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    TRANSISTOR DATASHEET S PARAMETERS NOISE Search Results

    TRANSISTOR DATASHEET S PARAMETERS NOISE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR DATASHEET S PARAMETERS NOISE Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    TF135

    Abstract: bf308
    Text: FPNH10 FPNH10 C TO-92 BE NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 µA to 20 mA range in common emitter or common base mode of operations, and in low frequency drift, high output UHF oscillators. Sourced from Process 42.


    Original     		FPNH10 TF135 bf308 PDF

    Untitled

    Abstract: No abstract text available
    Text: FPNH10 FPNH10 C TO-92 BE NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 µA to 20 mA range in common emitter or common base mode of operations, and in low frequency drift, high output UHF oscillators. Sourced from Process 42.


    Original     		FPNH10 PDF

    Untitled

    Abstract: No abstract text available
    Text: Data sheet AS1374 200mA, Ultra-Low-Noise, High-PSRR, Dual Low Dropout Regulators 1 General Description 2 Key Features The AS1374 is a ultra-low-noise, low-dropout linear regulator with two seperated outputs. Specifically designed to deliver 200mA continuous output current at each output pin. The LDOs can achieve a


    Original     		AS1374 200mA, AS1374 200mA 120mV com/LDOs/AS1374 PDF

    y-parameter

    Abstract: common base amplifier circuit designing FPNH10 TRANSISTOR C 3223
    Text: FPNH10 FPNH10 C TO-92 BE NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 µA to 20 mA range in common emitter or common base mode of operations, and in low frequency drift, high output UHF oscillators. Sourced from Process 42.


    Original     		FPNH10 y-parameter common base amplifier circuit designing FPNH10 TRANSISTOR C 3223 PDF

    NPN rf transistor

    Abstract: FPNH10
    Text: FPNH10 FPNH10 C TO-92 BE NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 µA to 20 mA range in common emitter or common base mode of operations, and in low frequency drift, high output UHF oscillators. Sourced from Process 42.


    Original     		FPNH10 NPN rf transistor FPNH10 PDF

    rf transistor mark code H1

    Abstract: CBVK741B019 F63TNR MMBTH11 MPSH11 PN2222N Q100 Z-235 D3000
    Text: MPSH11 / MMBTH11 MPSH11 MMBTH11 C E C B TO-92 E B SOT-23 Mark: 3G NPN RF Transistor This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100 µA to 10 mA range to 300 MHz, and low frequency drift commonbase VHF oscillator applications with high output levels for


    Original     		MPSH11 MMBTH11 MPSH11 OT-23 rf transistor mark code H1 CBVK741B019 F63TNR MMBTH11 PN2222N Q100 Z-235 D3000 PDF

    CBVK741B019

    Abstract: F63TNR MMBTH11 MPSH11 PN2222N Q100 Z-235 transistor 26
    Text: MPSH11 / MMBTH11 MPSH11 MMBTH11 C E C B TO-92 E B SOT-23 Mark: 3G NPN RF Transistor This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100 µA to 10 mA range to 300 MHz, and low frequency drift commonbase VHF oscillator applications with high output levels for


    Original     		MPSH11 MMBTH11 MPSH11 OT-23 CBVK741B019 F63TNR MMBTH11 PN2222N Q100 Z-235 transistor 26 PDF

    MPSH10 fairchild transistor

    Abstract: MPSH10 MMBTH10 Spice Model transistor top mark 3E L transistor bel 100 CBVK741B019 F63TNR MMBTH10 PN2222N TRANSISTOR C 3223
    Text: MPSH10 / MMBTH10 MPSH10 MMBTH10 C E C E TO-92 B B SOT-23 Mark: 3E NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 µA to 20 mA range in common emitter or common base mode of operations, and in low frequency


    Original     		MPSH10 MMBTH10 MPSH10 OT-23 MPSH10 fairchild transistor MMBTH10 Spice Model transistor top mark 3E L transistor bel 100 CBVK741B019 F63TNR MMBTH10 PN2222N TRANSISTOR C 3223 PDF

    CBVK741B019

    Abstract: F63TNR MMBTH10 MPSH10 PN2222N PAP transistor power high frequency transistor bel 100 rf transistor mark code H1
    Text: MPSH10 / MMBTH10 MPSH10 MMBTH10 C E C E TO-92 B B SOT-23 Mark: 3E NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 µA to 20 mA range in common emitter or common base mode of operations, and in low frequency


    Original     		MPSH10 MMBTH10 MPSH10 OT-23 CBVK741B019 F63TNR MMBTH10 PN2222N PAP transistor power high frequency transistor bel 100 rf transistor mark code H1 PDF

    MPSH10 s parameters

    Abstract: No abstract text available
    Text: MPSH10 / MMBTH10 MPSH10 MMBTH10 C E C E TO-92 B B SOT-23 Mark: 3E NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 µA to 20 mA range in common emitter or common base mode of operations, and in low frequency


    Original     		MPSH10 MMBTH10 MPSH10 OT-23 MPSH10 s parameters PDF

    A 103 TRANSISTOR pinout

    Abstract: J-STD-020D
    Text: Datasheet AS1374 200mA, Ultra-Low-Noise, High-PSRR, Dual Low Dropout Regulators 1 General Description 2 Key Features The AS1374 is a ultra-low-noise, low-dropout linear regulator with two seperated outputs. Specifically designed to deliver 200mA continuous output current at each output pin. The LDOs can achieve a low 120mV dropout for


    Original     		AS1374 200mA, AS1374 200mA 120mV A 103 TRANSISTOR pinout J-STD-020D PDF

    J-STD-020D

    Abstract: No abstract text available
    Text: Data sheet AS1374 200mA, Ultra-Low-Noise, High-PSRR, Dual Low Dropout Regulators 1 General Description 2 Key Features The AS1374 is a ultra-low-noise, low-dropout linear regulator with two seperated outputs. Specifically designed to deliver 200mA continuous output current at each output pin. The LDOs can achieve a low 120mV dropout for


    Original     		AS1374 200mA, AS1374 100Hz 100kHz 120mV 200mA com/LDOs/AS1374 J-STD-020D PDF

    AS1359

    Abstract: AS1358 J-STD-020D TSOT23
    Text: Datasheet AS1358/AS1359 150mA/300mA, Ultra-Low-Noise, High-PSRR Low Dropout Regulators 1 General Description 2 Key Features The AS1358/AS1359 are ultra-low-noise, low-dropout linear regulators specifically designed to deliver up to 150/300mA continuous output current, and can achieve


    Original     		AS1358/AS1359 150mA/300mA, 100Hz 100kHz 140mV 300mA AS1358/AS1359 150/300mA 140mV AS1359 AS1358 J-STD-020D TSOT23 PDF

    MAT03-903H

    Abstract: "Dual PNP Transistor" MAT03-903L GDFP1-F10 "PNP Transistor" Dual PNP Transistor MAT03 903h
    Text: Tuesday, Feb 26, 2008 3:48 PM / Low noise, matched, dual PNP transistor MAT03 1.0 SCOPE This specification documents the detail requirements for space qualified product manufactured on Analog Devices, Inc.'s QML certified line per MIL-PRF-38535 Level V except as modified herein.


    Original     		MAT03 MIL-PRF-38535 com/MAT03 ASD0011414 MAT03-903H "Dual PNP Transistor" MAT03-903L GDFP1-F10 "PNP Transistor" Dual PNP Transistor MAT03 903h PDF

    Untitled

    Abstract: No abstract text available
    Text: Datasheet AS1361/AS1362 150mA/300mA, Ultra-Low-Noise, High-PSRR Low Dropout Regulators, with POK 2 Key Features 1 General Description The AS1361/AS1362 are ultra-low-noise, low-dropout linear regulators specifically designed to deliver up to 150/300mA continuous output current, and can achieve


    Original     		AS1361/AS1362 150mA/300mA, AS1361/AS1362 150/300mA 140mV 300mA 100Hz 100kHz 140mV PDF

    AS1361

    Abstract: AS1362 J-STD-020D TSOT23
    Text: Datasheet AS1361/AS1362 150mA/300mA, Ultra-Low-Noise, High-PSRR Low Dropout Regulators, with POK 1 General Description 2 Key Features The AS1361/AS1362 are ultra-low-noise, low-dropout linear regulators specifically designed to deliver up to 150/300mA continuous output current, and can achieve


    Original     		AS1361/AS1362 150mA/300mA, 140mV 300mA 100Hz 100kHz AS1361/AS1362 150/300mA 140mV AS1361 AS1362 J-STD-020D TSOT23 PDF

    6943-3

    Abstract: No abstract text available
    Text: P - HEMT Transistor CFH800 Preliminary Datasheet Features ? Low noise figure and high associated gain for high IP3 receiver stages up to 4GHz Suitable for PCS CDMA and UMTS applications


    Original     		OT343 CFH800 Rn/50 6943-3 PDF

    transistor Zo 105

    Abstract: 6943-3 55086 HEMT marking P 05973
    Text: P - HEMT Transistor CFH800 Preliminary Datasheet Features • • • • Low noise figure and high associated gain for high IP3 receiver stages up to 4GHz


    Original     		OT343 CFH800 OT343 D-130 Rn/50 transistor Zo 105 6943-3 55086 HEMT marking P 05973 PDF

    BFR740L3RH

    Abstract: BFR705L3RH AN077
    Text: BFR740L3RH NPN Silicon Germanium RF Transistor • High gain ultra low noise RF transistor • Extremly small and flat leadless package, 3 height 0.32 mm, ideal for modules 1 2 • Provides outstanding performance for wireless applications up to 10 GHz • Ideal for WLAN applications,


    Original     		BFR740L3RH BFR740L3RH BFR705L3RH AN077 PDF

    BFR106

    Abstract: Low Noise R.F AN077 BCW66
    Text: BFR106 NPN Silicon RF Transistor • High linearity low noise RF transistor • 22dBm OP1dB and 31dBm OIP3 2 3 @ 900MHz,8V,70mA 1 • For UHF/VHF applications • Driver for multistage amplifiers • For linear broadband and antenna amplifiers • Collector design supports 5 V supply voltage


    Original     		BFR106 22dBm 31dBm 900MHz BFR106 Low Noise R.F AN077 BCW66 PDF

    Untitled

    Abstract: No abstract text available
    Text: BFP450 Linear Low Noise Silicon Bipolar RF Transistor Datasheet Revision 1.2, 2013-07-29 RF & Protection Devices Edition 2013-07-29 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer


    Original     		BFP450 OT343 OT343-PO OT343-FP BFP450: OT323-TP PDF

    MAT02-903H

    Abstract: MAT02-913H MAT02 mat-02
    Text: Friday, Mar 7, 2008 9:07 AM / Low-noise, matched dual monolithic transistor MAT02 1.0 SCOPE This specification documents the detail requirements for space qualified product manufactured on Analog Devices, Inc.'s QML certified line per MIL-PRF-38535 Level V except as modified herein.


    Original     		MAT02 MIL-PRF-38535 com/MAT02 ASD0011413 MAT02-903H MAT02-913H MAT02 mat-02 PDF

    Untitled

    Abstract: No abstract text available
    Text: Thursday, May 8, 2008 3:43 PM / Low-noise, matched dual monolithic transistor MAT02 1.0 SCOPE This specification documents the detail requirements for space qualified product manufactured on Analog Devices, Inc.'s QML certified line per MIL-PRF-38535 Level V except as modified herein.


    Original     		MAT02 MIL-PRF-38535 com/MAT02 10mAd ASD0011413 PDF

    Untitled

    Abstract: No abstract text available
    Text: Datasheet AS1374 D u a l 2 0 0 m A , L o w - N o i s e , H i g h - P S RR , L o w D r o p o u t R e g u l a t o r s 2 Key Features 1 General Description The AS1374 is a low-noise, low-dropout linear regulator with two separated outputs. Designed to deliver 200mA continuous output


    Original     		AS1374 AS1374 200mA 120mV com/LDOs/AS1374 PDF