TRANSISTOR D 288 Search Results

TRANSISTOR D 288 Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTOR D 288 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
m8 smd transistor Abstract: "MARKING CODE M8" TRANSISTOR D 471 smd transistor m8 TRANSISTOR SMD MARKING CODE oc MAM356 smd transistor marking m8 transistor smd M8 BSN20W TRANSISTOR SMD CODE PACKAGE SOT323 Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D102 BSN20W N-channel enhancement mode vertical D-MOS transistor Product specification Supersedes data of 1997 Jun 20 2000 Mar 10 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor	Original	M3D102 BSN20W OT323 603502/02/pp8 m8 smd transistor "MARKING CODE M8" TRANSISTOR D 471 smd transistor m8 TRANSISTOR SMD MARKING CODE oc MAM356 smd transistor marking m8 transistor smd M8 BSN20W TRANSISTOR SMD CODE PACKAGE SOT323	PDF
tip122 tip127 audio amp schematic Abstract: mje521 equivalent BJT small signal low power BD139 MJ15003 300 watts amplifier 2N3773 pinout transistor mj11032 equivalent MJ11028 transistor equivalent 2n3055 IC 2N3773 audio amplifier diagram 2n222 TRANSISTOR use as audio amplifier Text: DL111/D Rev. 8, July-2001 Bipolar Power Transistor Data Bipolar Power Transistor Data DL111/D Rev. 8, Jul–2001  SCILLC, 2001 Previous Edition  1995 “All Rights Reserved’’ Grafoil is a registered Trademark of Union Carbide. Kon–Dux and Rubber–Duc are trademarks of Aavid Thermal Technologies, Inc.	Original	DL111/D July-2001 r14525 tip122 tip127 audio amp schematic mje521 equivalent BJT small signal low power BD139 MJ15003 300 watts amplifier 2N3773 pinout transistor mj11032 equivalent MJ11028 transistor equivalent 2n3055 IC 2N3773 audio amplifier diagram 2n222 TRANSISTOR use as audio amplifier	PDF
Untitled Abstract: No abstract text available Text: MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOSTM OptiMOSTMFDPower-Transistor,200V IPB117N20NFD DataSheet Rev.2.0 Final PowerManagement&Multimarket OptiMOSTMFDPower-Transistor,200V IPB117N20NFD 1Description D²PAK Features	Original	IPB117N20NFD IEC61249-2-21	PDF
PHD24N03LT Abstract: No abstract text available Text: PHD24N03LT N-channel enhancement mode field-effect transistor Rev. 02 — 27 July 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: PHD24N03LT in SOT428 D-PAK .	Original	PHD24N03LT PHD24N03LT OT428 OT428,	PDF
Untitled Abstract: No abstract text available Text: PHD24N03LT N-channel enhancement mode field-effect transistor Rev. 02 — 27 July 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: PHD24N03LT in SOT428 D-PAK .	Original	PHD24N03LT PHD24N03LT OT428 OT428,	PDF
Untitled Abstract: No abstract text available Text: PHD20N06T N-channel TrenchMOS transistor Rev. 01 — 22 February 2001 Product specification M3D300 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™1 technology. Product availability: PHD20N06T in SOT428 D-PAK .	Original	PHD20N06T M3D300 PHD20N06T OT428 MBK091	PDF
PHD83N03LT Abstract: PHD83 Text: PHD83N03LT N-channel enhancement mode field-effect transistor Rev. 01 — 16 July 2001 Product data M3D300 1. Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS 1 technology. Product availability: PHD83N03LT in a SOT428 D-PAK .	Original	PHD83N03LT M3D300 PHD83N03LT OT428 OT428, MBB076 MBK091 PHD83	PDF
transistor BR 471 A Abstract: PHD95N03LT 08216 Text: PHD95N03LT N-channel enhancement mode field-effect transistor Rev. 01 — 18 July 2001 Product data M3D300 1. Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS 1 technology. Product availability: PHD95N03LT in SOT428 D-PAK .	Original	PHD95N03LT M3D300 PHD95N03LT OT428 OT428, MBB076 MBK091 transistor BR 471 A 08216	PDF
Transistor A137 Abstract: No abstract text available Text: L _ _ ALL E GR O MICROSYSTEMS INC T3 T> • 0 S D M 3 3 Ö D 0 D 3 b 7 7 S I ALGR T-91-01 PROCESS DJC Process DJC PNP Small-Signal Transistor Designed for general-purpose switch and amplifier applications, the Process DJC PN P transistor oper	OCR Scan	00Q3b77 T-91-01 SGM33Ã 0003b7fl T-91-Ã Transistor A137	PDF
Untitled Abstract: No abstract text available Text: SILICON TRANSISTOR 2SC3545 UHF OSCILLATOR AND MIXER NPN SILICON EPITAXIAL TRANSISTOR M IN I MOLD PACKAGE D IM E N S IO N S D E S C R IP T IO N in m illim e te rs T h e 2 S C 3 5 4 5 is an N P N silicon e p ita x ia l transistor inte n d e d fo r use as U H F os cillator and m ix e r in a tu n e r o f a T V receiver.	OCR Scan	2SC3545 2SC3545 S22e-F	PDF
transistor b 1238 Abstract: BFG91A UBB328 7407 IC and Text: PhHip^emiconductor^^^ • bbS3T31 0031233 T1S ■ APX^Productspecification NPN 6 GHz wideband transistor — ^ BFG91A N AHER P H ILIP S /D IS C R E TE DESCRIPTION b*lE D PINNING NPN transistor in a 4-lead dual-emltter plastic SO T 103 envelope. PIN It is designed for application in	OCR Scan	bb53T31 BFG91A transistor b 1238 BFG91A UBB328 7407 IC and	PDF
2N2222A 338 Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931 Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK	OCR Scan	2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931	PDF
y51 h 120c Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711 Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK	OCR Scan	500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711	PDF
2SC5012-T1 Abstract: No abstract text available Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5012 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • S m a ll P acka ge • H igh G ain B a n d w id th P ro d u c t ft- = 9 G H z T Y P . •	OCR Scan	2SC5012 2SC5012-T1 2SC5012-T2 2SC5012-T1	PDF

k452 Abstract: BUK452-60A BUK452-60B T0220AB lo25 transistor k452 Text: N AMER PHILIPS/DISCRETE blE D • ^53^31 □□3GSTÜ Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies	OCR Scan	K452-60A/B T0220AB BUK452 -ID/100 k452 BUK452-60A BUK452-60B T0220AB lo25 transistor k452	PDF
transistor a13 Abstract: A13 transistor Text: ALL E GR O MICROSYSTEMS INC =13 D • 05GM33fl G 0 D 3 b 7 S 1 I ALGR T-91-01 PROCESS DID Process DID NPN Small-Signal Transistor Designed for general-purpose switch and amplifier applications, the Process DID NPN transistor oper ates at collector currents of up to 1A. This double	OCR Scan	0003b75 T-91-01 1000mA transistor a13 A13 transistor	PDF
8 pin ic lm 745 Abstract: No abstract text available Text: DISCRETE SEMICONDUCTORS BF588 PNP high-voltage transistor 1999 Apr 12 Product specification Supersedes data of 1996 Dec 09 Philips Sem iconductors PHILIPS PHILIPS Philips Semiconductors Product specification PNP high-voltage transistor BF588 FEATURES • Low fe e d b a ck capacitance.	OCR Scan	BF588 BF585 BF587. MBH792 115002/00/03/pp8 8 pin ic lm 745	PDF
BUK452-60A Abstract: BUK452-60B T0220AB Text: PHILIPS INTERNATIONAL L.5E D B 711DfiSb D0fc.4D5b 114 B I P H I N Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in	OCR Scan	BUK452-60A/B T0220AB BUK452 -ID/100 BUK452-60A BUK452-60B	PDF
Untitled Abstract: No abstract text available Text: Pjjijip^enijconductor^^^ • bbS3T31 0031233 T1S ■ APX^ProductspecificatiOT NPN 6 GHz wideband transistor ^ BFG91A N AHER PHILIPS/DISCRETE DESCRIPTION b*lE D PINNING NPN transistor in a 4-lead dual-emitter plastic SOT 103 envelope. PIN It is designed for application in	OCR Scan	bbS3T31 BFG91A	PDF
BUZ24 Abstract: No abstract text available Text: N AMER PHILIPS/DISCRETE ObE D PowerMOS transistor • bb53cl31 OOmSTfl 1 ■ - BUZ24 r-3 i-is July 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metal envelope. This device is intended for use in Switched Mode Power Supplies	OCR Scan	bb53c BUZ24 bbS3T31 Q014bD2 T-39-13 BUZ24_ 0D14b03 BUZ24	PDF
BUZ24 Abstract: IEC134 Text: ObE D N AUER PHILIPS/DISCRETE ^53131 00145TÖ BUZ24 PowerMOS transistor 1 T -S i-lS July 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metal envelope. This device is intended for use in Switched Mode Power Supplies	OCR Scan	00145T6 BUZ24 T-39-13 BUZ24 IEC134	PDF
Untitled Abstract: No abstract text available Text: N AMER PHILIPS/DISCRETE BSE D • bbSBTEl 00E0S05 =1 ■ BUK455-450B PowerMOS transistor QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,	OCR Scan	00E0S05 BUK455-450B T-37-J3 bbS3131 bS3131 002QSDT	PDF
613 GB 123 CT Abstract: No abstract text available Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR uPA812T HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC4227 SMALL MINI MOLD The /xPA812T has built-in 2 low-voltage transistors which are designed to PACKAGE D R A W IN G S	OCR Scan	uPA812T 2SC4227) /xPA812T 613 GB 123 CT	PDF
bfg91a Abstract: transistor kt 801 MBS330 transistor 446-1 1SS TRANSISTOR transistor kt 326 FP 801 transistor SOT103 transistor C 2290 Text: PhHip^emiconductor^^^ • bbS3T31 0031233 T1S ■ APX^Productspecification NPN 6 GHz wideband transistor — ^ BFG91A N AHER PHILIPS/DISCRETE DESCRIPTION b*lE D PINNING NPN transistor in a 4-lead dual-emltter plastic SOT 103 envelope. PIN It is designed for application in	OCR Scan	G031233 BFG91A bfg91a transistor kt 801 MBS330 transistor 446-1 1SS TRANSISTOR transistor kt 326 FP 801 transistor SOT103 transistor C 2290	PDF

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TRANSISTOR D 288 Search Results

TRANSISTOR D 288 Result Highlights (5)

TRANSISTOR D 288 Datasheets Context Search

m8 smd transistor

tip122 tip127 audio amp schematic

Untitled

PHD24N03LT

Untitled

Untitled

PHD83N03LT

transistor BR 471 A

Transistor A137

Untitled

transistor b 1238

2N2222A 338

y51 h 120c

2SC5012-T1

k452

transistor a13

8 pin ic lm 745

BUK452-60A

Untitled

BUZ24

BUZ24

Untitled

613 GB 123 CT

bfg91a