TRANSISTOR DB 12 Search Results

TRANSISTOR DB 12 Result Highlights (5)

Part	Manufacturer	Description
CA3082	Rochester Electronics LLC	CA3082 - Small Signal Bipolar Transistor
CA3081F	Rochester Electronics LLC	CA3081 - Small Signal Bipolar Transistor
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold

TRANSISTOR DB 12 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
transistor BF 697 Abstract: transistor kf 469 transistor BI 342 905 682 SOT23 MARKING K 2645 transistor 038N BJT BF 331 KF 569 transistor "micro-x" "marking" 102 AF 1507 Text: SILICON TRANSISTOR NE680 SERIES NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz E • LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz B • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz • EXCELLENT LOW VOLTAGE	Original	NE680 NE68800 NE68018-T1-A1 NE68019-T1-A1 NE68030-T1-A1 transistor BF 697 transistor kf 469 transistor BI 342 905 682 SOT23 MARKING K 2645 transistor 038N BJT BF 331 KF 569 transistor "micro-x" "marking" 102 AF 1507	PDF
TRANSISTOR C 4460 Abstract: AT-41533 544 code marking amplifier zo 103 ma AT-41511 AT-41511-BLK AT-41511-TR1 AT-41533-BLK AT-41533-TR1 S21E Text: General Purpose, Low Noise NPN Silicon Bipolar Transistor Technical Data AT-41511 AT-41533 Features Description • General Purpose NPN Bipolar Transistor • 900 MHz Performance: AT-41511: 1 dB NF, 15.5 dB GA AT-41533: 1 dB NF, 14.5 dB GA • Characterized for 3, 5, and	Original	AT-41511 AT-41533 AT-41511: AT-41533: OT-23 OT-143 AT-41511 OT-23, TRANSISTOR C 4460 AT-41533 544 code marking amplifier zo 103 ma AT-41511-BLK AT-41511-TR1 AT-41533-BLK AT-41533-TR1 S21E	PDF
AT-41511 Abstract: AT-41511-BLK AT-41511-TR1 AT-41533 AT-41533-BLK AT-41533-TR1 S21E AT415 Text: General Purpose, Low Noise NPN Silicon Bipolar Transistor Technical Data AT-41511 AT-41533 Features Description • General Purpose NPN Bipolar Transistor • 900 MHz Performance: AT-41511: 1 dB NF, 15.5 dB GA AT-41533: 1 dB NF, 14.5 dB GA • Characterized for 3, 5, and	Original	AT-41511 AT-41533 AT-41511: AT-41533: OT-23 OT-143 AT-41511 AT-41533 OT-23, AT-41511-BLK AT-41511-TR1 AT-41533-BLK AT-41533-TR1 S21E AT415	PDF
nf 820 Abstract: AT-41511 AT-41511-BLK AT-41511-TR1 AT-41533 AT-41533-BLK AT-41533-TR1 S21E Text: General Purpose, Low Noise NPN␣ Silicon Bipolar Transistor Technical Data AT-41511 AT-41533 Features Description • General Purpose NPN Bipolar Transistor • 900 MHz Performance: AT-41511: 1 dB NF, 15.5 dB GA AT-41533: 1 dB NF, 14.5 dB GA • Characterized for 3, 5, and	Original	AT-41511 AT-41533 AT-41511: AT-41533: OT-23 OT-143 AT-41511 AT-41533 OT-23, nf 820 AT-41511-BLK AT-41511-TR1 AT-41533-BLK AT-41533-TR1 S21E	PDF
550 902 Abstract: 2SC5433 TA 8403 A transistor 0440 Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA802TC NPN SILICON RF TRANSISTOR WITH 2 ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Built-in low phase distortion, high-gain transistor NF = 1.4 dB TYP., S21e2 = 12.0 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 1 GHz	Original	PA802TC S21e2 2SC5433) 2SC5433 PA802TC-T1 550 902 2SC5433 TA 8403 A transistor 0440	PDF
136.21 Abstract: AT42010 AT-42010 S21E Text: Up to 6 GHz Medium Power Silicon Bipolar Transistor Technical Data AT-42010 Features • High Output Power: 12.0 dBm Typical P1 dB at 2.0 GHz 20.5 dBm Typical P1 dB at 4.0 GHz • High Gain at 1 dB Compression: 14.0 dB Typical G1 dB at 2.0 GHz 9.5 dB Typical G1 dB at 4.0 GHz	Original	AT-42010 AT-42010 AT42010 RN/50 5965-8910E 136.21 S21E	PDF
transistor Abstract: rf npn power transistor c 10-12 ghz 2SC2954 RF NPN POWER TRANSISTOR 3 GHZ current buffer ic 30mA high gain low capacitance NPN transistor high gain low voltage NPN transistor S21E-2 NPN RF Amplifier RF POWER TRANSISTOR NPN Text: isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC2954 DESCRIPTION •Low Noise and High Gain NF = 2.3 dB TYP. ; ︱S21e︱2 = 20 dB TYP. @ f = 200 MHz NF = 2.4 dB TYP. ; ︱S21e︱2 = 12.5 dB TYP. @ f = 500 MHz APPLICATIONS	Original	2SC2954 S21e2 500MHz transistor rf npn power transistor c 10-12 ghz 2SC2954 RF NPN POWER TRANSISTOR 3 GHZ current buffer ic 30mA high gain low capacitance NPN transistor high gain low voltage NPN transistor S21E-2 NPN RF Amplifier RF POWER TRANSISTOR NPN	PDF
AF 109 R Abstract: AF109R af109 germanium-pnp-mesa-hf-transistor Text: ¡fi Germanium-PNP-Mesa-HF-Transistor Germanium PNP Mesa RF Transistor Anwendungen: G eregelte Vorstufen bis 260 MHz Applications: C ontrolled pre-stages up to 260 MHz Besondere Merkmale: Features: • Leistungsverstärkung 16,5 dB • Power gain 16.5 dB • Rauschmaß < 4 ,8 dB	OCR Scan	AF109R AF 109 R AF109R af109 germanium-pnp-mesa-hf-transistor	PDF
AT41511-BLK Abstract: AT-41533-BLK Text: f » HEW LETT f t "KM PACKARD General Purpose, Low Noise NPN Silicon Bipolar Transistor Technical Data AT-41511, AT-41533 Features D escription • General Purpose NPN Bipolar Transistor • 900 MHz Performance: AT-41511:1 dB NF, 15.5 dB G. AT-41533:1 dB NF,	OCR Scan	AT-41511, AT-41533 AT-41511 AT-41533 OT-23 OT-143 OT-23, AT41511-BLK AT-41533-BLK	PDF
Untitled Abstract: No abstract text available Text: SILICON TRANSISTOR NE663M04 NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • • HIGH GAIN BANDWIDTH: fT = 15 GHz HIGH POWER GAIN: IS21EI2 = 11 dB TYP at 2 GHz • LOW NOISE FIGURE: NF = 1.2 dB at 2 GHz • HIGH MAXIMUM STABLE GAIN: 15 dB @ 2 GHz • •	Original	NE663M04 IS21EI2 OT-343 NE663M04	PDF
200E Abstract: MRF1047 MRF1047T1 Text: Order this document by MRF1047T1/D Advance Information NPN Silicon Low Noise Transistor RF NPN SILICON TRANSISTOR • fτ = 12 GHz NFmin = 1.0 dB ICMAX = 45 mA VCEO = 5.0 V SEMICONDUCTOR TECHNICAL DATA Low Noise Figure, NFmin = 1.0 dB Typ @1.0 GHz, 3.0 V and 3.0 mA	Original	MRF1047T1/D 25SEP01 26MAR02 200E MRF1047 MRF1047T1	PDF
transistor D 2394 Abstract: No abstract text available Text: Agilent AT-41411 Surface Mount Low Noise Silicon Bipolar Transistor Chip Data Sheet Features • Low Noise Figure: 1.4 dB Typical at 1.0 GHz 1.8 dB Typical at 2.0 GHz Description The AT-41411 bipolar transistor is fabricated using Agilent’s 10 GHz fT Self-Aligned-Transistor SAT	Original	AT-41411 OT-143 5965-0276E 5989-2646EN transistor D 2394	PDF
AT-42010 Abstract: S21E Text: Up to 6 GHz Medium Power Silicon Bipolar Transistor Technical Data AT-42010 Features • High Output Power: 12.0 dBm Typical P1 dB at 2.0␣ GHz 20.5 dBm Typical P1 dB at 4.0␣ GHz • High Gain at 1␣ dB␣ Compression: 14.0 dB Typical G1 dB at 2.0␣ GHz	Original	AT-42010 AT-42010 RN/50 S21E	PDF
2SC3357-T1-A Abstract: No abstract text available Text: NPN SILICON RF TRANSISTOR NE85634 / 2SC3357 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN POWER MINIMOLD FEATURES • Low noise and high gain NF = 1.1 dB TYP., Ga = 7.5 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz NF = 1.8 dB TYP., Ga = 9.0 dB TYP. @ VCE = 10 V, IC = 40 mA, f = 1 GHz	Original	NE85634 2SC3357 NE85634-A PU10211EJ01V0DS 2SC3357-T1-A	PDF

LB 1639 Abstract: transistor TT 3043 Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE681 SERIES FEATURES_ • HIGH GAIN BANDWIDTH PRODUCT: ft = 8 GHz • LOW NOISE FIGURE: 1.2 dB at 1 GHz 1.6 dB at 2 GHz • HIGH ASSOCIATED GAIN: 15 dB at 1 GHz 12 dB at 2 GHz • LOW COST 00 CHIP	OCR Scan	NE681 NE68100 NE68118-T1 NE68119-T1 NE68130-T1 NE68133-T1B LB 1639 transistor TT 3043	PDF
SAA 1006 Abstract: si 18752 K 1723 NE02132 2sc2570 transistor SAA 1058 saa 5000 0958K Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE021 SERIES FEATURES_ • HIGH INSERTION GAIN: 18.5 dB at 500 MHz • LOW NOISE FIGURE: 1.5 dB at 500 MHz • HIGH POWER GAIN: 12 dB at 2 GHz • LARGE DYNAMIC RANGE: 19 dBm at 1 dB, 2 GHz Gain Compression	OCR Scan	NE021 NE02107 OT-23) SAA 1006 si 18752 K 1723 NE02132 2sc2570 transistor SAA 1058 saa 5000 0958K	PDF
nec 2501 Abstract: 2SC3357 2SC3357-T1 marking 2sc3357 ic nec 2501 nec RF package SOT89 sot89 TRANSISTOR MARKING AV 2sc3357t1 Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC3357 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN POWER MINIMOLD FEATURES • Low noise and high gain NF = 1.1 dB TYP., Ga = 7.5 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz NF = 1.8 dB TYP., Ga = 9.0 dB TYP. @ VCE = 10 V, IC = 40 mA, f = 1 GHz	Original	2SC3357 2SC3357-T1 nec 2501 2SC3357 2SC3357-T1 marking 2sc3357 ic nec 2501 nec RF package SOT89 sot89 TRANSISTOR MARKING AV 2sc3357t1	PDF
NE021 microwave oscillator Abstract: 2SC2570 NE02132 ic 18752 ic 2SC2570 NE02130 2sc2570 transistor NE02100 K 1723 2SC4225 Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE021 SERIES FEATURES • HIGH INSERTION GAIN: 18.5 dB at 500 MHz • LOW NOISE FIGURE: 1.5 dB at 500 MHz • HIGH POWER GAIN: 12 dB at 2 GHz • LARGE DYNAMIC RANGE: 19 dBm at 1 dB, 2 GHz Gain Compression DESCRIPTION	Original	NE021 NE021 NE02107 OT-23) 34-6393/FAX NE021 microwave oscillator 2SC2570 NE02132 ic 18752 ic 2SC2570 NE02130 2sc2570 transistor NE02100 K 1723 2SC4225	PDF
NE021 microwave oscillator Abstract: 2SC2570 si 18752 xj-05 transistor 2sc2570 1A12 nec Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE021 SERIES FEATURES • HIGH INSERTION GAIN: 18.5 dB at 500 MHz • LOW NOISE FIGURE: 1.5 dB at 500 MHz • HIGH POWER GAIN: 12 dB at 2 GHz • LARGE DYNAMIC RANGE: 19 dBm at 1 dB, 2 GHz Gain Compression DESCRIPTION_	OCR Scan	NE021 NE02107 OT-23) 6393/FAX NE021 microwave oscillator 2SC2570 si 18752 xj-05 transistor 2sc2570 1A12 nec	PDF
5252 F 1108 Abstract: 5252 F 1008 5252 F 1004 Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5615 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN LEAD-LESS MINIMOLD FEATURES • 1005 package employed 1.0 x 0.5 × 0.5 mm • NF = 1.4 dB TYP., S21e2 = 12.0 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 1 GHz	Original	2SC5615 S21e2 2SC5615 2SC5615-T3 5252 F 1108 5252 F 1008 5252 F 1004	PDF
5252 F 0911 Abstract: 5252 F 1108 2SC5615-T3 2SC5615 5252 F 0906 Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5615 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN LEAD-LESS MINIMOLD FEATURES • 1005 package employed 1.0 x 0.5 × 0.5 mm • NF = 1.4 dB TYP., S21e2 = 12.0 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 1 GHz	Original	2SC5615 S21e2 2SC5615-T3 5252 F 0911 5252 F 1108 2SC5615-T3 2SC5615 5252 F 0906	PDF
200E Abstract: MRF1047 MRF1047T1 Text: Order this document by MRF1047T1/D NPN Silicon Low Noise Transistor • • • • • RF NPN SILICON TRANSISTOR fτ = 12 GHz NFmin = 1.0 dB ICMAX = 45 mA VCEO = 5.0 V SEMICONDUCTOR TECHNICAL DATA Low Noise Figure, NFmin = 1.0 dB Typ @1.0 GHz, 3.0 V and 3.0 mA	Original	MRF1047T1/D 03AUG01 26MAR02 200E MRF1047 MRF1047T1	PDF
5252 F 1108 Abstract: 5252 F 1104 5252 F 1120 5252 F 1103 5252 F 1114 2SC5615 5252 F 1105 5252 F 0911 5252 1101 5252 F 1105 transistor Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5615 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN LEAD-LESS MINIMOLD FEATURES • 1005 package employed 1.0 x 0.5 × 0.5 mm • NF = 1.4 dB TYP., S21e2 = 12.0 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 1 GHz	Original	2SC5615 S21e2 2SC5615-T3 5252 F 1108 5252 F 1104 5252 F 1120 5252 F 1103 5252 F 1114 2SC5615 5252 F 1105 5252 F 0911 5252 1101 5252 F 1105 transistor	PDF
transistor MJE 2955 Abstract: 842 ic SOT 663 footprint TRANSISTOR nf 842 Text: SILICON TRANSISTOR NE661M04 NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • • HIGH GAIN BANDWIDTH: fT = 25 GHz HIGH POWER GAIN: IS21EI2 = 17 dB TYP at 2 GHz • LOW NOISE FIGURE: NF = 1.2 dB at 2 GHz • HIGH MAXIMUM STABLE GAIN: 22 dB @ 2 GHz • NEW LOW PROFILE M04 PACKAGE:	Original	NE661M04 IS21EI2 OT-343 NE661M04 2e-12 1e-11 08e-12 transistor MJE 2955 842 ic SOT 663 footprint TRANSISTOR nf 842	PDF

TRANSISTOR DB 12 Search Results

TRANSISTOR DB 12 Result Highlights (5)

TRANSISTOR DB 12 Datasheets Context Search

transistor BF 697

TRANSISTOR C 4460

AT-41511

nf 820

550 902

136.21

transistor

AF 109 R

AT41511-BLK

Untitled

200E

transistor D 2394

AT-42010

2SC3357-T1-A

LB 1639

SAA 1006

nec 2501

NE021 microwave oscillator

NE021 microwave oscillator

5252 F 1108

5252 F 0911

200E

5252 F 1108

transistor MJE 2955