TRANSISTOR D 1979 Search Results

TRANSISTOR D 1979 Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
CA3082	Rochester Electronics LLC	CA3082 - Small Signal Bipolar Transistor
CA3081F	Rochester Electronics LLC	CA3081 - Small Signal Bipolar Transistor
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold

TRANSISTOR D 1979 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
BF939 Abstract: 60S2 N322 transistor BF939 n3220 Text: 1 BF939. N AUER PHILIPS/DISCRETE ObE D fab53131 001E354 T T - 5 i - 17 i SILICON PLANAR TRANSISTOR P-N-P transistor in a TO-92 envelope intended fo r application as a gain controlled pream plifier in v.h.f. tuners. Q U IC K REFERENCE D A T A -V c B O max.	OCR Scan	BF939. 001E354 BF939 60S2 N322 transistor BF939 n3220	PDF
Untitled Abstract: No abstract text available Text: it_ N AUER PHILIPS/DISCRETE QbE D BF939 bb53T31 0012324 T • . ~ — - —— ' T - 2J - I 7 SILICON PLANAR TRANSISTOR P-N-P transistor in a TO-92 envelope intended fo r application as a gain controlled preamplifier in v.h.f.	OCR Scan	BF939 bb53T31 bbS3131 001232b bbS3T31 7Z82204	PDF
BD132 Abstract: BD131 NPN POWER TRANSISTOR SOT-32 M 5229 IC GDM2770 GQM2771 IEC134 transistor af 126 d5224 transistor Bd132 Text: BD132 P HILIPS I N T E R N A T I O N A L SbE D • 711Dfl2b G D I42770 T*i7 M P H I N r-33-^r SILICON PLANAR EPITAXIAL POW ER TRANSISTOR P-N-P transistor in a SOT-32 plastic envelope for general purpose, medium power applications. N-P-N complement is BD131.	OCR Scan	BD132 711002b GDM2770 OT-32 BD131. O-126 OT-32) BD131 NPN POWER TRANSISTOR SOT-32 M 5229 IC GQM2771 IEC134 transistor af 126 d5224 transistor Bd132	PDF
Untitled Abstract: No abstract text available Text: BF199 N AMER PHILIPS/DISCRETE DbE D bbS3T31 DOlSHbD T T-3/-2. V SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor in a plastic TO-92 variant envelope. The BF199 has a very low feedback capacitance and is intended for use in the output stage of a vision	OCR Scan	BF199 bbS3T31 BF199 00122b3	PDF
Untitled Abstract: No abstract text available Text: J _ N AMER PHILIPS/DISCRETE □ bE D BF979 bbSBTBl 00 E B 3 fl T t ^ - M - ist SILICON PLANAR TRANSISTOR P-N-P transistor in a subminiature plastic T-package, primarily intended for application in r.f. stages in u.h.f. tuners using p-i-n diode attenuators.	OCR Scan	BF979 BF979_ bb53131 7Z82222	PDF
Untitled Abstract: No abstract text available Text: •I bb53t131 OOBS^flS 450 B A P X N AMER PHILIPS/DISCRETE PXTA 14 b?E D JV NPN SMALL-SIGNAL DARLINGTON TRANSISTOR NPN small-signal darlington transistor, housed in a microminiature envelope SOT-89 . It is intended primarily for use in preamplifier input applications requiring a high input impedance.	OCR Scan	bb53t OT-89)	PDF
Untitled Abstract: No abstract text available Text: BD131 _ y v _ SILICON PLANAR EPITAXIAL POWER TRANSISTOR N-P-N transistor in a SOT-32 plastic envelope for general purpose, medium power applications. P-N-P complement is BD132. Q U ICK R E F E R E N C E D A TA Collector-base voltage open emitter	OCR Scan	BD131 OT-32 BD132. DD34243 BD132 003424b	PDF
Untitled Abstract: No abstract text available Text: _ _ _ II BF967 N AMER PHILIPS/DISCRETE ObE D • b b S a ^ l ODlS3Ea b ■ ~ —— - — - ■^•-— — = ~ Zz :v ^ =— — • - —=— r-3!-/^ SILICON PLANAR TRANSISTOR V P-N-P transistor in a plastic T-package, primarily intended for application as gain controlled preamplifier	OCR Scan	BF967 b53T31 0Q1533E T-31-	PDF
A Simple Rise and Fall Time Waveform Control Abstract: AN-873 switching applications AN873 on semiconductor AN873 AN873 an873/D Text: Order this document by AN873/D ffy MOTOROLA AN-873 Semiconductor Products Inc. Application Note UNDERSTANDING POWER TRANSISTOR DYNAMIC BEHAVIOR — dv/dt EFFECTS ON SWITCHING AND RBSOA — P re p are d by W a rre n Sc h u ltz P o w e r P ro d u cts D iv isio n	OCR Scan	AN873/D AN-873 AN873/D A Simple Rise and Fall Time Waveform Control AN-873 switching applications AN873 on semiconductor AN873 AN873	PDF
d1694 Abstract: transistor D132 d-1694 BD131 D131 transistor d1687 TRANSISTOR D131 BD132 T4060 bm cb hen iv Text: BD131 JV _ SILICON PLANAR EPITAXIAL POWER TRANSISTOR N-P-N transistor in a SOT-32 plastic envelope fo r general purpose, medium power applications. P-N-P complement is BD132. Q U IC K R E F E R E N C E D A T A VCBO max. 70 V Collector-emitter voltage open base	OCR Scan	BD131 OT-32 BD132. O-126 OT-32) 345l4b d1694 transistor D132 d-1694 BD131 D131 transistor d1687 TRANSISTOR D131 BD132 T4060 bm cb hen iv	PDF
TVP1000 Abstract: BF979 sot 37 Text: BF979 Jl H AMER P H I L I P S / D I S C R E T E ' DbE 5 • fabSS^l 0 0 1 5 335 T - 3 M Ì T SILICON PLANAR TRANSISTOR P-N-P transistor in a subminiature plastic T-package, primarily intended for application in r.f. stages in u.h.f. tuners using p-i-n diode attenuators.	OCR Scan	jafa53131 001S33Ã BF979 500Si OT-37. TVP1000 BF979 sot 37	PDF
BD131 Abstract: D1891 D1687 TRANSISTOR D 1979 NPN POWER TRANSISTOR SOT-32 BD132 IEC134 Xpert transistor Bd132 Text: PHIL I P S I N T E R N A T I O N A L SbE D • 711 0 05 b QCm2 7 bO 04Ô « P H I N r - 3 3 - ò / SILICON PLANAR EPITAXIAL POWER TRANSISTOR N-P-N transistor in a SOT-32 plastic envelope for general purpose, medium power applications. P-N-P complement is BD132.	OCR Scan	BD131 711005b Q0427faD OT-32 BD132. O-126 OT-32) D1891 D1687 TRANSISTOR D 1979 NPN POWER TRANSISTOR SOT-32 BD132 IEC134 Xpert transistor Bd132	PDF
SIT Static Induction Transistor Abstract: 2SK180 thf-51 tokin sit transistor 2SK182E PLL for induction heating sit transistor 2SK183VE 2SK183 2SK182 Text: Another Tokin exclusive. Static Induction Ibansisiors SIT Static Induction Transistor w as in v e n te d by Professor Jun-ichi N ishizawa of Tohoku U niversity in 1950. After several s u b s e q u e n t technological d e v e lo p m e n ts a n d im p ro v e m e n ts, it w a s first utilized in 1979 as a n industrial p o w e r SIT.	OCR Scan	2-26A L-03E SIT Static Induction Transistor 2SK180 thf-51 tokin sit transistor 2SK182E PLL for induction heating sit transistor 2SK183VE 2SK183 2SK182	PDF
1GHz Oscillator Abstract: RCA 444 RCA microwave oscillator colpitts oscillator construction 547 relay ic rca transistor TA7943 colpitts oscillator rca409 100 watts transistor s-band Text: File IMo. 547 DUCB//D RF P o w er T ran sisto rs Solid State Division 40909 2-W, 2-GHz E m itte r-B a lla s te d Silicon N -P -N Overlay Transistor For Microwave Fundamental-Frequency Oscillators Features: • Emitter-ballasting resistors ■ 2-W {min. output at 2 GHz	OCR Scan	H-1629 O-201AA RCA-40909* RCA-40909 1GHz Oscillator RCA 444 RCA microwave oscillator colpitts oscillator construction 547 relay ic rca transistor TA7943 colpitts oscillator rca409 100 watts transistor s-band	PDF

H4042 Abstract: 5473B 2SB800 TC-5473B tc5473 Text: • D— S • S'— h NEC y 'J 3 > h- =7 Silicon Transistor 2SB800 PNPX 'J H > h # m O t mm, — T -i K 7 o 2S D 1001t 4 '* - y ■( , JT"'To 1 iffjDD’j'J ïL , r i i ] h F E 'C " 'i_ o 1.5 + 0.1 P t = 2.0 W ( 0.7 mmX 16 cm2-fe7 S -y VCeo > - 8 0 V, hFE = 200 TY P.(Ic = - 5 0 mA	OCR Scan	2SB800 2SD10011 OT-89) mmX16 H4042 5473B 2SB800 TC-5473B tc5473	PDF
OPTOCOUPLER tl 521 Abstract: P621 optocoupler optocoupler p621 all transistor P621 P626 Transistor transistor p621 optocoupler P 521 TLP639 P621 TOSHIBa transistor marking p6 Text: 5 . Supplem entary Inform ations 5-1 C urrent Transfer Ratio CTR and Trigger LED C urrent (IFT) Ranking and M arking Stan d ard rank classifications are applied for the C T R on transistor-type photocouplers and for IFT on S C R , Triac-type photocouplers. Product indications corresponding to rank names are as show n below.	OCR Scan	TLP121 OPTOCOUPLER tl 521 P621 optocoupler optocoupler p621 all transistor P621 P626 Transistor transistor p621 optocoupler P 521 TLP639 P621 TOSHIBa transistor marking p6	PDF
FT3812 Abstract: 2SC2431 2SC2432 FT3862 2SA1042 2sc2132 c 2432 FUJITSU 2SC2431 Text: FUJITSU 2SC 2431 2SC 2/132 SILICON HIGH SPEED POWER TRANSISTORS F T 3 8 1 2 (F T 3 8 6 2 ) Septem ber 1979 SILICON NPN RING EMITTER TRANSISTOR (RET) T h e 2 S C 2 4 3 1 /2 S C 2 4 3 2 are silicon N P N general purpose, high p o w e r sw itching transistors fa b ric a te d w ith Fujitsu 's u n iq u e Ring E m itte r T ran sis to r (R E T ) te c h	OCR Scan	2SC2431 2SC2432 FT3812 FT3862 FT3862 2SA1042 2sc2132 c 2432 FUJITSU 2SC2431	PDF
MJ10100 Abstract: MJ1002 RBSOA mj1010 AN-861 MJ10021 Text: AN-861 M O TO R O LA Semiconductor Products Inc. Application Note POWER TRANSISTOR SAFE OPERATING AREA — SPECIAL CONSIDERATIONS FOR MOTOR DRIVES Prepared by W a r re n S c h u ltz A p p lic a tio n s E n g in e e rin g M o t o r d rives p resent a u n iq u e set o f safe op erating area	OCR Scan	AN-861 AN861/D AN861/D MJ10100 MJ1002 RBSOA mj1010 AN-861 MJ10021	PDF
sot-89 Marking 8D Abstract: PXTA64 marking code 533-1 high voltage npn transistor SOT-89 darlington Text: •I bbSBIBl Ü025TA5 HSO N AUER PHILIPS/DISCRETE HAPX b?E PXTA U T> NPN SMALL-SIGNAL DARLINGTON TRANSISTOR NPN small-signal d a rlin g to n tran sisto r, housed in a m icro m in ia tu re envelope SO T-89 . It is intended p rim a rily fo r use in p re a m p lifie r in p u t ap p lica tio ns req u irin g a high in p u t impedance.	OCR Scan	D02STflS OT-89) PXTA64. OT-89. 100mA sot-89 Marking 8D PXTA64 marking code 533-1 high voltage npn transistor SOT-89 darlington	PDF
2SC2520 Abstract: "ring emitter" 2sa107 2SA1078 2SC2528 fujitsu ring emitter Text: F U J IT S U SUCON HIGH SPEED POWER TRANSISTOR 2SG 2528 Septem ber 1979 SILICON NPN RING EMITTER TRANSISTOR RET T h e 2S C 2 5 2 8 is a silicon NPN general purpose, m edium power transistor fabricated w ith Fujitsu's unique Ring E m itter Transistor (R E T ) technology. R E T devices are	OCR Scan	2SC2528 2SA1078, 10MHz 300jus 2SC2520 "ring emitter" 2sa107 2SA1078 fujitsu ring emitter	PDF
1G05 Abstract: 2SA1078 2SC2528 Text: FUJITSU SILICON HIGH SPEED POWER TRANSISTOR 2SA 1078 September 1979 SILICON PNP RING EM ITTER TRANSISTOR RET -a G The 2 S A 1 0 7 8 is a silicon PNP general purpose, m edium pow er transistor fabricated w ith Fujitsu's unique Ring E m itte r Transistor (R E T ) technology. R E T devices are	OCR Scan	2SA1078 2SA1078 2SC2528, 10MHz 20VilE 300ms 1G05 2SC2528	PDF
NPN transistor 2527 Abstract: 2SA1077 tf 011 Text: F U J IT S U SILICON HIGH SPEED POWER TRANSISTOR 2SA1077 Septem ber 1979 SILICON PNP RING EM ITTER TRANSISTOR RET T h e 2 S A 1 0 7 7 is silicon PNP general purpose, high pow er sw itching transistors fab ricated w ith Fujitsu's unique Ring E m itte r Transistor (R E T ) te c h n o lo g y. R E T	OCR Scan	2SA1077 2SA1077 50juA, 10MHz 300/is NPN transistor 2527 tf 011	PDF
TRANSISTOR 2SC Abstract: 2SA1077 2SC2527 NPN transistor 2527 high power switching transistor 2sc Text: F U J IT S U SILICON HIGH SPEED POWER TRANSISTOR 2SC 2527 Septem ber 1979 SILICON NPN RING EMITTER TRANSISTOR RET T h e 2 S C 2 5 2 7 is silicon N PN general purpose, high pow er sw itching transistors fabricated w ith Fujitsu's unique Ring E m itte r Transistor (R E T ) techn o lo g y. R E T	OCR Scan	2SC2527 50juA, 300jus TRANSISTOR 2SC 2SA1077 2SC2527 NPN transistor 2527 high power switching transistor 2sc	PDF
transistor 2sa 1072 Abstract: "ring emitter" transistor 2SA 2SA audio POWER TRANSISTORS 2SA1072 2SA1073 2SA107 transistors 2SA fujitsu ring emitter transistor 2sc pnp Text: F U J IT S U SILICON HIGH SPEED POWER TRANSISTOR 2SA1072 2SA1073 ^ September 1979 SILICON PNP RING EM ITTER TRANSISTOR RET T h e 2 S A 1 0 7 2 /2 S A 1 0 7 3 are silicon PNP general purpose, high p ow er sw itching transistors fabricated w ith Fujitsu's unique Ring E m itte r Transistor (R E T ) te c h	OCR Scan	2SA1072 2SA1073 1072/2SA 2SA1072/2SA1073 2522/2SC 2523age 10MHz 300ms transistor 2sa 1072 "ring emitter" transistor 2SA 2SA audio POWER TRANSISTORS 2SA1073 2SA107 transistors 2SA fujitsu ring emitter transistor 2sc pnp	PDF

TRANSISTOR D 1979 Search Results

TRANSISTOR D 1979 Result Highlights (5)

TRANSISTOR D 1979 Datasheets Context Search

BF939

Untitled

BD132

Untitled

Untitled

Untitled

Untitled

Untitled

A Simple Rise and Fall Time Waveform Control

d1694

TVP1000

BD131

SIT Static Induction Transistor

1GHz Oscillator

H4042

OPTOCOUPLER tl 521

FT3812

MJ10100

sot-89 Marking 8D

2SC2520

1G05

NPN transistor 2527

TRANSISTOR 2SC

transistor 2sa 1072