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    Abstract: No abstract text available
    Text: N AUER PHILIPS/DISCRETE bRE D • bbS3R31 002fl37b 724 « A P X Philips specification Silicon diffused power transistor BU2520D GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic


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    lem HA

    Abstract: transistor bu2520d BU2520D
    Text: N AMER PHILI PS /D IS CRE TE blE D • LbSBTBl 002fl37b 7SM M A P X Phjljps^Semiconductorg_ Productspe Silicon diffused power transistor BU2520D GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic


    OCR Scan     		PDF 002037b BU2520D lem HA transistor bu2520d BU2520D

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    Abstract: No abstract text available
    Text: PD - 9 .1 4 5 2D International I R Rectifier IRG4BC30U PRELIMINARY Ultra Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • UltraFast: Optim ized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter


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