TRANSISTOR C 608 Search Results

TRANSISTOR C 608 Result Highlights (5)

Part	Manufacturer	Description
CA3082	Rochester Electronics LLC	CA3082 - Small Signal Bipolar Transistor
CA3081F	Rochester Electronics LLC	CA3081 - Small Signal Bipolar Transistor
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold

TRANSISTOR C 608 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
transistor NEC D 822 P Abstract: transistor number D 2498 702 mini transistor 2SC4226-T1 NEC D 822 P 2sc4226 2SC4226-T2 Text: DATA SHEET SILICON TRANSISTOR 2SC4226 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD D E S C R IP T IO N The 2SC4226 is a low supply voltage transistor designed for VHF, UHF low PA C K A G E D IM E N S IO N S in millimeters	OCR Scan	2SC4226 2SC4226 SC-70 2SC4226-T1 2SC4226-T2 transistor NEC D 822 P transistor number D 2498 702 mini transistor NEC D 822 P	PDF
609 transistor Abstract: No abstract text available Text: KSP17 NPN EPITAXIAL SILICON TRANSISTOR CATV TRANSISTOR TO-92 ABSOLUTE MAXIMUM RATINGS TA=25t: C h aracte ristic Collector-Base Voltage CoUector-Emitter Voltage Emitter-Base Voltage Collector Dissipation (Ta =25"C) Sy m b o l Rating U nit 20 15 3.0 625 V	OCR Scan	KSP17 100MHz 200MHz 609 transistor	PDF
matched pair JFET Abstract: N CHANNEL jfet Low Noise Audio Amplifier jfet differential transistor jfet having voltage gain 741 op-amp transistor jfet 741 opamp field effect transistors opamp 741 jfet idss 10 vp -6 Text: APPLICATION NOTES JFETS P R E C I S I O N I N E L E C T R O N I C S An introduction to Junction Field Effect Transistors JFETs The Junction Field Effect Transistor (JFET) exhibits characteristics which often make it more suited to a particular application than the bipolar transistor.	Original		PDF
D 1437 transistor Abstract: No abstract text available Text: DATA SHEET SILICON TRANSISTOR 2SC5004 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2 S C 5004 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in m illim e te rs OSC/M IX. It is suitable for a high density surface mount assembly since the	OCR Scan	2SC5004 D 1437 transistor	PDF
2N2222A 338 Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931 Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK	OCR Scan	2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931	PDF
KSP55 Abstract: KSP56 Text: KSP55/56 PNP EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR • Collector-Emitter Voltage: VCEo = KSPS5: 60V KSP56: 80V • Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Symbol Characteristic C ollector-B ase Voltage Rating Unit	OCR Scan	KSP55/56 KSP55: KSP56: 625mW KSP55 KSP56 00251lal KSP55 KSP56	PDF
Untitled Abstract: No abstract text available Text: . N AMER PHILIPS/DISCRETE 86D 01822 D DbE D bt.53131 DOlHObO □ 7" ~ 5 3 BLX93A A U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B or C with a supply voltage up to 28 V. The transistor is resistance stabilized and is guaranteed to withstand severe	OCR Scan	BLX93A tbS3T31	PDF
bfq34 application note Abstract: ON4497 BFQ34 sf 122 transistor Text: Philips Semiconductors h ^ 5 3 1 3 1 DD3 1 S5 Û G3 Ö • A P X ^ P r o d u c ts p e c ific a t i^ NPN 4 GHz wideband transistor BFQ34 N AriER P H I L I P S / D I S C R E T E fc.'JE » PINNING DESCRIPTION NPN transistor encapsulated in a 4 lead SOT 122A envelope with a	OCR Scan	DD31S5Ã BFQ34 OT122A ON4497) bfq34 application note ON4497 BFQ34 sf 122 transistor	PDF
BLX93A Abstract: BLX93 PCOT 01827 IEC134 transistor WC 2C TRANSISTOR G13 plw series capacitor TH90 Text: N AMER PHILIPS/DISCRETE _ 8 6 0 0 1 8 2 2 ObE D D ~T - • * 3 bbS3T31 G014Gb0 Ü “j ^ BLX93A U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B or C with a supply voltage up to 28 V. The transistor is resistance stabilized and Is guaranteed to withstand severe	OCR Scan	BLX93A BLX93A BLX93 PCOT 01827 IEC134 transistor WC 2C TRANSISTOR G13 plw series capacitor TH90	PDF
IR2E27A Abstract: Sharp IR2E02 IR2E01 IR2E25 Sharp IR2E27A IR2E02 IR2E27A SHARP LED ir2e01 ir2e09 IR2E28 Text: Product Lineup Product Lineup • Transistor Arrays 'S H A R P 4 Product Lineup SHARP 5 Product Lineup ■ Special Function Transistor Arrayys F u nc ti o n Mo del No. O utput v o lt a g e 1mA V) 400 12 -c irc u it P rinte r D river and IR 2402 1 - c i r c u i t R ib b o n Shif t D r i v e r	OCR Scan	24DIP/24SOP IR2C10 IR2E34 IR2E27A Sharp IR2E02 IR2E01 IR2E25 Sharp IR2E27A IR2E02 IR2E27A SHARP LED ir2e01 ir2e09 IR2E28	PDF
Untitled Abstract: No abstract text available Text: SAMSUNG S EM I C ON D UC T OR I NC MPS8098 14E D jT 'ib M m a 0007337 M \| NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR • Collector-Emitter Vbitage: Vcto=60V • Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic	OCR Scan	MPS8098 625mW	PDF
Untitled Abstract: No abstract text available Text: Part Number: Integra IB0912M500 TECHNOLOGIES, INC. L-Band TACAN Transistor Silicon Bipolar − Ultra-high fT The high power pulsed transistor device part number IB0912M500 is designed for systems operating over the instantaneous bandwidth of 960-1215 MHz. While operating in class C mode under TACAN pulsing	Original	IB0912M500 IB0912M500 IB0912M500-REV-NC-DS-REV-B	PDF
transistor vergleichsliste Abstract: OC44 AD149 ASZ16 siemens transistor asy 27 AF124 ASZ15 GD241 transistor gc301 AC125F Text: TRANSISTOR VERGLEICHSLISTE Teil 1: G erm anium transistoren ra d io -television T ran sistorvergleichsliste T eil 1 : G erm anium transistoren TRANSISTOR V E R G L E I C H S LI S T E T eil 1: G erin an iu u itran sisto ren M IL IT Ä R V E R L A G D E R D E U T S C H E N D E M O K R A T IS C H E N	OCR Scan		PDF
ld18a Abstract: transistor tc 144 Text: May 1994 P A IR C H II-D M IC D N D U C T Q R tm NDP608A / NDP608AE / NDP608B / NDP608BE NDB608A / NDB608AE / NDB608B / NDB608BE N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-channel enhancement mode power field effect transistors are produced using Fairchild's	OCR Scan	NDP608A NDP608AE NDP608B NDP608BE NDB608A NDB608AE NDB608B NDB608BE NDP608 ld18a transistor tc 144	PDF

AN-994 Abstract: C-150 HF03D060ACE Text: PD - 95645B IRGB8B60KPbF IRGS8B60KPbF IRGSL8B60KPbF INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • VCES = 600V C Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.	Original	95645B IRGB8B60KPbF IRGS8B60KPbF IRGSL8B60KPbF O-220AB O-262 IRGB8B60KPbF IRGS8B60KPbF AN-994. AN-994 C-150 HF03D060ACE	PDF
BUK856-450IX Abstract: zener diode f7 T0220AB BUK856 transistor r 606 j Text: N AUER P H I L I P S / D I S C R E T E bTE D • bbSBiai 0030111 633 * A P X Philips _ Product Specification Insulated Gate Bipolar Transistor BUK856-450IX Protected IGBT _	OCR Scan	0D3CH11 BUK856-450IX T0220AB BUK856-450IX zener diode f7 BUK856 transistor r 606 j	PDF
AN-994 Abstract: C-150 IRGS8B60K IRGSL8B60K Text: PD - 95645A IRGB8B60KPbF IRGS8B60KPbF IRGSL8B60KPbF INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • C Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Lead-Free.	Original	5645A IRGB8B60KPbF IRGS8B60KPbF IRGSL8B60KPbF O-220AB IRGB8B60KPbF IRGS8B60K O-262 IRGSL8B60K AN-994. AN-994 C-150 IRGS8B60K IRGSL8B60K	PDF
AN-994 Abstract: C-150 IRGS8B60K IRGSL8B60K Mbl transistor Text: PD - 95645A IRGB8B60KPbF IRGS8B60KPbF IRGSL8B60KPbF INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • C Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Lead-Free.	Original	5645A IRGB8B60KPbF IRGS8B60KPbF IRGSL8B60KPbF O-220AB IRGB8B60KPbF IRGS8B60K O-262 IRGSL8B60K O-220AB AN-994 C-150 IRGS8B60K IRGSL8B60K Mbl transistor	PDF
Untitled Abstract: No abstract text available Text: PD - 95645B IRGB8B60KPbF IRGS8B60KPbF IRGSL8B60KPbF INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • C Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Lead-Free.	Original	95645B IRGB8B60KPbF IRGS8B60KPbF IRGSL8B60KPbF O-220AB O-262 IRGB8B60KPbF IRGS8B60KPbF AN-994.	PDF
C-150 Abstract: IRGS8B60K IRGSL8B60K Text: PD - 95645A IRGB8B60KPbF IRGS8B60KPbF IRGSL8B60KPbF INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • C Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Lead-Free.	Original	5645A IRGB8B60KPbF IRGS8B60KPbF IRGSL8B60KPbF O-220AB IRGB8B60KPbF IRGS8B60K O-262 IRGSL8B60K IRGB/S/SL8B60KPbF C-150 IRGS8B60K IRGSL8B60K	PDF
10B10T Abstract: No abstract text available Text: KSC2330A NPN EPITAXIAL SILICON TRANSISTOR COLOR TV CHROMA OUTPUT T O -92 L • Col lector-Base Voltage V Cb o = 4 0 0 V • C urrent G ain-Bandw idth Product fj= 5 0 M h z TYP ABSOLUTE MAXIMUM RATINGS (TA=25°C) C haracteristic Sym bol Col lector-Base Voltage	OCR Scan	KSC2330A 10B10T	PDF
transistor marking 2d ghz Abstract: BFG41OW Text: DISC RETE S E M IC O N D U C TO R S BFG410W NPN 22 GHz wideband transistor Product specification Supersedes data of 1997 Oct 29 File under Discrete Semiconductors, SC14 Philips Semiconductors 1998 Mar 11 PHILIPS PHILIPS Philips S e m ico nd uctors P ro d u c t specification	OCR Scan	BFG410W 125104/00/04/pp12 transistor marking 2d ghz BFG41OW	PDF
transistor c828 Abstract: c828 npn transistor C828 transistor free C828 c828 npn NPN transistor c828 hfe c828 npn c828 C828 transistor c828 power rating Text: 112 O p to iso lato rs A* * W A, ~ PAC K A G E PRODUCT KEY OUTPUT FO RM AT TRAN SISTOR TRAN SISTOR TRAN SISTOR TRAN SISTOR TRAN SISTO R TRAN SISTOR TRAN SISTOR MCT2 MCT2E MCT210 MCT26 MCT4 MCT4R* MCT6 A A A A C C B TRANSISTOR MCT66 B TRAN SISTOR TRAN SISTOR	OCR Scan	MCT210 MCT26 MCT66 transistor c828 c828 npn transistor C828 transistor free C828 c828 npn NPN transistor c828 hfe c828 npn c828 C828 transistor c828 power rating	PDF
Untitled Abstract: No abstract text available Text: PD - 94545 IRGB8B60K IRGS8B60K IRGSL8B60K INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.	Original	IRGB8B60K IRGS8B60K IRGSL8B60K O-220AB O-262 O-220AB AN-994.	PDF

TRANSISTOR C 608 Search Results

TRANSISTOR C 608 Result Highlights (5)

TRANSISTOR C 608 Datasheets Context Search

transistor NEC D 822 P

609 transistor

matched pair JFET

D 1437 transistor

2N2222A 338

KSP55

Untitled

bfq34 application note

BLX93A

IR2E27A

Untitled

Untitled

transistor vergleichsliste

ld18a

AN-994

BUK856-450IX

AN-994

AN-994

Untitled

C-150

10B10T

transistor marking 2d ghz

transistor c828

Untitled