18f24k22
Abstract: PIC18f45k22 example C18 codes pic18F26K22 example C codes pic18F44K22 PIC18F45K22 PIC18f46k22 example C18 codes i2c pin diagram of PIC18f45k22 pin diagram of PIC18LF45k22 embedded microcontroller PIC18FXXK22 PIC18 example C18 codes spi
Text: PIC18 L F2X/4XK22 Data Sheet 28/40/44-Pin, Low-Power, High-Performance Microcontrollers with nanoWatt XLP Technology 2010 Microchip Technology Inc. Preliminary DS41412B Note the following details of the code protection feature on Microchip devices: •
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PIC18
F2X/4XK22
28/40/44-Pin,
DS41412B
DS41412B-page
18f24k22
PIC18f45k22 example C18 codes
pic18F26K22 example C codes
pic18F44K22
PIC18F45K22
PIC18f46k22 example C18 codes i2c
pin diagram of PIC18f45k22
pin diagram of PIC18LF45k22 embedded microcontroller
PIC18FXXK22
PIC18 example C18 codes spi
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ADM1069
Abstract: ADM1069AST ADM1069AST-REEL AN-721 AN721
Text: Super Sequencer with Margining Control ADM1069 FEATURES FUNCTIONAL BLOCK DIAGRAM REFIN REFOUT REFGND ADM1069 SDA SCL A1 A0 SMBus INTERFACE VREF 12-BIT SAR ADC MUX EEPROM CLOSED-LOOP MARGINING SYSTEM VX1 VX2 VX3 VX4 DUALFUNCTION INPUTS CONFIGURABLE OUTPUT DRIVERS
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ADM1069
12-BIT
32-Lead
40-Lead
ADM1069
ADM1069AST
ADM1069AST-REEL
AN-721
AN721
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pin diagram of PIC18f45k22
Abstract: PIC18F45K22 18F25K22 pic18F26K22 example C codes PIC18F26k22 PIC18F k22 PIC18LF26K22 PIC18F46K22 DS41412D PIC18FXXK22
Text: PIC18 L F2X/4XK22 Data Sheet 28/40/44-Pin, Low-Power, High-Performance Microcontrollers with nanoWatt XLP Technology 2010 Microchip Technology Inc. Preliminary DS41412D Note the following details of the code protection feature on Microchip devices: •
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PIC18
F2X/4XK22
28/40/44-Pin,
DS41412D
DS41412D-page
pin diagram of PIC18f45k22
PIC18F45K22
18F25K22
pic18F26K22 example C codes
PIC18F26k22
PIC18F k22
PIC18LF26K22
PIC18F46K22
DS41412D
PIC18FXXK22
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ADG836L
Abstract: ADG836LYRM ADG836LYRM-REEL ADG836LYRM-REEL7 MO-187BA RM-10
Text: 0.5 Ω CMOS 1.65 V to 3.6 V Dual SPDT/2:1 MUX ADG836L FEATURES FUNCTIONAL BLOCK DIAGRAM 0.5 Ω typical on resistance 0.8 Ω maximum on resistance at 125°C 1.65 V to 3.6 V operation Automotive temperature range: –40°C to +125°C Guaranteed leakage specifications up to 125°C
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ADG836L
RM-10)
ADG836LYRM
ADG836LYRM-REEL
ADG836LYRM-REEL7
RM-10
ADG836L
ADG836LYRM
ADG836LYRM-REEL
ADG836LYRM-REEL7
MO-187BA
RM-10
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murata 10.7MA ceramic filter
Abstract: ca3089f SFG 10.7MA Harris CA3089 CA3089 CA3089E Waller 4SN3FIC 143D2271 CA3089H Murata SFG
Text: HARRIS SEMICON» SECTOR LIE D • 143D2271 D047Gb7 IbD B H A S CA3089 HARRIS S E M I C O N D U C T O R FM IF System March 1993 Features Description • For FM IF Amplifier Applications In High-Fidelity, Automotive, and Communications Receivers Harris CA3089 is a monolithic integrated circuit that
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143D2271
D047Gb7
CA3089
CA3089
220pF
EX22741
98MHz,
400Hz,
75kHz:
murata 10.7MA ceramic filter
ca3089f
SFG 10.7MA
Harris CA3089
CA3089E
Waller 4SN3FIC
CA3089H
Murata SFG
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COLOR TV SERVICE CODE
Abstract: TDA4570N "NTSC Decoder" signetics PLL TDA4555 TDA4570 TWO COLOR DETECTOR RY 716 V143 sandcastle
Text: 1ÖE D NAPC/ SIfiNETICS bb53^EM D0470Ö3 b • SIC3 TDA4570 ". T-77-o7-o3| Signetics NTSC Color Difference Decoder Product Specification Linear Products DESCRIPTION The TDA4570 is a monolithic, integrated NTSC decoder for NTSC television re ceivers, which is decoder for NTSC tele
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TDA4570
TDA4570
TDA4555.
58MHz
43MHz
UM77S2S
COLOR TV SERVICE CODE
TDA4570N
"NTSC Decoder"
signetics PLL
TDA4555
TWO COLOR DETECTOR
RY 716
V143
sandcastle
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TCK-1000
Abstract: D038 toshiba M7
Text: TO SH IBA THM Y6480F1 BEG-80 TEN TA TIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 8,388, 6 O8-W O RD B Y 64-BIT SYN CH R O N O U S DRAM M ODULE D ESCRIPTIO N The THMY6480F1BEG is a 8,388,608-word by 64-bit synchronous dynamic RAM module consisting of eight TC59S6408BFT DRAMs and an unbuffer on a printed circuit board.
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Y6480F1
BEG-80
64-BIT
THMY6480F1BEG
608-word
TC59S6408BFT
64-bit
THMY6480F1
TCK-1000
D038
toshiba M7
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KM44V16100AK
Abstract: TIL 143 KM44V16000AK
Text: KMM372V1600AK/AS KMM372V1680AK/AS DRAM MODULE KMM372V1600AK/AS & KMM372V1680AK/AS Fast Page Mode 16Mx72 DRAM DIMM with ECC based on 16Mx4, 4K & 8K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM372V160 8 0A is a 16M bit x 72 • Part Identification
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KMM372V1600A
KMM372V1680A
KMM372V1600AK/AS
KMM372V1680AK/AS
16Mx72
16Mx4,
KMM372V160
16Mx4bit
400mil
KM44V16100AK
TIL 143
KM44V16000AK
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tfk 136
Abstract: No abstract text available
Text: TOSHIBA THMY6416C1BEG-80L TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY6416C1BEG is a 16,777,216-word by 64-bit synchronous dynamic RAM module consisting of 16 TC59S6408BFT DRAMs and an unbuffer on a printed circuit board.
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THMY6416C1BEG-80L
216-WORD
64-BIT
THMY6416C1BEG
TC59S6408BFT
64-bit
THMY6416C1BEG)
tfk 136
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Untitled
Abstract: No abstract text available
Text: TOSHIBA THMY6480D1BEG-80L TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 8,388,6O8-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY6480D1BEG is a 8,388,608-word by 64-bit synchronous dynamic RAM module consisting of eight TC59S6408BFTL DRAMs and an unbuffer on a printed circuit board.
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THMY6480D1BEG-80L
THMY6480D1BEG
608-word
64-bit
TC59S6408BFTL
64-bit
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D018
Abstract: D019 D032
Text: TOSHIBA THMY51E10C70,75,80 TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT TENTATIVE 67,108,864-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY51E10C is a 67,108,864-word by 72-bit synchronous dynamic RAM module consisting of 18 TC59SM804CFT DRAMs and PLL/Registers on a printed circuit board.
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THMY51E10C70
THMY51E10C70,
THMY51E10C75,
THMY51E10C80
864-word
72-bit
TC59SM804CFT
D018
D019
D032
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Intel 1103 DRAM
Abstract: D03B intel 1103 ram D018 D019 D032
Text: TOSHIBA THMY6432G1EG-80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 33,554,432-WORD BY 64-BIT SYNCHRONOUS D RAM MODULE DESCRIPTION The THMY6416E1BEG is a 33,554,432-word by 64-bit synchronous dynamic RAM module consisting of 16 TC59SM708FT DRAMs and an unbuffer on a printed circuit board.
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Y6432G1EG-80
432-WORD
64-BIT
THMY6416E1BEG
TC59SM708FT
64-bit
Intel 1103 DRAM
D03B
intel 1103 ram
D018
D019
D032
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0-Cl15
Abstract: 208H D120
Text: XF677240 —x x x x SERIES INDUCTORS * S u r fa c e mount in d u c to r s d e s ig n e d fo r h ig h e r s p e e d s w itc h m o d e a p p lic a t io n s re q u irin g lower inductance and high corrent. * Dual c o n d u c to rs allow f o r lew i n d u c t a n c e
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XF677240
047uH
480uH
XF677240-xxxx
500KHz
MIL-STD-202G,
155-C.
E151556
0-Cl15
208H
D120
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D018
Abstract: D019 D032 D051 THMY51E10B70
Text: T O S H IB A THMY51E10B70,75,80 TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT TENTATIVE 67,108,864-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY51E10B is a 67,108,864-word by 72-bit synchronous dynamic RAM module consisting of 18 TC59SM804BFT DRAMs and PLL/Registers on a printed circuit board.
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THMY51E10B70
864-WORD
72-BIT
THMY51E10B
TC59SM804BFT
72-bit
aY51E10B70
D018
D019
D032
D051
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Untitled
Abstract: No abstract text available
Text: TOSHIBA THMY7280F1 BEG-80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 8,388,608-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The T H M Y 7 2 8 0 F 1 B E G is a 8,3 8 8 ,6 0 8 -w o rd by 7 2 -b it synchronous dynam ic RAM module consisting of
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THMY7280F1
BEG-80
608-WORD
72-BIT
ililo11
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Untitled
Abstract: No abstract text available
Text: TOSHIBA THMY7280D1EG-80H TENTATIVE T O SH IB A H YBRID D IG ITA L IN TEG R A T ED CIRCU IT 8,388,608-W ORD BY 72-BIT SYNCHRONOUS DRAM M O DULE DESCRIPTION The THMY7280D1EG is a 8,388,608-word by 72-bit synchronous dynamic RAM module consisting of nine TC59S6408FT DRAMs and an unbuffer on a printed circuit board.
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THMY7280D1EG-80H
72-BIT
THMY7280D1EG
608-word
TC59S6408FT
72-bit
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TH MY7216E1 BEG-80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY7216E1BEG is a 16,777,216-word by 72-bit synchronous dynamic RAM module consisting of 18 TC59S6408BFT DRAMs and an unbuffer on a printed circuit board.
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MY7216E1
BEG-80
216-WORD
72-BIT
THMY7216E1BEG
TC59S6408BFT
72-bit
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la 7849
Abstract: No abstract text available
Text: ANALOG ► DEVICES Serial Input, 14-Bit/I 6-Bit DAC AD7849 FEATURES 14 -B it/I 6-Bit Multiplying DAC Guaranteed Monotonicity Output Control on Power-Up and Power-Down Internal or External Control Versatile Serial Interface DAC Clears to 0 V in Both Unipolar and Bipolar Output
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14-Bit/I
AD7849
AD7849
14-bit/16-bit
la 7849
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TMP96CM40 CMOS 16-bit MICROCONTROLLERS TMP96CM40F 1. OUTLINE AND DEVICE CHARACTERISTICS TM P96CM 40P is h igh-speed advanced 16-bit m icrocontrollers developed for controlling m edium to large-scale equipm ent. The TMP96C141AF does not have a ROM, the TMP96CM40F has a built-in ROM of 32K-byte, and the TMP96PM40 has a
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TMP96CM40
16-bit
TMP96CM40F
P96CM
TMP96C141AF
TMP96CM40F
32K-byte,
TMP96PM40
32K-byte.
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OQ45
Abstract: D018 D019 D032
Text: TOSHIBA THMY7216D0CEG-75,-80 TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT TENTATIVE 16,777,216-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY7216D0CEG is a 16,777,216-word by 72-bit synchronous dynamic RAM module consisting of 18 TC59S6404CFT DRAMs and PLL/Registers on a printed circuit board.
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Y7216D0CEG-75
216-WORD
72-BIT
THMY7216D0CEG
TC59S6404CFT
168-pin
PC133
PC100
OQ45
D018
D019
D032
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Untitled
Abstract: No abstract text available
Text: TOSHIBA THMY7216F0EG-75 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY7216F0EG is a 16,777,216-word by 72 bit synchronous dynamic RAM module consisting of nine TC59SM708FT DRAMs and PLL/Registers on a. printed circuit board.
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THMY7216F0EG-75
THMY7216F0EG
216-word
TC59SM708FT
72-BIT
72-bit
THMY7216F0EG)
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ra2b
Abstract: No abstract text available
Text: TOSHIBA THMY7264E0LEG-75,-80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 67,108,864-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY7264E0LEG is a 67,108,864-word by 72-bit synchronous dynamic RAM module consisting of 36 TC59SM704FT DRAMs and PLL/Registers on a printed circuit board.
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864-WORD
72-BIT
THMY7264E0LEG-75
THMY7264E0LEG
TC59SM704FT
72-bit
THMY7264E0LEG)
ra2b
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Untitled
Abstract: No abstract text available
Text: TO SHIBA THMY728030BEG-80 TENTATIVE TO SHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 8,388,608-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY728030BEG is a 8,388,608-word by 72-bit synchronous dynamic RAM module consisting of nine TC59S6408BFT DRAMs and PLL/Registers on a printed circuit board.
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THMY728030BEG-80
608-WORD
72-BIT
THMY728030BEG
TC59S6408BFT
72-bit
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Untitled
Abstract: No abstract text available
Text: cP IITSU November 1997 Revision 1.1 data sheet S0B8UL6484- 67/84/100/125 T-S 64MByte (8M x 64) CMOS Synchronous DRAM Module General Description The SOB8UL6484-(67/84/100/125)T-S is a high performance, 64-megabyte synchronous, dynamic RAM module organized as
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S0B8UL6484-
64MByte
SOB8UL6484-
64-megabyte
144-pin,
B81164842A-
84Mhz
100Mhz
125Mhz
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