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    TRANSISTOR DF- RO Search Results

    TRANSISTOR DF- RO Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR DF- RO Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    AN562

    Abstract: SD1565
    Text: AN562 APPLICATION NOTE BALANCED UHF AMPLIFIERS 1. DESIGN. 425MHz, 600W pulsed power transistor amplifier with the following specifications: bandwidth BW =50MHz (450-400), passband flatness (ripple)=.05dB max, pulsewidth (P.W.)=20µsec, duty factor (DF)=15%, impedance (source and load)=50Ohms, and discrete or distributed circuitry (microstrip).


    Original     		PDF AN562 425MHz, 50MHz 50Ohms, AN562 SD1565

    TRANSISTOR 7059

    Abstract: AN562 SD1565
    Text: AN562 APPLICATION NOTE BALANCED UHF AMPLIFIERS 1. DESIGN. 425MHz, 600W pulsed power transistor amplifier with the following specifications: bandwidth BW =50MHz (450-400), passband flatness (ripple)=.05dB max, pulsewidth (P.W.)=20µsec, duty factor (DF)=15%, impedance (source and load)=50Ohms, and discrete or distributed circuitry (microstrip).


    Original     		PDF AN562 425MHz, 50MHz 50Ohms, TRANSISTOR 7059 AN562 SD1565

    2SD1898

    Abstract: 100MHZ
    Text: 2SD1898 NPN Silicon Elektronische Bauelemente Epitaxial Planar Transistor RoHS Compliant Product Description SOT-89 The 2SD1898 is designed for switching applications. Millimeter Min. Max. 4.4 4.6 4.05 4.25 1.50 1.70 1.30 1.50 2.40 2.60 0.89 1.20 REF. A B


    Original     		PDF 2SD1898 OT-89 2SD1898 500mA, 500mA 100MHZ 08-May-2007 100MHZ

    musical bell

    Abstract: rhythm UM66T UM66T68L UM66* melody generator door bell ic UM66T Series UM66T19L UM66T32L UM66T05L
    Text: UM66TXXL LINEARINTEGRATED CIRCUIT MELODY INTEGRATED CIRCUIT DESCRIPTION The Contek UM66TXXL series are CMOS LSI designed for using in door bell, telephone and toy application. It is an on-chip ROM programmed for musical performance. Produced by CMOS technology, the device results in very low power


    Original     		PDF UM66TXXL UM66TXXL 64-Note 258Hz 23768Hz. UM66T musical bell rhythm UM66T68L UM66* melody generator door bell ic UM66T Series UM66T19L UM66T32L UM66T05L

    LX8580A

    Abstract: LX8580A-00CDD LX8580A-00CDDT LX8580A-00CDF LX8580A-00CP LX8584
    Text: LX8580A 7.5A Very Low Dropout Positive Regulator I N T E G R AT E D P R O D U C T S Power Ma na ge men t P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION ! Low Dropout, 650mV at 7.5A Output Current in Dual Supply Mode ! Fast Transient Response ! Remote Sensing


    Original     		PDF LX8580A 650mV LX8584 LX8580A O-220, O-263, LX8580A-00CDD LX8580A-00CDDT LX8580A-00CDF LX8580A-00CP LX8584

    LX8580A-00CDD

    Abstract: LX8580A-00CDF LX8580A-00CP LX8584 LX8580A
    Text: LX8580A 7.5A Very Low Dropout Positive Regulator TM P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION ƒ Low Dropout, 650mV at 7.5A Output Current in Dual Supply Mode ƒ Fast Transient Response ƒ Remote Sensing ƒ 1mV Load Regulation ƒ Adjustable Output


    Original     		PDF LX8580A 650mV LX8584 LX8580A O-220, O-263, LX8580A-00CDD LX8580A-00CDF LX8580A-00CP LX8584

    Untitled

    Abstract: No abstract text available
    Text: BF721T1G PNP Silicon Transistor Features • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com MAXIMUM RATINGS Rating Symbol Value Unit Collector - Emitter Voltage VCEO -300 Vdc Collector - Base Voltage VCBO -300


    Original     		PDF BF721T1G BF721T1/D

    LX8580A

    Abstract: LX8580A-00CDD LX8580A-00CDDT LX8580A-00CDF LX8580A-00CP LX8584 K 927
    Text: LX8580A I N T E G R A T E D 7.5A Very Low Dropout Positive Regulator P R O D U C T S P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION Low Dropout, 650mV at 7.5A Output Current in Dual Supply Mode Fast Transient Response Remote Sensing 1mV Load Regulation


    Original     		PDF LX8580A 650mV LX8584 LX8580A O-220, O-263, LX8580A-00CDD LX8580A-00CDDT LX8580A-00CDF LX8580A-00CP LX8584 K 927

    820uf 25V capacitor

    Abstract: 5 lead dd pak LX8580A LX8580A-00CDD LX8580A-00CDF LX8580A-00CP LX8584
    Text: LX8580A 7.5A Very Low Dropout Positive Regulator TM P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION ƒ Low Dropout, 650mV at 7.5A Output Current in Dual Supply Mode ƒ Fast Transient Response ƒ Remote Sensing ƒ 1mV Load Regulation ƒ Adjustable Output


    Original     		PDF LX8580A 650mV LX8584 LX8580A O-220, O-263, 820uf 25V capacitor 5 lead dd pak LX8580A-00CDD LX8580A-00CDF LX8580A-00CP LX8584

    Untitled

    Abstract: No abstract text available
    Text: LX8580A 7.5A Very Low Dropout Positive Regulator I N T E G R AT E D P R O D U C T S Power Ma na ge men t P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION ! Low Dropout, 650mV at 7.5A Output Current in Dual Supply Mode ! Fast Transient Response ! Remote Sensing


    Original     		PDF LX8580A LX8580A 100mV 250mV

    Untitled

    Abstract: No abstract text available
    Text: LX8580A L I N F I N I T Y 7.5A Very Low Dropout Positive Regulator D I V I S I O N P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION ! Low Dropout, 650mV at 7.5A Output Current in Dual Supply Mode ! Fast Transient Response ! Remote Sensing ! 1mV Load Regulation


    Original     		PDF LX8580A LX8580A 100mV 250mV

    AYW marking code IC

    Abstract: BF721T1G 306 marking code transistor
    Text: BF721T1G PNP Silicon Transistor Features • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com MAXIMUM RATINGS Rating Symbol Value Unit Collector - Emitter Voltage VCEO -300 Vdc Collector - Base Voltage VCBO -300


    Original     		PDF BF721T1G BF721T1/D AYW marking code IC BF721T1G 306 marking code transistor

    linfinity

    Abstract: Linfinity Microelectronics LX8580A LX8580ACDD LX8580ACDF LX8580ACP LX8584
    Text: A LINFINITY M I C R O S E M I LX8580A 7.5A Very Low Dropout Positive Regulator C O M P A N Y P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION ! Low Dropout, 650mV at 7.5A Output Current in Dual Supply Mode ! Fast Transient Response ! Remote Sensing ! 1mV Load Regulation


    Original     		PDF LX8580A 650mV LX8584 LX8580A O-220, O-263, linfinity Linfinity Microelectronics LX8580ACDD LX8580ACDF LX8580ACP LX8584

    TRANSISTOR SMD MARKING CODE B7t

    Abstract: transistor marking b7t BU2104S transistor smd marking JR BUZ104 TRANSISTOR SMD MARKING CODE BS t P-T0263-3-2 smd transistor marking JR marking b7t D1337
    Text: in tP ro BUZ104S tv e d * SIPMOS Power Transistor Product Summary Features « N channel Drain source voltage • Enhancement mode Drain-Source on-state resistance • Avalanche rated Continuous drain current ^DS V 55 ^DS on 0.08 ii b 13.5 A • du/df rated


    OCR Scan     		PDF BUZ104S BU2104S P-T0220-3-1 Q67040-S4007-A2 BUZ104S E3045A P-T0263-3-2 Q67040-S4007-A6 E3045 TRANSISTOR SMD MARKING CODE B7t transistor marking b7t transistor smd marking JR BUZ104 TRANSISTOR SMD MARKING CODE BS t smd transistor marking JR marking b7t D1337

    fr diode

    Abstract: DIODE JS.6 P-T0251
    Text: SIEMENS SPD21N05L SPU21N05L SIPMOS Power Transistor • N channel • Enhancement mode • Logic Level • Avalanche-rated • dv/df rated • 175°C operating temperature Pin 1 Pin 2 Pin 3 G D S Type Vps b R DS on Package Ordering Code SPD21N05L 55 V


    OCR Scan     		PDF SPD21N05L SPU21N05L P-T0252 P-T0251 Q67040 S4137- -S4131 fr diode DIODE JS.6 P-T0251

    BUZ 21 SMD

    Abstract: No abstract text available
    Text: SIEMENS BUZ 103 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv/df rated • Low on-resistance • 175°C operating temperature • also in TO-22O SMD available Type Vfcs b ^% S on) Package Ordering Code BUZ 103 50 V


    OCR Scan     		PDF O-22O O-220 C67078-S1352-A2 D5155 BUZ 21 SMD

    book FOR D 1047

    Abstract: No abstract text available
    Text: SPP 80N03L SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage ^DS • Enhancement mode Drain-Source on-state resistance f î D S o n • Avalanche rated Continuous drain current b 30 V 0 .0 0 6 Q 80 A • Logic Level • dv/df rated


    OCR Scan     		PDF 80N03L SPP80N03L SPB80N03L P-T0220-3-1 Q67040-S4735-A2 P-T0263-3-2 Q67040-S4735-A3 S35bQ5 Q133777 SQT-89 book FOR D 1047

    Untitled

    Abstract: No abstract text available
    Text: TT TOSHIBA {DIS CR ETE/ OP TO} 9097250 TOSHIBA DISCRETE/OPTO dF I ^ D T V E S O DDlbbSb 99D 16656 SEMICONDUCTOR TOSHIBA FIELD EFFECT TRANSISTOR 2 SK 3 5 8 SILICON N CHANNEL MOS TYPE (7T-MOS) TECHNICAL DATA INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS.


    OCR Scan     		PDF 1C13MAX, 100nA

    SDT7601

    Abstract: No abstract text available
    Text: 8 3 6 8 6 0 2 SO L IT RO N D E V I C E S ELEMENT NUMBER flb INC 86 D 0 2 5 7 5 dF | fl3hfib02 0 0D 5 S7 S fi |~_ 185 MEDIUM TO HIGH VOLTAGE, FAST SWITCHING NPN EPITAXIAL/TRIPLE DIFFUSED PLANAR POWER TRANSISTOR * CONTACT METALLIZATION Base and emitter: > 3 0 .0 0 0 A Aluminum


    OCR Scan     		PDF fl3hfib02 203mm) 40MHz 40MHz 300pF SDT7601

    PNP TRANSISTOR 0.1A 60V

    Abstract: 2n2658 Solitron
    Text: 8 3 6 8 6 0 2 SOL ITRON D E V I C E S INC _9 5 D S0LITR0N DEVICES INC "TS 02861 D T ~~2S~- DF|fl3bflbDa DDDEflbl M [o [y]©Tr ©ättäil < M EDIUM TO HIGH VOLTAGE, FAST SWITCHING IJ'ëEÊùi'oa Devices. Inc NPN EPITAXIAL/TRIPLE DIFFUSED PLANAR POWER TRANSISTOR* FORMERLY 84)


    OCR Scan     		PDF

    2SK790

    Abstract: HSO16 2SK79 1SV35
    Text: TOSHIBA {DISCRETE/OPTO} 9097250 T O S H IB A TT dF § T D T 725G O D l bTSS T J T O S H IB A D I S C R E T E /OPTO J T0SHIBA FIELD effect TRANSISTOR 2 S IC 7 9 0 99D 1 6 7 5 5 SEMICONDUCTOR SILICON N CHANNEL MOS TYPE C7T-MOSI T-3'?-13 TECHNICAL DATA •INDUSTRIAL APPLICATIONS


    OCR Scan     		PDF TDT725G 300uA EGA-2SK790-A EGA-2SK790-5 2SK790 HSO16 2SK79 1SV35

    Untitled

    Abstract: No abstract text available
    Text: h ~7 > V X £ / T ransistors 2 S D 1 7 6 2 2SD1762 x t f ^ df ' > 7 ; u 7 0 u - ^ N P N '> u = i> h 7 > y x ^ 1£J§>J$! :fr*i,lif fl/L o w Freq. Power Amp. Epitaxial Planar NPN Silicon Transistor • • W f^ & H /D im e n s io n s U n it: mm v*>JV;V'J| -r


    OCR Scan     		PDF 2SD1762 2SB1185.

    OPTO-34

    Abstract: No abstract text available
    Text: M O T O R O L A SC i D I O D E S / O P T O J 6367255 MOTOROLA SC 34 <DIODES/OPTO MMCF2906, MMCF2906A MMCF2907, MMCF2907A dF | b3b725S 34C SILICON) 38185 ^ ^ DD3Û1ÔS D ^ FLIP -C H IP PIMP S W ITC H A N D A M P L IF IE R T R A N S IS T O R S F lip 'C h ip — General purpose P N P sw itching and a m p lifie r transistor


    OCR Scan     		PDF b3b725S MMCF2906, MMCF2906A MMCF2907, MMCF2907A CF2907A CF2906 CF2906A CF2907 CF2907A OPTO-34

    transistor lt 6229

    Abstract: D239 TRANSISTOR Transistor ml5 similar 5100H
    Text: MSS0306 M OSEL VITELIC 3" VOICE ROM Features • Single power supply can operate at 2.4V through 4.5V. ■ Current output can drive 8 ohm speaker with a transistor. ■ The voice content is stored up to 3.5 seconds 5100h and can be separated to 8 sections.


    OCR Scan     		PDF MSS0306 5100h 20000h) b3S33Tl PID239 transistor lt 6229 D239 TRANSISTOR Transistor ml5 similar