Untitled
Abstract: No abstract text available
Text: 3DD13003B 1.5A , 700V NPN Plastic-Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES TO-92 Power switching applications A D REF. B A B C D E F G H J K Collector 2 E C G H F 3
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3DD13003B
400mA
500mA
100mA
100mA,
15-Jun-2011
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3dd13003
Abstract: No abstract text available
Text: 华晶分立器件 3DD13003 F6 低频放大管壳额定双极型晶体管 1 概述与特点 4.4max 3DD13003(F6)硅 NPN 型功率开关晶体管 主要用于电子节能灯 电子镇流器的功率开关电路 其特点如下 击穿电压高 反向漏电小
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3DD13003
3DD13003
O-126
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3dd13003
Abstract: UI9600
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors TO-220 3DD13003 TRANSISTOR NPN 1. BASE FEATURES 2. COLLECTOR • power switching applications 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Parameter
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O-220
O-220
3DD13003
100mA,
250mA
UI9600)
3DD13003
UI9600
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 3DD13003N96 TO-92 TRANSISTOR NPN FEATURES z Power switching applications z Good high temperature z Low saturation voltage z High speed switching 1. BASE 2. COLLECTOR
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3DD13003N96
250mA
UI9600)
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251 Plastic-Encapsulate Transistors 3DD13003LD36 TRANSISTOR NPN TO-251 FEATURES z Power switching applications z Good high temperature z Low saturation voltage z High speed switching 1.BASE 2.COLLECTOR
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O-251
3DD13003LD36
O-251
250mA
UI9600)
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors 3DD13003L3D TRANSISTOR NPN TO-126 FEATURES z Power switching applications z Good high temperature z Low saturation voltage z High speed switching 1. BASE 2. COLLECTOR
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O-126
3DD13003L3D
O-126
250mA
UI9600)
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3DD13003
Abstract: 3DD13003K7 TO-126F
Text: 华晶分立器件 3DD13003K7 低频放大管壳额定双极型晶体管 1 概述与特点 3DD13003K7 硅 NPN 型功率开关晶体管 主要用于电子节能灯 电子镇流器的功率开关电路 其特点如下 高温特性好 开关速度快 饱和压降低 电流特性好
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3DD13003K7
O-126F
16min
75max
51max
500mA
250mA
100mA
3DD13003
3DD13003K7
TO-126F
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors 3DD13003L8D TRANSISTOR NPN TO-126 FEATURES z Power switching applications z Good high temperature z Low saturation voltage z High speed switching 1. BASE 2. COLLECTOR
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O-126
3DD13003L8D
O-126
250mA
UI9600)
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 3DD13003 TRANSISTOR（ NPN ） TO—220 FEATURES Power dissipation PCM : 1.5 W（Tamb=25℃） Collector current ICM : 1.5 A Collector-base voltage V BR CBO : 700 V Operating and storage junction temperature range
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O-220
3DD13003
100TYP
540TYP
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO-92 3DD13003B TRANSISTOR NPN 1. EMITTER FEATURES 2. COLLECTOR • power switching applications 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter
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3DD13003B
100mA,
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3DD13003
Abstract: 3DD13003K8
Text: 华晶分立器件 3DD13003 K8 低频放大管壳额定双极型晶体管 1 概述与特点 3DD13003K8 硅 NPN 型功率开关晶体管 主要用于电子节能灯 电子镇流器的功率开关电路 其特点如下 具有击穿电压高 漏电流小 开关速度快
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3DD13003
3DD13003K8
O-220AB
250mA
100mA
3DD13003K8
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3DD13003B
Abstract: 3DD13003 npn transistors 400V 1A To92
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 3DD13003B TRANSISTOR NPN TO-92 FEATURES 1. EMITTER • power switching applications 2. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) 3. BASE Symbol Parameter
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3DD13003B
100mA,
3DD13003B
3DD13003
npn transistors 400V 1A To92
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Untitled
Abstract: No abstract text available
Text: TO-92 Plastic-Encapsulate Transistors 3DD13003B TRANSISTOR NPN TO-92 FEATURES • 1. EMITTER High total power disspation.(pc=0.75w) 2. COLLECTOR 3. BASE 1 2 3 MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage
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3DD13003B
1000mA
1000mA,
250mA
100mA
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3DD13002
Abstract: 3DD13003
Text: 华晶分立器件 3DD13003 B6 低频放大管壳额定双极型晶体管 1 概述与特点 3DD13003 B6 硅 NPN 型功率开关晶体管 主要用于电子节能灯 电子镇流器及手机充电器的 功率开关电路 其特点如下 击穿电压高 反向漏电小
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3DD13003
O-126
200mA
200mA,
3DD13002
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3dd13003
Abstract: No abstract text available
Text: 3DD13003 3DD13003 TRANSISTOR NPN TO-126 FEATURES Power dissipation PCM: 1.25 W (Tamb=25℃) 1. BASE Collector current ICM: 1.5 A Collector-base voltage 700 V V(BR)CBO: Operating and storage junction temperature range 2. COLLECTOR 3. EMITTER 123 TJ, Tstg: -55℃ to +150℃
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3DD13003
O-126
1000mA
1000mA,
250mA
100mA
3dd13003
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7400
Abstract: 3dd13003
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors 3DD13003 TRANSISTOR（ NPN ） TO—126 FEATURES Power dissipation PCM : 1.25 W（Tamb=25℃） Collector current ICM : 1.5 A Collector-base voltage V BR CBO : 700 V
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O-126
3DD13003
O--126
mA25-30
290TYP
090TYP
7400
3dd13003
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3dd13003
Abstract: TRANSISTOR npn ic 1000ma NPN Transistor 1.5A 400V
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 3DD13003 TO-220 TRANSISTOR NPN FEATURES 1. BASE • power switching applications 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS* TA=25℃ unless otherwise noted Parameter
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O-220
3DD13003
O-220
1000mA
1000mA,
250mA
100mA
3dd13003
TRANSISTOR npn ic 1000ma
NPN Transistor 1.5A 400V
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Untitled
Abstract: No abstract text available
Text: WEITRON 3DD13003B NPN Plastic-Encapsulate Transistor P b Lead Pb -Free 1. EMITTER 2. COLLECTOR 3. BASE FEATURES : • power switching applications TO-92 MAXIMUM RATINGS (TA=25°C unless otherwise noted) Parameter Collector-Base Voltage Collector-Emitter Voltage
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3DD13003B
100mA,
10-Nov-2010
270TYP
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 3DD13003LD16 TO-92 TRANSISTOR NPN 1. BASE FEATURES z Power switching applications z Good high temperature z Low saturation voltage z High speed switching 2. COLLECTOR
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3DD13003LD16
250mA
UI9600)
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate Transistors 3DD13003F TRANSISTOR NPN TO-220F FEATURE Power Switching Applications 1. BASE MAXIMUM RATINGS (Ta=25 ℃ unless otherwise noted) Symbol Parameter Value VCBO Collector-Base Voltage
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O-220F
3DD13003F
O-220F
250mA
100mA
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251-3L/TO-252-2L Plastic-Encapsulate Transistors TO-251-3L/TO-252-2L 3DD13003 TRANSISTOR NPN FEATURES Power Switching Applications MAXIMUM RATINGS(TA=25 ℃ unless otherwise noted) Symbol Parameter
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O-251-3L/TO-252-2L
O-251-3L/TO-252-2L
3DD13003
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L Plastic-Encapsulate Transistors TO-220-3L 3DD13003 TRANSISTOR NPN 1. BASE FEATURES 2. COLLECTOR • power switching applications 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Parameter
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O-220-3L
O-220-3L
3DD13003
100mA,
250mA
UI9600)
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors TO-220 3DD13003 TRANSISTOR NPN 1. BASE FEATURES 2. COLLECTOR • power switching applications 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Parameter
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O-220
O-220
3DD13003
100mA,
250mA
UI9600)
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TP220 transistor
Abstract: TP220
Text: M C C TP-220 P lastic-E n cap su late T r a n s is t o r s ^ 3DD13003 TRANSISTOR NPN F E ATURE S ( . I1 W _ nation J _ T0-220 Pcm: S^iirrent 1. B A S E tt +i Ic 2.C O L L E C T O R ; 1.5 A V (B R )C B O ; LU LU UJ 2 m Collector-base voltage 3.E M I T T E R
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TP-220
3DD13003
T0-220
3DD13003
TP220 transistor
TP220
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