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    Rochester Electronics LLC 2SC3661-TB-E

    NPN SILICON TRANSISTOR
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    DigiKey 2SC3661-TB-E Bulk 601,000 1,567
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    2SC3661-TB-E Bulk 39,000 1,567
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    Rochester Electronics LLC 2SC3661-U-TB-E

    BIP NPN 0.3A 25V
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    DigiKey 2SC3661-U-TB-E Bulk 27,000 5,323
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    Toshiba America Electronic Components 2SC3668-Y,T2F(M

    TRANS NPN 50V 2A MSTM
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    Toshiba America Electronic Components 2SC3665-Y,T2F(J

    TRANS NPN 120V 0.8A MSTM
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    Toshiba America Electronic Components 2SC3668-Y,T2F(J

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    2SC366 Datasheets (136)

    Part
    ECAD Model
    Manufacturer
    Description
    Curated
    Datasheet Type
    PDF
    2SC366 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SC366 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC366 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC366 Unknown Cross Reference Datasheet Scan PDF
    2SC366 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC366 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SC366 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SC366 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SC366 Unknown Discontinued Transistor Data Book 1975 Scan PDF
    2SC3660 NEC Semiconductor Selection Guide 1995 Original PDF
    2SC3660 Great American Electronics Silicon NPN high power UHF transistor Scan PDF
    2SC3660 Unknown High Frequency Device Data Book (Japanese) Scan PDF
    2SC3660 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SC3660A NEC Semiconductor Selection Guide 1995 Original PDF
    2SC3660A Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SC3660A Unknown High Frequency Device Data Book (Japanese) Scan PDF
    2SC3661 Kexin NPN Epitaxial Planar Silicon Transistor Original PDF
    2SC3661 Sanyo Semiconductor High-gain, muting circuit Original PDF
    2SC3661 Unknown General Purpose Transistors Scan PDF
    2SC3661 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    ...

    2SC366 Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3666 AUDIO POWER AMPLIFIER APPLICATIONS. • High DC Current Gain: MAXIMUM RATINGS Unit in mm hpE=100~320 (Ta=25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage v CBO 30 V Collector-Emitter Voltage VCEO


    OCR Scan     		2SC3666 100mA 800mA 800mA, PDF

    2-7D101A

    Abstract: 2SA1426 2SC3666 A1426 v30010
    Text: 2SA1426 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1426 Audio Power Amplifier Applications • High hFE: hFE = 100 to 320 • 1-W output applications • Complementary to 2SC3666. Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics


    Original     		2SA1426 2SC3666. 2-7D101A 2SA1426 2SC3666 A1426 v30010 PDF

    c3665

    Abstract: 2SC3665 2-7D101A 2SA1425
    Text: 2SC3665 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC3665 ○ 電力増幅用 ○ 励振段増幅用 • 単位: mm 2SA1425 とコンプリメンタリになります。 絶対最大定格 (Ta = 25°C) 項 目 記 号 定


    Original     		2SC3665 2SA1425 2-7D101A 20070701-JA c3665 2SC3665 2-7D101A 2SA1425 PDF

    2-7D101A

    Abstract: 2SA1425 2SC3665 A1425
    Text: 2SA1425 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1425 Power Amplifier Applications Driver-Stage Amplifier Applications • Unit: mm Complementary to 2SC3665. Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage


    Original     		2SA1425 2SC3665. 2-7D101A 2SA1425 2SC3665 A1425 PDF

    c3666

    Abstract: 2SC3666 2-7D101A
    Text: 2SC3666 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3666 Audio Power Amplifier Applications • High DC current gain: hFE (1) = 100 to 320 • High power dissipation: PC = 1000 mW Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics


    Original     		2SC3666 c3666 2SC3666 2-7D101A PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SA1426 TOSHIBA 2SA1426 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO POWER AMPLIFIER APPLICATIONS. • • • High hpE : hjrE = 100~320 IW Output Applications. Complementary to 2SC3666. 7 .1 MAX MAXIMUM RATINGS (Ta = 25°C)


    OCR Scan     		2SA1426 2SC3666. PDF

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA 2SC3665 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3665 Unit in mm AUDIO PO W ER AM PLIFIER APPLICATIONS DRIVER STAGE AM PLIFIER APPLICATIONS 7.1 M A X • Complementary to 2SA1425. M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC


    OCR Scan     		2SC3665 2SA1425. PDF

    Untitled

    Abstract: No abstract text available
    Text: T O S H IB A 2SC3669 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3669 PO W ER AM PLIFIER APPLICATIONS Unit in mm PO W ER SWITCHING APPLICATIONS • • • Low Saturation Voltage : V q e (sat) = 0-5V(Max.) High Speed Switching Time : tstg = 1.0,«s (Typ.)


    OCR Scan     		2SC3669 2SA1429 PDF

    2SD2334

    Abstract: 2sc4814 2SD2076 2216y 2SD1546 2sd2190 2SD1930 2SD1755 2sc2562 2SC4062
    Text: - m. £ € Manuf. T y p e No. 2 SD 2174 fâ 2SD 2175 □— A 2SD 2176 - # h SANYO T 2SC4488 M 3E TO S H I B A m B NEC 2SC3677 2SD1593 2SC3665 2SD1312 B HITACHI ÎL * ± a FU JITSU tö T MATSUS H I T A z m MITSUBISHI T 2SD 2185 fe' T 2S0 2186 □— A 2SD 2187


    OCR Scan     		2SD2174 2SD2175 2SD2176 2SD2177 2SD2185 2SD2186 2SD2187 2SD2188 2SD2189 2SD2190 2SD2334 2sc4814 2SD2076 2216y 2SD1546 2SD1930 2SD1755 2sc2562 2SC4062 PDF

    rca 2n2147

    Abstract: 2N2207 2n2183 rca 2N2196 2N2214 2N2161 2N2222A motorola 2N2204 2n2162 2N2200
    Text: LOW-POWER SILICON NPN Item Number Part Number V BR CEO 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 714 BFX69A BFX69A 2N1594 BCW94A 2SC366G 2N1644A 2N2192 2N2192A 2N2192B MPS650 CX904 CX904 2SC943 2SC943 2SC943 KT503B BCW90B BCW90B 2N731 Manufacturer


    Original     		BFX69A 2N1594 BCW94A 2SC366G 2N1644A 2N2192 2N2192A 2N2192B MPS650 rca 2n2147 2N2207 2n2183 rca 2N2196 2N2214 2N2161 2N2222A motorola 2N2204 2n2162 2N2200 PDF

    Untitled

    Abstract: No abstract text available
    Text: UTC 2SC3669 NPN EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS FEATURES *Low saturation voltage VCE sat = 0.5V(Max) *High speed switching time: tstg=1.0 S(Typ.) 1 TO-252 1:BASE 2:COLLECTOR 3: EMITTER ABSOLUTE MAXIMUM RATINGS ( Ta=25°C)


    Original     		2SC3669 O-252 QW-R209-015 PDF

    c3666

    Abstract: 2-7D101A 2SC3666
    Text: 2SC3666 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3666 Audio Power Amplifier Applications • High DC current gain: hFE (1) = 100 to 320 • High power dissipation: PC = 1000 mW Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Symbol


    Original     		2SC3666 c3666 2-7D101A 2SC3666 PDF

    2-7D101A

    Abstract: 2SA1428 2SC3668
    Text: TO SH IBA 2SC3668 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3668 Unit in mm POWER SWITCHING APPLICATIONS 7.1 M A X • • • Low Saturation Voltage : V c e (sat)“ 0.5V (Max.) High Speed Switching Time : tgtg^l.O/^siTyp.)


    OCR Scan     		2SC3668 2SA1428. 2-7D101A 2-7D101A 2SA1428 2SC3668 PDF

    2-7D101A

    Abstract: 2SA1425 2SC3665 toshiba nq
    Text: TO SH IBA 2SC3665 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3665 Unit in mm AUDIO POWER AMPLIFIER APPLICATIONS DRIVER STAGE AMPLIFIER APPLICATIONS 7.1 MAX • Complementary to 2SA1425. MAXIMUM RATINGS (Ta = 25°C) SYMBOL CHARACTERISTIC


    OCR Scan     		2SC3665 2SA1425. 2-7D101A 2SA1425 2SC3665 toshiba nq PDF

    2SC3661

    Abstract: MARKING FY VEBO-15V N209 Low frequency general-purpose amplifiers,
    Text: Ordering number:EN1854A NPN Epitaxial Planar Silicon Transistor 2SC3661 High hFE, Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions • Low frequency general-purpose amplifiers, drivers, muting circuit. unit:mm 2018A [2SC3661]


    Original     		EN1854A 2SC3661 2SC3661] 2SC3661-used VEBO15V) 2SC3661 MARKING FY VEBO-15V N209 Low frequency general-purpose amplifiers, PDF

    2SC3669

    Abstract: 2-7D101A 2SA1429
    Text: TO SH IBA 2SC3669 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3669 Unit in mm POWER SWITCHING APPLICATIONS • • • Low Saturation Voltage : V c e (sat)“ 0.5V (Max.) High Speed Switching Time : tgtg^l.O/^siTyp.)


    OCR Scan     		2SC3669 2SA1429 2-7D101A 20truments, 2SC3669 2-7D101A 2SA1429 PDF

    C3665 transistor

    Abstract: c3665 2SC3665 2-7D101A 2SA1425
    Text: 2SC3665 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3665 Audio Power Amplifier Applications Driver-Stage Amplifier Applications • Unit: mm Complementary to 2SA1425. Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit


    Original     		2SC3665 2SA1425. C3665 transistor c3665 2SC3665 2-7D101A 2SA1425 PDF

    C3666

    Abstract: 2-7D101A 2SC3666
    Text: 2SC3666 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC3666 ○ 低周波電力増幅用 単位: mm • 直流電流増幅率が高い。 • 許容コレクタ損失が大きい。 : PC = 1000 mW : hFE(1) = 100~320 絶対最大定格 (Ta = 25°C)


    Original     		2SC3666 2-7D101A C3666 2-7D101A 2SC3666 PDF

    common collector applications

    Abstract: 2SC3669
    Text: UTC 2SC3669 NPN EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS FEATURES *Low saturation voltage VCE sat = 0.5V(Max) *High speed switching time: tstg=1.0 S(Typ.) 1 TO-252 1:BASE 2:COLLECTOR 3: EMITTER ABSOLUTE MAXIMUM RATINGS ( Ta=25°C)


    Original     		2SC3669 O-252 QW-R209-015 common collector applications 2SC3669 PDF

    2SC3660

    Abstract: rf amplifier 100w linear amplifier 470-860 transistor npn 100w amplifier TRANSISTOR 246
    Text: GAE GREAT AMERICAN ELECTROINCS 2SC3660 Silicon NPN high power UHF transistor 2SC3660 is designed for Class AB Push­ Pull linear power amplifier applications in a common emitter configuration specifically in operating TV transmitters . Output Power: Frequency Range:


    OCR Scan     		2SC3660 2SC3660 G000D31 rf amplifier 100w linear amplifier 470-860 transistor npn 100w amplifier TRANSISTOR 246 PDF

    2-7D101A

    Abstract: 2SC3666
    Text: TO SH IBA 2SC3666 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3666 Unit in mm AUDIO POWER AMPLIFIER APPLICATIONS • High DC Current Gain : hpE (l) = 100~320 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage Colleetor-Emitter Voltage


    OCR Scan     		2SC3666 2-7D101A 2SC3666 PDF

    2-7D101A

    Abstract: 2SA1425 2SC3665
    Text: TO SH IBA 2SC3665 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3665 Unit in mm AUDIO POWER AMPLIFIER APPLICATIONS DRIVER STAGE AMPLIFIER APPLICATIONS 7.1 MAX • Complementary to 2SA1425. MAXIMUM RATINGS (Ta = 25°C) SYMBOL CHARACTERISTIC


    OCR Scan     		2SC3665 2SA1425. 2-7D101A 2SA1425 2SC3665 PDF

    transistor npn 100w amplifier

    Abstract: 2SC3660 rf power amplifier 100w 470-860 rf amplifier 100w npn 28v 100w amplifier
    Text: GAE GREAT AMERICAN ELECTROINCS 2SC3660 Silicon NPN high power UHF transistor 2SC3660 is designed for Class AB Push­ Pull linear power amplifier applications in a common emitter configuration specifically in operating TV transmitters . Output Power: Frequency Range:


    OCR Scan     		2SC3660 G000D31 transistor npn 100w amplifier rf power amplifier 100w 470-860 rf amplifier 100w npn 28v 100w amplifier PDF

    C3669

    Abstract: 2SC3669 2-7D101A 2SA1429
    Text: 2SC3669 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC3669 ○ 電力増幅用 ○ 電力スイッチング用 単位: mm • コレクタ飽和電圧が低い。 : VCE (sat) = 0.5 V (最大) (IC = 1 A) • スイッチング時間が速い。 : tstg = 1.0 s (標準)


    Original     		2SC3669 2SA1429 2-7D101A 20070701-JA C3669 2SC3669 2-7D101A 2SA1429 PDF