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    TRANSISTOR ER 302 Search Results

    TRANSISTOR ER 302 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR ER 302 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    4n25

    Abstract: 4n35 597-289 4n25 an DIODE 0536 W4N35 4n32
    Text: Issued November 1992 F14481 4N series opto-isolators RS stock nos. 597-289, 597-295, 597-302 A range of industry standard general purpose opto-isolators. The 4N25 and 35 consist of a gallium arsenide infra-red emitting diode coupled to an NPN silicon photo-transistor. The 4N32 device consists of a gallium


    Original     		PDF F14481 2500Vdc 4n25 4n35 597-289 4n25 an DIODE 0536 W4N35 4n32

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS Philips Sem iconductors PHILIPS Philips Semiconductors Preliminary specification UHF power LDMOS transistor BLF2047 PINNING - SOT5Q2A FEATURES • High pow er gain PIN DESCRIPTION • Easy p ow er control 1 drain • E xcellent ruggedness


    OCR Scan     		PDF BLF2047 MBK394

    CA3026

    Abstract: No abstract text available
    Text: Differential Am plifiers íü !| HARRIS S E M I C O N D U C T O R BCA • GE CA3054 IN T ER SIL M ay 1 9 9 0 Transistor Array - Dual Independent Differential Amplifiers For Low Pow er Applications at Frequencies from DC to 1 2 0 M H z Features: Applications:


    OCR Scan     		PDF CA3054 CA3026

    BLV21

    Abstract: transistor L6 Sss-5 2222 123 capacitor philips B20-4
    Text: PHILIPS INTERNATIONAL bSE ]> m 7110fl2b 0GbSfl3ñ 3ÔT « P H I N BLV21 Jl V.H.F. POW ER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in cfass-A, B and C operated h.f. and v.h.f. transmitters w ith a nominal supply voltage o f 28 V . The transistor is resistance stabilized and is guaran­


    OCR Scan     		PDF 711002b BLV21 OT-123. 7Z68949 BLV21 transistor L6 Sss-5 2222 123 capacitor philips B20-4

    SNW-EQ-608

    Abstract: SNW-FQ-302B BLF1047 SNW-FQ-302A
    Text: DISCRETE SEMICONDUCTORS Preliminary specification Supersedes data of 1999 July 01 Philips Semiconductors 2000 Feb 02 PHILIPS Philips Semiconductors Preliminary specification UHF power LDMOS transistor BLF1047 FEATURES PINNING -SOT541A • High pow er gain


    OCR Scan     		PDF BLF1047 OT541 OT541A SNW-EQ-608 SNW-FQ-302B BLF1047 SNW-FQ-302A

    transistor di 960

    Abstract: SOT467C BLF1046
    Text: DISCRETE SEMICONDUCTORS Preliminary specification Supersedes data of 1999 Nov 02 Philips Semiconductors 2000 Feb 02 PHILIPS Philips Semiconductors Preliminary specification UHF power LDMOS transistor BLF1046 FEATURES PINNING - SOT467C • High pow er gain


    OCR Scan     		PDF BLF1046 OT467C) OT467C transistor di 960 SOT467C BLF1046

    SNW-EQ-608

    Abstract: transistor 1345 SNW-FQ-302B transistor di 960 BLF1048 SNW-FQ-302A
    Text: DISCRETE SEMICONDUCTORS Preliminary specification Supersedes data of 1999 July 01 Philips Sem iconductors 2000 Feb 02 PHILIPS Philips Semiconductors Preliminary specification UHF power LDMOS transistor BLF1048 FEATURES PINNING - SOT5Q2A • High pow er gain


    OCR Scan     		PDF BLF1048 OT502A) SQT502A SNW-EQ-608 transistor 1345 SNW-FQ-302B transistor di 960 BLF1048 SNW-FQ-302A

    CA3026

    Abstract: CA3005 CA3006 CA3005 or CA3006 ca3054d CA3054E ca3026t a3026c ca3054
    Text: D ifferential Am plifiers CA3026, CA3054 Transistor Array - Dual Independent Differential Amplifiers For Low Pow er A pplications at Frequencies from D C to 120 M H z Features • Two differential amplifiers on a common substrate ■ Independently accessible inputs and outputs


    OCR Scan     		PDF CA3026, CA3054 CA3054 CA3026 CA3005 CA3006 CA3005 or CA3006 ca3054d CA3054E ca3026t a3026c

    56590653B

    Abstract: MRF316
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor MRF316 . . . designed primarily for wideband large-signal output amplifier stages in the 30-200 MHz frequency range. • Guaranteed Performance at 150 MHz, 28 Vdc Output Power = 80 Watts


    OCR Scan     		PDF MRF316 MRF316 56590653B

    Untitled

    Abstract: No abstract text available
    Text: Voltage Followers S G 1 0 2 /2 0 2 /3 0 2 SG110/210/310 Th e S G 102/202/302 are high-gain operational am plifiers designed sp ecifically fo r unity-gain non-inverting voltage follow er applications. Th e devices incorporate advanced super-beta transistor processing techniques to


    OCR Scan     		PDF SG110/210/310

    mrf317"

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor . . designed primarily for wideband large-signal output amplifier stages in 30-200 MHz frequency range. • Guaranteed Performance at 150 MHz, 28 Vdc Output Power = 100 W Minimum Gain = 9.0 dB


    OCR Scan     		PDF Carrier/120 MRF317 mrf317"

    Untitled

    Abstract: No abstract text available
    Text: SOT223 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR FZTA42 o FEATURES * Suitable for video output stages in T V sets and switch m ode p ow er supplies * High breakdown voltage CO M PLIM EN TAR Y TYPE - FZTA92 B PARTMARKING DETAIL - DEVICE TYPE IN FULL ABSOLUTE MAXIMUM RATINGS.


    OCR Scan     		PDF OT223 FZTA42 FZTA92 FMMTA42

    A720 transistor

    Abstract: transistor A720 4392 ic equivalent 2N3906 350MW
    Text: M1L-S'19500/530 ER 1 March 1979 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, SILICON TYPE 2N3906 This specification ts approved for use^ _by_ th<e Electronics Commandj Department o f ^ h ^ ^ r m V j a_nd_is available for use by a~lT Departments and" Agencies of the Department of Defense.


    OCR Scan     		PDF 2N3906 MIL-S-19500/530 MIL-S-19500. MIL-S-19500 5961-A720) A720 transistor transistor A720 4392 ic equivalent 2N3906 350MW

    Untitled

    Abstract: No abstract text available
    Text: N AMER P H I L I P S / D I S C R E T E OLE D bbSBTBl OOISIST 2 DtV tLU H M tN I UAIA PZB16040U T his data sheet contains advance inform ation and specifications are subject to change w ithout notice. y v r - 3 3 - H M ICRO W AVE POW ER TRANSISTOR NPN silicon planar epitaxial microwave power transistor, intended for use in a common-base class-C


    OCR Scan     		PDF PZB16040U T-33-11

    IRFP150

    Abstract: D88FL2 DM160
    Text: [ F € M I ^ ° [ M Ì S F U IRFP150,151 D88FL2.K2 F FIELD EFFECT POWER TRANSISTOR 40 AMPERES 100, 60 VOLTS ROSIEN - 0-055 n This series of N -C h a n n e l E n h a n c e m e n t-m o d e P ow er MOSFETs utilizes G E ’s advanced Power D M O S technology


    OCR Scan     		PDF IRFP150 D88FL2 RDS10N| DM160

    TP3020A

    Abstract: CER40 case 244-04 TP3020
    Text: b'ìE D MO TO R O L A SC X ST RS /R F b3 b 7 B S 4 DIDDflfll «riOTb MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information TP3020A The RF Line U H F P o w er Transistor The TP3020A is designed for use in the 900 MHz mobile radio band. Its high gain and ability to operate Class A makes it an ideal choice as a driver operating


    OCR Scan     		PDF b3b7E54 TP3020A TP3020A 244-Typ CER40 case 244-04 TP3020

    SJ 2036

    Abstract: jsw marking 2N2631 2N2876 transistor JSW 12 ic sj 2036 transistor JSW 2N263 CLA transistor JSW 70
    Text: M IL -S - 1£500/303 NAVY 22 O cto b er 1964 MILITARY SPECIFICATION TRANSISTOR, T Y PE S 2N263I AND 2N2876 1. SCOPE 1.1 D e sc rip tio n .- T h is sp e c ific a tio n c o v e rs the d e ta il re q u ire m e n ts fo r a silic o n , NPN tr a n s is to r and is


    OCR Scan     		PDF 2N2631 2N2876 MIL-S-19500, 2N2876 2N2631. SJ 2036 jsw marking transistor JSW 12 ic sj 2036 transistor JSW 2N263 CLA transistor JSW 70

    HXTR-5104

    Abstract: S21E transistor 5104 db Hxtr 5104 ltp 521 11 C u50
    Text: H E W L E T T ^ PACKARD COMPONENTS LINEAR POWER TRANSISTOR HXTR-5104 Features H IG H P1dB L IN E A R PO W ER 29 dBm Typical at 2 G Hz H IG H P 1dB G A IN 9 dB Typical at 2 GHz BIPOLAR TRANSISTORS . LOW D IS T O R T IO N H IG H P O W E R -A D D E D E F F IC IE N C Y


    OCR Scan     		PDF HXTR-5104 HPAC-200 HXTR-5104 S21E transistor 5104 db Hxtr 5104 ltp 521 11 C u50

    HXTR-5103

    Abstract: HPAC-200 GHL 8 S21E HPAC
    Text: COMPONENTS LINEAR POWER TRANSISTOR Features HXTR-5103 7.62 H IG H P1dB L IN E A R PO W ER 23 dBm Typical at 2 G Hz H IG H P1dB G A IN 11 dB Typical at 2 G Hz LOW D IS T O R T IO N BIPOLAR TRANSISTORS H E W L E T T j j ÿ PA C K A R D G H IG H P O W E R -A D D E D E F F IC IE N C Y


    OCR Scan     		PDF HXTR-5103 HPAC-200 HXTR-5103 GHL 8 S21E HPAC

    2N1412A

    Abstract: 2N1112 2NK12 IC 3Q20 SJ 2036 2N1412 clare mercury relay 3Q20 3Q20 IC Germanium power
    Text: M IL -S - 19500/76C N A V T 20 Septem ber 1967. SU PERSEDING M I L - S - 19500/7 6B(NAVT) 15 J u n e 2965 (See 6. 2) M ILITA RY S P E C IF IC A T IO N TRANSISTOR, P N P , GERM ANIUM , POW ER T Y P E S ZN14IE AND 2N 1412A SCOPE 1. I D e s c rip tio n - T h is s p e c if ic a tio n c o v e rs th e d e ta il r e q u ir e m e n ts


    OCR Scan     		PDF 19500/76C 2NI412 2N1412A MIL-S-19500, 2N1412 2N1412A 1912C. 5961-NT20) 2N1112 2NK12 IC 3Q20 SJ 2036 clare mercury relay 3Q20 3Q20 IC Germanium power

    TRANSISTOR BD 135

    Abstract: Q1206
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TP 3021 The RF Line U H F P o w er T ran sisto r The TP3021 is designed for 24 V common emitter base station amplifiers. Operating in the 820-960 MHz bandwidth, it has been specifically designed for use in analog and digital GSM systems as a medium power output device.


    OCR Scan     		PDF TP3021 Symbol70 TRANSISTOR BD 135 Q1206

    5V RS232 driver tristate

    Abstract: transistor Er 302 loopback using RS232
    Text: C irN A v SP301/302 SIG N AL PROCESSING EXCELLENCE RS232/RS422 Line Drivers/Receivers RS232 and RS422 on One Chip Multiple Drivers and Receivers Software-selectable Modes Loopback for Self-Testing Short-circuit Protected 24-pin Single-width DIP or SOIC Package


    OCR Scan     		PDF SP301/302 RS232/RS422 RS232 RS422 24-pin SP301 SP302 5V RS232 driver tristate transistor Er 302 loopback using RS232

    Untitled

    Abstract: No abstract text available
    Text: GEC PLESSEY SEMICONDS 43E D • 3 7 b ö S S S GGlS'ihl H B P L S B GEC P L E S S E Y I S E M I C O N D U C T O R ~ S ~ ~ f. 3028-1.0 SP1648 ECL OSCILLATOR The SP1648 is an em itter-coupled oscillator, constructed on a single m onolithic silicon chip. O utput levels are


    OCR Scan     		PDF SP1648 SP1648 SP1648, 100MHz SP1648. T-50-15

    automatic motor for reverse and forward

    Abstract: FP1016 LB1645 LB1640 ac motor forward reverse control LB1687N c+9050+60001,+motor LB1651
    Text: Continued rrom previous page Package Device Number of tDrawing Type pins and number configuration Description Features LA5528N M M FP 8 30 3 2 B C om p act D C motor driver Miniflat p ac ka ge version of the L A 5 5 2 8 N LA5540 S IP 4H 3027A Regulator, motor driver with brake


    OCR Scan     		PDF 30SLF 3006B 3036B 3001B LA5528N LA5540 LA5550M LB1609 LB1619M LB1620 automatic motor for reverse and forward FP1016 LB1645 LB1640 ac motor forward reverse control LB1687N c+9050+60001,+motor LB1651