TRANSISTOR D 587 Search Results

TRANSISTOR D 587 Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
CA3082	Rochester Electronics LLC	CA3082 - Small Signal Bipolar Transistor
CA3081F	Rochester Electronics LLC	CA3081 - Small Signal Bipolar Transistor
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold

TRANSISTOR D 587 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
BST72A Abstract: No abstract text available Text: BST72A JV _ N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in TO-92 variant envelope and designed for use in telephone ringer circuits and for application with relay, high-speed and line-transformer drivers.	OCR Scan	BST72A	PDF
BST110 Abstract: P-channel max 083 Text: 711002b GObVTMB 1Ô3 IPH IN BST110 P-CHANNEL ENCHANCEMENT MODE VERTICAL D-MOS TRANSISTOR P-channel vertical D-MOS transistor in TO-92 variant envelope and intended fo r use in relay, high-speed and line-transformer drivers. Features • • • • Very low RpSon	OCR Scan	711002b BST110 200mA BST110 P-channel max 083	PDF
GSO 69 Abstract: No abstract text available Text: bbSB^ai 0023^74 6RD * A P X N AMER PHILIPS/ DISCRE TE b?E ]> BST110 yv P-CHANNEL ENCHANCEMENT MODE VERTICAL D-MOS TRANSISTOR P-channel vertical D-MOS transistor in TO-92 variant envelope and intended fo r use in relay, high-speed and line-transformer drivers.	OCR Scan	BST110 DS3c17b GSO 69	PDF
727 Transistor power values Abstract: BST110 transistor wz Text: • bbSB^ai OGSa'iTM fi'îO « A P X N AMER PHILIPS/DISCRETE BST110 b?E T> P-CHANNEL ENCHANCEMENT MODE VERTICAL D-MOS TRANSISTOR P-channel vertical D-MOS transistor in TO-92 variant envelope and intended fo r use in relay, high-speed and line-transformer drivers.	OCR Scan	BST110 200mA TZ22045 727 Transistor power values BST110 transistor wz	PDF
tip122 tip127 audio amp schematic Abstract: mje521 equivalent BJT small signal low power BD139 MJ15003 300 watts amplifier 2N3773 pinout transistor mj11032 equivalent MJ11028 transistor equivalent 2n3055 IC 2N3773 audio amplifier diagram 2n222 TRANSISTOR use as audio amplifier Text: DL111/D Rev. 8, July-2001 Bipolar Power Transistor Data Bipolar Power Transistor Data DL111/D Rev. 8, Jul–2001  SCILLC, 2001 Previous Edition  1995 “All Rights Reserved’’ Grafoil is a registered Trademark of Union Carbide. Kon–Dux and Rubber–Duc are trademarks of Aavid Thermal Technologies, Inc.	Original	DL111/D July-2001 r14525 tip122 tip127 audio amp schematic mje521 equivalent BJT small signal low power BD139 MJ15003 300 watts amplifier 2N3773 pinout transistor mj11032 equivalent MJ11028 transistor equivalent 2n3055 IC 2N3773 audio amplifier diagram 2n222 TRANSISTOR use as audio amplifier	PDF
2N2222A 338 Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931 Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK	OCR Scan	2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931	PDF
BUK657-500B Abstract: T0220AB transistor D 587 Text: N AMER PHILIPS/DISCRETE hTE D • ^53*131 00308^0 ESI « A P X Philips Semiconductors Product Specification PowerMOS transistor Fast recovery diode FET_ GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a	OCR Scan	BUK657-500B T0220AB transistor D 587	PDF
Untitled Abstract: No abstract text available Text: bRE D N AflER P H I L I P S / D I S C R E T E m bb53R31 QQ30fl^0 P h ilip s S e m ic o n d u c to rs P ro d u c t S p e c ific a tio n Pow erM O S transistor Fast recovery diode F E T GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a	OCR Scan	bb53R31 QQ30fl O220AB BUK657-500B bbS3T31 Q030flT4	PDF
BFT25 Abstract: bft25 transistor Text: N AMER P H I L I P S / D I S C R E T E ^53^31 o o ia is i b 'l BSE D J BFT25 T - 3 I -\|7 N-P-N H.F. WIDEBAND TRANSISTOR N-P-N transistor in a plastic SOT-23 envelope, primarily intended for use in u.h.f. low power amplifiers in thick and thin-film circuits, such as in pocket phones, paging systems, etc. The transistor features	OCR Scan	BFT25 OT-23 7ZS76S4 Z67656 BFT25 bft25 transistor	PDF
613 GB 123 CT Abstract: No abstract text available Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR uPA812T HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC4227 SMALL MINI MOLD The /xPA812T has built-in 2 low-voltage transistors which are designed to PACKAGE D R A W IN G S	OCR Scan	uPA812T 2SC4227) /xPA812T 613 GB 123 CT	PDF
Untitled Abstract: No abstract text available Text: S AM SU N G SEMICONDUCTOR INC MPS3706 IME D \| 7^4142 00G7317 1 \| NPN EPITAXIAL SILICON TRANSISTOR T -2 9 -2 1 GENERAL PURPOSE TRANSISTOR • Collector-Em ltter Voltage: Veto= 20V • C ollector Dissipation:'Pc max =625mW TO-92 ABSOLUTE MAXIMUM R ATING S (Ta=25°C)	OCR Scan	00G7317 MPS3706 625mW 2N4400	PDF
CEM8435A Abstract: No abstract text available Text: CEM8435A March 1998 P-Channel Enhancement Mode Field Effect Transistor FEATURES 5 -30V , -7.9A , RDS ON =24mΩ @VGS=-10V. RDS(ON)=40m Ω @VGS=-4.5V. D D D D 8 7 6 5 Super high dense cell design for extremely low RDS(ON). High power and current handing capability.	Original	CEM8435A CEM8435A	PDF
BUY89 Abstract: No abstract text available Text: N AflER PHILIPS/DISCRETE SSE D bt.s3T3i o o m a s t BUY89 J V T*-3 3 -1 3 SILICON DIFFUSED POWER TRANSISTOR High-voltage, high-speed switching npn transistor in a TO-3 envelope especially intended for use in A C motor control systems from three-phase mains.	OCR Scan	BUY89 bfaS3131 BUY89	PDF
BFQ32M Abstract: transistor D 587 BFQ63 GHz PNP transistor Text: Product specification Philips Sem iconductors PNP 4 GHz wideband transistor PHILIPS INTERNATIONAL ' / 5 bE D • 711062b BFQ32M □□•4 S 4 3 Q 3 3 T ■ P H IN PINNING DESCRIPTION PNP transistor In a TO-72 metal envelope with insulated electrodes and a shield lead connected to the	OCR Scan	BFQ32M 711062b 0DHS43Q BFQ63. IS22I 7110flEb 00M5M35 MBB347 BFQ32M transistor D 587 BFQ63 GHz PNP transistor	PDF

BUK475-400B Abstract: LD25C BUK475 3909 Text: Philips Com ponents Data sheet status Prelim inary specification date of issue March 1991 PHILIPS BUK 475-400B PowerMOS transistor INTERNATIONAL SbE D i- 1 GENERAL DESCRIPTION N-channel enhancem ent m ode	OCR Scan	OT186A 475-400B 711002b 0d44b4" BUK475-400B LD25C BUK475 3909	PDF
MOTOROLA POWER TRANSISTOR lc 945 Abstract: zener ap 474 940 629 MOTOROLA 113 Text: MOTOROLA O rder this docum ent by M RF158/D SEMICONDUCTOR TECHNICAL DATA The RF TMOS Line Power Field Effect Transistor MRF158 N-Channel Enhancement Mode D esigned fo r w id e b a n d la rg e -s ig n a l am p lifie r and o scilla to r ap plicatio ns to 500 MHz.	OCR Scan	RF158/D MOTOROLA POWER TRANSISTOR lc 945 zener ap 474 940 629 MOTOROLA 113	PDF
940 629 MOTOROLA 113 Abstract: Nippon capacitors Text: MOTOROLA Order this document by MRF158/D SEMICONDUCTOR TECHNICAL DATA Power Field Effect Transistor MRF158 N–Channel Enhancement Mode Designed for wideband large–signal amplifier and oscillator applications to 500 MHz. • Guaranteed 28 Volt, 500 MHz Performance	Original	MRF158/D MRF158 940 629 MOTOROLA 113 Nippon capacitors	PDF
MTP1N100E Abstract: AN569 Text: MOTOROLA Order this document by MTP1N100E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. Power Field Effect Transistor Designer's MTP1N100E Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 1.0 AMPERES 1000 VOLTS	Original	MTP1N100E/D MTP1N100E MTP1N100E/D* MTP1N100E AN569	PDF
transistor NEC D 587 Abstract: LS 1691 BM UPA802T l 9143 NEC D 587 Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR uPA802T HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIALTRANSISTOR WITH BUILT-IN 2 ELEMENTS M INI MOLD T he/xP A 802T has b u ilt-in 2 1o w -v o It age tra n s is to rs w h ic h are d e sig ne d PACKAGE DRAWINGS	OCR Scan	uPA802T 2SC4227) transistor NEC D 587 LS 1691 BM l 9143 NEC D 587	PDF
Untitled Abstract: No abstract text available Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR ¿¿PA802T HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIALTRANSISTOR WITH BUILT-IN 2 ELEMENTS M INI MOLD The ¿¡PA802T has b u ilt-in 2 lo w -v o lta g e tra n s is to rs w h ic h are d e sig n e d PACKAGE DRAWINGS	OCR Scan	PA802T PA802T 2SC4227) /IPA802T	PDF
logos 4012B Abstract: 1LB553 Rauland ETS-003 Silec Semiconductors MCP 7833 4057A transistor sr52 74c912 1TK552 74S485 Text: L p i > « , * S E m Ic O N VOLUM E 3 INTERNATIONAL INTEGRATED CIRCUITS INDEX 5th EDITION 1985 Revised June 1985 COMPILED AND PUBLISHED BY S E M IC O N IN D E X E S L IM IT E D THE SEMICON INDEX SERIES CONSISTS OF VOLUME 1 TRANSISTOR INDEX VOLUME 2 DIODE & SCR INDEX	OCR Scan	TDA1510 TDA1510A logos 4012B 1LB553 Rauland ETS-003 Silec Semiconductors MCP 7833 4057A transistor sr52 74c912 1TK552 74S485	PDF
940 629 MOTOROLA 220 Abstract: MOTOROLA POWER 726 MOS FET TRANSISTOR MRF158 VK200 20WATTS Text: MOTOROLA Order this document by MRF158/D SEMICONDUCTOR TECHNICAL DATA The RF TMOS Line Power Field Effect Transistor MRF158 N–Channel Enhancement Mode Designed for wideband large–signal amplifier and oscillator applications to 500 MHz. • Guaranteed 28 Volt, 500 MHz Performance	Original	MRF158/D MRF158 940 629 MOTOROLA 220 MOTOROLA POWER 726 MOS FET TRANSISTOR MRF158 VK200 20WATTS	PDF
Untitled Abstract: No abstract text available Text: 30E J> • 715^237 003DQbS S C S -T H O M S O N . s 1 ■ ' " P 'S t t - l ' » « s - thohson ïlL U ra M O Ê S _ SG SP577 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE SGSP577 Voss 200 V R D S o n 0.17 n ' d 20 A • HIGH SPEED SWITCHING APPLICATIONS	OCR Scan	003DQbS SP577 SGSP577 SC-0008/1	PDF
BFR92P Abstract: No abstract text available Text: 3 S E D • ö5 3b3 EG 0G17GQ2 T W ËSI P NPN Silicon RF Transistor SIEMENS/ SPCLi SEMICONDS BFR92P _ 7_ • For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents from 0.5 to 20 mA. C £ CECC-type available: CECC 50002/254.	OCR Scan	0G17GQ2 BFR92P OT-23 BFR92P	PDF

TRANSISTOR D 587 Search Results

TRANSISTOR D 587 Result Highlights (5)

TRANSISTOR D 587 Datasheets Context Search

BST72A

BST110

GSO 69

727 Transistor power values

tip122 tip127 audio amp schematic

2N2222A 338

BUK657-500B

Untitled

BFT25

613 GB 123 CT

Untitled

CEM8435A

BUY89

BFQ32M

BUK475-400B

MOTOROLA POWER TRANSISTOR lc 945

940 629 MOTOROLA 113

MTP1N100E

transistor NEC D 587

Untitled

logos 4012B

940 629 MOTOROLA 220

Untitled

BFR92P