61089b
Abstract: TH3 thermistor TH5 thermistor TRANSISTOR BO 344 OverCurrent Protector TRANSISTOR BO 346 79R241 GR-1089-CORE JESD51-2 TISP61089B
Text: TISP61089B DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS TISP61089B High Voltage Ringing SLIC Protector Dual Voltage-Programmable Protectors - Supports Battery Voltages Down to -155 V - Low 5 mA max. Gate Triggering Current
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TISP61089B
TISP61089B
61089b
TH3 thermistor
TH5 thermistor
TRANSISTOR BO 344
OverCurrent Protector
TRANSISTOR BO 346
79R241
GR-1089-CORE
JESD51-2
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Untitled
Abstract: No abstract text available
Text: "BIG IDEAS IN BIS POWER |A MR PowerTecn lO O A M P E R E S PT*3520 ULTRA FAST SW ITCHING SILICON NPN TRANSISTOR ABSOLUTE M A X IM U M RATINGS SYM BO L PT-3520 Collector-Base Voltage vceo 300V C ollector-Em itter Voltage VCEO 200V E m itter Base Voltage VEBO
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PT-3520
-100A
20OVr
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Untitled
Abstract: No abstract text available
Text: UNITE» MICROELECTRONICS 30E D T 3 2 5 A 5 E DDOOSSO 1 • ' T ~ ri ri~l 3 U M 3522G Simple Piano Electronic Keyboard 1C Features .■ ■ ■ ■ * 3V to 4.5V operating voltage range Low power consumption Built-in oscillator, no external components needed.
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3522G
20SC2
UM3561H
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ic UM3561
Abstract: Siren Sound Generator keyboard ic K13 transistor UM3561 transistor k7 Siren Sound Generator um3561 UM3522GH UM3522G Siren Sound Generator 4 sound UM3561
Text: UNITED MICROELECTRONICS U M 3522G 30E D T32SÛSH DD005SP 1 • Simple Piano Electronic Keyboard 1C Features .■ ■ ■ ■ * ' T ~ CìrM 3 Pin Configuration 3V to 4.5V operating voltage range Low power consumption Built-in oscillator, no external components needed.
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UM3522G
UM3561
UM3561H
ic UM3561
Siren Sound Generator
keyboard ic
K13 transistor
transistor k7
Siren Sound Generator um3561
UM3522GH
Siren Sound Generator 4 sound UM3561
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TRANSISTOR BO 352
Abstract: BUL510
Text: SGS-THOMSON iiueraoowgi *7/ BUL510 HIGH VOLTAGE NPN MULTIEPITAXIAL FASTSWITCHING TRANSISTOR . HIGH VOLTAGE CAPABILITY . TIGHT CONTROL OF DYNAMIC CHARACTERISTICS . MINIMUM LOT TO LOT SPREAD FOR RELIABLE OPERATION . LOW BASE DRIVE REQUIREMENTS i VERY HIGH SWITCHING SPEED:
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BUL510
BUL510
O-220
CC26290
GC57390
TRANSISTOR BO 352
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ZTX752 equivalent
Abstract: transistor 42-10a data BC369 FXTA92 BSS98
Text: B o ok 1 Through Hole Com ponents Table of Contents Section Introduction 1 Selection Guide 2 Datasheets 3 Package Outline Dimensions 4 Tape and Reel Specifications 5 Surface Mount Alternatives 6 Alphanumeric Index 7 Book 2 Surface Mount Components - Available on Request
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ZVP2106C
ZVP2110A
ZVP2110C
ZVP2120A
ZTX788B
ZVP2120C
ZVP3306A
ZVP3310A
ZVP4105A
2110C
ZTX752 equivalent
transistor 42-10a data
BC369
FXTA92
BSS98
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transistor vergleichsliste
Abstract: OC44 AD149 ASZ16 siemens transistor asy 27 AF124 ASZ15 GD241 transistor gc301 AC125F
Text: TRANSISTOR VERGLEICHSLISTE Teil 1: G erm anium transistoren ra d io -television T ran sistorvergleichsliste T eil 1 : G erm anium transistoren TRANSISTOR V E R G L E I C H S LI S T E T eil 1: G erin an iu u itran sisto ren M IL IT Ä R V E R L A G D E R D E U T S C H E N D E M O K R A T IS C H E N
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k2915
Abstract: No abstract text available
Text: 2SK2915 TO SHIBA TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSV 2S K29 15 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS IN D U S T R IA L A P P L IC A T IO N S CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS • Low Drain-Sorce O N Resistance
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2SK2915
--16A,
k2915
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Untitled
Abstract: No abstract text available
Text: T O SH IB A 2SK2953 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSV 2S K29 53 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS IN D U S T R IA L A P P L IC A T IO N S CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS •
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2SK2953
100/jA
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MMBA811C6
Abstract: MMBA812M5 fr5 transistor MMBA812M6 MMBC1622D6 25CC BSS79B BSS79C BSS82B BSS82C
Text: motorola sc 6367254 -c x s t r s / r f > MOTOROLA S C Tb DE 1 CXSTRS/R F M ax im u m r a t i n g s 96 D 8 1 9 6 9 Value VCEO 40 Vdc Collector-Base Voltage VCBO 75 Vdc Emitter-Base Voltage Ve b O 6.0 Vdc lc 100 mAdc Symbol Max Unit PD 225 mW 1.8 mW/°C Ro ja
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b3b7254
BSS79B
BSS79C
MPS3904
MMBC1622D6
MMBC1622D7
MMBA811C6
MMBA812M5
fr5 transistor
MMBA812M6
25CC
BSS79B
BSS79C
BSS82B
BSS82C
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hall effect transistor 502a
Abstract: SENSOR HALL 504A 506A hall switch 506a hall ITT Semiconductors HAL506 SENSOR HALL 508a hall 502a package marking 504c HAL503
Text: HAL501 .HAL506 HAL508 Hall Effect Sensor IC Specifications in CMOS technology The types differ according to the magnetic flux density values for the magnetic switching points, the tempera ture behavior of the magnetic switching points, and the mode of switching.
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HAL501
HAL506
HAL508
hall effect transistor 502a
SENSOR HALL 504A
506A hall switch
506a hall
ITT Semiconductors
SENSOR HALL 508a
hall 502a
package marking 504c
HAL503
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Untitled
Abstract: No abstract text available
Text: h ~7 > y $ /T ransistors 9Q D 9 1I 1I O w l # Ä » 2SD2118F5 W Epitaxial Planar NPN Silicon Transistor 1 ¿ J § 5 M 2 ji£ lIÍf f l/L o w Freq. Power Amp. 7s h P / f 7 7 7 V j-ffl/S tro b o Flash. b • y l-îe 'T 'ifiü / Dimensions Unit : mm 1 ) VcE(sat)
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2SD2118F5
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PNPN
Abstract: TRansistor A 940 OCS31
Text: OKI electronic com ponents OCS31 Optical PNPN Switches GENERAL DESCRIPTION The OCS31 is an optical switch formed by combining a GaAs infrared light emitting diode and a silicon PNPN element that can withstand high voltages. Encased in an 8-pin plastic package, the
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OCS31_
OCS31
E86831
b7E4240
OCS31
PNPN
TRansistor A 940
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BUK202-S0Y
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PowerMOS transistor BUK202-S0Y TOPFET high side switch_ DESCRIPTION Monolithic temperature and overload protected power switch based on MOSFET technology in a 5 pin plastic envelope, configured
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BUK202-S0Y
BUK202-50Y
BUK202-5QY
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Untitled
Abstract: No abstract text available
Text: KSR1108 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In • Switching Circuit, Inverter, Interface circuit Orivdr circuit • Built in bias Resistor (R,=47KQ, R;=22KO) • Complement to KSR2108 ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
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KSR1108
KSR2108
10OjiA
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Untitled
Abstract: No abstract text available
Text: Ordering number: EN3526 FBET Hybrid tC VPA10 No. 3 5 2 8 i Video Pack, Video Output Amplifier SAW O r for High-resolution CRT Displays i "V OVERVIEW PINOUT The VPA10 is ideally suited to medium-resolution mon itors which use a 64 kHz line frequency. Applications
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EN3526
VPA10
VFA10
VPA10
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Untitled
Abstract: No abstract text available
Text: _ l l N AMER PHILIPS/DISCRETE bbS3T31 QQ1S2D7 1 ObE D RXB12350Y IM J PULSED MICROWAVE POWER TRANSISTOR N-P-N silicon power transistor fo r use in a common-base, class-C narrowband amplifier in avionics applications. It operates in pulsed conditions only and is recommended fo r IFF applications.
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bbS3T31
RXB12350Y
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Untitled
Abstract: No abstract text available
Text: N AflER PHILIPS/DISCRETE b 'lE » bbSB'lBl DD3DS35 bU3 «APX Product Specification Philips Semiconductors BUK444-500B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a lastic full-pack envelope, he device is intended for use in
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DD3DS35
BUK444-500B
bb53331
bbS3131
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Untitled
Abstract: No abstract text available
Text: T O SH IB A 2SK2915 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M O SV 2SK2915 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS IN D U S T R IA L A P P L IC A T IO N S U n it in mm CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS
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2SK2915
100/jA
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Untitled
Abstract: No abstract text available
Text: Product Specification Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode iield-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,
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BUK455-400B
T0220AB
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2SC793
Abstract: 2SC633A 2SA653 2SC1060 C633A 138B 2SC1061 2SC1213 2SC519 2SC520
Text: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English
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2SC633A
2SC634A
2SC1079
2SC1080
2SC1382
2SC793
2SC633A
2SA653
2SC1060
C633A
138B
2SC1061
2SC1213
2SC519
2SC520
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VPA05
Abstract: No abstract text available
Text: I Ordering number: EN3S26 FBET Hybrid 1C VPM04 Video Pack, Three-channel, RGB Video Output Amplifier for Medium-resolution CRT Displays No. 3526 SA%YO F i / / / .f •j OVERVIEW 4 X . ,.:s ' :v ".vt-Äs. It "X > ' PINOUT The VPM04 is a composite, three-channel, video output
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EN3S26
VPM04
VPA05
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POWER SUPPLY BTS SIEMENS
Abstract: 7J40 BTS432D2 E3043 GPT051B5 Q67060-S6201-A2 siemens 3t
Text: DH flEBSbüS 00fll4fl3 S41 S IE M E N S PROFET B T S 4 3 2 D 2 Smart Highside Power Switch P ro d u ct S um m ary F eatures • Load dump and reverse battery protection1 80 Vi.oad dump • Clamp of negative voltage at output Vbb- VtouT Avalanche Clamp 58
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BTS432D2
A235L
O-220AB/5
Q67060-S6201-A2
GPT051B5
O-22QAB/5,
E3043
E3043
Q67060-S6201
POWER SUPPLY BTS SIEMENS
7J40
BTS432D2
GPT051B5
Q67060-S6201-A2
siemens 3t
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LT 0220 diode
Abstract: No abstract text available
Text: TOSHIBA 2SK2953 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M O SV 2S K29 53 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS IN D U S T R IA L A P P L IC A T IO N S CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS • Low Drain-Sorce O N Resistance
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2SK2953
60HARACTERISTICS
--15A,
LT 0220 diode
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