BU2727DX
Abstract: No abstract text available
Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BU2727DX DESCRIPTION •High Switching Speed ·High Voltage ·Built-in Ddamper Ddiode APPLICATIONS ·Designed for use in horizontal deflection circuits of high resolution monitors.
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BU2727DX
600mA;
BU2727DX
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BU2727DF
Abstract: BU2727
Text: SavantIC Semiconductor Product Specification BU2727DF Silicon NPN Power Transistors DESCRIPTION •With TO-3PFa package ·High voltage,high speed ·Built-in damper diode APPLICATIONS ·For use in horizontal deflection circuits of high resolution monitors PINNING
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BU2727DF
600mA
BU2727DF
BU2727
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BU2525
Abstract: BU2727 BU2525A BU2727AW
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2727AW GENERAL DESCRIPTION High voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of high resolution monitors, suitable for operation up to 64 kHz. Designed to withstand VCES pulses up to
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BU2727AW
OT429
BU2525
BU2727
BU2525A
BU2727AW
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bu2525
Abstract: BU2525A BU2727A BY228
Text: Philips Semiconductors Preliminary specification Silicon Diffused Power Transistor BU2727A GENERAL DESCRIPTION High voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of high resolution monitors, suitable for operation up to 64 kHz. Designed to withstand VCES pulses up to
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BU2727A
bu2525
BU2525A
BU2727A
BY228
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BU2727AF
Abstract: No abstract text available
Text: SavantIC Semiconductor Product Specification BU2727AF Silicon NPN Power Transistors DESCRIPTION •With TO-3PFa package ·High voltage ·High speed switching APPLICATIONS ·For use in horizontal deflection circuits of high resolution monitors PINNING PIN DESCRIPTION
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BU2727AF
BU2727AF
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BU2727AX
Abstract: BU2525AF
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2727AX GENERAL DESCRIPTION High voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of high resolution monitors. Designed to withstand VCES pulses up to 1700V.
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BU2727AX
OT399
BU2727AX
BU2525AF
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BU2727AW
Abstract: No abstract text available
Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BU2727AW DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = 825V (Min) ·High Switching Speed APPLICATIONS ·Designed for use in horizontal deflection circuits of color
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BU2727AW
100mA;
BU2727AW
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BU2727A
Abstract: BU2525A bu2525
Text: Philips Semiconductors Preliminary specification Silicon Diffused Power Transistor BU2727A GENERAL DESCRIPTION High voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of high resolution monitors, suitable for operation up to 64 kHz. Designed to withstand VCES pulses up to
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BU2727A
BU2727A
BU2525A
bu2525
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BU2727AW
Abstract: No abstract text available
Text: SavantIC Semiconductor Product Specification BU2727AW Silicon NPN Power Transistors DESCRIPTION •With TO-247 package ·High voltage ·High speed switching APPLICATIONS ·For use in horizontal deflection circuits of high resolution monitors PINNING PIN DESCRIPTION
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BU2727AW
O-247
O-247)
100mA
BU2727AW
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BU2727
Abstract: BU2727AF BU2525AF
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2727AF GENERAL DESCRIPTION High voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of high resolution monitors. Designed to withstand VCES pulses up to 1700V.
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BU2727AF
OT199
BU2727
BU2727AF
BU2525AF
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BC548 TRANSISTOR REPLACEMENT
Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
Text: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction
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BAP1321-02
BAP65-05
BAP65-03
BAP65-05W
BAP65-02
BAP63-03
BAP63-02
BAP64-03
BAP64-02
BB143
BC548 TRANSISTOR REPLACEMENT
TYN612 pin diagram
1n4007 smd, toshiba
S0817MH
TYN604 scr pin diagram
kmz51 compass
TRANSISTOR S1A 64 smd
toshiba l 300 laptop motherboard circuit diagram
JFET TRANSISTOR REPLACEMENT GUIDE j201
replacements for transistor NEC D 587
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equivalent BU2725DX
Abstract: BU2725DX transistor bu2725dx BU2525AF bu2727d
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2725DX GENERAL DESCRIPTION High voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Designed to withstand VCES pulses up to 1700V.
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BU2725DX
OT399
equivalent BU2725DX
BU2725DX
transistor bu2725dx
BU2525AF
bu2727d
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BU2525AF
Abstract: BU2725AX
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2725AX GENERAL DESCRIPTION High voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Designed to withstand VCES pulses up to 1700V.
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BU2725AX
OT399
BU2525AF
BU2725AX
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bu2727d
Abstract: BU2725DF BU2527 BU2727 BU2525AF Philips Capacitor
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2725DF GENERAL DESCRIPTION High voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Designed to withstand VCES pulses up to 1700V.
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BU2725DF
OT199
bu2727d
BU2725DF
BU2527
BU2727
BU2525AF
Philips Capacitor
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ha 431 transistor
Abstract: No abstract text available
Text: Product specification Philips Semiconductors Silicon Diffused Power Transistor BU2727AX GENERAL DESCRIPTION High voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of high resolution monitors. Designed to withstand VCES pulses up to 1700V.
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BU2727AX
ha 431 transistor
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2727AF GENERAL DESCRIPTION High voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of high resolution monitors. Designed to withstand VCES pulses up to 1700V.
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BU2727AF
IB-04
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Preliminary specification Silicon Diffused Power Transistor BU2727A GENERAL DESCRIPTION High voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of high resolution monitors, suitable for operation up to 64 kHz. Designed to withstand VCES pulses up to
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BU2727A
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bu2727aw
Abstract: BU2727
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2727AW GENERAL DESCRIPTION High voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of high resolution monitors, suitable for operation up to 64 kHz. Designed to withstand VCESpulses up to
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BU2727AW
bu2727aw
BU2727
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2727AF GENERAL DESCRIPTION High voltage, high-speed switching npn transistor In a plastic full-pack envelope intended for use in horizontal deflection circuits of high resolution monitors. Designed to withstand VCESpulses up to 1700V.
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BU2727AF
Th5fS25
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2727AW GENERAL DESCRIPTION High voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of high resolution monitors, suitable for operation up to 64 kHz. Designed to withstand VCES pulses up to
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BU2727AW
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2727AX GENERAL DESCRIPTION High voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of high resolution monitors. Designed to withstand VCES pulses up to 1700V.
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BU2727AX
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BU2508-AX
Abstract: BU506D, BU1506DX, BU2506DF BU2506DF BU4508AF BU4506DF BU4508DF BU4508DX BU2725DX BU2506DX BU4525AX
Text: Philips Semiconductors Power Bipolar Transistors Index Types added to the range since the last issue of Handbook SC06 are shown in bold print. TYPE NUMBER PAGE TYPE NUMBER PAGE TYPE NUMBER PAGE BU505 42 BU2520AF 206 BU2722AF 391 BU505D 42 BU2520AW 212 BU2722AX
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BU505
BU505D
BU505F
BU505DF
BU506
BU506D
BU506F
BU506DF
BU508AF
BU508AW
BU2508-AX
BU506D, BU1506DX, BU2506DF
BU2506DF
BU4508AF
BU4506DF
BU4508DF
BU4508DX
BU2725DX
BU2506DX
BU4525AX
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BU1508DX
Abstract: BU1508AX BU2708AF bu2525af BU2508-AX BU2720DF BU2520DX
Text: Philips Semiconductors Concise Catalogue 1996 High-voltage and switching NPN power transistors POWER SEMICONDUCTORS HIGH-VOLTAGE AND SWITCHING NPN POWER TRANSISTORS continued type number package 35 35 45 45 45 45 125 125 45 45 45 45 45 45 125 125 45 45 45
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BU1508AX
BU1508DX
BU2508AF
BU2508AX
BU2508DF
BU2508DX
BU2508A
BU2508D
BU2708AF
bu2525af
BU2508-AX
BU2720DF
BU2520DX
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BU25150X
Abstract: BU2508-AX BU2708AX BUS08D BUT12AF BU2708DX BU2725DX BU2720DX BU1508AX BU1508DX
Text: Philips Semiconductors High-voltage and Switching NPN Power Transistors Types added to the range since the last issue of Handbook SC06 1996 issue are shown in bold print. TYPE NUMBER PAGE TYPE NUMBER PAGE TYPE NUMBER PAGE BU505 38 BU2520AW 203 BU2722AX 387
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BU505
BU505D
BU505DF
BU505F
BU506
BU506D
BU506DF
BU506F
BU508AF
BU508AW
BU25150X
BU2508-AX
BU2708AX
BUS08D
BUT12AF
BU2708DX
BU2725DX
BU2720DX
BU1508AX
BU1508DX
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