TRANSISTOR COMMON BASE CONFIGURATION Search Results

TRANSISTOR COMMON BASE CONFIGURATION Result Highlights (6)

Part	Manufacturer	Description
SSM10N961L	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET x 2, Common drain, VSSS=30 V, 0.0128 Ω@10V, TCSPAG-341501
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTOR COMMON BASE CONFIGURATION Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
RF NPN POWER TRANSISTOR 2 GHZ Abstract: AM82223-018 Text: AM82223-018 RF & MICROWAVE TRANSISTORS TELEMETRY APPLICATIONS Features • • • • • • 2.2 - 2.3 GHz 24 VOLTS INPUT / OUTPUT MATCHING POUT = 18 W MINIMUM GP = 6.5 dB GAIN MINIMUM COMMON BASE CONFIGURATION DESCRIPTION: The AM82223-018 is a common base NPN silicon bipolar transistor	Original	PDF	AM82223-018 AM82223-018 RF NPN POWER TRANSISTOR 2 GHZ
PH2729430M Abstract: No abstract text available Text: = .- =_ ‘E an AMP company Radar Pulsed Power Transistor, 13OW, IOOps Pulse, 10% Duty 2.7 - 2.9 GHz PH2729430M Features NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation New Power Dense Interdigitated Geometry	Original	PDF	PH2729430M Vccs36 PH2729430M
13MM Abstract: PH3134-2OL transistor f20 PH3134 Text: Radar Pulsed Power Transistor, 2OW, 300~s Pulse, 10% Duty PH3134-2OL 3.1 - 3.4 GHz Features NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry Diffused Emitter Ballasting Resistors	Original	PDF	PH3134-2OL 13MM PH3134-2OL transistor f20 PH3134
PH2323-3 Abstract: NPN TRANSISTOR Z4 RF NPN POWER TRANSISTOR 3 GHZ TRANSISTOR Z4 transistor c s z 44 v 4 ghz transistor Text: an AMP cormany CW Power Transistor, 2.3 GHz 3.5W PH2323-3 v2.00 Features NPN Silicon Microwave Power Transistor Common Base Configuration Class C Operation Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metalization System Hermetic MetalCeramic Package	Original	PDF	PH2323-3 PH2323-3 NPN TRANSISTOR Z4 RF NPN POWER TRANSISTOR 3 GHZ TRANSISTOR Z4 transistor c s z 44 v 4 ghz transistor
b 595 transistor Abstract: Mallory Capacitor transistor b 595 J3 transistor transistor 15j30 Rogers 6010.5 PH3135-5M electrolytic Mallory Capacitor MICROWAVE TEST FIXTURE Text: =s = =-= ‘, = * an AMP .- -=r= FF company Radar Pulsed Power Transistor, 5W, loops Pulse, 10% Duty PH31355M 3.1 - 3.5 GHz Features NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry	Original	PDF	PH31355M 15-j3 b 595 transistor Mallory Capacitor transistor b 595 J3 transistor transistor 15j30 Rogers 6010.5 PH3135-5M electrolytic Mallory Capacitor MICROWAVE TEST FIXTURE
TRANSISTOR Z4 Abstract: No abstract text available Text: an AMP company Radar Pulsed Power Transistor, SW, loops Pulse, 10% Duty PHI 214-6M 1.2 - 1.4 GHz Features NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation Interdigitated Geometry Diffused Emitter Ballasting Resistors	Original	PDF	214-6M TRANSISTOR Z4
12C TRANSISTOR Abstract: transistor j39 transistor J45 Text: an AMP comnanv Radar Pulsed Power Transistor, 25W, lps Pulse, 10% Duty PHI21 4-25s 1.2 - 1.4 GHz v2.00 Features - - - ,320 NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry	Original	PDF	PHI21 4-25s l214-25M 12C TRANSISTOR transistor j39 transistor J45
PH2731-20M Abstract: 3 w RF POWER TRANSISTOR 2.7 ghz Text: an AMP company Radar Pulsed Power Transistor, 2OW, loops Pulse, 10% Duty PH2731-20M 2.7 - 3.1 GHz v2.00 9co Features ,-^ :22.85> NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigicated Geometry	Original	PDF	PH2731-20M PI42731 PH2731-20M 3 w RF POWER TRANSISTOR 2.7 ghz
PH1214-2M Abstract: .15 j63 1.5 j63 1035 transistor Text: an AMP company Radar Pulsed Power Transistor, 2W, loops Pulse, 10% Duty 1.2 - 1.4 GHz PH1214-2M v2.00 Features c_I- NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation Interdigitated Geometry Diffused Emitter Ballasting Resistors	Original	PDF	PH1214-2M 214-2M PH1214-2M .15 j63 1.5 j63 1035 transistor
J37 transistor Abstract: transistor j8 transistor j37 J370 capacitor J37 PH3134-9L transistor j145 Text: = - an AMP company Radar Pulsed Power Transistor, SW, 300~s Pulse, 10% Duty Pti3134-9L 3.1 - 3.4 GHz Features NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency InterdigitatedGeometry Diffused Emitter Ballasting Resistors	Original	PDF	Pti3134-9L t23MM, J37 transistor transistor j8 transistor j37 J370 capacitor J37 PH3134-9L transistor j145
13MM Abstract: PH1214-4M Text: =7 an AMP comDanv = E Radar Pulsed Power Transistor, 4W, loops Pulse, 10% Duty PH1214-4M 1.2 - 1.4 GHz Features NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation Interdigitated Geometry Diffused Emitter Ballasting Resistors	Original	PDF	PH1214-4M TT50M5OA 2052-56X-02 13MM PH1214-4M
transistor Common Base configuration Abstract: PH1214-8M Text: * =s=-z-s .- z = -= = x5 r = an AMP company v2.00 Radar Pulsed Power Transistor, SW, loops Pulse, 10% Duty 1.2 - 1.4 GHz PH1214-8M Features NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation Interdigitated Geometry	Original	PDF	PH1214-8M 3226stor, transistor Common Base configuration PH1214-8M
transistor c2383 Abstract: c2383 transistor C2383 C2383 NPN Transistor PH1214-30EL Text: an AMP company Radar Pulsed Power Transistor, 3OW, 1 .Oms Pulse, 10% Duty PHI 214-30EL . 1.2 - 1.4 GHz v2.00 Features _-.- - - =.* NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation Matrix Geometry Diffused Emitter Ballasting Resistors	Original	PDF	214-30EL 37kC13 PH1214-30EL transistor c2383 c2383 transistor C2383 C2383 NPN Transistor PH1214-30EL
transistor c36 Abstract: wacom wacom connector transistor j8 f 9234 transistor B 325 PH3134 Text: =5= ,-= E -= EF an AMP company * ,- .-z = Radar Pulsed Power Transistor, 11 W, lps Pulse, 10% Duty PH3134-11s 3.1 - 3.4 GHz Features NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry	Original	PDF	PH3134-11s MJLLIMET1344) transistor c36 wacom wacom connector transistor j8 f 9234 transistor B 325 PH3134

wacom Abstract: 3 w RF POWER TRANSISTOR 2.7 ghz PH2729-8SM Text: = = -E-= S‘,J =- = E .- -= = = r - an AMP company * Radar Pulsed Power Transistor, 8.5W, loops Pulse, 10% Duty PH2729-8SM 2.7 - 2.9 GHz v2.00 Features 903 22.86: NPM Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation	Original	PDF	PH2729-8SM Sii255-24-f wacom 3 w RF POWER TRANSISTOR 2.7 ghz PH2729-8SM
Radar Abstract: PH1214-12M radar 77 ghz Text: Radar Pulsed Power Transistor 12 Watts, 1.20-1.40 GHz PH1214-12M PH1214-12M Radar Pulsed Power Transistor - 12 Watts, 1.20-1.40 GHz, 150 µS Pulse, 10% Duty 1 Features • • • • • • • • Outline Drawing NPN Silicon Microwave Power Transistor Common Base Configuration	Original	PDF	PH1214-12M PH1214-12M pul2266, Radar radar 77 ghz
transistor power 5w Abstract: Transistor 5503 transistor 1271 SILICON npn POWER TRANSISTOR c 869 D 595 transistor transistor J17 2052-5636-02 transistor C 1344 transistor Common Base configuration j170 Text: an AMP company CW Power Transistor, ,2.3 GHz 5W PH2323-5 v2.00 Features l l l l l l l NPN Silicon Microwave Power Transistor Common Base Configuration Class C Operation Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metalization System	Original	PDF	PH2323-5 transistor power 5w Transistor 5503 transistor 1271 SILICON npn POWER TRANSISTOR c 869 D 595 transistor transistor J17 2052-5636-02 transistor C 1344 transistor Common Base configuration j170
transistor j39 Abstract: J31 transistor Text: T=- an AMP ‘5 cornRaw Radar Pulsed Power Transistor, IlOW, loops Pulse, 10% Duty PH2729-11 OM 2.7 - 2.9 GHz Features NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry Diffused Emitter Ballasting Resistors	Original	PDF	PH2729-11 5oos41V104KP4 ci7-11- 9-21s transistor j39 J31 transistor
Mallory Capacitor Abstract: No abstract text available Text: -= -=z an AMP company = Radar Pulsed Power Transistor, 3OW, lps Pulse, 10% Duty PH3134-30s 3.1 - 3.4 GHz v2.00 Features NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry Diffused Emitter Ballasting Resistors	Original	PDF	PH3134-30s 7305025e-01 Mallory Capacitor
Untitled Abstract: No abstract text available Text: N AUER PHILIPS/DISCRETE bbS3T31 DDS7b74 707 b^E » IAPX B hcJ24 H.F. SILICON PLANAR EPITAXIAL TRANSISTOR P-N-P transistor in a plastic envelope especially intended fo r r.f. stages in f.m. front-ends in common base configuration. QUICK REFERENCE DATA Collector-base voltage open emitter	OCR Scan	PDF	bbS3T31 DDS7b74 hcJ24 BF324 DD27b77
Untitled Abstract: No abstract text available Text: AjtÁ CW Power Transistor PH2323-6 Preliminary 6.0 Watts, 2.30 GHz Features Outline Drawing • NPN Silicon Microwave Power Transistor • Common Base Configuration • Class C Operation • Interdigitated Geometry • Diffused Emitter Ballasting Resistors	OCR Scan	PDF	PH2323-6 513MM) 5b422D5 00013D3
TRANSISTOR zo 109 ma Abstract: transistor zo 109 transistor TI 310 Rogers 6010.5 PH2856 Text: Linear Accelerator Pulsed Power Transistor PH2856-22 22 Watts, 2.856 GHz, 12 jlis Pulse, 10% Duty Features Outline Drawing • NPN Silicon Microwave Power Transistor • Common Base Configuration • Class C Operation • High Efficiency Interdigitated Geometry	OCR Scan	PDF	PH2856-22 TT50M50A ATC100A TRANSISTOR zo 109 ma transistor zo 109 transistor TI 310 Rogers 6010.5 PH2856
BFY88 Abstract: Telefunken u 237 transistor marking code 2C BFY 88 telefunken C80 ui77 silicon npn planar rf transistor sot 143 IMB 06 C BFY 52 transistor 95288 Text: TELEFUNKEN ELECTRONIC m ilp y M IM electronic Ö1C D • fi^SOQRb 0005332 b 'T- BFY 88 Creative Technologies Silicon NPN Epitaxial Planar RF Transistor Applications: VHF amplifier stages, pre-stages In common emitter configuration Oscillating mixer stages in common base configuration	OCR Scan	PDF	i200Rb D0DS332 ft-11 569-GS 000s154 hal66 if-11 BFY88 Telefunken u 237 transistor marking code 2C BFY 88 telefunken C80 ui77 silicon npn planar rf transistor sot 143 IMB 06 C BFY 52 transistor 95288
transistor yb Abstract: M220S transistor t 04 27 Text: Afa Radar Pulsed Power Transistor PH0404-1OOEL 100 Watts, 0.420-0.450 GHz, 20 ms Pulse, 20% Duty Features Outline Drawing • NPN Silicon Microwave Power Transistor • Common Base Configuration • Broadband Class C Operation • Reliable Fishbone Geometry	OCR Scan	PDF	PH0404-1OOEL M220S PH0404-lOOEL 5b422DS transistor yb transistor t 04 27

TRANSISTOR COMMON BASE CONFIGURATION Search Results

TRANSISTOR COMMON BASE CONFIGURATION Result Highlights (6)

TRANSISTOR COMMON BASE CONFIGURATION Datasheets Context Search

RF NPN POWER TRANSISTOR 2 GHZ

PH2729430M

13MM

PH2323-3

b 595 transistor

TRANSISTOR Z4

12C TRANSISTOR

PH2731-20M

PH1214-2M

J37 transistor

13MM

transistor Common Base configuration

transistor c2383

transistor c36

wacom

Radar

transistor power 5w

transistor j39

Mallory Capacitor

Untitled

Untitled

TRANSISTOR zo 109 ma

BFY88

transistor yb