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    TRANSISTOR BU2525AF Search Results

    TRANSISTOR BU2525AF Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR BU2525AF Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BU2525AF

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2525AF GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to 32 kHz.


    Original     		PDF BU2525AF OT199 BU2525AF

    BU2525AF

    Abstract: BY228
    Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2525AF GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to 32 kHz.


    Original     		PDF BU2525AF OT199 BU2525AF BY228

    BU2523AX

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2523AX GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of HDTV receivers and pc monitors.


    Original     		PDF BU2523AX BU2523AX

    bu2523af

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2523AF GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of HDTV receivers and pc monitors.


    Original     		PDF BU2523AF bu2523af

    BU2525AF

    Abstract: BU2725AX
    Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2725AX GENERAL DESCRIPTION High voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Designed to withstand VCES pulses up to 1700V.


    Original     		PDF BU2725AX OT399 BU2525AF BU2725AX

    bu2727d

    Abstract: BU2725DF BU2527 BU2727 BU2525AF Philips Capacitor
    Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2725DF GENERAL DESCRIPTION High voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Designed to withstand VCES pulses up to 1700V.


    Original     		PDF BU2725DF OT199 bu2727d BU2725DF BU2527 BU2727 BU2525AF Philips Capacitor

    BU2725DX

    Abstract: BU2525AF BU2527AFX transistor bu2725dx
    Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2725DX GENERAL DESCRIPTION High voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Designed to withstand VCES pulses up to 1700V.


    Original     		PDF BU2725DX OT399 BU2725DX BU2525AF BU2527AFX transistor bu2725dx

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2525AX GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to 32 kHz.


    Original     		PDF BU2525AX OT399

    BU2527DX

    Abstract: BU2527AF BU2525DF bu2527af data
    Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2527DX GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor with integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of high resolution monitors. Features improved


    Original     		PDF BU2527DX OT399 BU2527DX BU2527AF BU2525DF bu2527af data

    BU2523AF

    Abstract: BU2523 BU2523DX BU2525AF
    Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2523DX GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a full plastic envelope intended for use in horizontal deflection circuits of HDTV receivers and pc monitors.


    Original     		PDF BU2523DX BU2523AF BU2523 BU2523DX BU2525AF

    bu2525ax

    Abstract: BU2525AF BY228
    Text: Philips Semiconductors Preliminary specification Silicon Diffused Power Transistor BU2525AX GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to 32 kHz.


    Original     		PDF BU2525AX OT399 bu2525ax BU2525AF BY228

    BU2727AX

    Abstract: BU2525AF
    Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2727AX GENERAL DESCRIPTION High voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of high resolution monitors. Designed to withstand VCES pulses up to 1700V.


    Original     		PDF BU2727AX OT399 BU2727AX BU2525AF

    Philips BU2527AF

    Abstract: BU2527DF BU2527AF TRANSISTOR BU2525DF IBM REV 2.8 BU2525AF BU2525DF
    Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2527DF GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor with integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of high resolution monitors. Features improved


    Original     		PDF BU2527DF OT19n Philips BU2527AF BU2527DF BU2527AF TRANSISTOR BU2525DF IBM REV 2.8 BU2525AF BU2525DF

    equivalent BU2725DX

    Abstract: BU2725DX transistor bu2725dx BU2525AF bu2727d
    Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2725DX GENERAL DESCRIPTION High voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Designed to withstand VCES pulses up to 1700V.


    Original     		PDF BU2725DX OT399 equivalent BU2725DX BU2725DX transistor bu2725dx BU2525AF bu2727d

    BU2523AF

    Abstract: BU2523 BU2523DF BU2525AF
    Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2523DF GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a full plastic envelope intended for use in horizontal deflection circuits of HDTV receivers and pc monitors.


    Original     		PDF BU2523DF BU2523AF BU2523 BU2523DF BU2525AF

    BU2727

    Abstract: BU2727AF BU2525AF
    Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2727AF GENERAL DESCRIPTION High voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of high resolution monitors. Designed to withstand VCES pulses up to 1700V.


    Original     		PDF BU2727AF OT199 BU2727 BU2727AF BU2525AF

    BU2527

    Abstract: bu2527afx BU2525AF BU2725AF TRansistor 1300 free
    Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2725AF GENERAL DESCRIPTION High voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Designed to withstand VCES pulses up to 1700V.


    Original     		PDF BU2725AF OT199 BU2527 bu2527afx BU2525AF BU2725AF TRansistor 1300 free

    BU2527AX

    Abstract: BU2527 BU2527AF equivalent bu2527ax BU2525AF BU2527A BY228 bu2527af data
    Text: Philips Semiconductors Preliminary specification Silicon Diffused Power Transistor BU2527AX GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of high resolution monitors. Features improved RBSOA performance and is suitable for


    Original     		PDF BU2527AX BU2527AX BU2527 BU2527AF equivalent bu2527ax BU2525AF BU2527A BY228 bu2527af data

    BU2527AX

    Abstract: BU2527AF BU2527AX equivalent equivalent bu2527ax
    Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2527AX GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of high resolution monitors. Features improved RBSOA performance and is suitable for


    Original     		PDF BU2527AX BU2527AX BU2527AF BU2527AX equivalent equivalent bu2527ax

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2525AF GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to 32 kHz.


    OCR Scan     		PDF BU2525AF 100-P /PD35C 1E-06 1E-04 1E-02

    transistor bu2525af

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2525AF GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to 32 kHz.


    OCR Scan     		PDF BU2525AF transistor bu2525af

    BU2525AF

    Abstract: PPD-25 PD25 ScansUX30
    Text: Philips Semiconductors Product specification Silicon diffused power transistor BU2525AF GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to 32 kHz.


    OCR Scan     		PDF BU2525AF 0G77t OT199; D077LS1 PPD-25 PD25 ScansUX30

    Untitled

    Abstract: No abstract text available
    Text: N AUER PHILIPS/DISCRETE bTE ] • b b S B ' m □□SaB'lB flOB ■ Philips Semiconductors Product Specification Silicon Diffused Power Transistor BU2525AF G EN ERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in


    OCR Scan     		PDF BU2525AF OT199;

    Transistor 5331

    Abstract: ELLS 110 BU2525AF LLS3131
    Text: N AMER P H I L I P S / D I S C R E T E bTE » WÊ 1 ^ 5 3 ^ 3 1 Philips Semiconductors □GEfl3tì3 fl03 BIAPX Product Specification Silicon Diffused Power Transistor BU2525AF GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in


    OCR Scan     		PDF BU2525AF bb53T31 G0203tifl OT199; Transistor 5331 ELLS 110 BU2525AF LLS3131