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    JILIN Search Results

    JILIN Datasheets (49)

    Part ECAD Model Manufacturer Description Curated Type PDF
    3CT06B Jilin Sino-Microelectronics Thyristor SCR 600V 8A 3TO-92 Original PDF
    3CT12A Jilin Sino-Microelectronics Thyristor SCR 600V 150A 3TO-220 Original PDF
    3CT16S Jilin Sino-Microelectronics Thyristor TRIAC 600V 150A 3TO-220 Original PDF
    3CT1A Jilin Sino-Microelectronics Thyristor SCR 600V 15A 3TO-92 Original PDF
    3CT1S Jilin Sino-Microelectronics Thyristor TRIAC 600V 8A 3TO-92 Original PDF
    3CT2A Jilin Sino-Microelectronics Thyristor SCR 600V 20A 3TO-126 Original PDF
    3CT4S Jilin Sino-Microelectronics Thyristor TRIAC 600V 30A 3TO-126 Original PDF
    3CT8A Jilin Sino-Microelectronics Thyristor SCR 650V 100A 3TO-220 Original PDF
    3DD2101 Jilin Sino-Microelectronics TRANS GP BJT NPN 600V 5A 3 pin TO-3P Original PDF
    3DD2109 Jilin Sino-Microelectronics TRANS GP BJT NPN 500V 7A 3 pin TO-3P Original PDF
    3DD5017 Jilin Sino-Microelectronics TRANS GP BJT NPN 650V 12A 3 pin TO-3P Original PDF
    D13001A Jilin Sino-Microelectronics TRANS GP BJT NPN 400V 0.8A 3TO-92 Original PDF
    D13001S Jilin Sino-Microelectronics TRANS GP BJT NPN 400V 0.5A 3TO-92 Original PDF
    D13002E Jilin Sino-Microelectronics TRANS GP BJT NPN 400V 1A 3TO-126 Original PDF
    D13002S Jilin Sino-Microelectronics TRANS GP BJT NPN 400V 1A 3TO-126 Original PDF
    D13003H Jilin Sino-Microelectronics TRANS GP BJT NPN 400V 1.2A 3TO-126 Original PDF
    D4120PL Jilin Sino-Microelectronics TRANS GP BJT NPN 200V 0.0001A 3TO-126 Original PDF
    D4124PL Jilin Sino-Microelectronics TRANS GP BJT NPN 200V 2A 3TO-126 Original PDF
    SMM300 Jilin Guigen Electronic Monitoring and Control Technologies Intelligent Remote Transmitter Scan PDF
    SMW300 Jilin Guigen Electronic Monitoring and Control Technologies Intelligent Remote Transmitter Scan PDF

    JILIN Datasheets Context Search

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    ne555 national semiconductor

    Abstract: NE555 PIN OUT 3CT12A The device is a drop-in replacement for the NCP2820EVB DIRECT Replacement with ON SEMICONDUCTOR NCP1450AV19EVB ne555 national Jilin Sino-Microelectronics
    Text: Uploaded MPN Uploaded Supplier Crossed Part Number Crossed Manufacturer MCR12LMG ON Semiconductor 3CT12A Jilin Sino-Microelectronics NCV8502DADJG ON Semiconductor NCV8502D50G ON Semiconductor NCV8501DADJG ON Semiconductor LP2953IM LP2953IMX LP2953IM/NOPB LP2953IMX/NOPB


    Original     		PDF MCR12LMG NCV8502DADJG 3CT12A LP2953IM LP2953IMX LP2953IM/NOPB LP2953IMX/NOPB LP2953IMHALF LP2953IMXHALF LP2953IM/HAPB ne555 national semiconductor NE555 PIN OUT The device is a drop-in replacement for the NCP2820EVB DIRECT Replacement with ON SEMICONDUCTOR NCP1450AV19EVB ne555 national Jilin Sino-Microelectronics

    Jilin Sino-Microelectronics

    Abstract: 3CT8A SCR PNPN Jilin
    Text: Rever Blocking Triode Thyristors SCR R 3CT8A GENERAL DESCRIPTION ◆ Very low on-state voltage ◆ High ITSM ◆ High blocking voltage ◆ High reliability and stability PNPN devices designed for Motor control, Power converter, AC power controller, Light and temperature


    Original     		PDF Tmb109 Zip132013 Tel864324678411 Jilin Sino-Microelectronics 3CT8A SCR PNPN Jilin

    D13001S

    Abstract: 3DD13001S 3DD13001 transister Jilin Sino-Microelectronics d13001 Jilin
    Text: HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTER D13001S Characteristic/features ◆High breakdown voltage ◆High current capability ◆High switching speed ◆High reliability Application ◆Energy-saving light ◆Electronic ballasts ◆High frequency switching power supply


    Original     		PDF D13001S 3DD13001S Zip132013 Tel864324678411 D13001S 3DD13001 transister Jilin Sino-Microelectronics d13001 Jilin

    TRANSISTOR D2101

    Abstract: D2101 3DD2101 3DD2109 Transistors Bipolar NPN TO-3P
    Text: Case-rated bipolar transistor for type 3DD2109 for low frequency amplification R 3DD2101 FEATURES HIGH BREAKDOWN VOLTAGE:Vcbo=900V LOW SATURATION VOLTAGE:Vce sat =0.5V(max.) HIGH SWITCHING SPEED:tf=0.5 S(max.) HIGH RELIABILITY TO-3P(H)IS APPLICATIONS SWITCHING POWER SUPPLY FOR COLOR TV


    Original     		PDF 3DD2109 3DD2101 3DD2101 D2101 TRANSISTOR D2101 D2101 Transistors Bipolar NPN TO-3P

    D4124PL

    Abstract: Jilin Sino-Microelectronics 110V AC to 5V DC ic 3DD41 3DD4124PL 3dd4124 D412
    Text: Fast-Switching NPN Bipolar Transistor R D4124PL Characteristics ◆Middle Breakdown Voltage ◆High Current Capability ◆High Switching Speed ◆High Ruggedness Applications 110V AC ◆ Electronic Ballasts For Fluorescent Lighting ◆ Electronic Transformers


    Original     		PDF D4124PL 3DD4124PL 25TO-92 O-126) Tel864324678411 D4124PL Jilin Sino-Microelectronics 110V AC to 5V DC ic 3DD41 3dd4124 D412

    Jilin Sino-Microelectronics

    Abstract: TO92Plastic 3CT1A TJ110
    Text: Rever Blocking Triode Thyristors SCR R 3CT1A GENERAL DESCRIPTION ◆ Very low on-state voltage ◆ Highly sensitive triggering levels ◆ High ITSM ◆ High blocking voltage ◆ High reliability and stability PNPN devices designed for high volume, line-powered consumer


    Original     		PDF Zip132013 Tel864324678411 Jilin Sino-Microelectronics TO92Plastic 3CT1A TJ110

    SCR PNPN

    Abstract: TJ110 Jilin
    Text: Rever Blocking Triode Thyristors SCR R 3CT2A GENERAL DESCRIPTION ◆ Very low on-state voltage ◆ High ITSM ◆ High blocking voltage ◆ High reliability and stability PNPN devices designed for Motor control, Power converter, AC power controller, Light and temperature


    Original     		PDF Zip132013 Tel864324678411 SCR PNPN TJ110 Jilin

    LTM15C166

    Abstract: TV toshiba dramatic lq150F1 ltm14c ltm12c324 super amoled pmlcd lq133 LTM12C283 LQ150U1LH21
    Text: FPD Producer Profile Report 5.1 Sharp • History Sharp’s origins can be traced back to the formation of Hayakawa Electric Industry in 1912. Hayakawa Electric was formed by inventor Tokuji Hayakawa, who invented the world’s first mechanical pencil, the Ever-Sharp. He introduced


    Original     		PDF

    3CT12A

    Abstract: SCR PNPN Jilin Sino-Microelectronics 20F50 3CT12 12v, 40a scr
    Text: Rever Blocking Triode Thyristors SCR R 3CT12A GENERAL DESCRIPTION ◆ Very low on-state voltage ◆ High ITSM ◆ High blocking voltage ◆ High reliability and stability PNPN devices designed for Motor control, Power converter, AC power controller, Light and temperature


    Original     		PDF 3CT12A 3CT12A Tmb103 Zip132013 Tel864324678411 SCR PNPN Jilin Sino-Microelectronics 20F50 3CT12 12v, 40a scr

    d2109

    Abstract: 3DD2109 D-2109 Jilin Sino-Microelectronics jilin TO-3P
    Text: Case-rated bipolar transistor for type 3DD2109 for low frequency amplification R 3DD2109 FEATURES HIGH BREAKDOWN VOLTAGE:Vcbo=900V LOW SATURATION VOLTAGE:Vce sat =0.5V(max.) HIGH SWITCHING SPEED:tf=0.3 S(max.) HIGH RELIABILITY TO-3P(H)IS APPLICATIONS SWITCHING POWER SUPPLY FOR COLOR TV


    Original     		PDF 3DD2109 3DD2109 D2109 d2109 D-2109 Jilin Sino-Microelectronics jilin TO-3P

    3CT16S

    Abstract: Jilin Sino-Microelectronics
    Text: Silicon Bidirectional Triode Thyristors triac R 3CT16S GENERAL DESCRIPTION ◆ ◆ ◆ ◆ ◆ ◆ Blocking Voltage to 600 Volts On-State Current Rating of 15 Amperes RMS at 80℃ Uniform Gate Trigger Currents in Three Modes High Immunity to dv/dt — 500 V/ s minimum at 125℃


    Original     		PDF 3CT16S O-220AB 3CT16S Zip132013 Tel864324678411 Jilin Sino-Microelectronics

    MN101EF57G

    Abstract: MN101D10X MN103SfC2d MN103SH MN103SFE4K MN103SFE3K MN103SFa5K MN101EF31G MN101 PANASONIC 8-bit microcontrollers mn102
    Text: 2009 ver.2 Microcomputer Family AM Series 8-bit AM1 Series 16-bit AM2 Series 32-bit AM3 Series Delivers Improved Performance and Cost Savings Unified Microcomputer Architecture Common architecture shared by 8-, 16-, and 32-bit models  The products of a rigorous analysis of embedded device software and system needs, the Panasonic AM1


    Original     		PDF 16-bit 32-bit MN101) MN102) MN103) MN101EF57G MN101D10X MN103SfC2d MN103SH MN103SFE4K MN103SFE3K MN103SFa5K MN101EF31G MN101 PANASONIC 8-bit microcontrollers mn102

    AT89C1051-12PC

    Abstract: No abstract text available
    Text: AT89C1051 Features • • • • • • • • • • • • Compatible with MCS-51 Products 1 Kbytes of Reprogrammable Flash Memory Endurance: 1,000 Write/Erase Cycles Data Retention: 10 Years 2.7 V to 6 V Operating Range Fully Static Operation: 0 Hz to 24 MHz


    OCR Scan     		PDF AT89C1051 MCS-51 16-Bit AT89C1051 AT89C1051-12PC

    Untitled

    Abstract: No abstract text available
    Text: AT28C16 Features • Fast Read Access Time - 1 50ns • Fast Byte Write - 200ns or 1 ms • Self-Timed Byte Write Cycle Internal Address and Data Latches Internal Control Timer Automatic Clear Before Write • Direct Microprocessor Control DATA POLLING • Low Power


    OCR Scan     		PDF AT28C16 200ns AT28C16 organizry/883C Military/883C

    Untitled

    Abstract: No abstract text available
    Text: AT28C16 Features • • • • • • • • • • Fast Read Access Time -150 ns Fast Byte Write - 200 us or 1 ms Self-Timed Byte Write Cycle Internal Address and Data Latches Internal Control Timer Autom atic Clear Before Write Direct Microprocessor Control


    OCR Scan     		PDF AT28C16 AT28C16 Wiiitary/883C 1G74177 1D7417?

    Untitled

    Abstract: No abstract text available
    Text: Features • Single 4.5V - 5.5V Supply • Serial Interface Architecture • Page Program Operation - Single Cycle Reprogram Erase and Program - 4096 Pages (264 Bytes/Page) Main Memory • Two 264-Byte SRAM Data Buffers - Allows Receiving of Data while Reprogramming of Nonvolatile Memory


    OCR Scan     		PDF 264-Byte AT45D081 AT45D081-RC AT45D081-TC AT45D081-RI AT45D081-TI 28-Lead, 32-Lead,

    AT28PC64

    Abstract: AT28PC 920A7 AT-28PC64 10-NP at28 5962-87514 28PC64
    Text: AT28PC64 Features • • • • • • • • • • Fast Read Access Time -150 ns Automatic Page Write Operation Internal Address and Data Latches fo r 32 Bytes Internal Control Timer Fast Write Cycle Times Maximum Page Write Cycle Time: 2 ms 1 to 32 Byte Page Write Operation


    OCR Scan     		PDF AT28PC64 Military/883C 107M177 AT28PC 920A7 AT-28PC64 10-NP at28 5962-87514 28PC64

    Untitled

    Abstract: No abstract text available
    Text: A TS42VA12 Features • • High-speed EPROM-based CMOS Multi-Function PLD Two Fully Programmable Arrays Eliminate "P-term Depletion” Up to 64 P-terms per OR Function Improved Output Macro Cell Structure Individually Programmable as: Registered Output with Feedback


    OCR Scan     		PDF TS42VA12 PLC42VA12 TS42VA ATS42VA12-35DC ATS42VA12-35 ATS42VA12-35PC 24DW3

    Untitled

    Abstract: No abstract text available
    Text: AT28C256 Features • • • • • • • • • • • Fast Read Access Time -1 5 0 ns Automatic Page Write Operation Internal Address and Data Latches for 64-Bytes Internal Control Timer Fast Write Cycle Times Page Write Cycle Time: 3 ms or 10 ms Maximum


    OCR Scan     		PDF AT28C256 64-Bytes 64-Byte

    Untitled

    Abstract: No abstract text available
    Text: AT28LV256 Features • • • • • • • • • • Fast Read Access Time - 200 ns Automatic Page Write Operation Internal Address and Data Latches for 64-Bytes Internal Control Timer Fast Write Cycle Times Page Write Cycle Time: 10 ms Maximum 1 to 64-Byte Page Write Operation


    OCR Scan     		PDF AT28LV256 64-Bytes 64-Byte AT28LV256

    Untitled

    Abstract: No abstract text available
    Text: ATF20V8B Features • 1 Industry Standard Architecture Emulates Many 24-Pin PALs Low Cost Easy-to-Use Software Tools High Speed Electrically Erasable Programmable Logic Devices 7.5 ns Maximum Pin-to-Pin Delay Several Power Saving Options • • Device ATF20V8B


    OCR Scan     		PDF ATF20V8B 24-Pin ATF20V8B ATF20V8BQ ATF20V8BQL Performance20V8BQL-25SC ATF20V8BQL-25JI ATF20V8BQL-25PI ATF20V8BQL-25SI

    2745b

    Abstract: No abstract text available
    Text: ¿¡m a W IR E L E S S « U3745BM i/C UHF ASK Receiver Description The U 3745B M is a m ulti-chip PLL receiver device sup­ plied in an S 0 2 0 package. It has been specially developed for the dem ands of RF low -cost data transm ission system s w ith low data rates from 1 kB aud to 10 kBaud in M an­


    OCR Scan     		PDF U3745BM U3745B 2745B 315-M 3745B 28-Sep-00 2745b

    Untitled

    Abstract: No abstract text available
    Text: AT29C040A Features • • • • • • • • • • • • Fast Read Access Time -1 2 0 ns 5-Volt-Only Reprogramming Sector Program Operation Single Cycle Reprogram Erase and Program 2048 Sectors (256 bytes/sector) Internal Address and Data Latches for 256-Bytes


    OCR Scan     		PDF AT29C040A 256-Bytes AT29C040A AT29C040A-12TC AT29C040A-12PI AT29C040A-12TI AT29C040A-15PC AT29C040A-15TC AT29C040A-15PI AT29C040A-15TI

    Untitled

    Abstract: No abstract text available
    Text: AT28BV64 Features • • • • • • • • 2.7V to 3.6V Supply Full Read and Write Operation Low Power Dissipation 8 mA Active Current 50 nA CMOS Standby Current Read Access Time - 300 ns Byte Write - 3 ms Direct Microprocessor Control DATA Polling


    OCR Scan     		PDF AT28BV64 AT28BV64 AT28BV64-30JI AT28BV64-30PI AT28BV64-30SI AT28BV64-30TI