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    TRANSISTOR BR 8050 Search Results

    TRANSISTOR BR 8050 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR BR 8050 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: TO-92 Plastic-Encapsulate Transistors 8050S TRANSISTOR NPN TO-92 FEATURES Power dissipation PCM: 1. EMITTER 0.625 W (Tamb=25℃) 2. COLLECTOR Collector current 0.5 A ICM: Collector-base voltage 40 V V(BR)CBO: Operating and storage junction temperature range


    Original     		PDF 8050S 500mA 500mA, 30MHz

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 8050S TRANSISTOR NPN TO-92 FEATURES Power dissipation PCM: 1. EMITTER 0.625 W (Tamb=25℃) 2. COLLECTOR Collector current 0.5 A ICM: Collector-base voltage 40 V V(BR)CBO:


    Original     		PDF 8050S 500mA 500mA, 30MHz

    8050SS

    Abstract: datasheet of ic 555 IC 555 8050SS Datasheet datasheet ic 555 transistor 8050ss
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 8050SS ） TRANSISTOR（ NPN TO—92 FEATURES Power dissipation PCM : 1 W （Tamb=25℃） 1.EMITTER Collector current 2. COLLECTOR ICM: 1.5 A Collector-base voltage V BR CBO : 40


    Original     		PDF 8050SS O--92 270TYP 050TYP 8050SS datasheet of ic 555 IC 555 8050SS Datasheet datasheet ic 555 transistor 8050ss

    8050S Transistor

    Abstract: 8050s NPN transistor 500ma TO-92
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 8050S TRANSISTOR（ NPN ） TO—92 FEATURES Power dissipation PCM : 0.625 W（Tamb=25℃） Collector current ICM : 0.5 A Collector-base voltage V BR CBO : 40 V Operating and storage junction temperature range


    Original     		PDF 8050S O--92 500mA, 30MHz 8050S Transistor 8050s NPN transistor 500ma TO-92

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 8050S TRANSISTOR（ NPN ） TO—92 FEATURES Power dissipation PCM : 0.625 W（Tamb=25℃） Collector current ICM : 0.5 A Collector-base voltage V BR CBO : 40 V Operating and storage junction temperature range


    Original     		PDF 8050S 30MHz 270TYP 050TYP

    8050SS

    Abstract: transistor 8050ss 8050SS Datasheet 8050ss TRANSISTOR equivalent 8050S 8050ss TRANSISTOR
    Text: 8050SS 8050SS TRANSISTOR NPN TO-92 FEATURES Power dissipation PCM: 1 1. EMITTER W (Tamb=25 ) Collector current ICM: 2. COLLECTOR 1.5 A 3. BASE Collector-base voltage V(BR)CBO: 40 V 1 2 3 Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃


    Original     		PDF 8050SS 800mA, 8050SS transistor 8050ss 8050SS Datasheet 8050ss TRANSISTOR equivalent 8050S 8050ss TRANSISTOR

    SS8050LT

    Abstract: 8050LT1
    Text: DONGGUAN FORWARD SEMICONDUCTOR CO.,LTD SOT-23 Plastic-Encapsulate Transistors SS8050LT1 TRANSISTOR NPN FEATURES Power dissipation PCM: W(Tamb=25℃) 0.3 Collector current ICM: 1.5 A 40 V Collector-base voltage V(BR)CBO: Operating and storage junction temperature range


    Original     		PDF OT-23 SS8050LT1 100mA 800mA 30MHZ 8050LT1 SS8050LT

    8050S Transistor

    Abstract: 8050s ic 8050s 8050s equivalent 8050s* Transistor
    Text: 8050S 8050S TRANSISTOR NPN TO-92 FEATURES Power dissipation PCM: 1. EMITTER 0.625 W (Tamb=25℃) 2. COLLECTOR Collector current ICM: 0.5 A Collector-base voltage 40 V V(BR)CBO: Operating and storage junction temperature range 3. BASE 1 2 3 TJ, Tstg: -55℃ to +150℃


    Original     		PDF 8050S 500mA 500mA, 30MHz 8050S Transistor 8050s ic 8050s 8050s equivalent 8050s* Transistor

    NPN transistor 8050d

    Abstract: transistor br 8050d 8050c transistor transistor br 8050 NPN transistor 8050C BR 8050 BR 8050 D
    Text: 8050 1.5A NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups, C and D, according to its DC current gain. As


    Original     		PDF 100mA 800mA 800mA, NPN transistor 8050d transistor br 8050d 8050c transistor transistor br 8050 NPN transistor 8050C BR 8050 BR 8050 D

    NPN transistor 8050d

    Abstract: BR 8050 D 8050c transistor transistor br 8050 8050 TRANSISTOR PNP 8050c BR 8050 transistor 8050d st 8050d BR 8050D
    Text: ST 8050 1.5A NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups, C and D, according to its DC current gain. As


    Original     		PDF 100mA 800mA 800mA, NPN transistor 8050d BR 8050 D 8050c transistor transistor br 8050 8050 TRANSISTOR PNP 8050c BR 8050 transistor 8050d st 8050d BR 8050D

    NPN transistor 8050d

    Abstract: 8050c transistor BR 8050 D 8050 pnp transistor st 8050d transistor 8050d BR 8550 BR 8050 8050C 8050D
    Text: ST 8050 1.5A NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups, C and D, according to its DC current gain. As


    Original     		PDF 100mA 800mA 800mA, NPN transistor 8050d 8050c transistor BR 8050 D 8050 pnp transistor st 8050d transistor 8050d BR 8550 BR 8050 8050C 8050D

    NPN transistor 8050d

    Abstract: BR 8050 D transistor br 8050 8050c transistor BR 8050 8050c 8050 TRANSISTOR PNP st 8050d BR 8050D 8050 pnp transistor
    Text: ST 8050 2A NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups, C and D, according to its DC current gain. As


    Original     		PDF 100mA NPN transistor 8050d BR 8050 D transistor br 8050 8050c transistor BR 8050 8050c 8050 TRANSISTOR PNP st 8050d BR 8050D 8050 pnp transistor

    BR 8050 D

    Abstract: NPN transistor 8050d BR 8050 transistor 8550 st 8050d transistor br 8050 8050 TRANSISTOR PNP 8050c 8050 pnp transistor 8050d
    Text: ST 8050 2A NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups, C and D, according to its DC current gain. As


    Original     		PDF 100mA BR 8050 D NPN transistor 8050d BR 8050 transistor 8550 st 8050d transistor br 8050 8050 TRANSISTOR PNP 8050c 8050 pnp transistor 8050d

    NPN transistor 8050d

    Abstract: BR 8050 D transistor br 8050 st 8050d 8050c 8050 pnp transistor 8050c transistor BR 8050 S 8050 transistor 8050d
    Text: ST 8050 1.5A NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups, C and D, according to its DC current gain. As


    Original     		PDF 100mA 800mA 800mA, NPN transistor 8050d BR 8050 D transistor br 8050 st 8050d 8050c 8050 pnp transistor 8050c transistor BR 8050 S 8050 transistor 8050d

    Untitled

    Abstract: No abstract text available
    Text: 8050S NPN Silicon Elektronische Bauelemente General Purpose Transistor RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-92 3.5 ±0.2 4.55±0.2 4.5±0.2 FEATURES Power dissipation 0.625 W Tamb=25 C 14.3 ±0.2 PCM: Collector current


    Original     		PDF 8050S 01-Jun-2002

    8050SST

    Abstract: 8050SS
    Text: 8050SST 1.5A , 40V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES  General Purpose Switching and Amplification. G H Emitter Collector Base J


    Original     		PDF 8050SST 8050SST-B 8050SST-C 8050SST-D 18-Feb-2011 100mA 800mA 800mA, 30MHz 8050SST 8050SS

    transistor br 8050

    Abstract: BR 8050 D BR 8050 NPN transistor 8050 PNP 8550 BR 8050 c hFE 8050 transistor b 8050 1/STK 8050 ic
    Text: 8050 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into four groups, B, C, D and E, according to its DC current gain. As


    Original     		PDF

    st 8050d

    Abstract: st8050c st 8050C ST8050D transistor b 8050 st 8050 8050B transistor br 8050 transistor 8050d 8050c transistor
    Text: ST 8050 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into four groups, B, C, D and E, according to its DC current gain. As


    Original     		PDF

    st 8050d

    Abstract: st8050c st8050d BR 8050 D st 8050C 8050c transistor 8050 TRANSISTOR PNP BR 8050 st 8050 8050B
    Text: ST 8050 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into four groups, B, C, D and E, according to its DC current gain. As


    Original     		PDF

    st 8050d

    Abstract: NPN transistor 8050d st8050c TRANSISTOR c 8050 transistor br 8050 BR 8050 D BR 8050 transistor b 8050 8050 pnp transistor 8050 TRANSISTOR PNP
    Text: ST 8050 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into four groups, B, C, D and E, according to its DC current gain. As


    Original     		PDF

    st 8050d

    Abstract: 8050 TRANSISTOR PNP BR 8050 BR 8050 D transistor br 8050 st8050c st 8050C 8050 pnp transistor NPN transistor 8050d 8050D
    Text: ST 8050 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into four groups, B, C, D and E, according to its DC current gain. As


    Original     		PDF

    NPN transistor 8050s

    Abstract: 8050S 8550S
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 8050S TO-92 TRANSISTOR NPN FEATURES z Complimentary to 8550S z Collector current: IC=0.5A 1.EMITTER 2.COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol


    Original     		PDF 8050S 8550S 500mA 500mA, 30MHz NPN transistor 8050s 8050S 8550S

    8050S Transistor

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO-92 8050S TRANSISTOR NPN FEATURES 1.EMITTER z Complimentary to 8550S z Collector Current: IC=0.5A 2.COLLECTOR 3.BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


    Original     		PDF 8050S 8550S 500mA 500mA, 30MHz 8050S Transistor

    BR 8050 D

    Abstract: transistor br 8050 BR 8050 8050 TRANSISTOR PNP 8050 pnp transistor NPN transistor 8050d transistor b 8050 TRANSISTOR c 8050 80500 TRANSISTOR 8050 d h
    Text: HN 8050 NPN Silicon Expitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups, C and D, according to its DC current gain. As complementary type


    OCR Scan     		PDF 103mA BR 8050 D transistor br 8050 BR 8050 8050 TRANSISTOR PNP 8050 pnp transistor NPN transistor 8050d transistor b 8050 TRANSISTOR c 8050 80500 TRANSISTOR 8050 d h