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    NTE238 Search Results

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    NTE238 Price and Stock

    NTE Electronics Inc NTE238

    Bipolar Transistor, Npn, 750V, To-3; Transistor Polarity:Npn; Collector Emitter Voltage Max:750V; Continuous Collector Current:8A; Power Dissipation:100W; Transistor Mounting:Through Hole; No. Of Pins:3Pins; Transition Frequency:- Rohs Compliant: Yes |Nte Electronics NTE238
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    Bristol Electronics NTE238 10 1
    • 1 $8.96
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    NTE238 3
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    Quest Components NTE238 26
    • 1 $11.505
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    NTE238 23
    • 1 $12.9431
    • 10 $11.505
    • 100 $10.6421
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    NTE238 6
    • 1 $12
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    NTE238 2
    • 1 $12.411
    • 10 $9.1014
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    NTE Electronics Inc NTE2381

    P Channel Mosfet, -500V, 2A, To-220; Channel Type:P Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:2A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:6V; Gate Source Threshold Voltage Max:4.5V; Msl:- Rohs Compliant: Yes |Nte Electronics NTE2381
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    NTE Electronics Inc NTE2383

    Mosfet, P Channel, 100V, 10.5A, To-220-3; Channel Type:P Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:10.5A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:2V Rohs Compliant: Yes |Nte Electronics NTE2383
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    Newark NTE2383 Bulk 1
    • 1 $8.12
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    Onlinecomponents.com NTE2383 23
    • 1 -
    • 10 $7.52
    • 100 $5.78
    • 1000 $5.16
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    Bristol Electronics NTE2383 3 1
    • 1 $11.2
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    NTE2383 2
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    Quest Components NTE2383 14
    • 1 $13.095
    • 10 $11.64
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    NTE2383 8
    • 1 $11.64
    • 10 $8.73
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    NTE2383 2
    • 1 $15
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    NTE2383 1
    • 1 $9.954
    • 10 $8.295
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    NTE Electronics Inc NTE2389

    Power Mosfet N-Channel 60V Id38A To-220 Case High Speed Switch Enhancement Mode | NTE Electronics Inc. NTE2389
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    RS NTE2389 Bulk 1 3 Weeks 1
    • 1 $6.7
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    Onlinecomponents.com NTE2389 2
    • 1 $7.06
    • 10 $6.42
    • 100 $4.9
    • 1000 $4.35
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    Bristol Electronics NTE2389 2 1
    • 1 $8.96
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    NTE2389 1
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    NTE Electronics Inc NTE2380

    Power Mosfet N-channel 500V Id=2A TO-220 Case High Speed Switch Enhancement Mode Rds=4 Ohm
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    Onlinecomponents.com NTE2380 367
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    Bristol Electronics NTE2380 2 1
    • 1 $8.96
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    Quest Components NTE2380 13
    • 1 $12.42
    • 10 $6.21
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    NTE2380 1
    • 1 $12
    • 10 $8
    • 100 $8
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    TME NTE2380 1 1
    • 1 $6.76
    • 10 $5.38
    • 100 $4.83
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    NTE238 Datasheets (12)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NTE238 NTE Electronics Silicon NPN Transistor Color TV, Horizontal Output Original PDF
    NTE238 NTE Electronics Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor NPN, Si, Color TV, Horizontal Output, Pkg Style TO3 Scan PDF
    NTE2380 NTE Electronics Complementary Silicon Gate MOSFET Enhancement Mode, High Speed Switch Original PDF
    NTE2381 NTE Electronics Complementary Silicon Gate MOSFET Enhancement Mode, High Speed Switch Original PDF
    NTE2382 NTE Electronics MOSFET N-Channel Enhancement Mode, High Speed Switch Original PDF
    NTE2383 NTE Electronics MOSFET P-Channel Enhancement Mode, High Speed Switch Original PDF
    NTE2384 NTE Electronics MOSFET N-Channel Enhancement Mode, High Speed Switch Original PDF
    NTE2385 NTE Electronics MOSFET N-Ch, Enhancement Mode High Speed Switch Original PDF
    NTE2386 NTE Electronics MOSFET N-Channel Enhancemen Mode, High Speed Switch Original PDF
    NTE2387 NTE Electronics MOSFET N-Channel Enhancement Mode, High Speed Switch Original PDF
    NTE2388 NTE Electronics MOSFET N-Channel Enhancement Mode, High Speed Switch Original PDF
    NTE2389 NTE Electronics MOSFET N-Ch, Enhancement Mode High Speed Switch Original PDF

    NTE238 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NPN Transistor 1500V

    Abstract: transistor tl 187 187 npn transistor NPN Transistor 1500V 20a NTE238
    Text: NTE238 Silicon NPN Transistor Color TV, Horizontal Output Description: The NTE238 is a silicon NPN horizontal deflection transistor in a TO3 type package designed for use in deflection circuits. Features: D VCEX = 1500V D Safe Operating Area @ 50µs = 20A, 400V


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    PDF NTE238 NTE238 Cont00V, NPN Transistor 1500V transistor tl 187 187 npn transistor NPN Transistor 1500V 20a

    NTE2382

    Abstract: NTE2383
    Text: NTE2382 MOSFET N–Channel Enhancement Mode, High Speed Switch Compl to NTE2383 Description: The NTE2382 is a MOS power N–Channel FET in a TO220 type package designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid, and relay


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    PDF NTE2382 NTE2383) NTE2382 NTE2383

    NTE2385

    Abstract: No abstract text available
    Text: NTE2385 MOSFET N–Ch, Enhancement Mode High Speed Switch Features: D Dynamic dv/dt Rating D Repetitive Avalanche Rated D Fast Switching D Ease of Paralleling D Simple Drive Requirements Absolute Maximum Ratings: Continuous Drain Current VGS = 10V , ID TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8.0A


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    PDF NTE2385 NTE2385

    NTE2383

    Abstract: NTE2382
    Text: NTE2383 MOSFET P–Channel Enhancement Mode, High Speed Switch Compl to NTE2382 Description: The NTE2383 is a MOS power P–Channel FET in a TO220 type package designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid, and relay


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    PDF NTE2383 NTE2382) NTE2383 NTE2382

    NTE2388

    Abstract: No abstract text available
    Text: NTE2388 MOSFET N–Channel Enhancement Mode, High Speed Switch Description: The NTE2388 is an N–Channel Enhancement Mode Power MOS Field Effect Transistor in a TO220 type package designed for low voltage, high speed power switching applications such as switching


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    PDF NTE2388 NTE2388

    NTE2381

    Abstract: No abstract text available
    Text: NTE2380 N–Ch & NTE2381 (P–Ch) Complementary Silicon Gate MOSFETs Enhancement Mode, High Speed Switch Description: The NTE2380 (N–Ch) and NTE2381 (P–Ch) are complementary TMOS power FETs in a TO220 type package designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid, and relay drivers.


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    PDF NTE2380 NTE2381 NTE2381

    Untitled

    Abstract: No abstract text available
    Text: NTE2387 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)800 V(BR)GSS (V)30 I(D) Max. (A)4 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)125 Minimum Operating Temp (øC)


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    PDF NTE2387

    mosfet NTE2384

    Abstract: NTE2384 mosfet for 900V, 6A
    Text: NTE2384 MOSFET N-Channel Enhancement Mode, High Speed Switch Absolute Maximum Ratings: Drain-Source Voltage TJ = +25° to +150°C , VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900V Drain-Gate Voltage (TJ = +25° to +150°C, RGS = 1MΩ), VDGR . . . . . . . . . . . . . . . . . . . . . . . . . . 900V


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    PDF NTE2384 00A/s, mosfet NTE2384 NTE2384 mosfet for 900V, 6A

    NTE2389

    Abstract: No abstract text available
    Text: NTE2389 MOSFET N–Ch, Enhancement Mode High Speed Switch Absolute Maximum Ratings: TA = +25°C unless otherwise specified Drain–Source Voltage, VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V


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    PDF NTE2389 NTE2389

    Untitled

    Abstract: No abstract text available
    Text: NTE2381 Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)500 V(BR)GSS (V)20 I(D) Max. (A)2 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)75 Minimum Operating Temp (øC)


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    PDF NTE2381

    NTE2387

    Abstract: No abstract text available
    Text: NTE2387 MOSFET N–Channel Enhancement Mode, High Speed Switch Absolute Maximum Ratings: Drain–Source Voltage, VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V Drain–Gate Voltage RGS = 20kΩ , VDGR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V


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    PDF NTE2387 NTE2387

    N-Channel Enhancemen-Mode MOSFET

    Abstract: NTE2386
    Text: NTE2386 MOSFET N–Channel Enhancemen Mode, High Speed Switch Description: The NTE2386 Power MOSFET features advantages such as voltage control, very fast switching, ease of paralleling and temperature stability, and is suited for applications such as switching power


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    PDF NTE2386 NTE2386 N-Channel Enhancemen-Mode MOSFET

    Untitled

    Abstract: No abstract text available
    Text: NTE2386 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)600 V(BR)GSS (V)20 I(D) Max. (A)6 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)150 Minimum Operating Temp (øC)


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    PDF NTE2386

    Untitled

    Abstract: No abstract text available
    Text: NTE2384 MOSFET N–Channel Enhancement Mode, High Speed Switch Absolute Maximum Ratings: Drain–Source Voltage, VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V Drain–Gate Voltage RGS = 20kΩ , VDGR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V


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    PDF NTE2384

    MA03-2

    Abstract: MA032 ipos 150 MD012A MD090 MA020 MA04-1 MA033 NTE261 MD001A
    Text: MCP18480 -48V 热插拔控制器 特征 说明 • 允许在带电背板上安全拔插插板 • 可提供故障检测和精确定时所需的准确 (<1.5%) 内部参考电压 • 可设定的返送电流限定值 • 可设定的电路断路器电流限定值


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    PDF MCP18480 11F-3, D-85737 NL-5152 MA03-2 MA032 ipos 150 MD012A MD090 MA020 MA04-1 MA033 NTE261 MD001A

    Arduino Mega2560

    Abstract: 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l
    Text: ND3% BASE1 XXXX2108-0010-1-P 10 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 15-07-11 Hour: 13:07 TS:TS date TS time MCUS, MPUS, DSPS & DEVELOPMENT TOOLS Find Datasheets Online 8-BIT MCUS & DEVELOPMENT TOOLS 1 PSoC 3 DEVELOPMENT KITS ARDUINO MCU DEVLOPMENT PLATFORM


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    PDF CY8C38 CY8C29 incl795 12T9797 12T9804 12T9803 12T9800 12T9802 12T9801 12T9805 Arduino Mega2560 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l

    Untitled

    Abstract: No abstract text available
    Text: M MCP18480 -48V Hot Swap Controller Features Description • Allows safe board removal and insertion from a live backplane • Accurate <1.5% internal voltage reference for fault detection and precision timing • Programmable foldback current limiting • Programmable circuit breaker current limiting


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    PDF MCP18480 MCP18480 DK-2750 D-85737 DS20091B-page

    NTE199

    Abstract: NTE2324 NTE262 NTE109 NTE3098 nte222 NTE290A nte184 NTE192A NTE309K
    Text: Semiconductor Directory Mfr.Õs Type 13 Price Mfr.Õs Code Page Mfr.Õs Type Price Mfr.Õs Code Page Mfr.Õs Type Price Mfr.Õs Code Page Mfr.Õs Type Price Mfr.Õs Code Page MPX2010GS MPX2050DP MPX2050GP MPX2100A MPX2100AP 15.08 17.27 17.69 17.74 14.57 MOT


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    PDF MPX2010GS MTP75N06HD NTE102A NTE2312 MPX2050DP MTP8N50E NTE103 NTE2315 MPX2050GP MTW10N100E NTE199 NTE2324 NTE262 NTE109 NTE3098 nte222 NTE290A nte184 NTE192A NTE309K

    STk442-130

    Abstract: M56730ASP PAC011A PAC010A UPC2581 PAL005A stk413-020a upc2581v ecg semiconductors master replacement guide STRS5717
    Text: C52_pg_337~347 8/16/07 11:47 AM Page 337 Semiconductors/ Components SEMICONDUCTORS MCM has an extensive selection of SMD Surface Mount Devices which are denoted on the following page with an *(asterisk)! COUNT ON MCM TO ALWAYS PROVIDE. section 16 Semiconductors/Components


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    PDF 100-up) STk442-130 M56730ASP PAC011A PAC010A UPC2581 PAL005A stk413-020a upc2581v ecg semiconductors master replacement guide STRS5717

    100 amp npn darlington power transistors

    Abstract: NTE290A NTE123AP IC 741 amp 10 amp npn darlington power transistors NTE159 NTE2395 nte199 100 amp darlington power transistors power transistor CURRENT SWITCH 0.5 1 AMP
    Text: 1995-2012.qxp:QuarkCatalogTempNew 9/11/12 8:56 AM Page 1995 25 Transistors and MOSFETs Silicon Bipolar Transistors Collector to Base V Collector to Emitter (V) Emitter to Base (V) Typical Fwd. Current Gain NPN NPN NPN NPN NPN NPN NPN NPN NPN 0.5 15.0 4.0


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    PDF NTE289A¸ NTE385¸ NTE184¸ NTE196¸ NTE181¸ NTE175¸ NTE311¸ NTE85¸ NTE287¸ NTE382 100 amp npn darlington power transistors NTE290A NTE123AP IC 741 amp 10 amp npn darlington power transistors NTE159 NTE2395 nte199 100 amp darlington power transistors power transistor CURRENT SWITCH 0.5 1 AMP

    SSH6N80

    Abstract: ptc6063 equivalent MTW15N25E SPA08N80C3 NTE2393 NTE99 SE7055 MTP4N90 SK3024 se5020
    Text: STI Type: MTM8N55 Notes: Breakdown Voltage: 550 Continuous Current: 8 RDS on Ohm: .50 Trans Conductance Mhos: 2.0 Trans Conductance A: 4.5 Gate Threshold min: Gate Threshold max: Resistance Switching ton: 70 Resistance Switching toff: 430 Resistance Switching ID: 4.0


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    PDF MTM8N55 O-204AA/TO-3 MTM8N60 MTM8N40 O-262/I-2 SSI2N60B SSI4N60B SSH6N80 ptc6063 equivalent MTW15N25E SPA08N80C3 NTE2393 NTE99 SE7055 MTP4N90 SK3024 se5020

    mos fet k 2717

    Abstract: transorb 200v 2N5400 MCP18480 MPSA43 NTE2388 NTE261 12v regulated power supply using centre tap
    Text: M MCP18480 Evaluation Board User’s Guide  2002 Microchip Technology Inc. Advance Information DS51302A Note the following details of the code protection feature on Microchip devices: • Microchip products meet the specification contained in their particular Microchip Data Sheet.


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    PDF MCP18480 DS51302A D-85737 DS51302A-page mos fet k 2717 transorb 200v 2N5400 MCP18480 MPSA43 NTE2388 NTE261 12v regulated power supply using centre tap

    NTE2382

    Abstract: No abstract text available
    Text: POWER MOS FIELD EFFECT TRANSISTORS NTE Type Number Description 66 N-CHANNEL Enhancement Mode High Speed Switch N-CHANNEL Enhancement Mode High Speed Switch N-CHANNEL Enhancement Mode High Speed Switch N-CHANNEL Enhancement Mode High Speed Switch N-CHANNEL


    OCR Scan
    PDF T0220 150ns, 350ns, 110ns, 160ns NTE2382

    dual TMB 1800

    Abstract: chopper trans 60NS MOSFET 50 amp 1000 volt MOSFET RF P-channel VHF low noise dual P-Channel JFET
    Text: N T E ELE CTRONICS INC SSE D bMaiSST 000Sb2S TMb BIN TE T -tt-O l DWER MOS Fi Gatato Source Cutott Voltage Volta Gate to Source Breakdown Voltage (Volt») Maximum Continuous Drain Currant (Amp*) BVosa ±20 Max >D ros(On) 12 0.18 Max case Styl« Di»g. Number


    OCR Scan
    PDF 000Sb2S NTE2381) T0220 250pA dual TMB 1800 chopper trans 60NS MOSFET 50 amp 1000 volt MOSFET RF P-channel VHF low noise dual P-Channel JFET