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    TRANSISTOR BS 140 Search Results

    TRANSISTOR BS 140 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR BS 140 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    chip die npn transistor

    Abstract: quad hf npn transistors
    Text: IGN W D ES E N R T FO ODUC NDED T E PR O MME U C IT E T R BS Data Sheet NOT LE S U A3127 POSSIB CA3127, HF April 2002 High-Frequency NPN Transistor Array For Low-Power Applications at Frequencies Up to 1.5GHz The CA3227 consists of five general purpose silicon NPN


    Original     		PDF A3127 CA3127, CA3227 FN1345 CA3227 PUB95 MO-220 chip die npn transistor quad hf npn transistors

    CA3127

    Abstract: CA3227 CA3227M CA3227M96 TB379 610E 800E
    Text: CA3227 IGNS W DES E N R O DED F E PRODUCT MMEN UT O C IT E T Data Sheet U BS S NOT R E L B A3127 POSSI CA3127, HF High-Frequency NPN Transistor Array For Low-Power Applications at Frequencies Up to 1.5GHz The CA3227 consists of five general purpose silicon NPN


    Original     		PDF CA3227 A3127 CA3127, CA3227 FN1345 CA3127 CA3227M CA3227M96 TB379 610E 800E

    bash audio amplifier circuit diagram

    Abstract: bash indigo audio amplifier circuit diagram indigo bash bash amp diagram bash audio amplifier circuit diagram mono bash indigo STABP01 preamplifier st STA5100 8 pin 4v power supply converter
    Text: STA5100 140W MONO POWER AMPLIFIER MONOCHIP BRIDGE MONO AMPLIFIER FOR BASH ARCHITECTURE 110W OUTPUT POWER @ R L = 4 Ω, THD = 0.5% 140W OUTPUT POWER @ R L = 4 Ω, THD = 10% HIGH DYNAMIC PREAMPLIFIER INPUT STAGES EXTERNAL PROGRAMMABLE FEEDBACK TYPE COMPRESSORS


    Original     		PDF STA5100 FLEXIWATT27 bash audio amplifier circuit diagram bash indigo audio amplifier circuit diagram indigo bash bash amp diagram bash audio amplifier circuit diagram mono bash indigo STABP01 preamplifier st STA5100 8 pin 4v power supply converter

    DIN 32676

    Abstract: CLASS 2500 VALVE PRESSURE CHART transistor sms asme transistor D 322 DIN 43650 form a P122D din 64 pin ribbon type c RG2 -relay valve B16-5-1988
    Text: 8032 INLINE Flow Switch with On/Off indicator • DN 5/16“ to 2“ orifice • Local indicator • Adjustable switching contact transistor or relay • Adjustable hysterisis and delay time Type 8032 can be combined with. Type S030 Fitting Type 6013 Type 6213


    Original     		PDF

    tb31224cf

    Abstract: TC35453F tb31224 TC35470 tb31207afn TC35470AF TB31207 TC35133 TA31056F TA31033P
    Text: Communications Equipment ICs Telephone IC Series z 122 Mobile Radio IC Series z 123 Fax Machine ICs z 125 Neuron Chips for LonWorks Technology z 126 121 Telephone IC Series Bipolar Bi-CMOS ICs TA31065N TA31065FA TA31033P TA31033F TA31033AP Function Telephone


    Original     		PDF TA31065N TA31065FA TA31033P TA31033F TA31033AP TA31068F TB31303BF TB31307AF TA31056P TA31056F tb31224cf TC35453F tb31224 TC35470 tb31207afn TC35470AF TB31207 TC35133 TA31056F TA31033P

    SC70-5L

    Abstract: No abstract text available
    Text: STCL932K 32,768 Hz silicon oscillator Features • Fixed frequency 32,768 Hz ■ –1.2%/+0.8% frequency accuracy over all conditions ■ 1.65 to 1.95 V operation ■ Low operating current, ultra low standby current ■ Push-pull, CMOS compatible frequency


    Original     		PDF STCL932K SC70-5L STCL932K SC70-5L

    b0714

    Abstract: "power sourcing equipment" "powered device" circuit diagram 48V power supply PSE Poe
    Text: HV110 Power-over-Ethernet Interface PD Controller Meets IEEE802.3afTM Standard General Description ► ► ► ► ► The HV110 provides complete power management and protection for Powered Devices PDs utilizing the IEEE802.3af protocol. As the most complete PD Power Manager available,


    Original     		PDF HV110 IEEE802 400mA 350mA b0714 "power sourcing equipment" "powered device" circuit diagram 48V power supply PSE Poe

    bs170

    Abstract: 5K02 MARKING BS
    Text: SIEMENS BS 170 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • ^GS th = 0.8.2.0V 5 VPT05158 Pin 1 Pin 2 S Type VDS b BS 170 60 V 0.3 A Type BS 170 BS 170 Ordering Code Q67000-S061 Q67000-S076 Pin 3 G ^DS(on) Package


    OCR Scan     		PDF VPT05158 Q67000-S061 Q67000-S076 E6288 11---------------------------------O bs170 5K02 MARKING BS

    transistor bh ra

    Abstract: WE VQE 24 E D 400 F 6 F BIPOLAR TRANSISTOR WE VQE 11 E BUK856-800A T0220AB M 615 transistor
    Text: PHILIPS INTERNATIONAL bSE D • 7110fl5b 00b4353 ^bS ■ P H I N Philips Semiconductors_ Product Specification Insulated Gate Bipolar Transistor IGBT GENERAL DESCRIPTION QUICK REFERENCE DATA Fast-switching N-channel insulated gate bipolar power transistor in a


    OCR Scan     		PDF BUK856-800A T0220AB transistor bh ra WE VQE 24 E D 400 F 6 F BIPOLAR TRANSISTOR WE VQE 11 E BUK856-800A M 615 transistor

    BUK427-400A

    Abstract: BUK427-400B UNC20
    Text: N AMER □ □ 2 0 2 bS 4 SSE D PHILIPS/DISCRETE PowerMOS transistor BUK427-400A BUK427-400B r-rh }} GENERAL DESCRIPTION SYMBOL Cfl G > N-channef enhancement mode field-effect power transistor in a plastic full pack envelope. The device is intended for use in


    OCR Scan     		PDF BUK427-400A BUK427-400B BUK427 -400A -400B UNC20

    BLW40

    Abstract: MCD205 TLO 721
    Text: Philips Sem iconductors I 7 1 1 DS2 b 0 0 t>3232 3 bS ^BPHIN PHILIPS INTERNATIONAL VHF power transistor FEATURES • Emitter-ballasting resistors for an optimum temperature profile • Gold metallization ensures excellent reliability. Product specification


    OCR Scan     		PDF 711065b 00b3535 BLW40 OT120 PINNING-SOT120 BLW40 MCD205 TLO 721

    BUK581-100A

    Abstract: DD3003
    Text: tiTE D N AMER P H I L I P S / D I S C R E T E • b bS BT a i □03Dfl3tj 25 2 ■ APX Product Specification Philips Semiconductors PowerMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope


    OCR Scan     		PDF 0030fl3t, BUK58Ã -100A OT223 aD30a41 BUK581 OT223. BUK581-100A DD3003

    BUK427-400A

    Abstract: 100-P BUK427-400B lD25-c RI LGR
    Text: N AMER btiS3'i31 □□202 bS SSE D P H I L I P S / D I SC RE T E 4 PowerMOS transistor BUK427-400A BUK427-400B • GENERAL DESCRIPTION SYMBOL CO Û > N-channel enhancement mode field-effect power transistor in a plastic full pack envelope. The device is intended for use in


    OCR Scan     		PDF BUK427-400A BUK427-400B BUK427 -400A -400B 100-P BUK427-400B lD25-c RI LGR

    smd diode code pj 70

    Abstract: uras 10 pj 68 SMD diode smd diode code pj 50
    Text: SIEMENS SPD30N03 SPU30N03 Preliminary data SIPMOS Power Transistor • N-Channel • Enhancement mode • Avalanche rated f c * '' VPT09Q50 VPT09051 • dv/df rated • 175°C operating temperature Type SPD30N03 Yds 30 V b 30 A ^bS on 0.015 Q. @ VGS VQS = 10V


    OCR Scan     		PDF SPD30N03 SPU30N03 VPT09Q50 VPT09051 P-T0252 Q67040-S4144-A2 P-T0251-3-1 Q67040-S4146-A2 smd diode code pj 70 uras 10 pj 68 SMD diode smd diode code pj 50

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BUZ 384 SIPMOS Power Transistor • N channel • Enhancement mode • FR ED FET Type Vos BUZ 384 500 V 4> 10.5 A *bs on 0.6 w Package Ordering Code TO-218AA C67078-A3209-A2 Maximum Ratings Parameter Symbol Drain source voltage Vos Drain-gate voltage


    OCR Scan     		PDF O-218AA C67078-A3209-A2 O-218AA

    BUZ 835

    Abstract: No abstract text available
    Text: SIEMENS BUZ 307 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated BUZ 307 CO Type 800 V b 3A ^bs on 3 Í1 Package Ordering Code TO-218AA C67078-S3100-A2 Maximum Ratings Parameter Symbol Continuous drain current Values b 7C = 35 °C


    OCR Scan     		PDF O-218AA C67078-S3100-A2 O-218AA BUZ 835

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BUZ 347 Not for new design SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type Vbs BUZ 347 50 V h 45 A ^bs on Package Ordering Code 0.03 n TO-218AA C67078-S31 15-A2 Maximum Ratings Parameter Symbol Continuous drain current


    OCR Scan     		PDF O-218AA C67078-S31 15-A2 fl23SbOS

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BUZ 332 N ot fo r new design SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 332 V'ds 600 V h 8.5 A ^bs on 0.8 a Package Ordering Code TO-218AA C67078-S3123-A2 Maximum Ratings Parameter Symbol Continuous drain current


    OCR Scan     		PDF O-218AA C67078-S3123-A2

    " transistor" fgs 3

    Abstract: Fly DS 100
    Text: SIEMENS BUZ 91 Not for new design SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 91 b 8.5 A W>s 600 V ^bs on 0.8 n Package Ordering Code TO-220 AB C67078-S1342-A2 Maximum Ratings Parameter Symbol Continuous drain current


    OCR Scan     		PDF O-220 C67078-S1342-A2 " transistor" fgs 3 Fly DS 100

    GD 743 Siemens

    Abstract: No abstract text available
    Text: SIEMENS BUZ 103 AL SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level • dv/df rated • Low on-resistance • 175 °C operating temperature • also In TQ-220 SMD available Type BUZ103AL ^bs 50 V b 35 A ^DS on


    OCR Scan     		PDF TQ-220 BUZ103AL C67078-S1357-A2 A23SbOS Z103AL O-220 T05155 235b05 D0fl45flfl GD 743 Siemens

    transistor buz 104

    Abstract: No abstract text available
    Text: SIEMENS BUZ 104 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated k • dv/df rated • Low on-resistance • 175°C operating temperature • also in TO-220 SMD available Type BUZ 104 Vbs 50V b 17.5 A ^bS on 0.1 Û Package


    OCR Scan     		PDF O-220 C67078-S1353-A2 transistor buz 104

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BUZ 50 B SIPMOS Power Transistor • N channel • Enhancement mode Type BUZ 50 B Vbs 1000 V b 2A ^BS on 8ß Package Ordering Code TO-220 AB C67078-A1307-A4 Maximum Ratings Parameter Symbol Drain source voltage ^DS Drain-gate voltage '' dgr Rq s = 20 ki2


    OCR Scan     		PDF O-220 C67078-A1307-A4

    motorola 371-03

    Abstract: mrf754
    Text: MOTOROLA SC XSTRS/R F 4bE D b3b?2S4 OOTMf l bS MOTOROLA 3 HriOTb T - 3 Z > '0 5 SEM IC O N D U C T O R TECHNICAL DATA MRF754 T h e R F L in e 8.0 W - 470 M Hz - 7 .5 V HIG H FREQ UENCY T R A N S IS TO R NPN SILICON HIGH FREQUENCY TRANSISTOR N P N S IL IC O N


    OCR Scan     		PDF MRF754 motorola 371-03 mrf754

    6822 TRANSISTOR equivalent

    Abstract: transistor T009 transistor W1A 93 TRANSISTOR NPN 6822 TRANSISTOR 434 transistor w1a 84 w1a 02 transistor transistors 6822 CECC50000 cecc00200
    Text: BRITISH STAND ARD S INSTITUTION 2, PARK STREET. LONDON, W1A 2BS BS CECC 50 004-042 Specification available from:— AS SH O W N IN PD 9 0 0 2 , and CECC 0 0 2 0 0 S EM E L A B MANUFACTURING LTD. COVENTRY ROAD. LU T T E R W O R T H , L E I C E S T E R S H I R E .


    OCR Scan     		PDF 2N3055 6822 TRANSISTOR equivalent transistor T009 transistor W1A 93 TRANSISTOR NPN 6822 TRANSISTOR 434 transistor w1a 84 w1a 02 transistor transistors 6822 CECC50000 cecc00200