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    TRANSISTOR D032 Search Results

    TRANSISTOR D032 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR D032 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    nj TRANSISTOR

    Abstract: 35 15 rail en 50022 C250
    Text: 3 Interface Relays Interface Relays I1-OC Transistor Output 500mA 1N/O I1-OC Transistor Output (500mA 1N/O) Part No. Rated Voltage (Un) I1-OC-D032R I1-OC-U024R I1-OC-U230R 0.5A/70VDC 0.5A/70VDC 0.5A/70VDC 5…32VDC Coil 24VAC/DC Coil 230VAC/DC Coil Relays with transistor output up to 500 mA / 70 V DC


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    PDF 500mA I1-OC-D032R I1-OC-U024R I1-OC-U230R A/70VDC 32VDC 24VAC/DC nj TRANSISTOR 35 15 rail en 50022 C250

    F2LP-Wk4-us

    Abstract: F2LP-W10M F2LP-W20M F2LP-W50M
    Text: Inductive Ring Sensor F2LP-W Ring Sensing Head for Detecting Moving Minute Metallic Objects Detects moving metallic objects of any shape anywhere in the ring. Sensor Heads with 10-mm to 100-mm diameters available. Incorporates a 40-ms OFF-delay timer. Amplifier Unit with DIN-track mounting hooks


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    PDF 10-mm 100-mm 40-ms F2LP-W10M F2LP-W20M F2LP-W50M F2LP-W75M F2LP-W100M D032-E1-2 F2LP-Wk4-us F2LP-W10M F2LP-W20M F2LP-W50M

    transistor d032

    Abstract: relays D012 D032 coil DC 12v I1C-20BK 20BL 230V ac relay coil 5-32VDC 12vDC OUTPUT 230VAC RELAY
    Text: GENERAL PURPOSE / INTERFACE RELAYS I1-L I1-T I1-OC SPDT 6A 12V, 24V, 36V 90…230V 24V, 230V 6A @ 250VAC; 6A @ 24 VDC 8 mA @ 24 V AgSnO2 SPDT 1.2 A 5…32V N/A 24V, 230V 1.2 A @ 400 VAC 8 mA AgSnO2 SPDT 500 mA 5…32V N/A 24V, 230V 500 mA @ 70 VDC 1 mA AgSnO2


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    PDF 250VAC; I1C-20RD I1C-20BK I1C-20BL 12VDC 24VDC 230VAC transistor d032 relays D012 D032 coil DC 12v I1C-20BK 20BL 230V ac relay coil 5-32VDC 12vDC OUTPUT 230VAC RELAY

    SN0423

    Abstract: 4100 ir receiver AN243 HSDL-7000 MCP2120 MCP2122 MCP2140 MCP2150 MCP2155 TCM809
    Text: MCP2122 Infrared Encoder/Decoder Features Package Types • Pinout compatible with HSDL-7000 • Compliant with IrDA Standard Physical Layer Specification version 1.3 • UART to IrDA Standard Encoder/Decoder - Interfaces with IrDA Standard Compliant Transceiver


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    PDF MCP2122 HSDL-7000 16XCLK D-8203-1760 DS21894B-page SN0423 4100 ir receiver AN243 HSDL-7000 MCP2120 MCP2122 MCP2140 MCP2150 MCP2155 TCM809

    ir132

    Abstract: ir113 ir102b IR123 agilent d041 ir133 HSDL-7000 MCP2120 MCP2122 MCP2140
    Text: MCP2122 Infrared Encoder/Decoder Features Package Types • Pinout compatible with HSDL-7000 • Compliant with IrDA Standard Physical Layer Specification version 1.3 • UART to IrDA Standard Encoder/Decoder - Interfaces with IrDA Standard Compliant Transceiver


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    PDF MCP2122 HSDL-7000 16XCLK D-85737 NL-5152 DS21894A-page ir132 ir113 ir102b IR123 agilent d041 ir133 HSDL-7000 MCP2120 MCP2122 MCP2140

    BFY90 PHILIPS

    Abstract: BFY90
    Text: Philips Semiconductors Product specification bbSBIBl D0321S5 b^2 BIAPX NPN 1 GHz wideband transistor BFY90 N AMER PHILIPS/DISCRETE DESCRIPTION b^E J> PINNING NPN transistor in a TO-72 metal envelope, with insulated electrodes and a shield lead connected to the


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    PDF D0321S5 BFY90 bb53T31 MBA397 MEA363 BFY90 PHILIPS BFY90

    vk200 philips

    Abstract: BFY90 PHILIPS BFY90 VK200 Philips BFy90
    Text: Philips Semiconductors b b s a ia i D0321S5 b^E M AP V Product specification NPN 1 GHz wideband transistor BFY90 N DESCRIPTION AMER P H IL IP S /D IS C R E T E bTE PINNING NPN transistor in a TO-72 metal envelope, with insulated electrodes and a shield lead connected to the


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    PDF D0321S5 BFY90 andS15q UEA397 vk200 philips BFY90 PHILIPS BFY90 VK200 Philips BFy90

    Untitled

    Abstract: No abstract text available
    Text: bbSBTBl 003EQA7 Ell Philips Semiconductors Product specification APX BFT24 NPN 2 GHz w ideband transistor N ANER PHILIPS/DISCRETE DESCRIPTION bTE D PINNING NPN transistor in a plastic SOT37 envelope. It is primarily Intended for use in RF low power amplifiers, such as in


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    PDF 003EQA7 BFT24

    X3A-BFQ195

    Abstract: BFG195 BFG197 BFG198
    Text: Philips Semiconductors |H bb SB T B l NPN 8 GHz wideband transistor crystal D0322Dfl 757 APY Product specification X3A-BFQ195 N AMER PHILIPS/DISCRETE LTE ]> MECHANICAL DATA DESCRIPTION Crystal NPN crystal used in BFG195 SOT103 , BFG197 (SOT143) and BFG198 (SOT223). Crystals are supplied


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    PDF bbS3T31 00322DÃ X3A-BFQ195 BFG195 BFG197 OT143) BFG198 OT223) X3A-BFQ195 URV-3-5-52/733 BFG195 BFG197 BFG198

    TRANSISTOR D 5702

    Abstract: OA95 Transistor MJE 5331 l3 sot323 transistor BF 502 BFT93 BFT93W FC 0137 transistor 1661 equivalent 206 transistor specification sheet
    Text: m □ 0 3 2 2 3 ‘ì 3 2 0 H I A P X N A PIER P H I L I P S / D I S C R E T E bTE D Philips Semiconductors Product specification PNP 4 GHz wideband transistor BFT93W FEA TU R E S D ES C R IPTIO N • High power gain Silicon PNP transistor in a plastic, S O T 323 S-mini package. The


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    PDF BFT93W OT323 BFT93W BFT93. MBCS70 OT323. TRANSISTOR D 5702 OA95 Transistor MJE 5331 l3 sot323 transistor BF 502 BFT93 FC 0137 transistor 1661 equivalent 206 transistor specification sheet

    cb pj 47 diode

    Abstract: No abstract text available
    Text: N AUER PHILIPS/DISCRETE b^E J> bbS3T31 DD3227fl 070 H A P X Product specification Philips Semiconductors NPN silicon planar epitaxial microwave power transistor _ LFE15600X FEATURES QUICK REFERENCE DATA • Diffused emitter ballasting resistors


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    PDF bbS3T31 DD3227fl LFE15600X cb pj 47 diode

    BT 816 transistor

    Abstract: PA 1515 transistor 9921 transistor
    Text: Philips Semiconductors bb£ 3 R 31 Q Q 35 Q b b SR? ^ B A P X _ Product specification NPN 9 GHz wideband transistor BFS540 N AMER PHILIPS/DISCRETE FEATURES PINNING PIN CONFIGURATION PIN • High power gain DESCRIPTION _ EL Code: N4 • Low noise figure


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    PDF BFS540 OT323 OT323 OT323. BT 816 transistor PA 1515 transistor 9921 transistor

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors bb 5 3 =l31 0 0 3 3 1 8 1 7 8 4 • APX —JProductsgecjflc^ NPN 1 GHz general purpose switching transistor £ MPSH10 N AMER PHILIPS/DISCRETE FEATURES b'lE D PINNING PIN • Low cost • High power gain. DESCRIPTION DESCRIPTION 1 collector


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    PDF MPSH10 MPSH81. bbS3T31 D0321fl4

    Untitled

    Abstract: No abstract text available
    Text: KA7577 ELECTRO NICS I ndus t r i a] HIGH-PERFORMANCE PWM CONTROLLERS 16 DIP KA7577 is fixed frequency PWM controller and specially designed for SMPS to get regulated DC voltage from AC power supply. This integrated circuit has so fast rise and fall output pulse that it can directly drive power transistor


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    PDF KA7577 KA7577 Prot05 16-OIP-300A 16-DIP-300B D32fll2 20-SOP-300 20-SOP-375

    Harris CA3046

    Abstract: CA3046 7h0 ITT ICAN-5296
    Text: S E MI CON] SECTOR 4DE D 4302271 J i HARRIS 003220b I HAS CA3045 CA3046 General Purpose N -P-N Transistor Arrays August 1991 fea tu res Description • Two Matched Tran sisto rs: V b ë Matched ±5mV; Input Offset Current 2pA Max at lc = 1mA The CA304S and CA3046 each consist of fivo general


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    PDF 003220b CA3045 CA3046 CA304S CA3046 Harris CA3046 7h0 ITT ICAN-5296

    Untitled

    Abstract: No abstract text available
    Text: PWR-DRV2 Dual Universal Driver 400 V - 250 mA per channel POWER INTEGRATIONS, INC. Product Highlights Drives AC or DC relays and solenoids W ill operate from a rectified A C or D C pow er source 200, 300, and 400 V versions D rives up to 27 W loads from rectified 120 V A C input


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    PDF 20-Pin PO-006A-121289

    PROXIMITY inductive ic

    Abstract: metal detectors IC OM2860 OM3105N OM3105P OM3115N OM3115P
    Text: N AUER P H IL IP S / DI SC R ET E b^E D m bb53T31 D03EB01 BAPX Preliminary specification Philips Semiconductors Hybrid integrated circuits for inductive proximity detectors_ OM31Q5P FEATURES DESCRIPTION • Extra small dimensions 3 x 20 mm max.


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    PDF bbS3T31 OM31Q5P PROXIMITY inductive ic metal detectors IC OM2860 OM3105N OM3105P OM3115N OM3115P

    PROXIMITY inductive ic

    Abstract: metal detectors IC OM2860 OM2870
    Text: N AMER PHILIPS/DISCRETE Philips Semiconductors Data sheet status Product Specification date of issue August 1990 FEATURES • Extra small dimensions. • Wide range of supply voltage. • High output current. • Well proven oscillator stage using discrete transistors.


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    PDF OM2860/OM2870 OM2860 OM2870 PROXIMITY inductive ic metal detectors IC

    Untitled

    Abstract: No abstract text available
    Text: KA7551 ELECTRONICS Industrial DUAL PWM CONTROLLER The KA7551 is a dual PWM control circuit designed for power supply con­ trol. This PWM controller includes 2.5V regulator block, two error amplifier blo­ cks, adjustable oscillator block, undervoltage lockout block and common


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    PDF KA7551 KA7551 500KHz 10KHz 0D32774 DD3277S

    Untitled

    Abstract: No abstract text available
    Text: • b b S a ^ l 003273T T3S « A P X | I I OM386B OM387B N AF1ER PHILIPS/DISCRETE b'JE D _ y V HYBRID INTEGRATED CIRCUITS FOR INDUCTIVE PROXIMITY DETECTORS Hybrid integrated circuits intended for inductive proximity detectors in tubular construction,


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    PDF 003273T OM386B OM387B OM386B OM387B

    diagram ta 306-20

    Abstract: 4640A d023 transistor 34330 D019 D020 D021 D047 S-4640A transistor d032
    Text: S-4640A 64-bit THERMAL HEAD DRIVER The S-4640A is a CM OS thermal print head driver with a 64-bit shift register and a latch. The 100 ¡j.m driver output pad pitch allows for high density mounting up to 200 dpi or 8 dots/mm. Features Low current consumption : 0.5 mA typ.


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    PDF 64-bit S-4640A S-4640A S-4640A_ diagram ta 306-20 4640A d023 transistor 34330 D019 D020 D021 D047 transistor d032

    Untitled

    Abstract: No abstract text available
    Text: Contents Features. 1 Block Diagram. 1 Terminal


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    PDF 64-bit S-4621A prin2005 DO-18

    SHC76

    Abstract: ADC71 649T ADC76 PCM75 SHC76BM SHC76KM ADC71KG 320E7
    Text: For Immediate Assistance, Contact Your Local Salesperson BURR-BROW N! SHC76 1 E SAMPLE/HOLD AMPLIFIER FEATURES DESCRIPTION • FAST 6ns max ACQUISITION TIME (14-bit) The SHC76 is a fast, high-accuracy hybrid sample/ hold circuit suitable for use in high-resolution data


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    PDF SHC76 14-bit) 400ps 300mW ADC76, PCM75, ADC71 SHC76 ADC71 649T ADC76 PCM75 SHC76BM SHC76KM ADC71KG 320E7

    SHC76

    Abstract: adc76 ADC71
    Text: For Immediate Assistance, Contact Your Local Salesperson B U R R - B R O W N 'i E SHC76 1 SAMPLE/HOLD AMPLIFIER FEATURES DESCRIPTION • FAST 6ns max ACQUISITION TIME (14-bit) The SHC76 is a fast, high-accuracy hybrid sample/ hold circuit suitable for use in high-resolution data


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    PDF SHC76 14-bit) SHC76 400ps 300mW ADC76, PCM75, ADC71 adc76 ADC71