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    SS8050LT

    Abstract: 8050LT1
    Text: DONGGUAN FORWARD SEMICONDUCTOR CO.,LTD SOT-23 Plastic-Encapsulate Transistors 8050LT1 TRANSISTOR NPN FEATURES Power dissipation PCM: W(Tamb=25℃) 0.3 Collector current ICM: 1.5 A 40 V Collector-base voltage V(BR)CBO: Operating and storage junction temperature range


    Original     		PDF OT-23 SS8050LT1 100mA 800mA 30MHZ 8050LT1 SS8050LT

    Y1 SOT-23

    Abstract: marking y1 sot-23 8050LT1 marking Y1 sot23 y1 SOT23 Y1 marking transistor sot23 Y1 TRANSISTOR MARKING SOT23 5 8050L SS8050LT1 MARKING E1 SOT23 TRANSISTOR
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors SOT—23 8050LT1 TRANSISTOR（ NPN ） 1. BASE 2. EMITTER 3. COLLECTOR FEATURES １．０ Power dissipation PCM : 0.3 W（Tamb=25℃） Collector current ICM : 1.5 A


    Original     		PDF OT-23 OT--23 SS8050LT1 8050LT1 037TPY 950TPY 550REF 022REF Y1 SOT-23 marking y1 sot-23 marking Y1 sot23 y1 SOT23 Y1 marking transistor sot23 Y1 TRANSISTOR MARKING SOT23 5 8050L SS8050LT1 MARKING E1 SOT23 TRANSISTOR