Untitled
Abstract: No abstract text available
Text: "ri TOSHIBA O I S C R E T E / O P T O } DE I ^ D ^ E S G GOlbfiSb 9097250 TOSHIBA DISCRETE/OPTO TOSHIBA ^aSììbn SEMICONDUCTOR FIELD EFFECT TRANSISTOR Y T F 6 1 2 S I L I C O N -N C H A N N E L TECHNICAL DATA MOS TYPE (TT-MOSII) INDUSTRIAL APPLICATIONS
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500nA
250uA
00A/us
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Untitled
Abstract: No abstract text available
Text: TOSHIBA {DISCRETE/OPTO} Tí » e I^DITESD DOlhflSS 7 9097250 TOSHIBA <DISCRETE/OPTO> 99D 16852 D T -tf- of SEMICONDUCTOR TOSHIBA FIELD EFFECT TRANSISTOR Y T E 6 1 0 SILICON TECHNICAL DATA N C H A N N E L M OS T Y P E TT-MOSI INDUSTRIAL APPLICATIONS Unit in mm
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Untitled
Abstract: No abstract text available
Text: TT T O S H I B A -CDISCRETE/OPTOÏ 9 0 9 7 2 5 0 T O S H IB A 99D 1 6 8 5 8 D IS C R E T E / O P T O TOSHIBA SEMICONDUCTOR ¿/ashihi D eT I t D T V E S O DOlbflSfl fi I~~ D T ^ -O S FIELD EFFECT TRANSISTOR Y T F 6 1 3 S I L I C O N N C H A N N E L M O S -TYPE
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500nA
250pA
00A/ys
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iw 1688
Abstract: 2sa835 2SA837 2SA843 2SA839 2SC1661 55AF2 SC15010
Text: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English
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100Hz)
2SA843
220MHz,
iw 1688
2sa835
2SA837
2SA839
2SC1661
55AF2
SC15010
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c 1685 transistor
Abstract: 1685 transistor transistor c 1685 1615mhz PH1617-60
Text: Wireless Power Transistor, 60 Watts, 1615 - 1685 MHz PH1617-60 PH1617-60 Wireless Power Transistor 60 Watts, 1615 - 1685 MHz 1 Features • • • • • • Outline Drawing NPN Silicon Microwave Power Transistor Common Emitter Configuration Diffused Emitter Ballasting Resistors
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PH1617-60
PH1617-60
1615MHz
1685MHz
c 1685 transistor
1685 transistor
transistor c 1685
1615mhz
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UU15
Abstract: tic 260 PH1617-60 "Power TRANSISTOR"
Text: PH1617-60 M/A-OOM Wireless Power Transistor 60 Watts, 1615- 1685 MHz = & Microwave Products Outline Drawing1 Description M/A-COM’s PH1617-60 is a silicon bipolar NPN transistor intended for use as a common emitter class AB stage in power amplifiers that operate in the 1615 to 1685 MHz range. This
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PH1617-60
PH1617-60
TT50M5QA
11Bt-
1685MHz
1615MHz
1685MHz
UU15
tic 260
"Power TRANSISTOR"
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transistor Common emitter configuration
Abstract: PH1617-60
Text: PH1617-60 Wireless Power Transistor 60W, 1615-1685 MHz M/A-COM Products Released, 05 Sep 07 Package Outline Features • • • • • • • NPN Silicon microwave power transistor Common emitter configuration Diffused emitter ballasting resistors Gold metallization system
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PH1617-60
-28dBc
transistor Common emitter configuration
PH1617-60
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Untitled
Abstract: No abstract text available
Text: PH1617-60 Wireless Power Transistor 60W, 1615-1685 MHz M/A-COM Products Released, 05 Sep 07 Package Outline Features • • • • • • • NPN Silicon microwave power transistor Common emitter configuration Diffused emitter ballasting resistors Gold metallization system
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PH1617-60
-28dBc
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FX3U-48M
Abstract: FX3U-32M a6tbxy36 FX3U-64M FX2N 64mr manual FX3U-80M pid temprature controller FX2N-16EX JY997D16901 FX3U-128M
Text: MITSUBISHI ELECTRIC MELSEC FX Series Programmable Logic Controllers User's Manual Hardware FX3U Base Units and Extension Blocks Art. no: 168590 01062007 Version E MITSUBISHI ELECTRIC INDUSTRIAL AUTOMATION Safety Precautions (Read these precautions before use.)
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D-40880
168590-E
FX3U-48M
FX3U-32M
a6tbxy36
FX3U-64M
FX2N 64mr manual
FX3U-80M
pid temprature controller
FX2N-16EX
JY997D16901
FX3U-128M
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Untitled
Abstract: No abstract text available
Text: TOSHIBA {DISCRETE/OPTO} Tí D eT I t D ^ S G 990 16850 9097250 TOSHIBA DISCRETE/OPTO ^/oihlha üDlbñSG 3 D 1-39-13 TOSHIBA FIELD EFFECT TRANSISTOR SEMICONDUCTOR Y T F 5 4 3 SILICON N CHANNEL MOS TYPE TECHNICAL DATA (ff-MOSIT) INDUSTRIAL APPLICATIONS Unit in mm
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500nA
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Untitled
Abstract: No abstract text available
Text: TOSHIBA {DISCRETE/OPTO} "H 990 16854 9097250 TOSHIBA <DISCRETE/OPTO> ^ashiht SEMICONDUCTOR D E I •=!DT 72 SD OGlbflS4 D f D T ^ S - cR TOSHIBA FIELD EFFECT TRANSISTOR Y T F 6 l'l SILICON N CHANNEL MOS TYPE TECHNICAL DATA 7T-M0SE INDUSTRIAL APPLICATIONS
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500nA
250uA
250us|
00A/us
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2SC366
Abstract: 2SA1423 SC36
Text: Ordering number: EN 1685A 2SA1423/2SC3656 i SAßiYO PNP/ NPN Epitaxial Planar SiliconTransistors i Switching Applications with Bias Resistor Use . Switching circuit, inverter circuit, interface circuit, driver circuit Features . With bias resistor (R1 =10ki2 ,R2=10kfl ).
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l685A
2SA1423/2SC3656
10kii
2SA1423
2034/2034A
SC-43
7tlt17D7b
2SC366
SC36
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Untitled
Abstract: No abstract text available
Text: Ordering number: EN 1685A 2SA1423/2SC3656 i SAßiYO PNP/ NPN Epitaxial Planar SiliconTransistors i Switching Applications with Bias Resistor Use . Switching circuit, inverter circuit, interface circuit, driver circuit Features . With bias resistor (R1 =10ki2 ,R2=10kfl ).
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2SA1423/2SC3656
10ki2
10kfl
2SA1423
Col----14
SC-51
rO-92
3C-43
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TDA 16822
Abstract: 04N60C3 equivalent ICE1QS01 equivalent tda 3050 tda 1040 TDA 16846 TDA 16888 1QS01 07N60C3 mosfet transistor 04n60c3
Text: ICs: SMPS, CoolSET TM TM – D i s c r e t e s : C o o l M O S , I G B T, t h i n Q ! Pow e r Ma n a g e m e n t & Su p p l y : : AC / D C Se l e c t i o n Gu i d e www.infineon.com/power Never stop thinking. TM Introduction TODAY’S MODERN LIFE style leads to a fast growing energy requirement as
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B152-H8202-X-X-7600
TDA 16822
04N60C3 equivalent
ICE1QS01 equivalent
tda 3050
tda 1040
TDA 16846
TDA 16888
1QS01
07N60C3 mosfet transistor
04n60c3
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PCF7931AS
Abstract: PCF7935AS PCF79730S-3851 PCF7931 PCF7935 PCF7931XP/C PCF79730S pcf79735S PHILIPS PCF7935AS TDA4859ps
Text: Philips Semiconductors Product Discontinuations Notice DN44 December 31, 2000 SEE DN44 NOTICE LETTER FOR APPLICABLE TERMS, CONDITIONS AND CODE DEFINITIONS FOR THESE DISCONTINUED PRODUCTS. REFER TO PHILIPS WEB-SITE "http://www.semiconductors.philips.com/eol" FOR ADDED INFORMATION.
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87C528
X3A-KTY181/1
X3A-OH155
PCF7931AS
PCF7935AS
PCF79730S-3851
PCF7931
PCF7935
PCF7931XP/C
PCF79730S
pcf79735S
PHILIPS PCF7935AS
TDA4859ps
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irfp460 dc welding circuit diagram
Abstract: irfp450 mosfet full bridge ZVT Full bridge transformer IGBT IGBT ZVT Full bridge lossless passive clamp flyback converter ZVT full bridge for welding irfp450 mosfet full bridge pwm 47N60S5 AN-CoolMOS-02 siemens rectifier pwm igbt
Text: Version 1.1 , June 2000 Application Note AN-CoolMOS-02 CoolMOS Selection Guide Author: Ilia Zverev, Jon Hancock Published by Infineon Technologies AG http://www.infineon.com Power Conversion N e v e r s t o p t h i n k i n g CoolMOS Selection Guide This selection guide shows the main application fields of CoolMOS transistors, answers
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AN-CoolMOS-02
Room14J1
Room1101
irfp460 dc welding circuit diagram
irfp450 mosfet full bridge
ZVT Full bridge transformer IGBT
IGBT ZVT Full bridge
lossless passive clamp flyback converter
ZVT full bridge for welding
irfp450 mosfet full bridge pwm
47N60S5
AN-CoolMOS-02
siemens rectifier pwm igbt
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two transistor forward
Abstract: siemens RC snubber smps transformer Design half bridge smps transformer design full bridge smps basic PUSHPULL CONVERTER TRANSFORMER DESIGN NOTES Single phase half wave bridge converter 24 volt output smps design AN-CoolMOS-02 resonant single ended forward converter
Text: Version 1.0 , June 2000 Application Note AN-CoolMOS-08 SMPS Topologies Overview Author: Jon Hancock Published by Infineon Technologies AG http://www.infineon.com Power Conversion N e v e r s t o p t h i n k i n g SMPS Topologies Overview This application note gives a briefly overview of major state of the art SMPS topologies.
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AN-CoolMOS-08
Room14J1
Room1101
two transistor forward
siemens RC snubber
smps transformer Design
half bridge smps transformer design
full bridge smps basic
PUSHPULL CONVERTER TRANSFORMER DESIGN NOTES
Single phase half wave bridge converter
24 volt output smps design
AN-CoolMOS-02
resonant single ended forward converter
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B81121 X2 mkt
Abstract: B81121 X2 mkp AN-TDA16888-0-010323 ELKO capacitors MKT .22K 250V X2 EPCOS 230 00 O ELKO CAPACITOR 63v 2,2 elko capacitor TDA 16888 B81121 X2
Text: Version 1.1 , March 2001 Application Note AN-TDA16888-0-010323 TDA 16888: Multioutput Single Transistor Forward Converter 150W / 100kHz Author: Michael Herfurth Published by Infineon Technologies AG http://www.infineon.com Power Management & Supply N e v e r
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AN-TDA16888-0-010323
100kHz
V/18A;
-12V/1A;
V/100mA
Room14J1
Room1101
B81121 X2 mkt
B81121 X2 mkp
AN-TDA16888-0-010323
ELKO capacitors
MKT .22K 250V X2
EPCOS 230 00 O
ELKO CAPACITOR 63v 2,2
elko capacitor
TDA 16888
B81121 X2
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET FEATURES • • • • • • PHP130N03LT, PHB130N03LT SYMBOL ’Trench’ technology Very low on-state resistance Fast switching Stable off-state characteristics High thermal cycling performance
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PHP130N03LT,
PHB130N03LT
PHP130N03LT
T0220AB)
PHP130NQ3LT,
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TDA16850
Abstract: tda 1170 ic OPTO tl 431 A928 TDA 1030 pin diagram of ic 2732
Text: TDA 16850 Preliminary Data SMPS Controller for CRT Monitors 1 Overview 1.1 Features – Controller for Flyback Topology – Current mode PWM with shunt resistor and spike blanking – Leading edge triggered pulse width modulation – Fast, soft switching totem pole gate drive 1 A
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SVI 3104 c
Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
Text: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or
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AN83301-1
NE24615
AN83302
AN83303-1
NE71083
NE70083
AN83901
AN85301
11/86-LN
AN86104
SVI 3104 c
UPC1678G
ne333
stb 1277 TRANSISTOR equivalent
transistor bf 175
NE85635 packaging schematic
NE72000 VC
svi 3104
NE9000
NE720
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mmic a08
Abstract: t06 TRANSISTOR transistor t06 B584B B585B 544 mmic uPC1675 mmic prescaler divide by 64 UPC1668B UPC1678B
Text: Silicon MMIC Selection Guide WIDEBAND AMPLIFIERS ELECTRICAL C K M K T E m m C S 'M a O M Hz. i- ' « M l» ICC V (mA) NF (dB) Rim Gain (dB) (dB) RL oot PSAT (dB) (dBm) ISOL (dB) m tm m m n * m m MIN TYP MAX TYP MIN TYP MAX TYP TYP TYP TYP Ca* 25 5.5 16 18
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telefunken ta 400
Abstract: but46 sot-23 npn marking code cr
Text: I TELEFUNKEN ELECTRONIC 17E T> m fi^GCHb 0001513 BUT 46 - BUT 46 A •¡nULHFlItilKdMelectronic CrwtfveTKhft0t09«$ r - 2 3 - 1 3 Silicon NPN Power Switching Transistors Applications: Switching mode power supply, electronic ballast and driver circuits with
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15A3DIN
E--07
telefunken ta 400
but46
sot-23 npn marking code cr
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4435a
Abstract: 4435 4435 transistor F 4435a 4435 m sanyo CG LC587004 LC587006 LC587008 QFP80
Text: Ordering number : EN*4435A CMOS LSI LC587008, 587006, 587004 Single-Chip 4-Bit Microprocessors with LCD Driver, 2 Kb RAM, and 8, 12, or 16 KB ROM on chip Preliminary Overview The LC587004, LC587006 and LC587008 are 80-pin lowvoltage CMOS 4-bit microprocessors that include LCD
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LC587008,
LC587004,
LC587006
LC587008
80-pin
LC5870
4435a
4435
4435 transistor
F 4435a
4435 m
sanyo CG
LC587004
QFP80
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