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    TRANSISTOR BUK455 Search Results

    TRANSISTOR BUK455 Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR BUK455 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BUK445-60H

    Abstract: BUK455-60H BUK475-60H
    Text: Philips Semiconductors Product specification PowerMOS transistor Isolated version of BUK455-60H GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Automotive applications, Switched Mode Power


    Original
    PDF BUK455-60H OT186A BUK475-60H BUK445-60H BUK455-60H BUK475-60H

    BUK455-100A

    Abstract: BUK445-100A BUK475 BUK475-100A BUK475-100B
    Text: Philips Semiconductors Product specification PowerMOS transistor Isolated version of BUK455-100A/B GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies SMPS ,


    Original
    PDF BUK455-100A/B OT186A BUK475-100A/B BUK475 -100A -100B BUK455-100A BUK445-100A BUK475 BUK475-100A BUK475-100B

    BUK445-200A

    Abstract: BUK475 BUK475-200A BUK475-200B
    Text: Philips Semiconductors Product specification PowerMOS transistor Isolated version of BUK455-200A/B GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies SMPS ,


    Original
    PDF BUK455-200A/B OT186A BUK475-200A/B BUK475 -200A -200B BUK445-200A BUK475 BUK475-200A BUK475-200B

    BUK455-50A

    Abstract: BUK445-60 BUK475 BUK475-60A BUK475-60B buk445 60
    Text: Philips Semiconductors Product specification PowerMOS transistor Isolated version of BUK455-60A/B GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies SMPS ,


    Original
    PDF BUK455-60A/B OT186A BUK475-60A/B BUK475 BUK455-50A BUK445-60 BUK475 BUK475-60A BUK475-60B buk445 60

    BUK455-400B

    Abstract: BUK455 BUK455-400A T0220AB
    Text: Philips Components BUK455-400A BUK455-400B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,


    OCR Scan
    PDF BUK455-400A BUK455-400B BUK455 -400A -400B T0220AB; M89-1158/RC BUK455-400B BUK455-400A T0220AB

    BUK455-50A

    Abstract: BUK455-50B buk455 15 1E41 DPP100-24 T0220AB
    Text: Philips Components BUK455-50A BUK455-50B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device Is Intended for use in Switched Mode Power Supplies SMPS , motor control, welding,


    OCR Scan
    PDF BUK455-50A BUK455-50B BUK455 M89-1155/RC BUK455-50A BUK455-50B 15 1E41 DPP100-24 T0220AB

    BUK455

    Abstract: BUK455-100A BUK455-100B T0220AB
    Text: Philips Components BUK455-100A BUK455-100B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a lastic envelope. he device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,


    OCR Scan
    PDF BUK455-100A BUK455-100B BUK455 -100A -100B M89-1156/RC BUK455-100A BUK455-100B T0220AB

    BUK455-600B

    Abstract: BUK455 SB4030 BUK455-600A 600B BUK455 600B T0220AB 1725R
    Text: Philips Components BUK455-600A BUK455-600B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended or use in Switched Mode Power Supplies (SMPS , motor control, welding,


    OCR Scan
    PDF BUK455-600A BUK455-600B BUK455 -600A -600B M89-1161/RC BUK455-600B SB4030 BUK455-600A 600B BUK455 600B T0220AB 1725R

    BUK455-200B

    Abstract: BUK455 BUK455-200A T0220AB TIL51
    Text: Philips Components BUK455-200A BUK455-200B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-elfect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,


    OCR Scan
    PDF BUK455-200A BUK455-200B BUK455 -200A -200B M89-1157/RC BUK455-200B BUK455-200A T0220AB TIL51

    vostro 1400

    Abstract: No abstract text available
    Text: Philips Semiconductors Product Specification BUK455-200A/B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device Is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,


    OCR Scan
    PDF BUK455-200A/B BUK455 -200A -200B T0220AB vostro 1400

    BUK475

    Abstract: BUK475-200A BUK475-200B
    Text: Product specification Philips Semiconductors PowerMOS transistor Isolated version of BUK455-200A/B GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended foruse in Switched Mode Power Supplies SMPS ,


    OCR Scan
    PDF BUK475-200A/B BUK455-200A/B -SOT186A BUK475 -200A -200B OT186A; BUK475-200A BUK475-200B

    BUK475

    Abstract: BUK455-60A BUK475-60B BUK475-60A
    Text: Product specification Philips Semiconductors PowerMOS transistor Isolated version of BUK455-60A/B GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended foruse in Switched Mode Power Supplies SMPS ,


    OCR Scan
    PDF BUK475-60A/B BUK455-60A/B -SOT186A BUK475 045urer OT186A; BUK455-60A BUK475-60B BUK475-60A

    BUK475

    Abstract: BUK475-100A BUK475-100B
    Text: Product specification Philips Semiconductors PowerMOS transistor Isolated version of BUK455-100A/B GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended foruse in Switched Mode Power Supplies SMPS ,


    OCR Scan
    PDF BUK475-100A/B BUK455-100A/B -SOT186A BUK475 -100B BUK475-1OOA/B OT186A; BUK475-100A BUK475-100B

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification PowerMOS transistor Isolated version of BUK455-200A/B GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies SMPS ,


    OCR Scan
    PDF BUK455-200A/B BUK475-200A/B BUK475 -200A -200B -SOT186A

    BUK455-400B

    Abstract: No abstract text available
    Text: PHILIPS INTERNATIONAL bSE J> 711002b T2b H P H I N Product Specification Philips Semiconductors BUK455-400B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a lastic envelope. he device is intended for use in


    OCR Scan
    PDF 711Gfi2b BUK455-400B -T0220AB

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification PowerMOS transistor Isolated version of BUK455-100A/B GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies fSMPS ,


    OCR Scan
    PDF BUK455-100A/B BUK475-100A/B BUK475 -10QA -100B -SOT186A

    K475

    Abstract: buk475
    Text: Philips Semiconductors Product specification PowerMOS transistor Isolated version of BUK455-200A/B GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies SMPS ,


    OCR Scan
    PDF BUK455-200A/B BUK475-200A/B BUK475 -200A -200B -SOT186A K475

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification PowerMOS transistor Isolated version of BUK455-100A/B GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies SMPS ,


    OCR Scan
    PDF BUK455-100A/B BUK475-100A/B BUK475 -100A -100B OT186A

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification PowerMOS transistor Isolated version of BUK455-60A/B GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies SMPS ,


    OCR Scan
    PDF BUK455-60A/B BUK475-60A/B BUK475 OT186A

    Untitled

    Abstract: No abstract text available
    Text: N AUER PHILIPS/DISCRETE b 'lE D bbS3T31 0030bS5 312 * A P X Product Specification Philips Semiconductors BUK455-400B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in


    OCR Scan
    PDF bbS3T31 0030bS5 BUK455-400B O220AB

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification PowerMOS transistor Isolated version of BUK455-200A/B GENERA L D ESCRIPTIO N N-channel enhancem ent mode field-effect pow er transistor in a plastic full-pack envelope. The device is intended for u se in Switched


    OCR Scan
    PDF BUK455-200A/B BUK475-200A/B BUK475 -200A -200B

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE BSE D • bbSBTEl 00E0S05 =1 ■ BUK455-450B PowerMOS transistor QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,


    OCR Scan
    PDF 00E0S05 BUK455-450B T-37-J3 bbS3131 bS3131 002QSDT

    Untitled

    Abstract: No abstract text available
    Text: 25E D N AMER PHI LI PS/ DIS CR ET E bb53T31 0020515 1 • BUK455-600A BUK455-600B PowerMOS transistor 3 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


    OCR Scan
    PDF bb53T31 BUK455-600A BUK455-600B BUK455 -600A -600B si10Id btS3131

    iran

    Abstract: BUK455-450B T0220AB taig
    Text: N AMER PHILIPS/DISCRETE ESE D • bbS3T31 0050505 =1 ■ PowerMOS transistor BUK455-450B T-3T-/3 GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


    OCR Scan
    PDF bbS3T31 BUK455-450B T-37-13 iran BUK455-450B T0220AB taig