TRANSISTOR SMD MARKING CODE
Abstract: 4E smd diode smd code marking sot23 smd diode marking code transistor marking code SOT-23 marking code s1 SMD diode MOSFET marking smd on semiconductor marking code sot MOSFET SMD MARKING CODE TRANSISTOR SMD npn MARKING CODE
Text: Discrete Semiconductor Sample Kit Low Power SMD Central Semiconductor Sample Kits provide designers with the discrete semiconductors ideally suited for the latest design challenges. The Low Power SMD Sample Kit includes a variety of diodes and MOSFETs suitable for general purpose
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100mA
200mA
OD-323
CMDSH05-4
500mA
OT-23
TRANSISTOR SMD MARKING CODE
4E smd diode
smd code marking sot23
smd diode marking code
transistor marking code SOT-23
marking code s1 SMD diode
MOSFET marking smd
on semiconductor marking code sot
MOSFET SMD MARKING CODE
TRANSISTOR SMD npn MARKING CODE
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transistor marking 44 sot23
Abstract: marking code diode 04 Diode SMA marking code PD MARKING CODE 028a sot 23 schottky diode 40a marking 1PC on SEMICONDUCTOR MARKING transistor C5D SOT323 MOSFET P hFE-100
Text: Discrete Semiconductor Sample Kit DC-DC Power Supply Applications Central Semiconductor sample kits provide designers with the discrete semiconductor devices ideal for their latest design challenges. The contents of this 3 part sample kit include examples of Central Semiconductor devices most
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CMSH1-20ML
CMSH2-20M
CMSH2-20L
CMSH3-20MA
CMSH3-20L
CMSH5-20
CS20ML
CS220M
200mA
CMDSH05-4
transistor marking 44 sot23
marking code diode 04
Diode SMA marking code PD
MARKING CODE 028a sot 23
schottky diode 40a
marking 1PC
on SEMICONDUCTOR MARKING
transistor C5D
SOT323 MOSFET P
hFE-100
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Untitled
Abstract: No abstract text available
Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MS2272 RF AND MICROWAVE TRANSISTORS AVIONICS APPLICATIONS C • • • • • • • • 255 MHz BANDWIDTH GOLD METALLIZATION EMITTER SITE BALLASTED POUT = 350W MINIMUM
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MS2272
1234567869ABC
1234567869ABC
MS2272
C8238C4654
DA64DFC1D8DC
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Untitled
Abstract: No abstract text available
Text: MAX16813 Evaluation Kit General Description The MAX16813 evaluation kit EV kit demonstrates the MAX16813 high-brightness LED (HB LED) driver, integrating a step-up DC-DC preregulator followed by 4 channels of linear current sinks. The step-up preregulator
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MAX16813
350kHz
600mA
150mA
100mA
150mA
400ms.
MAX16813
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Untitled
Abstract: No abstract text available
Text: MAX16813 Evaluation Kit General Description The MAX16813 evaluation kit EV kit demonstrates the MAX16813 high-brightness LED (HB LED) driver, integrating a step-up DC-DC preregulator followed by 4 channels of linear current sinks. The step-up preregulator
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MAX16813
350kHz
600mA
150mA
100mA
150mA
400ms.
MAX16813
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stc5dnf30v
Abstract: JESD97
Text: STC5DNF30V Dual N-channel 30V - 0.032Ω - 4.5A - TSSOP8 2.7V-Driver STripFET Power MOSFET General features Type VDSS RDS on ID STC5DNF30V 30V < 0.035Ω (@4.5V) < 0.040Ω (@2.7V) 4.5A • Standard outline for easy automated surface mount assembly ■
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STC5DNF30V
stc5dnf30v
JESD97
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SC5089 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5Q89 VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS. • U n it in mm Low Noise Figure, High Gain. +G.5 3.5- a s N F —l.ldB , |S2 le|2—13dB f—1GHz •i a ii5 1 . 0 - 0.15 C5d MAXIMUM RATINGS (Ta = 25°C)
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2SC5089
2SC5Q89
2--13dB
SC-59
--j50
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bvc62
Abstract: transistor BD 139 Transistor 5332 bvc62 smd philips 2322 734 UT70-25 smd transistor k2 2222 500 16641 transistor BD B1 SMD u 9330
Text: Philips Semiconductors Product specification UHF linear push-pull power transistor FEATURES BLV859 PINNING SOT262B • Double internal input and output matching for an optimum wideband capability and high gain • Polysilicon emitter ballasting resistors for an optimum
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BLV859
OT262B
711002b
OT262B.
711Dfi5b
bvc62
transistor BD 139
Transistor 5332
bvc62 smd
philips 2322 734
UT70-25
smd transistor k2
2222 500 16641
transistor BD B1 SMD
u 9330
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KTA1666
Abstract: KTC4379 OB2 SOT-89
Text: SEMICONDUCTOR TECHNICAL DATA KTC4379 EPITAXIAL PLANAR NPN TRANSISTOR POWER AMPLFIER APPLICATION. POWER SWITCHING APPLICATION. FEATURES • Low Saturation Voltage. : VcE sat =0.5V(Max.) (IC=1A) • High Speed Switching Time: tstg=1.0j/S(Typ.) • PC=1~2W (Mounted on Ceramic Substrate)
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KTC4379
KTA1666.
KTC4379
250mm
250mm2
KTA1666
OB2 SOT-89
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philips resistor 2322-153
Abstract: philips e3 SOT171 BLV97CE IEC134 ferroxcube wideband hf choke transistor C 548 B Philips
Text: bSE D Philips Semiconductors Product specification date of issue March 1993 711002b □□b30bö 75b IPHIN BLV97CE Data sheet status WM UHF power transistor FEATURES QUICK REFERENCE DATA • Internal input matching to achieve high power gain • Ballasting resistors for an optimum
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711002b
BLV97CE
OT171
philips resistor 2322-153
philips e3
SOT171
BLV97CE
IEC134
ferroxcube wideband hf choke
transistor C 548 B Philips
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Untitled
Abstract: No abstract text available
Text: T O SH IB A RN2112,RN2113 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2112, RN2113 Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. • • • • 1.6 ± 0.2 0.8 ± 0.1 With Built-in Bias Resistors
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RN2112
RN2113
RN2112,
RN1112,
RN1113
RN2112
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KTA1504S
Abstract: KTC3875S
Text: SEMICONDUCTOR TECHNICAL DATA KTA1504S EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Excellent Iife Linearity : hFE 0.1m A /hF E (2m A )= 0.95(T yp.). DIM A B C D E G H J • Low Noise : NF=ldB(Typ.), 10dB(Max.).
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KTA1504S
KTC3875S.
KTA1504S
KTC3875S
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IGBT K 40 T 1202
Abstract: No abstract text available
Text: TOSHIBA TF1207 TOSHIBA SOLID STATE IGBT GATE DRIVER MODULE T F 1 20 7 Unit in mm TOSHIBA TF1207 is the IGBT gate driver designed for use with TOSHIBA Insulated Gate Bipolar Transistor odule and it includes the optical isolator and IGBT gate driver circuit.
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TF1207
TF1207
IGBT K 40 T 1202
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SC2716 TOSHIBA TRANSISTOR i SILICON NPN EPITAXIAL TYPE PCT PROCESS <;r i 7 1 fi U nit in mm HIGH FREQUENCY AM PLIFIER APPLICATIONS. AM HIGH FREQUENCY AM PLIFIER APPLICATIONS. + 0.5 3 .5 - Q 3 AM FREQUENCY CONVERTER APPLICATIOS. + 0.25 i.5-ai 5 f—
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2SC2716
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SA1362 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 13 6 2 LOW FREQUENCY POWER AMPLIFIER APPLICATIONS. POWER SWITCHING APPLICATIONS. U n it in mm + CL5 3 .5 - 0 .3 : + 0.85 • H igh D C C u rren t G ain h ^ E —120—400 •
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2SA1362
-400m
961001EAA2'
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2SK211
Abstract: 2SK211Y 2SK211GR 2L2 marking
Text: TOSHIBA 2SK211 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK211 Unit in mm FM TUNER APPLICATIONS. + 0.5 2 .5 - 0 .3 + 0.2 5 1 .5 - Q l 5 VHF BAND AM PLIFIER APPLICATIONS. Low Noise Figure : NF = 2.5dB Typ. (f=100MHz) High Forward Transfer Admitance : |Yfs| = 9mS (Typ.)
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2SK211
100MHz)
SC-59
100MHz
2SK211
2SK211Y
2SK211GR
2L2 marking
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SC-59 marking c5d
Abstract: No abstract text available
Text: TOSHIBA 2SA1312 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS i <; a 1 w êêf m m • 31 1 m tr ■ AUDIO FREQUENCY LO W NOISE AM PLIFIER APPLICATIONS. Unit in mm • High Voltage : V q e q = —120V + 0.5 3.5-as • Excellent h pg Linearity
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2SA1312
--120V
2SC3324
SC-59 marking c5d
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SK362 TO S H IB A FIELD EFFECT TRANSISTOR SILICON N C HANN EL JUNCTION TYPE 2SK362 Unit in mm FOR A U D IO AMPLIFIER, A N A L O G SW ITCH, CONSTANT CURRENT A N D .5.1 MAX. IM PEDANCE CONVERTER APPLICATIONS • High Breakdown Voltage : VGD g = —50V
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2SK362
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Untitled
Abstract: No abstract text available
Text: T O S H IB A TF1205 TOSHIBA SOLID STATE IGBT GATE DRIVER MODULE TF1 20 5 Unit in mm TOSHIBA TF1205 is the IGBT gate driver designed for use with TOSHIBA Insulated Gate Bipolar Transistor Module and it includes the optical isolator and IGBT gate driver circuit. Using this driver, you can design high reliability
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TF1205
TF1205
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Untitled
Abstract: No abstract text available
Text: TOSHIBA { D I S C R E T E / O P T 0> 9097250 ¿Toshiba T O S H IB A ^ D IS C R E T E / O P T O 99D d ËT| 16894 T □ T 7 E S □ ODlbfiTM 1 | ~ D T -S S -l TOSHIBA FIELD EFFECT TRANSISTOR SEMICONDUCTOR Y T F 8 3 1 SILICON N CHANNEL MOS TYPE TECHNICAL DATA
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500nA
250uA
00A/us
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TCD101AC
Abstract: toshiba linear image sensor DS0026CN T-41-55 toshiba linear ccd photo transistor til 32 CCD-Sensor TOSHIBA Memory SN74LS04 ccd linear toshiba
Text: TOSHIBA -CLOGIC/flENOim T? » T | ci D cl 7a4f l OOCHSll 9097248 TOSHIBA LOGIC/MEMORY CCD IMAGE SENSOR CCD (Charge Coupled Device) — — 6 7C T Ç Q 1Û 1 A C T-41-55 0 9 5 11 The TCD101AC is a high resolution and h i g h s e nsitivity 1728 element linear
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D101AC
T-41-55
TCD101AC
15/im
TCD101AC
4D22E-C)
l5ftmX1788)
toshiba linear image sensor
DS0026CN
T-41-55
toshiba linear ccd
photo transistor til 32
CCD-Sensor
TOSHIBA Memory
SN74LS04
ccd linear toshiba
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Pnp transistor smd ba rn
Abstract: transistor marking code 12W SOT-23 smd transistor marking p69 TRANSISTOR SMD MARKING CODE s2a transistor smd bc rn TRANSISTOR SMD MARKING CODE bc ru 1ff TRANSISTOR SMD MARKING CODE smd transistor P2D Motorola transistor smd marking codes SMD TRANSISTOR MARKING P28
Text: ont«* fj= !IS iìC O Ii ú U C i o y G o ï p . TH t N t x ï G é n é r a t i o n o í s m d M D 9 D A T 9 9 and ap iablished jality system f A . the Resign and Manufactu ~ d iscrete ^SeTOiCbiSuct audit as been fu rnlis ishh^ALth th a t tj tJ j A » q u ire le n ts according tj
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Q9001-1994i
CMSH1-20ML
Pnp transistor smd ba rn
transistor marking code 12W SOT-23
smd transistor marking p69
TRANSISTOR SMD MARKING CODE s2a
transistor smd bc rn
TRANSISTOR SMD MARKING CODE bc ru
1ff TRANSISTOR SMD MARKING CODE
smd transistor P2D
Motorola transistor smd marking codes
SMD TRANSISTOR MARKING P28
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BA6805A
Abstract: kd 506 transistor VU peak hold square root amplifier BA6800A AC Voltage comparator circuit diagram audio peak level meter Transistor AC 188 VU meter transistor Transistor AC 141
Text: BA6800A BA6800AF BA6805A Fluorescent display tube level meter driver, 16-point x 2 channel, VU scale, bar display The BA6800A, BA6800AF, and BA6805A monolithic ICs are two-channel, 16-point, bar-type fluorescent level meter drivers. The grid output and duty cycle are 1/8.
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BA6800A
BA6800AF
BA6805A
16-point
BA6800A,
BA6800AF,
16-point,
DIP28
DD1343M
kd 506 transistor
VU peak hold
square root amplifier
AC Voltage comparator circuit diagram
audio peak level meter
Transistor AC 188
VU meter transistor
Transistor AC 141
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IC 7481 pin configuration
Abstract: No abstract text available
Text: MITSUBISHI MICROCOMPUTERS 7480/7481 GROUP .•;• « •:*. ••:•; ^ H P '* * 'i.' * « > * SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER DESCRIPTION PIN CONFIGURATION The 7480/7481 group is the single-chip microcomputer adopting the silicon gate CMOS process. In addition to its simple instruction
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16/SCLK^
KI-9711
GD37fi7fi
IC 7481 pin configuration
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