Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE 86D 0 1 122 OLE D D • LLS3131 Q0133L0 7 T '3 'i- /J BLU50 V.H.F./U.H.F. PUSH-PULL POWER TRANSISTOR N-P-N silicon planar epitaxial push-pull transistor designed for use in military and professional wideband applications in the 30 to 400 MHz range.
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LLS3131
Q0133L0
BLU50
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Untitled
Abstract: No abstract text available
Text: *OT » * 1990 Philips Com ponents D a te s h e e t s ta tu s P re lim in a ry s p e c ific a tio n d a te o f is s u e O c to b e r 1d 90 FEATURES • Short channel transistor with high ratio [YfelTCia. • Low noise gain controlled amplifier to 1 GHz. BF988
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BF988
bbS3131
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BUK100-50GS
Abstract: T0220AB
Text: N AMER PHILIPS/DISCRETE bTE D • bbSa^l 0CI3D34b bb7 ■ APX Philips Sem iconductors Product Specification PowerMOS transistor TOPFET DESCRIPTION Monolithic temperature and overload protected power MOSFET in a 3 pin plastic envelope, intended as a general purpose switch for
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3D34b
BUK100-50GS
Iisl/Iisl25
BUK100-50GS
T0220AB
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PBYR10100
Abstract: L20A
Text: t uà j. b m DISCRETE SEMICONDUCTORS In liiT PBYR10100 series Schottky Barrier rectifier diodes Product specification File under Discrete Semiconductors, SC02 August 1992 Philips Semiconductors PHILIPS bbSSISl 00321*12 A17 Printed From CAPS XPert Version 1,2P
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PBYR10100
bb53131
T0220AC
L20A
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