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    TRANSISTOR D 188 Search Results

    TRANSISTOR D 188 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR D 188 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NTE165

    Abstract: NPN Transistor 1500V
    Text: NTE165 Silicon NPN Transistor TV Horizontal Output Description: The NTE165 is a silicon NPN transistor in a TO3 type package designed for use in color TV horizontal output applications. Features: D High Voltage D High Power D High Switching Speed D Good Stability


    Original     		PDF NTE165 NTE165 100mA, NPN Transistor 1500V

    NPN/TRANSISTOR 187

    Abstract: NTE165
    Text: NTE165 Silicon NPN Transistor TV Horizontal Output Description: The NTE165 is a silicon NPN transistor in a TO3 type package designed for use in color TV horizontal output applications. Features: D High Voltage D High Power D High Switching Speed D Good Stability


    Original     		PDF NTE165 NTE165 100mA, 100mA NPN/TRANSISTOR 187

    Untitled

    Abstract: No abstract text available
    Text: NTE165 Silicon NPN Transistor TV Horizontal Output Description: The NTE165 is a silicon NPN transistor in a TO3 type package designed for use in color TV horizontal output applications. Features: D High Voltage D High Power D High Switching Speed D Good Stability


    Original     		PDF NTE165 NTE165 100mA,

    NPN Transistor 1500V

    Abstract: NTE165
    Text: NTE165 Silicon NPN Transistor TV Horizontal Output Description: The NTE165 is a silicon NPN transistor in a TO3 type package designed for use in color TV horizontal output applications. Features: D High Voltage D High Power D High Switching Speed D Good Stability


    Original     		PDF NTE165 NTE165 100mA, NPN Transistor 1500V

    NPN Transistor 1500V

    Abstract: transistor tl 187 187 npn transistor NPN Transistor 1500V 20a NTE238
    Text: NTE238 Silicon NPN Transistor Color TV, Horizontal Output Description: The NTE238 is a silicon NPN horizontal deflection transistor in a TO3 type package designed for use in deflection circuits. Features: D VCEX = 1500V D Safe Operating Area @ 50µs = 20A, 400V


    Original     		PDF NTE238 NTE238 Cont00V, NPN Transistor 1500V transistor tl 187 187 npn transistor NPN Transistor 1500V 20a

    NTE327

    Abstract: transistor NTE327
    Text: NTE327 Silicon NPN Transistor Power Amp, Switch Description: The NTE327 is a silicon NPN transistor in a TO3 type package designed for use in industrial amplifier and switching circuit applications. Features: D High Collector–Emitter Sustaining Voltage D High DC Current Gain


    Original     		PDF NTE327 NTE327 transistor NTE327

    NTE162

    Abstract: NPN Transistor 10A 400V
    Text: NTE162 Silicon NPN Transistor TV Vertical Deflection Description: The NTE162 is an NPN transistor in a TO3 type case designed for medium–to–high voltage inverters, converters, regulators, and switching circuits. Features: D High Voltage: VCEX = 400V D Gain Specified to 3.5A


    Original     		PDF NTE162 NTE162 200mA, NPN Transistor 10A 400V

    NTE163A

    Abstract: No abstract text available
    Text: NTE163A Silicon NPN Transistor Horizontal Deflection Description: The NTE163A is an NPN silicon transistor in a TO3 type case designed for use in large screen color deflection circuits. Features: D Collector–Emitter Voltage: VCEX = 1500V D Collector–Emitter Sustaining Voltage: VCEO sus = 700V


    Original     		PDF NTE163A NTE163A 100mA,

    NTE389

    Abstract: No abstract text available
    Text: NTE389 Silicon NPN Transistor Horizontal Output Description: The NTE389 is a high voltage silicon NPN power transistor in a TO3 type case designed for use in CRT horizontal deflection circuits. Features: D Collector–Emitter Voltage: VCEX = 1500V D Glass Passivated Base–Collector Junction


    Original     		PDF NTE389 NTE389

    tip122 tip127 audio amp schematic

    Abstract: mje521 equivalent BJT small signal low power BD139 MJ15003 300 watts amplifier 2N3773 pinout transistor mj11032 equivalent MJ11028 transistor equivalent 2n3055 IC 2N3773 audio amplifier diagram 2n222 TRANSISTOR use as audio amplifier
    Text: DL111/D Rev. 8, July-2001 Bipolar Power Transistor Data Bipolar Power Transistor Data DL111/D Rev. 8, Jul–2001  SCILLC, 2001 Previous Edition  1995 “All Rights Reserved’’ Grafoil is a registered Trademark of Union Carbide. Kon–Dux and Rubber–Duc are trademarks of Aavid Thermal Technologies, Inc.


    Original     		PDF DL111/D July-2001 r14525 tip122 tip127 audio amp schematic mje521 equivalent BJT small signal low power BD139 MJ15003 300 watts amplifier 2N3773 pinout transistor mj11032 equivalent MJ11028 transistor equivalent 2n3055 IC 2N3773 audio amplifier diagram 2n222 TRANSISTOR use as audio amplifier

    305 Power Mosfet MOTOROLA

    Abstract: Transistor motorola 418 MGW30N60
    Text: MOTOROLA Order this document by MGW30N60/D SEMICONDUCTOR TECHNICAL DATA Designer's  Data Sheet MGW30N60 Insulated Gate Bipolar Transistor Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced


    Original     		PDF MGW30N60/D MGW30N60 MGW30N60/D* 305 Power Mosfet MOTOROLA Transistor motorola 418 MGW30N60

    Transistor motorola 418

    Abstract: 305 Power Mosfet MOTOROLA MGW30N60
    Text: MOTOROLA Order this document by MGW30N60/D SEMICONDUCTOR TECHNICAL DATA Designer's  Data Sheet MGW30N60 Insulated Gate Bipolar Transistor Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced


    Original     		PDF MGW30N60/D MGW30N60 MGW30N60/D* Transistor motorola 418 305 Power Mosfet MOTOROLA MGW30N60

    NTE387MP

    Abstract: NTE387
    Text: NTE387 Silicon NPN Transistor Power Amp, Switch Features: D High Collector–Emitter Sustaining Voltage D High DC Current Gain D Low Collector–Emitter Saturation Voltage D Fast Switching Times Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150V


    Original     		PDF NTE387 NTE387MP NTE387

    max10169

    Abstract: 2SK702D
    Text: 6427525 N E C ELECTRONICS N E C 98 D INC E LECTRONICS INC 15 18881 D T - OOlflflfl], 3 PE 1 ^ 5 7 5 5 5 N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR 2SK702 D E SC R IPTIO N The 2SK702 is N-Channel MOS Field Effect Power Transistor PACAKGE D IM E N S IO N S


    OCR Scan     		PDF 2SK702 2SK702 T-39-11 max10169 2SK702D

    lem HA

    Abstract: transistor bu2520d BU2520D
    Text: N AMER PHILI PS /D IS CRE TE blE D • LbSBTBl 002fl37b 7SM M A P X Phjljps^Semiconductorg_ Productspe Silicon diffused power transistor BU2520D GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic


    OCR Scan     		PDF 002037b BU2520D lem HA transistor bu2520d BU2520D

    2SK659

    Abstract: No abstract text available
    Text: C ELECTRONICS INC Tfl »F|t.M27S2S DOlflñS11] D ~ f D ^ N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR 2SK659 D E S C R IP T IO N The 2 S K 6 5 9 is N-Channel M O S Field Effect Power Transistor P A C K A G E D IM E N S IO N S designed for solenoid, motor and lamp driver.


    OCR Scan     		PDF 2SK659 2SK659 -55to T-39-11

    PWS300

    Abstract: 2SK591 10VRM
    Text: 642 752 5 N E C N E C ELEC TRONI CS INC 98D 18840 DT-'J?-'// ELECTRONICS INC N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR 2SK591 D E S C R IP T IO N The 2SK591 is N-Channel M O S Field Effect Power Transistor P A C K A G E D IM E N S IO N S designed for solenoid, motor and lamp driver.


    OCR Scan     		PDF 2SK591 2SK591 4575B5 T-39-11 --V-90 PWS300 10VRM

    TGAM 1

    Abstract: 2SK702 G8TE
    Text: 6427525 N EC N E C E L E C T RO N I CS INC 9 8 D 18881 • " i n a n i m i ELECTRONICS INC 10 ti pi D T~ » 'B u n i f - / / 'il DE I tjLJEVSES DDlflflfli 3 11,11 " * " Ê~. ■ ■■ N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR 2SK702 DESCRIPTION The 2SK702 is N-Channel MOS Field Effect Power Transistor


    OCR Scan     		PDF jfaLtg75B5 2SK702 2SK702 TGAM 1 G8TE

    Untitled

    Abstract: No abstract text available
    Text: N E C ELECTRONICS INC "TA DeT|l,427S25 D D i a a S T □ I ~r ~ * el - ' i i D N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR 2SK659 D E S C R IP T IO N The 2 S K 6 5 9 is N-Channel M O S Field Effect Power Transistor P A C K A G E D IM E N S IO N S designed for solenoid, motor and lamp driver.


    OCR Scan     		PDF 427S25 2SK659 T-39-11

    CA3146P

    Abstract: No abstract text available
    Text: MOTOROLA _ _ SEMICONDUCTOR CA3146 TECHNICAL DATA General Purpose Transistor Array GENERAL PURPOSE TRANSISTOR ARRAY One Differentially Connected Pair and Three Isolated Transistor Arrays SILICON M O NOLITHIC IN T E G R A T E D CIRCUIT T he C A 3 1 46 is designed for general purpose, low power applications in the


    OCR Scan     		PDF CA3146 CA3146P

    BLW95

    Abstract: neutralization push-pull PHILIPS 4312 amplifier IEC134 w896 SOT-121A
    Text: PHILIPS I N T ERNATIONAL bSE D • 711002b ÜObBHQB J 323 PHIN BLW95 H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-AB operated high power industrial and m ilita ry transm itting equipment in the h.f. band. The transistor presents excellent performance as a


    OCR Scan     		PDF 00b3403 BLW95 711002b 00b3411 7Z77903 7Z77902 BLW95 neutralization push-pull PHILIPS 4312 amplifier IEC134 w896 SOT-121A

    Untitled

    Abstract: No abstract text available
    Text: N E C ELECTRONICS INC Tö DE | b4S7S2S OOlñññM T |~ B 8 4 D T - 3 ? - . : '¡^ 7 iïTap, - N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR ^. y. 2SK703 D E S C R IP T IO N The 2SK 703 is N-Channel MOS Field Effect Power Transistor P A C K A G E D IM EN SIO N S


    OCR Scan     		PDF 2SK703

    2N2222A 338

    Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
    Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK


    OCR Scan     		PDF 2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


    OCR Scan     		PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711