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    Infineon Technologies AG SPU30N03S2L-10

    MOSFET N-CH 30V 30A TO251-3
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    DigiKey SPU30N03S2L-10 Tube 1,500
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    SPU30N03 Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SPU30N03 Infineon Technologies SIPMOS Power Transistor Original PDF
    SPU30N03 Siemens Original PDF
    SPU30N03 Siemens Original PDF
    SPU30N03 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    SPU30N03L Infineon Technologies SIPMOS Power Transistor Original PDF
    SPU30N03L Infineon Technologies Original PDF
    SPU30N03L Siemens Original PDF
    SPU30N03L Toshiba Power MOSFETs Cross Reference Guide Original PDF
    SPU30N03S2-08 Infineon Technologies OptiMOS Power-Transistor Original PDF
    SPU30N03S2L-10 Infineon Technologies OptiMOS Power-Transistor Original PDF

    SPU30N03 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2n0308

    Abstract: C1904
    Text: SPU30N03S2-08 Preliminary data OptiMOS Power-Transistor Product Summary Feature  N-Channel  Enhancement mode 175°C operating temperature  dv/dt rated VDS 30 RDS on 8.2 m ID 30 A V P-TO251 Type Package Ordering Code Marking SPU30N03S2-08 P-TO251 Q67042-S4140


    Original     		PDF SPU30N03S2-08 P-TO251 Q67042-S4140 2N0308 BSPU30N03S2-08, SPU30N03S2-08 2n0308 C1904

    2N03L10

    Abstract: 2N03L
    Text: SPU30N03S2L-10 Preliminary data OptiMOSâ Power-Transistor Product Summary Feature  N-Channel  Logic Level  Low on-resistance RDS on  Excellent Gate Charge x RDS(on) product (FOM) VDS 30 V RDS(on) 10 m ID 30 A P- TO251 -3-1 Superior thermal resistance


    Original     		PDF SPU30N03S2L-10 SPU30N03S2L-10 Q67042-S4042 2N03L10 BSPU30N03S2L-10, 2N03L10 2N03L

    2N0308

    Abstract: No abstract text available
    Text: SPU30N03S2-08 OptiMOS Power-Transistor Product Summary Feature VDS 30 V •Enhancement mode RDS on 8.2 mΩ •Low On-Resistance RDS(on) ID 30 A •N-Channel •Excellent Gate Charge x R DS(on) product (FOM) P- TO251 -3-1 •Superior thermal resistance


    Original     		PDF SPU30N03S2-08 SPU30N03S2-08 Q67042-S4140 2N0308 BSPU30N03S2-08, 2N0308

    SPD30N03

    Abstract: P-TO251-3-1 P-TO252 SPU30N03 Q67040-S4146-A2
    Text: SPD30N03 SPU30N03 Preliminary data SIPMOS Power Transistor • N-Channel • Enhancement mode • Avalanche rated • dv/dt rated • 175°C operating temperature Type VDS ID RDS on SPD30N03 30 V 30 A 0.015 Ω Pin 1 Pin 2 Pin 3 G D S Package @ VGS VGS = 10 V P-TO252


    Original     		PDF SPD30N03 SPU30N03 P-TO252 Q67040-S4144-A2 P-TO251-3-1 Q67040-S4146-A2 SPD30N03 P-TO252 SPU30N03 Q67040-S4146-A2

    2N03L

    Abstract: 2N03L10 SPU30N03S2L-10
    Text: SPU30N03S2L-10 Preliminary data OptiMOS Power-Transistor Product Summary Feature  N-Channel  Logic Level  Low on-resistance RDS on  Excellent Gate Charge x RDS(on) product (FOM) VDS 30 V RDS(on) 10 m ID 30 A P-TO251 Superior thermal resistance 175°C operating temperature


    Original     		PDF SPU30N03S2L-10 P-TO251 Q67042-S4042 2N03L10 BSPU30N03S2L-10, SPU30N03S2L-10 2N03L 2N03L10

    2n0308

    Abstract: Q67042-S4140 S4140 ANPS071E SPU30N03S2-08 g1630
    Text: SPU30N03S2-08 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS 30 V • Enhancement mode R DS on 8.2 mΩ ID 30 A • Low On-Resistance RDS(on) • Excellent Gate Charge x RDS(on) product (FOM) P- TO251 -3-1 • Superior thermal resistance


    Original     		PDF SPU30N03S2-08 Q67042-S4140 2N0308 BSPU30N03S2-08, SPU30N03S2-08 2n0308 Q67042-S4140 S4140 ANPS071E g1630

    2N03L10

    Abstract: SPU30N03S2L-10
    Text: SPU30N03S2L-10 OptiMOS Power-Transistor Product Summary Feature  N-Channel  Logic Level  Low on-resistance RDS on  Excellent Gate Charge x RDS(on) product (FOM) VDS 30 V RDS(on) 10 m ID 30 A P-TO251 Superior thermal resistance 175°C operating temperature


    Original     		PDF SPU30N03S2L-10 P-TO251 Q67042-S4042 2N03L10 BSPU30N03S2L-10, SPU30N03S2L-10 2N03L10

    SPU30N03L

    Abstract: No abstract text available
    Text: SPD30N03L SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage VDS • Enhancement mode Drain-Source on-state resistance RDS on 0.012 Ω • Avalanche rated Continuous drain current ID 30 V 30 A • Logic Level • dv/dt rated


    Original     		PDF SPD30N03L P-TO252 Q67040-S4148-A2 SPU30N03L P-TO251-3-1 Q67040-S4149-A2 SPU30N03L

    IRF1830G

    Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
    Text: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23


    Original     		PDF AO4405 AO4407 AO4408 AO4409 AO4410 AO4411 AO4413 AO4415 AO4422 AO4700 IRF1830G IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696

    30n03l

    Abstract: SPD30N03L 30N03 smd transistor 54 JI SPD 30N03L P-TO251-3-1 P-TO252 SPU30N03L
    Text: SPD 30N03L SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage VDS • Drain-Source on-state resistance RDS on 0.012 Ω Continuous drain current ID Enhancement mode • Avalanche rated 30 V 30 A • Logic Level • dv/dt rated


    Original     		PDF 30N03L SPD30N03L P-TO252 Q67040-S4148-A2 SPU30N03L P-TO251-3-1 Q67040-S4149-A2 30n03l SPD30N03L 30N03 smd transistor 54 JI SPD 30N03L P-TO252 SPU30N03L

    YTA630

    Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
    Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509


    Original     		PDF 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620

    P-TO251-3-1

    Abstract: P-TO252 SPD30N03 SPU30N03 spd30n03a
    Text: SPD30N03 SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage VDS • Drain-Source on-state resistance RDS on 0.015 Ω Continuous drain current ID Enhancement mode • Avalanche rated 30 V 30 A • dv/dt rated • 175°C operating temperature


    Original     		PDF SPD30N03 P-TO252 Q67040-S4144-A2 SPU30N03 P-TO251-3-1 Q67040-S4146-A2 P-TO252 SPD30N03 SPU30N03 spd30n03a

    BUZ MOSFET

    Abstract: mosfet BUZ 326 BUP 312 BSS 130 BUP 304 bup 313 615n60 BUZ 840 SGU06N60 BUP 307D
    Text: s Power Semiconductors MOS Transistors IGBTs Duo-Packs FREDs tp :/ se /ww m w ic .s on ie du me ct ns or .d / e/ ht Product Information 04. 98 Fast IGBTs S-FET SO-8 D-PAK I-PAK MOS-Transistors in alphanumeric order VDS [V] R DSon [⏲] VGS th [V] I D [A] Package


    Original     		PDF 615NV OT-223 20iemens B152-H6493-G5-X-7600 BUZ MOSFET mosfet BUZ 326 BUP 312 BSS 130 BUP 304 bup 313 615n60 BUZ 840 SGU06N60 BUP 307D

    30n03

    Abstract: spd30n03a
    Text: SPD 30N03 SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage VDS • Drain-Source on-state resistance RDS on 0.015 Ω Continuous drain current ID Enhancement mode • Avalanche rated 30 V 30 A • dv/dt rated • 175˚C operating temperature


    Original     		PDF 30N03 SPD30N03 P-TO252 Q67040-S4144-A2 SPU30N03 P-TO251-3-1 Q67040-S4146-A2 30n03 spd30n03a

    transistor SMD QQ

    Abstract: No abstract text available
    Text: SPD30N03L SPU30N03L SIEMENS SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche rated • Logic Level • dvld t rated • 175°C operating temperature Type ^DS 30 V SPD30N03L b 30 A SPU30N03L f f DS on (5) VGS Pin 1 Pin 2 Pin 3 G D


    OCR Scan     		PDF SPD30N03L SPU30N03L P-T0252 Q67040-S4148-A2 P-T0251 Q67040-S4149-A2 transistor SMD QQ

    smd diode code pj 70

    Abstract: uras 10 pj 68 SMD diode smd diode code pj 50
    Text: SIEMENS SPD30N03 SPU30N03 Preliminary data SIPMOS Power Transistor • N-Channel • Enhancement mode • Avalanche rated f c * '' VPT09Q50 VPT09051 • dv/df rated • 175°C operating temperature Type SPD30N03 Yds 30 V b 30 A ^bS on 0.015 Q. @ VGS VQS = 10V


    OCR Scan     		PDF SPD30N03 SPU30N03 VPT09Q50 VPT09051 P-T0252 Q67040-S4144-A2 P-T0251-3-1 Q67040-S4146-A2 smd diode code pj 70 uras 10 pj 68 SMD diode smd diode code pj 50

    BUZ MOSFET

    Abstract: mosfet BUZ 326 BUZ MOSFET 334 spd14n05 mosfet BUZ 349 mosfet buz 90a BUZ 100 MOSFET bup202 BUZ MOSFET 102s BUZ MOSFET 111S
    Text: SIEMENS Power Semiconductors MOS Transistors IGBTs Duo-Packs FREDs U ♦ BS 107 200 26.00 0.8. 2.0 0.13 TO-92 BSS 192 -240 20.00 -2.0. .-0.8 BS 170 60 5.00 0.8. 2.0 0.30 TO-92 BSS 229 250 100.00 -1.8. .-0.7 0.07 TO-92 BSO 307N 30 0.075 1.2. 2.0 4.2 SO-8


    OCR Scan     		PDF 615NV BSP318S BUZ MOSFET mosfet BUZ 326 BUZ MOSFET 334 spd14n05 mosfet BUZ 349 mosfet buz 90a BUZ 100 MOSFET bup202 BUZ MOSFET 102s BUZ MOSFET 111S

    smd diode T42

    Abstract: No abstract text available
    Text: SPD 30N03L Infineon technologies SIPMOS Power Transistor Product Summary Features • N channel • Enhancement mode V ^DS Drain-Source on-state resistance WDS on 0.012 f i 30 A b Continuous drain current • Avalanche rated 30 Drain source voltage • Logic Level


    OCR Scan     		PDF 30N03L P-T0252 Q67040-S4148-A2 Q67040-S4149-A2 SPU30N03L SPD30N03L S35bG5 SQT-89 B535bQ5 D13377Ã smd diode T42