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    Nichicon Corporation TVX1H010MAD

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    Nichicon Corporation TVX2D010MAD

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    Bristol Electronics TVX2A010MAD 194
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    10MAD Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: MMBT3904 NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE POWER 40 Volts 225 mWatts SOT-23 Unit inch mm FEATURES • NPN epitaxial silicon, planar design 0.120(3.04) • Collector-emitter voltage VCE = 40V 0.110(2.80) • Collector current IC = 200mA • Transition frequency f T >300MHz @ I C =10mAdc,


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    PDF MMBT3904 OT-23 200mA 300MHz 10mAdc, 20Vdc 100MHz 2002/95/EC IEC61249 OT-23,

    MMBT3904

    Abstract: No abstract text available
    Text: MMBT3904 NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE POWER 40 Volts 225 mWatts SOT-23 Unit:inch mm FEATURES • NPN epitaxial silicon, planar design 0.120(3.04) • Collector-emitter voltage VCE = 40V 0.110(2.80) • Collector current IC = 200mA • Transition frequency f T >300MHz @ I C =10mAdc,


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    PDF MMBT3904 200mA 300MHz 10mAdc, 20Vdc 100MHz 2002/95/EC IEC61249 OT-23 OT-23, MMBT3904

    NL8060BC31-42

    Abstract: lcd 15.4 inverter
    Text: 10mAD3596 Specifications and Applications Information 04/20/07 10m Class Two Lamp DC to AC Inverter Preliminary The ERG 10mAD3596 10m Class low profile dc to ac inverter is specifically designed to power the the following display module(s) to a moderate


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    PDF 10mAD3596 NL8060BC31-42 10mAD lcd 15.4 inverter

    NL10276BC30-24D

    Abstract: lcd 15.4 inverter
    Text: 10mAD3383F Specifications and Applications Information 02/28/08 10m Class Two Lamp DC to AC Inverter Preliminary The ERG 10mAD3383F 10m Class low profile dc to ac inverter is specifically designed to power the the following display module(s) to a moderate


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    PDF 10mAD3383F NL10276BC30-24D 10mAD NL10276BC30-24D lcd 15.4 inverter

    12 volt dc to 230 volt ac inverter

    Abstract: NL10276BC30-24D lcd 15.4 inverter
    Text: 10mAD3382 Specifications and Applications Information 07/21/08 10m Class Two Lamp DC to AC Inverter Preliminary The ERG 10mAD3382 10m Class low profile dc to ac inverter is specifically designed to power the the following display module(s) to a moderate


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    PDF 10mAD3382 NL10276BC30-24D 10mAD 12 volt dc to 230 volt ac inverter NL10276BC30-24D lcd 15.4 inverter

    Untitled

    Abstract: No abstract text available
    Text: MMBT3904 NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE POWER 40 Volts 225 mWatts FEATURES • NPN epitaxial silicon, planar design • Collector-emitter voltage VCE = 40V • Collector current IC = 200mA • Transition frequency f T >300MHz @ I C =10mAdc,


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    PDF MMBT3904 200mA 300MHz 10mAdc, 20Vdc 100MHz 2002/95/EC OT-23, MIL-STD-750,

    "marking s1a" sot-23

    Abstract: 1N916 MMBT3904 MMBT3904 40V SOT23 transistor marking s1a
    Text: MMBT3904 NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE POWER 40 Volts 225 mWatts FEATURES • NPN epitaxial silicon, planar design • Collector-emitter voltage VCE = 40V • Collector current IC = 200mA • Transition frequency f T >300MHz @ I C =10mAdc,


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    PDF MMBT3904 200mA 300MHz 10mAdc, 20Vdc 100MHz 2002/95/EC OT-23, MIL-STD-750, "marking s1a" sot-23 1N916 MMBT3904 MMBT3904 40V SOT23 transistor marking s1a

    NL10276BC30-24D

    Abstract: lcd 15.4 inverter
    Text: 10mAD3383 Specifications and Applications Information 02/28/08 10m Class Two Lamp DC to AC Inverter Preliminary The ERG 10mAD3383 10m Class low profile dc to ac inverter is specifically designed to power the the following display module(s) to a moderate


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    PDF 10mAD3383 NL10276BC30-24D 10mAD NL10276BC30-24D lcd 15.4 inverter

    K1010

    Abstract: FB0803 e 420 DCK-1010
    Text: FB0803 扩散硅型压力变送器 一技术指标 使用对象 液体、气体或蒸汽 表压:0~5KPa~3.5MPa , 密封表压:0~7MPa~120MPa 测量范围 绝压: 0~20KPa120Mpa , 负压:-100KPa700KPa 输出 4~20mADC,可提供 0-10mADC,0-5VDC,1-5VDC 等形式


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    PDF FB0803 05KPa3 07MPa120MPa 020KPa120Mpa -100KPa700KPa 420mADC 0-10mADC 1530VDC( 420mADC 20-200Hz K1010 FB0803 e 420 DCK-1010

    Untitled

    Abstract: No abstract text available
    Text: AM7203 Diodes Matched Configuration Diode Semiconductor MaterialSilicon Package StyleBR-2w Mounting StyleT DescriptionPair;PIV 100V;trr 50ns;If 50mA;C 4.0pf;If match 5.0mA-10mAdc.


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    PDF AM7203 0mA-10mAdc.

    Untitled

    Abstract: No abstract text available
    Text: AM7208 Diodes Matched Configuration Diode Semiconductor MaterialSilicon Package StyleBR-2w Mounting StyleT DescriptionQuad;PIV 100V;trr 50ns;If 50mA;C 4.0pf;If match 5.0mA-10mAdc.


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    PDF AM7208 0mA-10mAdc.

    2N2907 application notes

    Abstract: 2N2907 a TRANSISTOR
    Text: MCC 2N2907 2N2907A   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components Features • • • High current max.600mA Low voltage (max.60V) Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates


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    PDF 2N2907 2N2907A 600mA) 2N2907A 2N2907 application notes 2N2907 a TRANSISTOR

    2N4403 noise figure

    Abstract: No abstract text available
    Text: 2N4403 TO - 92 BIPOLAR TRANSISTORS TRANSISTOR PNP FEATURES min. 0.49 (12.5) 0.18 (4.6) MECHANICAL DATA * * * * * 0.14 (3.6) 0.18 (4.6) * Power dissipation O PCM: 0.6 W(Tamb=25 C) * Collector current ICM: - 0.6 A * Collector-base voltage V(BR)CBO: - 40 V * Operating and storage junction temperature range


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    PDF 2N4403 -55OC 150OC MIL-STD-202E 583-2N4403 2N4403 noise figure

    2N2484UA

    Abstract: 2N2484 2N2484UB 50VDC 2N2484UBC
    Text: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN SILICON LOW POWER TRANSISTOR Qualified per MIL-PRF-19500/376 DEVICES LEVELS 2N2484UA 2N2484UB 2N2484UBC * JAN


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    PDF MIL-PRF-19500/376 2N2484UA 2N2484UB 2N2484UBC 500Adc, 30MHz 100kHz T4-LDS-0058 2N2484UA 2N2484 2N2484UB 50VDC 2N2484UBC

    pressure vessel

    Abstract: NEGATIVE Pressure TranSMITTER 4 WIRE Pressure transmitter 4 WIRE LD500 M12X1 M20X1 DIAPHRAGM PUMP pressure oil gauge sensor wheatstone bridge in pressure sensor anti-lighting
    Text: LD500 pressure transmitter Description LD500 pressure transmitter adopts the high accurate and stable isolation sensors from USA, which combine solid-state integration technique with isolation diaphragm technique. The product preserves high sensitivity, linearity and stability even


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    PDF LD500 420mADC 15VDC range01reakdown. LD500 M20X1 M12X1 pressure vessel NEGATIVE Pressure TranSMITTER 4 WIRE Pressure transmitter 4 WIRE M12X1 DIAPHRAGM PUMP pressure oil gauge sensor wheatstone bridge in pressure sensor anti-lighting

    Untitled

    Abstract: No abstract text available
    Text: Formosa MS SMD Schottky Barrier Diode BAT54X List List. 1 Package outline. 2 Features. 2


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    PDF BAT54X MIL-STD-750D METHOD-1051 1000hrs. METHOD-1038 METHOD-1031 METHOD-1056

    Untitled

    Abstract: No abstract text available
    Text: SPD48 thru SPD51 Solid State Devices, Inc. Series 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: 562 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com DESIGNER’S DATA SHEET 200 mAMP 50-125 Volts 5 nsec Part Number / Ordering Information 1/


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    PDF SPD48 SPD51 10mADC 100mADC RH0085G

    bav99

    Abstract: smd diode marking jc sot23
    Text: SMD Switching Diode BAL99/BAV99/BAW56/BAV70 Formosa MS List List. 1 Package outline. 2


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    PDF BAL99/BAV99/BAW56/BAV70 JESD22-A102 MIL-STD-750D METHOD-1051 METHOD-1056 METHOD-4066-2 1000hrs. bav99 smd diode marking jc sot23

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2N4401 Features • Lead Free Finish/RoHS Compliant "P" Suffix designates RoHS Compliant. See ordering information


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    PDF 2N4401 600mWatts -55oC 150oC

    MSD7000

    Abstract: MSD700 LMBT6520LT1G
    Text: LESHAN RADIO COMPANY, LTD. High Voltage Transistor We declare that the material of product compliance with RoHS requirements. LMBT6520LT1G Ordering Information Device Marking Shipping LMBT6520LT1G 2Z 3000/Tape&Reel LMBT6520LT3G 2Z 10000/Tape&Reel 3 1 2 MAXIMUM RATINGS


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    PDF LMBT6520LT1G 3000/Tape LMBT6520LT3G 10000/Tape OT-23 MSD7000 MSD700 LMBT6520LT1G

    SC-89

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon FEATURE LMBT3904TT1G ƽSimplifies Circuit Design. ƽ We declare that the material of product compliance with RoHS requirements. ORDERING INFORMATION 3 Device Marking Shipping LMBT3904TT1G MA


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    PDF LMBT3904TT1G 3000/Tape LMBT3904TT3G 10000/Tape SC-89 463C-01 463C-02. SC-89

    MMBL914H

    Abstract: No abstract text available
    Text: MMBL914H SOD-323 1 WEITRON http://www.weitron.com.tw MMBL914H Maximum Ratings Rating Symbol Value Unit Reverse Voltage VR 100 Vdc Forward Current IF 200 mAdc IFM Surge 500 mAdc Symbol Max Unit Total Device Dissipation FR-5 Board TA=25 C Derate Above 25 C


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    PDF MMBL914H OD-323 MMBL914H

    MD986

    Abstract: MD986F MD966 508 die 610-A03
    Text: MD9 8 6 silicon MD9 8 6 F NPN/PNP SILICON M ULTIPLE TRANSISTORS M ULTIPLE SILICON ANNULAR TRANSISTORS . . . designed for use as switches, dual general-purpose amplifiers, front end detectors and in temperature compensation applications. • Low Collector-Emitter Saturation Voltage -V cE(sat) ~ 0.3 Vdc (Max) @ I q = 10mAdc


    OCR Scan
    PDF MD986 MD986F 10MAdc, MD986F 300ms. MD986 MD966 508 die 610-A03

    MMBTH10

    Abstract: t-31-21 MMBTA92 MMBTH11 MPSH10 MPSH11 MPSW92 T3121 MPS-H10 national
    Text: NATL SEMICOND HE DISCRETE D I bS01130 0Q37273 7 | National Semiconductor <n T -3 I-I7 £ IO < ro MPSA92 MPSW92 MMBTA92 I<o ro TO-236 SOT-23 TL/G/10100-5 PNP High Voltage Amplifier Electrical Characteristics Ta Symbol = 25°C unless otherwise noted Parameter


    OCR Scan
    PDF MPSW92 bS01130 0Q37273 r-31-n MMBTA92 TL/G/10100-1 O-226AE O-236 OT-23) TL/G/10100-5 MMBTH10 t-31-21 MMBTA92 MMBTH11 MPSH10 MPSH11 MPSW92 T3121 MPS-H10 national