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    TRANSISTOR D130 Search Results

    TRANSISTOR D130 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR D130 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    d1297

    Abstract: d1308 2SK2357 2SK2358 C10535E C11531E
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2357/2SK2358 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2357/2SK2358 is N-Channel MOS Field Effect Transistor in millimeters designed for high voltage switching applications.


    Original     		2SK2357/2SK2358 2SK2357/2SK2358 2SK2357/2358) 2SK2358: O-220 d1297 d1308 2SK2357 2SK2358 C10535E C11531E PDF

    2SK3055

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3055 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for high current switching applications. PART NUMBER PACKAGE 2SK3055


    Original     		2SK3055 O-220 O-220 2SK3055 PDF

    sx3704

    Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
    Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide


    OCR Scan     		PDF

    d1308

    Abstract: d1297 D12971E 2SK2411 2SK2411-Z C10535E C11531E MP-25 MP-25Z
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2411, 2SK2411-Z SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2411 is N-Channel MOS Field Effect Transistor designed in millimeter 3.0 ±0.3 for high speed switching applications.


    Original     		2SK2411, 2SK2411-Z 2SK2411 d1308 d1297 D12971E 2SK2411-Z C10535E C11531E MP-25 MP-25Z PDF

    A1727

    Abstract: 2SK3057
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3057 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION The 2SK3057 product is N-Channel MOS Field Effect PART NUMBER PACKAGE 2SK3057 Isolated TO-220 Transistor designed for high current switching application.


    Original     		2SK3057 2SK3057 O-220 O-220) O-220 A1727 PDF

    2SK3057

    Abstract: A1727
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3057 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION This product is N-Channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SK3057 Isolated TO-220 designed for high current switching application.


    Original     		2SK3057 O-220 O-220 2SK3057 A1727 PDF

    2SK3055

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3055 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION This product is N-Channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SK3055 Isolated TO-220 designed for high current switching applications.


    Original     		2SK3055 O-220 O-220) O-220 2SK3055 PDF

    2SK3059

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3059 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION The 2SK3059 is N-Channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SK3059 Isolated TO-220 designed for high current switching applications.


    Original     		2SK3059 2SK3059 O-220 O-220) O-220 PDF

    2SK3056

    Abstract: 2SK3056-S 2SK3056-Z 2SK3056-ZJ MP-25 MP-25Z
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3056 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION The 2SK3056 is N-Channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SK3056 TO-220AB 2SK3056-S TO-262 2SK3056-ZJ TO-263 2SK3056-Z


    Original     		2SK3056 2SK3056 O-220AB 2SK3056-S O-262 2SK3056-ZJ O-263 2SK3056-Z O-220SMD 2SK3056-S 2SK3056-Z 2SK3056-ZJ MP-25 MP-25Z PDF

    D1309

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3060 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION The 2SK3060 is N-Channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SK3060 TO-220AB FEATURES 2SK3060-S TO-262 • Low on-state resistance


    Original     		2SK3060 2SK3060 O-220AB 2SK3060-S O-262 2SK3060-ZJ O-263 2SK3060-Z O-220SMDNote D1309 PDF

    2SK3060

    Abstract: 2SK3060-ZJ MP-25 MP-25Z 2SK3060-S 2SK3060-Z
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3060 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION The 2SK3060 is N-Channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SK3060 TO-220AB FEATURES 2SK3060-S TO-262 • Low on-state resistance


    Original     		2SK3060 2SK3060 O-220AB 2SK3060-S O-262 2SK3060-ZJ O-263 2SK3060-Z O-220SMDNote 2SK3060-ZJ MP-25 MP-25Z 2SK3060-S 2SK3060-Z PDF

    2SK3056

    Abstract: 2SK3056-S 2SK3056-ZJ MP-25
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3056 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION This product is N-Channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SK3056 TO-220AB FEATURES 2SK3056-S TO-262 • Low On-State Resistance


    Original     		2SK3056 O-220AB 2SK3056-S O-262 2SK3056-ZJ O-263 2SK3056 2SK3056-S 2SK3056-ZJ MP-25 PDF

    2SK3058

    Abstract: 2SK3058-S 2SK3058-ZJ MP-25
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3058 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION This product is N-Channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SK3058 TO-220AB FEATURES 2SK3058-S TO-262 • Super Low On-State Resistance


    Original     		2SK3058 O-220AB 2SK3058-S O-262 2SK3058-ZJ O-263 2SK3058 2SK3058-S 2SK3058-ZJ MP-25 PDF

    2SK3058

    Abstract: 2SK3058-S 2SK3058-Z 2SK3058-ZJ MP-25 MP-25Z
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3058 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION This product is N-Channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SK3058 TO-220AB FEATURES 2SK3058-S TO-262 • Super Low On-State Resistance


    Original     		2SK3058 O-220AB 2SK3058-S O-262 2SK3058-ZJ O-263 2SK3058-Z O-220SMD O-220SND 2SK3058 2SK3058-S 2SK3058-Z 2SK3058-ZJ MP-25 MP-25Z PDF

    d1308

    Abstract: d1297 2SK2414 2SK2414-Z C10535E C10943X C11531E MEI-1202 2SK2414Z
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2414, 2SK2414-Z SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2414 is N-Channel MOS Field Effect Transistor designed PACKAGE DIMENSIONS in millimeter 5.0 ±0.2 FEATURES 1 2 3 RDS(on)2 = 95 mΩ MAX. (@ VGS = 4 V, ID = 5.0 A)


    Original     		2SK2414, 2SK2414-Z 2SK2414 d1308 d1297 2SK2414-Z C10535E C10943X C11531E MEI-1202 2SK2414Z PDF

    2SA2209

    Abstract: 2SA22 2sa220
    Text: 2SA2209 Ordering number : ENA0235 SANYO Semiconductors DATA SHEET PNP Epitaxial Planar Silicon Transistor 2SA2209 50V / 15A High-Speed Switching Applications Applications • High-speed switching applications switching regulator, driver circuit . Features


    Original     		2SA2209 ENA0235 A0235-4/4 2SA2209 2SA22 2sa220 PDF

    2SA22

    Abstract: 2sa220 2SA2207
    Text: 2SA2207 Ordering number : ENA0233 SANYO Semiconductors DATA SHEET 2SA2207 PNP Epitaxial Planar Silicon Transistor 50V / 13A High-Speed Switching Applications Applications • High-speed switching applications switching regulators, drive circuit . Features


    Original     		2SA2207 ENA0233 A0233-4/4 2SA22 2sa220 2SA2207 PDF

    2SC6084

    Abstract: No abstract text available
    Text: 2SC6084 Ordering number : ENA0630 SANYO Semiconductors DATA SHEET 2SC6084 NPN Triple Diffused Planar Silicon Transistor Switching Regulator Applications Features • • • • High speed. High breakdown voltage VCBO=1500V . High reliability (Adoption of HVP process).


    Original     		2SC6084 ENA0630 A0630-4/4 2SC6084 PDF

    2SC6116LS

    Abstract: No abstract text available
    Text: 2SC6116LS Ordering number : ENA0579 SANYO Semiconductors DATA SHEET NPN Triple Diffused Planar Silicon Transistor 2SC6116LS Color TV Horizontal Deflection Output Applications Features • • • • • High speed. High breakdown voltage VCBO=1500V . High reliability (Adoption of HVP process).


    Original     		2SC6116LS ENA0579 A0579-4/4 2SC6116LS PDF

    D13005

    Abstract: D13005 transistor datasheet D13005 transistor transistor D13005 STD13005 D13005 MS STD13005T4 D13005 E 12-Nov-2009 10DoC
    Text: STD13005 High voltage fast-switching NPN power transistor Preliminary data Features • High voltage capability ■ Low spread of dynamic parameters ■ Very high switching speed TAB 3 Application ■ 1 Switch mode power supplies AC-DC converters DPAK TO-252


    Original     		STD13005 O-252 STD13005T4 D13005 D13005 D13005 transistor datasheet D13005 transistor transistor D13005 STD13005 D13005 MS STD13005T4 D13005 E 12-Nov-2009 10DoC PDF

    D13005

    Abstract: D13005 transistor D13005 E datasheet D13005 transistor transistor D13005 STD13005T4 STD13005 d1 marking code dpak transistor
    Text: STD13005 High voltage fast-switching NPN power transistor Preliminary data Features • High voltage capability ■ Low spread of dynamic parameters ■ Very high switching speed TAB 3 Application ■ 1 Switch mode power supplies AC-DC converters DPAK TO-252


    Original     		STD13005 O-252 D13005 D13005 transistor D13005 E datasheet D13005 transistor transistor D13005 STD13005T4 STD13005 d1 marking code dpak transistor PDF

    MP 35A DIODE

    Abstract: 2SK3060 MP-25 MP-25Z D1309
    Text: PRELIMINARY PRODUCT INFORMATION M O S Field Effect Power Transistors 2SK3060 SW ITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE PACKAG E DIM EN SIO NS in m illim eter 10.6 MAX. 4.8 MAX. 03.6*0.2 DESCRIPTION This product is N-Channel M OS Field Effect Transistor de­


    OCR Scan     		2SK3060 MP 35A DIODE MP-25 MP-25Z D1309 PDF

    D13003H

    Abstract: d13003 Jilin Sino-Microelectronics Jilin jili npn transister transister 3DD13003H 3DD13003 POWER TRANSISTER
    Text: HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTER D13003H Characteristic/features ◆High breakdown voltage ◆High current capability ◆High switching speed ◆High reliability Application ◆Energy-saving light ◆Electronic ballasts ◆High frequency switching power supply


    Original     		D13003H 3DD13003H Zip132013 Tel864324678411 D13003H d13003 Jilin Sino-Microelectronics Jilin jili npn transister transister 3DD13003 POWER TRANSISTER PDF

    D13001S

    Abstract: 3DD13001S 3DD13001 transister Jilin Sino-Microelectronics d13001 Jilin
    Text: HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTER D13001S Characteristic/features ◆High breakdown voltage ◆High current capability ◆High switching speed ◆High reliability Application ◆Energy-saving light ◆Electronic ballasts ◆High frequency switching power supply


    Original     		D13001S 3DD13001S Zip132013 Tel864324678411 D13001S 3DD13001 transister Jilin Sino-Microelectronics d13001 Jilin PDF