2021
F2021
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F2003
Abstract: F20-03 idq04
Text: polyfet rf devices F2003 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base
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F2003
F2003
F20-03
idq04
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,
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BUK436W-800A/B
BUK436
-800A
-800B
OT429
T0247)
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sg transistor
Abstract: TGF2021-08-SG rf transistor 320C TGF2021 4ghz transistor n "rf transistor"
Text: TrìQuint SEMICONDUCTOR TGF2021-08-SG 7 W, 12V, 20MHz - 4 GHz, pHEMT Wideband RF Transistor Product Description The T riQ uint TG F2021-08-SG is a discrete 7 W a tt P1dB Transistor operating at 12 volts. The device produces 7W P1dB RF output power at 4GHz. Both defense and com m ercial m arkets can take advantage
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TGF2021-08-SG
20MHz
TGF2021-08-SG
TGF2021-08-SG.
sg transistor
rf transistor 320C
TGF2021
4ghz transistor n
"rf transistor"
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Untitled
Abstract: No abstract text available
Text: Transistors General Purpose Transistor Isolated Dual Transistors IMT17 •Features 1) Two 2SA1036K chips in a SMT package. 2) Mounting possible with SMT3 au tomatic mounting machine. 3) Transistor elements are indepen dent, eliminating interference.
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IMT17
2SA1036K
-500m
JMT17
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PDF
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2N2222A 338
Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK
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2CY17
2CY18
2CY19
2CY20
2CY21
500MA
500MA
2N2222A 338
TFK 949
2N1167
halbleiter index transistor
ad161
BSY19
al103
ac128
TFK 404
Tfk 931
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PDF
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y51 h 120c
Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK
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500MA
500MA
240MWF
240MWF
y51 h 120c
bd124
KT368
BFQ59
Silec Semiconductors
BD214
al103
AFY18
bd192
MM1711
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PDF
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BUK436-800A
Abstract: BUK436-800B
Text: PHILIPS INT ERNATIONAL bSE D B 711062b 0Db3T0b b47 « P H I N Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in
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711062b
BUK436-800A/B
BUK436
-800A
-800B
BUK436-800A
BUK436-800B
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PDF
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F 300 R 1200 KF
Abstract: FZ 76 1000
Text: FZ 200 R 12 KF Therm ische Eigenschaften Thermal properties Rthjc DC, pro Baustein / per module 0,088 °C/W Transistor Transistor Elektrische Eigenschaften Electrical properties 0,03 pro Baustein / per module °C/W Maximum rated values VcES 1200 V 200 A 150
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15ung
F 300 R 1200 KF
FZ 76 1000
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transistor 3569
Abstract: 3569 pN3569
Text: M NPN SILICON PLANAR EPITAXIAL TRANSISTOR M IC R O EI_EC;-rRCDIXIIC3S GENERAL DESCRIPTION : The PN 3569 is an NPN silicon planar epitaxial transistor designed for amplifier and swit ching applications for collector current up to 500mA. MECHANICAL OUTLINE
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500mA.
O-92A
Vcb-40V
Ta-75Â
150mA
IB-15mA
Ic-150Â
BOXfc9477
VCE-10V
transistor 3569
3569
pN3569
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PDF
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F 300 R 1200 KF
Abstract: No abstract text available
Text: FZ 200 R 12 KF Therm ische Eigenschaften Thermal properties Rthjc DC, pro Baustein / per module 0,088 °C/W Transistor Transistor Elektrische Eigenschaften Electrical properties 0,03 pro Baustein / per module °C/W Maximum rated values VcES 1200 V 200 A 150
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34032T7
F 300 R 1200 KF
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PDF
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Untitled
Abstract: No abstract text available
Text: M PN 3569 NPN SILICON PLANAR EPITAXIAL TRANSISTOR M IC R O EI_EC;-rRCDIXIIC3S GENERAL DESCRIPTION : The PN 3569 is an NPN silicon planar epitaxial transistor designed for amplifier and swit ching applications for collector current up to 500mA. MECHANICAL OUTLINE
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500mA.
O-92A
150mA
15fflA
f-20Mc
300uS,
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PDF
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LG color tv Circuit Diagram schematics
Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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3186J
LG color tv Circuit Diagram schematics
free transistor equivalent book 2sc
NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG
RCA SK CROSS-REFERENCE
KIA 4318
transistor cs 9012
Til 322A
sx3704
diode d.a.t.a. book
1N1007
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PDF
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Untitled
Abstract: No abstract text available
Text: FF 200 R 12 KF Therm al properties Therm ische Eigenschaften 0,044 C/W DC, pro Baustein / per module 0,088 C/W DC, pro Zweig / per arm 0,03 °C/W pro Baustein / per module 0,06 °C/W pro Zweig / per arm Transistor Transistor Elektrische Eigenschaften Electrical properties
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IC HXJ 2038
Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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1N6227
Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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PDF
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transistor SG 14
Abstract: pHEMT transistor tgf2021 TGF2021-04 TGF2021-04-SG 4GHZ TRANSISTOR
Text: TrìQuint SEMICONDUCTOR TGF2021-04-SG 4 W, 12V, 20MHz - 4 GHz, pHEMT Wideband RF Transistor Product Description The TriQuint TGF2021-04-SG is a 4 Watt P1dB discrete 4mm pHEMT RF Transistor operating at 12 volts. Both de fense and commercial markets can take advantage of the
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TGF2021-04-SG
20MHz
TGF2021-04-SG
TGF2021-04-SG.
transistor SG 14
pHEMT transistor
tgf2021
TGF2021-04
4GHZ TRANSISTOR
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PDF
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BUK437-450B
Abstract: T-39-15
Text: N AMER 5SE PHILIPS/DISCRETE D •I fa b S B T a i 0050B 1S M PowerMOS transistor BUK437-450B T -3 ^ -1 5 * GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in
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BUK437-450B
OT-93;
BUK437-450B
T-39-15
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PDF
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1BW TRANSISTOR
Abstract: R1200 R1300 200R12KF
Text: “R 5 f - 3 f F 200 R 12 KF 55E EUPEC D 3 4 D 3 S CJ7 D0 002i »b Thermische Eigenschaften Transistor Transistor • Elektrische Eigenschaften Electrical properties VcES Maximum rated values 1200 V 200 A HUPEC Thermal properties Rthjc DC, pro Baustein/per module
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D00024b
34D32CI7
1BW TRANSISTOR
R1200
R1300
200R12KF
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PDF
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2SJ328
Abstract: 2SJ328-Z MEI-1202 TEA-1035
Text: DATA SHEET NEC P-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR iB— r 2SJ328, 2SJ328-Z SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SJ328 is P-channel MOS Field Effect Transistor designed in m illim e te rs for solenoid, m otor and lamp driver.
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2SJ328,
2SJ328-Z
2SJ328
IEI-1209)
2SJ328-Z
MEI-1202
TEA-1035
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PDF
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3N74
Abstract: TRANSISTOR MARKING A53 3N75 transistor 3N74 Z933 3N7A-76 3N127 3N76 3N75 JAN 3K76
Text: MIL-S-19500/390 USAF 22 January 1968 WTT TTA D V CDIfrTt'Tf'iTTnW SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, DOUBLE-EMITTER TYPES 3N74, TX3N7A, 3N75, TX3N75, 3N76, TX3N76, 3N127, TX3N127 1. SCOPE •*-•1 Scope. This specification covers the detail requirements for a doubleemitter, NPNj silicon tetrode transistor designed primarily for low-power chopper
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MIL-S-19500/390
TX3N75,
TX3N76,
3N127,
TX3N127
3N74-76
3N127
3N127
3N74
TRANSISTOR MARKING A53
3N75
transistor 3N74
Z933
3N7A-76
3N76
3N75 JAN
3K76
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PDF
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DIODE SJ 98
Abstract: BUK437-450B
Text: N AMER P H I L I P S / D I S C R E T E 5SE D •I fabSBTai 0050B1S M PowerMOS transistor B U K 437-450B T -3^ -15* GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in
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BUK437-450B
OT-93;
DIODE SJ 98
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PDF
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