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    TRANSISTOR BU 112 Search Results

    TRANSISTOR BU 112 Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR BU 112 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: My-Com. High-Precision Switch with 1 m Accuracy. Reliable, ultra-precise. Edition 2013 « Micrometer Precision: 70 times more accurate than a hair is thick » Visibly better: Baumer sensors. The Baumer Group is leading at international level in the development and


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    PDF CH-8501 0x/12 11xxxxxx

    carlogavazzi

    Abstract: K7M-DR20U K7M-DR60u K7M-DR40U K7M-DR30U K7M-DRT40U koyo PLC module PMU LG PMU-830TT PMU-300BT
    Text: Overview2004CA.qk 12/16/04 11:29 AM Page 1 Gross Automation 877 268-3700 • www.carlogavazzisales.com · sales@grossautomation.com Overview2004CA.qk 12/16/04 11:29 AM Page 2 CARLO GAVAZZI – A Global Force In Offering the Complete Package CARLO GAVAZZI offers a vast array of high quality products, which provide you the optimum solutions to your


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    PDF Overview2004CA yo1500 GH64404412 G81104406 G82104406 G85101101 G85102201 G85103301 G34485234 carlogavazzi K7M-DR20U K7M-DR60u K7M-DR40U K7M-DR30U K7M-DRT40U koyo PLC module PMU LG PMU-830TT PMU-300BT

    D128 transistor

    Abstract: transistor D128 PT16580-LQ transistor D113 D114 TRANSISTOR transistor D195 TRANSISTOR D114 PT16580 transistor D132 transistor d155
    Text: PT16580 General Purpose LCD Driver IC DESCRIPTION PT16580 is an LCD Driver IC which can drive up to 200 segments. It can be used for frequency display in microprocessor-controlled radio receiver and in other display applications. PT16580 supports both 1/3 duty,


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    PDF PT16580 PT16580 MS-026BCD. D128 transistor transistor D128 PT16580-LQ transistor D113 D114 TRANSISTOR transistor D195 TRANSISTOR D114 transistor D132 transistor d155

    sot-23-5 marking code radj

    Abstract: PACKAGE MARKING RADJ SOT23-5 BL9581 DC TO FREQUENCY DUTY CYCLE 50 CIRCUIT VOLTAGE 12V OUT MARKING HF SOT23-5 LED driver with internal switch GRM42-2X7R475K-50
    Text: BL9581 36V, 1.2A Step-down High Brightness LED Driver with Internal Switch FEATURES z z z z z z z z z z z z z z z z DESCRIPTION Simple low parts count Internal 36V NDMOS switch Up to 1.2A output current Single pin on/off and brightness control using DC voltage or PWM


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    PDF BL9581 OT23-5 OT-23-5 BL9581 sot-23-5 marking code radj PACKAGE MARKING RADJ SOT23-5 DC TO FREQUENCY DUTY CYCLE 50 CIRCUIT VOLTAGE 12V OUT MARKING HF SOT23-5 LED driver with internal switch GRM42-2X7R475K-50

    Untitled

    Abstract: No abstract text available
    Text: BL9581 36V 36V, 1.2 1.2A .2A LED StepStep-down High Brightness LED Driver with Internal Switch FEATURES DESCRIPTION Simple low parts count Internal 36V NDMOS switch Up to 1.2A output current Single pin on/off and brightness control using DC voltage or PWM


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    PDF BL9581 Step36V, OT23-5 OT-23-5 BL9581

    GRM42-2X7R475K-50

    Abstract: sot89 MARK BU BL9582
    Text: BL9582 32V, 1.4A Step-down High Brightness LED Driver with Internal Switch FEATURES z z z z z z z z z z z z z z z z DESCRIPTION Simple low parts count Internal 32V NDMOS switch Up to 1.4A output current Single pin on/off and brightness control using DC voltage or PWM


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    PDF BL9582 OT89-5 BL9582 GRM42-2X7R475K-50 sot89 MARK BU

    BU 103 t transistor

    Abstract: DIN 41872 BU 103 A transistor 2U25
    Text: 55C D fl535b05 0004ÔSM 1 « S I E G , • T-33-29 NPN Silicon Darlington Power Transistor BU X 28 Not for new design - SIEMENS AKTIEN6ESELLSCHAF -BU X 28 is a triple diffused monolithic NPN dariington power transistor in TO 3 case 3 A 2 DIN 41872 . The collector is electrically connected to the case. The resistor between


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    PDF fl535b05 T-33-29 a23SbOS 00Q4fl5b BUX28 H--01 BU 103 t transistor DIN 41872 BU 103 A transistor 2U25

    TRANSISTOR MARKING CODE R2A

    Abstract: din 74 F5 TRANSISTOR MARKING 705 transistor 81 110 w 85 transistor BU 109 705 transistor ZS20 TRANSISTOR BC 5 transistor BU 705 transistor 263-1
    Text: TELEFUNKEN ELECTRONIC 17E » • lALGfi DOCHM'JB b BU 705 in u m id ì« ! electronic CreativeTtchooieg*« T-33-13 Silicon NPN Power Transistor Applications: Horizontal deflection circuits in black and white TV-receivers Features: • High reverse voltage


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    PDF DIN41 T-33-/S T0126 15A3DIN TRANSISTOR MARKING CODE R2A din 74 F5 TRANSISTOR MARKING 705 transistor 81 110 w 85 transistor BU 109 705 transistor ZS20 TRANSISTOR BC 5 transistor BU 705 transistor 263-1

    705 transistor

    Abstract: transistor BU 705 transistor BU 109 TOP-3 weight transistor BU 110 u 110 telefunken Scans-0014927
    Text: TELEFUNKEN ELECTRONIC 17E » • lALGfi DOCHM'JB b BU 705 i n u m i d ì « ! electronic Creative Ttchooieg*« T-33-13 Silicon NPN Power Transistor Applications: Horizontal deflection circuits in black and white TV-receivers Features: • High reverse voltage


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    PDF DIN41 T-33-/S T-33-13 705 transistor transistor BU 705 transistor BU 109 TOP-3 weight transistor BU 110 u 110 telefunken Scans-0014927

    transistor BU 109

    Abstract: transistor BU 110 705 transistor FC1A
    Text: A E G CORP 17E D □□STMab OODTMTB T BU 705 " C il'£ e le c t r o n ic C'ei-wTaifrcSQg-es T-33-13 Silicon NPN Power Transistor A p p lica tio n s: Horizontal deflection circuits In black and white TV-receivers Features: • High reverse voltage • In triple diffusion technique


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    PDF T-33-13 G02T42b T-33-13 transistor BU 109 transistor BU 110 705 transistor FC1A

    BU712

    Abstract: transistor b 745 bu112 boitier to3 transistor BU 112
    Text: BU 112 NPN S ILIC O N TR A N S IS TO R , MESA TR AN S IS TO R NPN S IL IC IU M , MESA - This transistor is primarily intended for deflection circuits applications in color T V receivers fitted with 90° kinescope Ce c irc u it est destiné a u x app lica tions de c irc u its de déviation


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    PDF CB-19 BU712 transistor b 745 bu112 boitier to3 transistor BU 112

    transistor k 425

    Abstract: sc 107 transistor npn, transistor, sc 107 b BU522 transistor transistor 0190 C107M BU522 BU522B 221A-04 BU522A
    Text: MOTOROLA SC XSTRS/R F 12E I b3b75SM Q0fl4fl22 7 | BU522 BU522A BU522B MOTOROLA SEMICONDUCTOR TECHNICAL DATA HIGH V O LTA G E SILICON POWER DARLINGTO NS 7 AMPERES Power Transistor mainly intended for use as ignition circuit output transistor. DARLINGTON T R IPLE D IFFU SED


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    PDF r-33-73 BU522 BU522A BU522B BU522) BU522A) BU522B) BU522A, transistor k 425 sc 107 transistor npn, transistor, sc 107 b BU522 transistor transistor 0190 C107M BU522 BU522B 221A-04 BU522A

    K4175

    Abstract: BC 148 TRANSISTOR PIN CONFIGURATION buk417-500ae transistor BC 147 sf 128 transistor BUK417-500B BUK417-500BE transistor bc 148 BC 148 transistor bc 147 B transistor
    Text: PH ILIP S I NTE RN ATI ON AL bSE D H 7 1 1 0 6 2 b 00b3flfib T5^ « P H I N Philips Semiconductors Product Specification PowerMOS transistor GEN ERAL DESCRIPTION N-channei enhancement mode field-effect power transistor in IS O T O P envelope. The device is intended for use in


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    PDF 711DflSb BUK417-500AE/BE OT227B BUK417 -500AE -500BE BUK417-500AE K4175 BC 148 TRANSISTOR PIN CONFIGURATION buk417-500ae transistor BC 147 sf 128 transistor BUK417-500B BUK417-500BE transistor bc 148 BC 148 transistor bc 147 B transistor

    VEB mikroelektronik

    Abstract: Mikroelektronik Information Applikation mikroelektronik Heft 12 Radio Fernsehen Elektronik 1977 Heft 9 information applikation information applikation mikroelektronik mikroelektronik DDR Halbleiterbauelemente DDR aktive elektronische bauelemente ddr mikroelektronik Heft
    Text: m B Ik i^ ts je le l-c te n o r iil-c information Applikation m l^ o e le l-c fe n a riil-c Information Applikation H EFT 17 LEISTUNGSELEKTRONIK 4 Die sicheren A rbeitsbereiche Leistungsschalttransistoren VEB MIKROELEKTRONIK „VARLIIE8KNECHT“57AHNSDORP


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    PDF 57AHNSDORP VEB mikroelektronik Mikroelektronik Information Applikation mikroelektronik Heft 12 Radio Fernsehen Elektronik 1977 Heft 9 information applikation information applikation mikroelektronik mikroelektronik DDR Halbleiterbauelemente DDR aktive elektronische bauelemente ddr mikroelektronik Heft

    BUF646

    Abstract: No abstract text available
    Text: T e m ic BUF646 BUF646A TELEFUN KEN Semiconductors Silicon NPN High Voltage Switching Transistor Features • S im p le-sW itch-O ff T ransistor SW OT • HIGH SPEED technology • Planarpassivation • 100 kHz sw itching rate • Very low sw itching losses


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    PDF BUF646 BUF646A BUF646 BUF646A

    PT200 RTD reference table

    Abstract: PT200 Platinum RTD reference table RTD SENSING CIRCUIT 4-20mA burr-brown Model 4203 rtd temperature instrumentation amplifier circuit Burr-Brown 4203 PT200 Platinum RTD table PT200 rtd U/25/20/TN26/15/850/CTC 313 transistor pin diagram PT200 Platinum
    Text: For Im e â ia le Assistance, Coalaci Your Local Salesperson BU R R -B R O W N XTR103 |g » B 4-20mA Current Transmitter with RTD EXCITATION AND LINEARIZATION FEATURES APPLICATIONS • LESS THAN ±1% TOTAL ADJUSTED ERROR, -40°C TO +85°C • RTD EXCITATION AND LINEARIZATION


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    PDF XTR103 4-20mA 110dB Pt100 XTRI03 4-20mA, 0D25EDb 1-800-54S-B132 PT200 RTD reference table PT200 Platinum RTD reference table RTD SENSING CIRCUIT 4-20mA burr-brown Model 4203 rtd temperature instrumentation amplifier circuit Burr-Brown 4203 PT200 Platinum RTD table PT200 rtd U/25/20/TN26/15/850/CTC 313 transistor pin diagram PT200 Platinum

    RCA TO-5

    Abstract: 2N2016 2N3055 2n3772 2N6474 JAN 2N5781 2N5415 2N6107 2N6248 2N6372
    Text: EPITAXIAL-BASE N-P-N & P-N-P POWER TYPES 1C t o 15 A . . . P f t o 2 0 0 W . . . V C E t o 125 V 1« “ -3.5 max. Py«10W m ax . ITO-3SI I{ > 8 A max. P y * 40 W max. TO-66 * lc * - 6 A max. P y - 40 W max. 1TO-66)* le « 7 A max. P y - 40 W max. V E R S A W ATT


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    PDF IT039I O-2201 lc-15 ITO-31 O-2201 90x90 RCA TO-5 2N2016 2N3055 2n3772 2N6474 JAN 2N5781 2N5415 2N6107 2N6248 2N6372

    cqx 87

    Abstract: germanium AEG Thyristor T 558 F TDA 2516 bu208 bf506 la 4430 BF963 TDA1086 transistor bf 175
    Text: Page Contents Diodes 8 Transistors 15 Optoelectronic Devices 24 Integrated Circuits 33 1 Contents, alpha-numeric Type Page AA 112 AA113 AA117 AA 118 AA119 AA 132 AA 133 AA 134 AA 137 AA 138 12 12 8 12 12 8 8 8 12 12 BA 111 BA 121 BA 124 BA 125 BA 147/. BA 157


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    PDF AA113 AA117 AA119 BAV17 BAV18 BAV19 BAV20 BAV21 cqx 87 germanium AEG Thyristor T 558 F TDA 2516 bu208 bf506 la 4430 BF963 TDA1086 transistor bf 175

    bux diode

    Abstract: BUX28 Q62702-U258 Q62901-B11-A Q62901-B50 siemens power transistor bux c T3329 22-16 diode
    Text: ESC D • 0235bOS QQQ4ÔS4 1 ■ S I E 6 , T-33-29 NPN Silicon Darlington Power Transistor BUX28 Not for new d e sign - SIEMENS AKTIEN6ESELLSCHAF B U X 2 8 is a triple diffused monolithic N PN dariington power transistor in TO 3 case 3 A 2 DIN 41872 . The collector is electrically connected to the case. The resistor between


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    PDF fl235bOS 0004fiSM T-33-29 BUX28 Q62702-U258 Q62901-B11-A Q62901-B50 fl235b05 D004fi5b T-33-29 bux diode BUX28 Q62702-U258 Q62901-B11-A Q62901-B50 siemens power transistor bux c T3329 22-16 diode

    ANI 1015

    Abstract: TRANSISTOR SE 135 t3hs 2SA1256 2SA1688
    Text: SA NY O S E M I C O N D U C T O R CORP SSE D 7 1 1 7 0 7 b 00013=112 T T-3I-/S 2SA1688 ♦ PNP Epitaxial Planar Silicon Transistor 2 059 High-Frequency General-Purpose Amp Applications D2798 A pplications Ideally suited for use in FM RF am plifiers, m ixers, oscillators, converters, IF am plifiers


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    PDF H707b 2SA1688 100MHz) 2SA1688-applied ANI 1015 TRANSISTOR SE 135 t3hs 2SA1256

    Untitled

    Abstract: No abstract text available
    Text: B U R R -B R O W N XTR106 4-20mA CURRENT TRANSMITTER with Bridge Excitation and Linearization FEATURES APPLICATIONS • LOW TOTAL UNADJUSTED ERROR • PRESSURE BRIDGE TRANSMITTER • 2.5V, 5V BRIDGE EXCITATION REFERENCE • STRAIN GAGE TRANSMITTER • 5.1V REGULATOR OUTPUT


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    PDF XTR106 4-20mA i25ppm 25fiV/Â 110dBmin 14-PIN SO-14 D033b22 ZZ235

    CHN T4 1060

    Abstract: LM7000 LM7001 transistor CHN 137 1137N CHN 044 VW LA1137 YD-9494-1 sfp450h shortwave antenna design
    Text: I Ordering number: ENÎ35Q7 Monolithic Linear IO LA1136N, 1136NM, 1137N, 1137NM AM Tuners OVERVIEW FEATURES The LA1136N/NM and LA1137N/NM are special-pur.pose, electronically aligned AM tuner ICs for automo­ tive and consumer stereo receivers. For tuning, they


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    PDF LA1136N, 1136NM, 1137N, 1137NM LA1136N/NM LA1137N/NM LA1136N LA1I37N/NM CHN T4 1060 LM7000 LM7001 transistor CHN 137 1137N CHN 044 VW LA1137 YD-9494-1 sfp450h shortwave antenna design

    RCA 40636 transistor

    Abstract: rca 40636 rca 2N3771 power circuit 40636 rca rca 40327 300W TRANSISTOR AUDIO AMPLIFIER 40636 220v 300w ac regulator circuit 2N3055 RCA 40327
    Text: Ic to 80 A . . . P t to 300 W . . . V cE to 170 V H O M ETAXIAL-BASE N-P-N POWER TYPES le - 16 A max. •260 W max. <e “ 1.6 A max. le a 1 . S A max. lc » 3 .S A max. lc * 4 A m ax. lc a 4 A max. le • 3 A max. le “ 3 A max. le - 7 A max. lc a 1 S A max.


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    PDF ITO-391- ITO-220) O-661â ITO-2201 O-2201 ITO-31 130x130 RCA 40636 transistor rca 40636 rca 2N3771 power circuit 40636 rca rca 40327 300W TRANSISTOR AUDIO AMPLIFIER 40636 220v 300w ac regulator circuit 2N3055 RCA 40327

    RCA 40313

    Abstract: 2n1482 RCA 40250 2N3054 2N344 2N5298 2N5786 2N6478 ITO-220
    Text: Ic to 80 A . Pt to 300 W . V c E to 170 V H O M E T A X IA L -B A S E N-P-N POW ER T Y P E S le - 16 A max. •260 W max. <e “ 1.6 A max. le a 1 . S A max. lc » 3 .S A max. lc * 4 A m ax. lc a 4 A max. le • 3 A max. le “ 3 A max. le - 7 A max. lc a 1 S A max.


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    PDF ITO-391- ITO-220) O-661â ITO-2201 O-2201 ITO-31 130x130 RCA 40313 2n1482 RCA 40250 2N3054 2N344 2N5298 2N5786 2N6478 ITO-220